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2024 Applied Optics and Photonics China: Optical Sensing, Imaging technology, and Applications, AOPC 2024

作者： An, Baohua Chen, Chao Zhou, Hongxi Yang, Houshan Liu, Lixin Jiang, Jiamin Wu, Zhiming Gou, Jun Wang, Jun School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (数字)9781510687820

ISBN: (纸本)9781510687813

Lead selenide telluride (PbSeTe) polycrystalline films were prepared by magnetron sputtering technique using ternary target material. The lead selenide telluride films were oxidized and iodized. The film samples were tested by the Rigaku Smartlab (grazing X-ray diffractometer) in Japan. The morphology of PbSeTe films after evaporation was observed by SEM (Geminisem 300). The Raman spectra of Pb Se telluride thin films were measured by a confocal microprobe Raman spectrometer (RENISHAW in Via Raman Microscope) and a He-Ne laser with wavelength of 514.5 nm. The infrared photoelectric characteristics of the detector made of PbSeTe thin film before and after sensitization were tested and analyzed. XRD and EDS results show that the prepared PTE films are homogeneous and compact with small grains, and no particles with clear edge profiles can be observed under scanning electron microscopy. The atomic ratio of Te, Pb and Se tends to be 5:7:7. The photoelectric performance detection results show that the sensitized device has excellent photoelectric performance, the photocurrent and response speed are improved significantly, and the fastest rise time and fall time of 980 nm can reach 38.95 microseconds and 620 microseconds, respectively, and the maximum signal-to-noise ratio is nearly 100 times. Therefore, by adjusting sputtering parameters and post-processing, PbSeTe thin film detectors with good photoelectric properties can be obtained. © 2024 SPIE.

关键词： Magnetron sputtering

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Flexible Bi2Te3 photothermoelectric thin film detector with broadband response at room temperature

Flexible Bi2Te3 photothermoelectric thin film detector with ...

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2024 Applied Optics and Photonics China: Optical Sensing, Imaging technology, and Applications, AOPC 2024

作者： Jiang, Jiamin Lian, Yunlu An, Baohua He, Yu Wang, Jun School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (数字)9781510687820

ISBN: (纸本)9781510687813

Broadband photodetection is paramount for various applications like imaging and sensing, thus garnering significant attention as a research hot spot in recent years. However, it is challenging to detect infrared light at room temperature due to its low photon energy. Here, we demonstrate a Bi2Te3 photothermoelectric thin film photodetector fabricated using cotrollable and large-scale magnetron sputtering technology. The proposed device exhibits a sensitivity exceeding 9.72 mA/W and a specific detectivity of 4.52 × 108 Jones under 10.37 μm infrared light illumination at room temperature. The satisfied photoresponse observed stems from an electron temperature gradient rather than electron-hole separation. Furthermore, the Bi2Te3 photodetector presents high performance with high air-stability, broadband spectrum photodetection from visible to the mid-infrared range. This investigation paves a way for developing high-performance photodetectors leveraging topological insulator materials endowed with remarkable thermoelectric properties. © 2024 SPIE.

关键词： Topological insulators

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Optical reservoir computing based on the bagging trees 4

Optical reservoir computing based on the bagging trees

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4th International Conference on Advanced Manufacturing technology and Electronic Information, AMTEI 2024

作者： Xiao, Mujun Zhang, Ailing Wang, Chao Tianjin Key Laboratory of Thin Film Electronics and Communication Devices Engineering Research Center for Optoelectronic Devices and Communication Technology Ministry of Education School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin300384 China School of Engineering and Digital Arts University of Kent Canterbury United Kingdom

ISBN: (数字)9781510688247

ISBN: (纸本)9781510688230

In traditional optical reservoir computing, the least squares method are commonly used to train the output weights for regression tasks. Although these algorithms are highly versatile, their training efficiency and accuracy are somewhat inferior compared to current algorithms. Bagging trees, an ensemble learning method, works by resampling the dataset to train multiple models and then combining the predictions of these models, thus improving the stability and accuracy of the final prediction. By combining optical reservoir computing with the bagging trees, both the prediction accuracy and training efficiency are greatly improved, with the highest R-squared prediction reaching 99.56%. © 2025 SPIE.

关键词： Prediction models

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Tunable Multi-Frequency Microwave Signal Generation in optoelectronic Oscillator Based on Directly Modulated Laser 14

Tunable Multi-Frequency Microwave Signal Generation in Optoe...

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Semiconductor Lasers and Applications XIV 2024

作者： Meng, Chengzhen Zhang, Yali Li, Juncheng Zeng, Zhen Zhang, Zhiyao Zhang, Shangjian Liu, Yong State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (数字)9781510681958

ISBN: (纸本)9781510681941

In this paper, we propose an optoelectronic oscillator (OEO) based on a directly modulated laser (DML) to generate multi-frequency microwave signals. The proposed OEO features in a DML with no any external modulator in the loop, an electrical mixer to provide the multi-frequency injection signals, and a two-channel electrical filter bank to choose the desired oscillation modes. The generated multi-frequency microwave signals have excellent performance in the side mode suppression ratio (SMSR), phase noise, tunability and coherence. In the proof-of-concept experiment, triple-frequency microwave signals are demonstrated with the frequency tunability of 8 - 12 GHz, and the SMSR and phase noise can be up to 53 dB and -120 dBc/Hz @ 10 kHz, respectively. Moreover, quintuple- and septuple-frequency microwave signals are also successfully generated. © 2024 SPIE.

关键词： Phase noise

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High-performance GaSb planar PN junction detector

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Journal of Semiconductors 2024年第9期45卷 48-52页

作者： Yuanzhi Cui Hongyue Hao Shihao Zhang Shuo Wang Jing Zhang Yifan Shan Ruoyu Xie Xiaoyu Wang Chuang Wang Mengchen Liu Dongwei Jiang Yingqiang Xu Guowei Wang Donghai Wu Zhichuan Niu Derang Cao College of Physics National Demonstration Center for Experimental Applied Physics EducationQingdao UniversityQingdao 266071China Key Laboratory of Optoelectronic Materials and Devices Chinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China

This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.

关键词： antimonide short-wave infrared planar junction zinc diffusion

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Ultrabroadband Platinum Ditelluride Photodetector from Visible to Terahertz

Ultrabroadband Platinum Ditelluride Photodetector from Visib...

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2024 Applied Optics and Photonics China: Optical Sensing, Imaging technology, and Applications, AOPC 2024

作者： Lian, Yunlu Jiang, Jiamin Gou, Jun Yu, He Wang, Jun School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (数字)9781510687820

ISBN: (纸本)9781510687813

Photodetectors capable of detecting visible, infrared, and terahertz radiation are essential components in various optoelectronic applications. Traditional semiconductor-based photodetectors are often limited in their spectral detection range by their restricted bandgap. While photodetectors utilizing black phosphorus and graphene can achieve broad-spectrum detection, these are subject to the poor environmental stability of black phosphorus and the limited light absorption capacity of graphene. Platinum ditelluride (PtTe2), classified as a type II Dirac semimetal, exhibits exceptional properties including strong light absorption, high carrier mobility at room temperature, and a zero bandgap, making it a promising candidate for photodetection applications in the infrared and terahertz regions. In this study, large-area uniform PtTe2 thin films were epitaxially grown using a simple tellurium-vapor transformation approach. By harnessing the wideband absorption capabilities and superior carrier mobility of PtTe2, a PtTe2/Si vertical heterojunction photodetector and a dual-bow-tie-type antenna enhanced THz detector were proposed, enabling the fabrication of ultrabroadband photodetectors from visible to terahertz. Through optimization of the device barrier height of the PtTe2/Si vertical heterojunction devices, carrier interfacial diffusion in the dark was suppressed, the recombination probability of photogenerated carriers was reduced, while the rapid collection of photogenerated carriers was facilitated, resulting in a wideband response spanning from 405 to 5000 nm. To enhance the absorption rate of PtTe2 in the THz band, a dual-bow-tie-type antenna electrode was utilized to improve the photoresponse of the device in this frequency range, leveraging the driving capability of Dirac fermions simultaneously to achieve photoresponse in the 0.1 THz band. With a carefully designed device structures, the photodetector demonstrated a high specific detectivity (6.78×108 @1310 nm

关键词： Heterojunctions

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Obstructed atomic insulators with robust corner modes

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Physical Review B 2023年第10期108卷 L100101-L100101页

作者： Da-Shuai Ma Kejun Yu Xiao-Ping Li Xiaoyuan Zhou Rui Wang Institute for Structure and Function & Department of Physics & Chongqing Key Laboratory for Strongly Coupled Physics Chongqing University Chongqing 400044 People's Republic of China Center of Quantum materials and devices Chongqing University Chongqing 400044 People's Republic of China Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology Beijing 100081 China School of Physical Science and Technology Inner Mongolia University Hohhot 010021 China

Higher-order topological insulators (HOTIs), that are classified as obstructed atomic insulators (OAIs) in the topological quantum chemistry (TQC) theory, attract great interest owning to the lower-dimensional topological boundary states. However, the boundary states in HOTIs reported so far are often fragile, manifested as strongly depending on crystalline symmetries and cleavage terminations in the disk or cylinder geometry. Here, using the TQC theory, we propose an intuitive strategy to establish the connection between the obstructed Wannier charge centers of OAIs and the emergence of robust corner states in two-dimensional systems. Based on first-principles calculations and real space invariant theory, we extend the concept of OAIs to phonon systems and thereby predict that the robust corner states can be realized in the phonon spectra of MX3 (M = Bi, Sb, As, Sc, Y; X = I, Br, Cl) monolayers. The phonon corner modes in different shapes of nanodisks are investigated, and their robustness facilitates the detection in experiments and further applications. This work suggests a promising avenue to explore more attractive features of higher-order band topology beyond the existing paradigm.

关键词： Edge states First-principles calculations Phonons Topological materials Topological phases of matter 2-dimensional systems Topological insulators High-throughput calculations Wannier function methods

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Vertical conductivity and atomic-level reconstruction in small-angle twisted MoS2 homostructures 6

Vertical conductivity and atomic-level reconstruction in sma...

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6th International Conference on optoelectronic Science and Materials, ICOSM 2024

作者： Pan, Er Li, Zefen Liu, Qing Liu, Fucai School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu611731 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu611731 China

ISBN: (数字)9781510686823

ISBN: (纸本)9781510686816

Twisted interface structure of two-dimensional materials offers nearly limitless platforms for the design of novel metamaterials. The natures of these twisted systems depend strongly on the twisted angle between adjacent layers. Due to the intriguing optical and electronic properties observed in twisted graphene and transition metal dichalcogenides, this field has attracted increased attention. Here, we employ conductive atomic force microscopy (CAFM) to investigate the vertical conductivity of small twisted bilayer MoS2 (ST-MoS2). We find that different atomic configurations exhibit distinct vertical conductivities, and it exhibits uniform conductivity within the domains, providing insights into the design and optimization of its optical and electronic natures. © 2024 SPIE.

关键词： Molybdenum compounds

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Study on the microstructure and optical properties of PbTe films prepared by magnetron sputtering

Study on the microstructure and optical properties of PbTe f...

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2024 Applied Optics and Photonics China: Optical Sensing, Imaging technology, and Applications, AOPC 2024

作者： Liu, Lixin Gou, Jun An, Baohua Jiang, Jiamin Wang, Jun School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (数字)9781510687820

ISBN: (纸本)9781510687813

We present a Si-based Photodetector with a broadband and fast response based on Lead telluride (PbTe) polycrystalline films prepared by magnetron sputtering technique. The prepared PbTe films are polycrystalline and the dominant surface is (111) plane. The best films have triangular morphology. The atomic ratio of Pb/Te tends to 1:1. The photoelectric property detection results show that the films deposited at 130 W for 10 minutes at room temperature have excellent properties. The fastest rise time and fall time of near infrared band can reach 900 microseconds and 700 microseconds respectively, and the longest detection band can reach 4.1 microns. © 2024 SPIE.

关键词： Magnetron sputtering

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Development of in situ characterization techniques in molecular beam epitaxy

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Journal of Semiconductors 2024年第3期45卷 9-32页

作者： Chao Shen Wenkang Zhan Manyang Li Zhenyu Sun Jian Tang Zhaofeng Wu Chi Xu Bo Xu Chao Zhao Zhanguo Wang Laboratory of Solid State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101804China School of Physics Science and Technology Xinjiang UniversityUrumqi 830046China School of New Energy and Electronics Yancheng Teachers UniversityYancheng 224002China Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE *** recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization *** techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled *** combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive *** review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science *** addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

关键词： epitaxial growth thin film in situ characterization molecular beam epitaxy(MBE)

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