The characteristic of charge carrier recombination zone in N, N'-bis-(1-naphthyl)-N, N'-biphenyl-1, 1'-biphenyl-4, 4'-diamine (NPB) based OLEDs is studied using an ultrathin 5, 6, 11, 12-tetraphenylnap...
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We propose a novel CMOS readout structure without sample and hold (SH) circuit for uncooled microbolometers. In this readout circuit, all the pixels in one row can be integrated simultaneously, and the readout integra...
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With their excellent mechanical, thermal, and optical properties, silicon nitride (SiNx) films are widely used as both supporting and insulating materials for MEMS structures. Practical applications of SiNx films rely...
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ISBN:
(纸本)9780819475428
With their excellent mechanical, thermal, and optical properties, silicon nitride (SiNx) films are widely used as both supporting and insulating materials for MEMS structures. Practical applications of SiNx films rely on their film quality, which will affect the performance and stability of the related devices. In general, SiNx films are deposited by low pressure chemical vapor deposition (LPCVD) or high-frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). However, up to now, less reports about the deposition of SiNx films by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) have been made. This paper reports the preparation of SiNx thin films by PECVD with a low frequency (380 kHz). The process parameters were carefully optimized for the growth of SiNx films. And the thicknesses and refractive indices of SiNx films were characterized by spectroscopic ellipsometry with small mean square error (MSE
A novel sensing film immobilizing monosulfonate tetraphenyl porphyrin (TPPS1)-plant-esterase was prepared for the detection of dimethyl methyl-phosphonate (DMMP). The morphology of the film was analyzed by atomic forc...
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Fronts are elementary structures that separating domains of different steady states in reaction diffusion systems. The local dynamics of front structures have been investigated by a non-gradient reaction diffusion mod...
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The temperature distribution in different cooling system was studied. A thermal distribution model of laser crystal was established. Based on the calculation, the temperature distribution and deformation of ND:YVO4 cr...
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The formation mechanism of stripe patterns in the skin of tropical fishes has been investigated by a coupled two variable reaction diffusion model. Two types of spatial inhomogeneities have been introduced into a homo...
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Organic light-emitting devices（OLEDs） with the structure of indium-tin-oxide（ITO）/N,N＇-bis-（1-naphthyl）-N,N＇-diphenyl-（1,1＇-biphenyl）-4,4＇-diamine（NPB）/2,9-dimenthyl-4,7-diphenyl-1,10-phenanthroline（BCP...
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Organic light-emitting devices（OLEDs） with the structure of indium-tin-oxide（ITO）/N,N＇-bis-（1-naphthyl）-N,N＇-diphenyl-（1,1＇-biphenyl）-4,4＇-diamine（NPB）/2,9-dimenthyl-4,7-diphenyl-1,10-phenanthroline（BCP）/tris（8-hydroxyquinoline）aluminum（Alq3）/Mg：Ag or that of ITO/NPB/1,2,3,4,5,6-hexakis（9,9-diethyl-9H-fluoren-2-yl）benzene（HKEthFLYPh）/Alq3/Mg：Ag were *** light emission was achieved with the two devices when the thicknesses of BCP and HKEthFLYPh were 1.5 nm（device B） and 5 nm（device Ⅱ）,*** obvious difference was that the EL spectrum of device Ⅱ was not sensitive to the thickness of HKEthFLYPh compared to that of BCP ***,the maximum luminance of device Ⅱ was about 1000 cd/m^2 higher than that of device B at a forward bias of 15 V,and it exhibited a maximum power efficiency of 1.0 lm/W at 5.5 V,which is nearly twice that of device *** performance of device Ⅱ using a novel star-shaped hexafluorenylbenzene organic material was improved compared with that of BCP.
Shuffled Frog-Leaping Algorithm(SFLA) is a new meta-heuristic population evolutionary algorithm. Shuffled Frog-Leaping algorithm has fast and excellent global exploration capability. Firstly, the paper introduces the ...
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The properties of plasma in Ar/ N2 microwave electron cyclotron resonance discharge with a percentage of N2 flow rate ranging from 5% to 50% have been studied in order to understand the effect of N2 flow rate on the m...
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