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7th International Conference on Computing and Artificial Intelligence, ICCAI 2021

作者： Geng, Lei Yang, Yulong Xiao, Zhitao Yin, Changshun School of Life Sciences Tianjin Key Laboratory of Optoelectronic Detection Technology and System TianGong University Tianjin300387 China School of Electronics and Information Engineering Tianjin Key Laboratory of Optoelectronic Detection Technology and System Tiangong University Tianjin300387 China

ISBN: (纸本)9781450389501

The accuracy of retrieving the CAD file corresponding to the cut-piece from the CAD library determines the efficiency of the cut-piece automatic detection system and the digital management of the cut-piece inventory. However, the materials of the cut-piece are complex and diverse (including cowhide, artificial leather, fabric, etc.), contain multi-layered shapes and structures, and are prone to deformation. The traditional registration algorithms cannot satisfy the accurate registration between CAD and cut-piece. In order to solve the problem of high-frequency translation and complex shape of the cut-piece, we propose an image retrieval algorithm based on representation learning. This paper takes FaceNet as the basic framework. First, the loss function combining Softmax loss and center loss is used to maintain the discriminant ability between classes and optimize the cohesion of the ternary loss function. Second, the BlurPool module is used to enhance the anti-aliasing of the downsampling process and enhance the translation invariance of the network while maintaining network performance. Finally, the multi-feature deep fusion (FRE) module designed in this paper is used to solve the problem of reduced model expression ability caused by different sizes of cut-piece. A series of experiments on our dataset show that the proposed representation learning network is more accurate in the SVM classifier, and it only takes 30ms to predict a single cut-piece. © 2021 ACM.

关键词： Support vector machines

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Time-resolved studies on odd-even harmonic emission from oriented HeH+ in strong orthogonal two-color laser fields

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Physical Review A 2024年第6期110卷 063509-063509页

作者： J. Y. Che C. Y. Zhang J. N. Wu W. Y. Li Y. J. Chen Hebei Key Laboratory of Optoelectronic Information and Geo-detection Technology School of Mathematics and Science Hebei GEO University Shijiazhuang Hebei 050031 China College of Physics and Information Technology Shaanxi Normal University Xi'an Shaanxi 710119 China

We study high-order harmonic generation (HHG) from oriented asymmetric molecule HeH+ in strong orthogonally polarized two-color (OTC) laser fields numerically and analytically. We focus on the time-resolved dynamics of HHG from the asymmetric system. The time-frequency distribution of the calculated HHG spectrum shows a strong dependence on the molecular orientation. In particular, when the molecular axis is parallel to the fundamental field of OTC which is stronger than the second-harmonic field of OTC in our simulations, the HHG shows a strong emission in one half cycle and is weak in the other half. This phenomenon is somewhat similar to an optical diode and can be attributed to the permanent-dipole effect of HeH+, which is sensitive to the molecular orientation. It suggests a method for controlling the motion of an electron inside an asymmetric molecule and obtaining the desired attosecond pulse train with OTC field. Using a strong-field model, the intrinsic relationship between odd-order and even-order harmonics in OTC field and the structure of the asymmetric molecule is also discussed.

关键词： Atomic & molecular processes in external fields Ultrafast phenomena

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用于室温全固态锂金属电池的精准丁二腈官能团化聚氧化乙烯固态电解质

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Science China Materials 2024年第5期67卷 1412-1421页

作者：李新阳张宗楠封婕阴祥凯崔晓峰徐巍张宏俊曾荣丁书江 School of Chemistry Engineering Research Center of Energy Storage Materials and DevicesMinistry of EducationState Key Laboratory of Electrical Insulation and Power EquipmentXi’an Jiaotong UniversityXi’an710049China School of Future Technology Xi’an Jiaotong UniversityXi’an710049China State Key Laboratory of Particle Detection and Electronics University of Science and Technology of ChinaHefei230026China

聚环氧乙烷(PEO)聚合物电解质有望应用于全固态锂金属电池.然而,目前还没有提出有效的方法制备全固态PEO电解质,以克服其在室温下无法使用的局限性.在本研究中,我们基于聚合物C-H键功能化策略,通过在聚合物链上直接共价连接具有锂配位... 详细信息

聚环氧乙烷(PEO)聚合物电解质有望应用于全固态锂金属电池.然而,目前还没有提出有效的方法制备全固态PEO电解质,以克服其在室温下无法使用的局限性.在本研究中,我们基于聚合物C-H键功能化策略,通过在聚合物链上直接共价连接具有锂配位活性的丁二腈官能团,设计出了一种高离子导电性PEO电解质.该官能团有效增强了PEO链的无序性和流动性,同时也作为链间快速离子传导的活性位点,从而实现了离子周围自由体积和迁移行为的双重优化.得益于官能团对离子输运的精准调节,新型电解质表现出更强的离子传导性(离子电导率提升100倍)、更高的转移数(tLi+=0.51)和更宽的电化学窗口(>0.47 V).特别是功能化的PEO300k电解质具有超高室温离子电导率(25℃时为1.01×10^(-4)S cm^(-1))并且能够在室温下稳定工作,该研究为开发具有实际应用价值的聚合物电解质提供了新的途径.

关键词： all-solid-state lithium battery PEO electrolyte polymer functionalization room temperature operation fast ionic conduction

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Enabling Multi-Chemisorption Sites on Carbon Nanofibers Cathodes by an In-situ Exfoliation Strategy for High-Performance Zn–Ion Hybrid Capacitors

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Nano-Micro Letters 2022年第7期14卷 1-15页

作者： Hongcheng He Jichun Lian Changmiao Chen Qiaotian Xiong Cheng Chao Li Ming Zhang Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and DevicesHunan Joint International Laboratory of Advanced Materials and Technology for Clean EnergySchool of Physics and ElectronicsCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082People’s Republic of China Tsinghua Shenzhen International Graduate School Tsinghua UniversityShenzhen 518055People’s Republic of China School of Chemical Engineering and Light Industry Guangdong University of TechnologyGuangzhou 510006People’s Republic of China

Carbon nanofibers films are typical flexible electrode in the field of energy storage,but their application in Zinc-ion hybrid capacitors(ZIHCs)is limited by the low energy density due to the lack of active adsorption *** this work,an in-situ exfoliation strategy is reported to modulate the chemisorption sites of carbon nanofibers by high pyridine/pyrrole nitrogen doping and carbonyl *** experimental results and theoretical calculations indicate that the highly electronegative pyridine/pyrrole nitrogen dopants can not only greatly reduce the binding energy between carbonyl group and Z n2+by inducing charge delocalization of the carbonyl group,but also promote the adsorption of Zn2+by bonding with the carbonyl group to form N–Zn–O *** from the multiple highly active chemisorption sites generated by the synergy between carbonyl groups and pyridine/pyrrole nitrogen atoms,the resulting carbon nanofibers film cathode displays a high energy density,an ultralong-term lifespan,and excellent capacity reservation under commercial mass loading(14.45 mg cm-2).Particularly,the cathodes can also operate stably in flexible or quasi-solid devices,indicating its application potential in flexible electronic *** work established a universal method to solve the bottleneck problem of insufficient active adsorption sites of carbon-based *** should be changed into Improved.

关键词： Nitrogen doping Carbonyl functionalization Chemisorption sites Flexible Zn-ion hybrid capacitors

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VUV imaging of type-ⅠELM filamentary structures and their temporal characteristics on EAST

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Plasma Science and technology 2024年第11期26卷 22-31页

作者： Rongjing DENG Tingfeng MING Bang LI Qiqi SHI Shanwei HOU Shuqi YANG Xiaoju LIU Shaocheng LIU Guoqiang LI Xiang GAO Yasuhiro SUZUKI Yunfeng LIANG Institute of Plasma Physics Hefei Institutes of Physical ScienceChinese Academy of SciencesHefei 230031People’s Republic of China University of Science and Technology of China Hefei 230026People’s Republic of China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060People’s Republic of China Graduate School of Advanced Science and Engineering Hiroshima UniversityHigashi-Hiroshima 739-8527Japan Forschungszentrum Jülich GmbH Institut für Energie-und Klimaforschung-PlasmaphysikJülich D-52425Germany

In the H-mode experiments conducted on the Experimental Advanced Superconducting Tokamak(EAST),fluctuations induced by the so-called edge localized modes(ELMs)are captured by a high-speed vacuum ultraviolet(VUV)imaging *** field line-aligned filamentary structures are analyzed in this *** transport induced by ELM filaments in the scrape-off layer(SOL)under different discharge conditions is analyzed by comparing the VUV signals with the divertor probe *** is found that convective transport along open field lines towards the divertor target dominates the parallel ion particle transport mechanism during *** toroidal mode number of the filamentary structure derived from the VUV images increases with the electron density pedestal *** analysis of the toroidal distribution characteristics during ELM bursts reveals toroidal *** influence of resonance magnetic perturbation(RMP)on the ELM size is also analyzed using VUV imaging *** the phase difference of the coil changes periodically,the widths of the filaments change as ***,the temporal evolution of the ELMs on the VUV signals provides rise time and decay time for each single ELM event,and the results indicate a negative correlation trend between these two times.

关键词： EAST tokamak VUV imaging filamentary structure temporal characteristics RMP

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Tuning magnetic anisotropy in a Fe5GeTe2 monolayer through doping and strain

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Physical Review B 2024年第18期110卷 184418-184418页

作者： Xunwu Hu Dao-Xin Yao Kun Cao Center for Neutron Science and Technology Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices State Key Laboratory of Optoelectronic Materials and Technologies School of Physics Sun Yat-Sen University Guangzhou 510275 China Department of Physics College of Physics and Optoelectronic Engineering Jinan University Guangzhou 510632 China

Controlling magnetic anisotropy energy (MAE) in two-dimensional ferromagnetic materials is crucial for designing novel spintronic devices. Using first-principles calculations, we systematically investigate the magnetic properties of monolayer Fe5GeTe2 (F5GT) under two scenarios: (I) Co and Ni doping and (II) compressive and tensile strains. Our results show that the F5GT monolayer exhibits a weak in-plane MAE, which can be significantly enhanced by Co doping. Additionally, a 1% compressive strain switches the magnetic easy axis from in plane to out of plane, while 4% compressive strain can further enhance the out-of-plane MAE. Spin-orbit coupling matrix analysis reveals that the enhancement of in-plane MAE in Co-doped F5GT arises from changes in 〈px|Lz|py〉 of Te and 〈dxy|Lz|dx2+y2〉 of Fe(2) and Fe(3). The effect of compressive strain is primarily attributed to a substantial increase in the positive contribution from 〈dxy|Lz|dx2+y2〉 of Fe(1).

关键词： Magnetic anisotropy Magnetism Spintronics 2-dimensional systems Ferromagnets Density functional theory First-principles calculations

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Methods to improve the PCM yield of 12µm vanadium oxide uncooled infrared detector mass production process on 200mm Wafers 10

Methods to improve the PCM yield of 12µm vanadium oxide unc...

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10th Symposium on Novel optoelectronic detection technology and Applications

作者： Ning, Ning Zhou, HongXi Zhang, QiYu Gong, XiHuai Cai, ShengDong Si, Jing Peng, Pan Peng, LuLu Pan, BoJin Jiang, YaDong School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China United Microelectronics Center Co. Ltd. Chongqing401332 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

To address the technological challenges associated with mass production of 12 µm vanadium oxide (VOx) uncooled infrared detectors on the 200 mm fabrication platform, research efforts were focused on enhancing the electrical Process Control Monitoring (PCM) yield of the platform. The Titanium-enhanced Anchor process and low-stress silicon nitride films were applied to resolve issues such as poor connectivity of pixel contact chains, stress mismatch between low-temperature silicon nitride films and detector structures, and insufficient sidewall coverage. This approach resulted in a significant reduction in the failure rate of the detector's pixel via chain structure, effectively addressing issues such as pixel structure collapse due to stress mismatch and premature PI release caused by inadequate sidewall coverage. The PCM yield associated with the detector process improved to over 95%, thereby meeting the mass production requirements for the detector product. © 2025 SPIE.

关键词： Silicon nitride

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Brightγ-ray source with large orbital angular momentum from the laser near-criticalplasma interaction

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Plasma Science and technology 2022年第9期24卷 15-23页

作者： Mamat Ali BAKE Suo TANG Baisong XIE Xinjiang Key Laboratory of Solid State Physics and Devices Xinjiang UniversityUrumqi 830046Peopleʼs Republic of China School of Physics Science and Technology Xinjiang UniversityUrumqi 830046Peopleʼs Republic of China Key Laboratory of Beam Technology of the Ministry of Education and College of Nuclear Science and TechnologyBeijing Normal UniversityBeijing 100875Peopleʼs Republic of China College of Physics and Optoelectronic Engineering Ocean University of ChinaQingdao 266100Peopleʼs Republic of China

We propose a new laser-plasma-based method to generate brightγ-rays carrying large orbital angular momentum by interacting a circularly polarized Laguerre–Gaussian laser pulse with a near-critical hydrogen plasma conflned in an over-dense solid *** the flrst stage of the interaction,it is found via fully relativistic three-dimensional particle-in-cell simulations that high-energy helical electron beams with large orbital angular momentum are *** the second stage,this electron beam interacts with the laser pulse reflected from the plasma disc behind the solid tube,and helicalγbeams are generated with the same topological structure as the electron *** results show that the electrons receive angular momentum from the drive laser,which can be further transferred to theγphotons during the ***γbeam orbital angular momentum is strongly dependent on the laser topological charge l and laser intensity a_(0),which scales as L_(γ)∝a_(0)~4.A short(duration of 5 fs)isolated helicalγbeam with an angular momentum of-3.3×10^(-14)kg m~2 s^(-1)is generated using the Laguerre–Gaussian laser pulse with l=*** peak brightness of the helicalγbeam reaches 1.22×10^(24)photons s^(-1)mm^(-2)mrad^(-2)per 0.1%BW(at 10 Me V),and the laser-to-γ-ray angular momentum conversion rate is approximately 2.1%.

关键词： laser plasma interaction Laguerre–Gaussian laser γ-ray emission orbital angular momentum particle-in-cell simulation

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Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors

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Nano Research 2022年第5期15卷 4646-4652页

作者： Yulin Yang Tong Yang Tingting Song Jun Zhou Jianwei Chai Lai Mun Wong Hongyi Zhang Wenzhang Zhu Shijie Wang Ming Yang Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices School of Optoelectronic and Communication EngineeringXiamen University of TechnologyXiamen 361024China Department of Applied Physics The Hong Kong Polytechnic UniversityHung HomKowloonHong Kong SARChina College of Physics and Space Science China West Normal UniversityNanchong 637002China Institute of Materials Research and Engineering Agency for ScienceTechnology and Research(A*STAR)2 Fusionopolis WayInnovis 138634Singapore

The integration of high-k dielectrics with two-dimensional(2D)semiconductors is a critical step towards high-performance nanoelectronics,which however remains challenging due to the high density of interface states and the damage to the monolayer 2D *** this study,we propose a selective hydrogenation strategy to improve the interface properties while the 2D semiconductors are not *** the interface of monolayer molybdenum disulfide(MoS_(2))and silicon nitride as an example,we show substantially improved interface properties for electronic applications after the interfacial hydrogenation,as evidenced by reduced inhomogeneous charge redistribution,increased band offset,and nearly intact electronic properties of MoS_(2).Importantly,this hydrogenation process selectively occurs only at the silicon nitride surface and is compatible with the current semiconductor fabrication *** further show that this strategy is general and applicable to other interfaces between high-k dielectrics and 2D semiconductors such as hafnium dioxide(HfO_(2))on the monolayer MoS_(2).Our results demonstrate a simple yet viable way to improve the integration of high-k dielectrics on a broad range of 2D transition metal disulfide semiconductors,shedding light on practical electronic and optoelectronic applications.

关键词： two-dimensional(2D)materials high-k dielectrics molybdenum disulfide interfacial properties transition metal disulfide(TMD)

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All-optical logic devices based on black arsenic-phosphorus with strong nonlinear optical response and high stability

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Opto-Electronic Advances 2022年第1期5卷 13-23页

作者： Leiming Wu Taojian Fan Songrui Wei Yijun Xu Ye Zhang Dingtao Ma Yiqing Shu Yuanjiang Xiang Jun Liu Jianqing Li Krassimir Panajotov Yuwen Qin Han Zhang Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science&TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceShenzhen Key Laboratory of Micro-Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy(SZ)Shenzhen UniversityShenzhen 518060China Faculty of Information Technology Macao University of Science and TechnologyMacao 519020China Department of Applied Physics and Photonics(IR-TONA) Vrije Universiteit BrusselsPleinlaan 2B-1050 BrusselsBelgium Institute of Advanced Photonics Technology School of Information EngineeringGuangdong University of TechnologyGuangzhou 510006China

The Kerr nonlinearity in two-dimensional(2D)nanomaterials is emerging as an appealing and intriguing research area due to their prominent light processing,modulation,and manipulation *** this contribution,2D black arsenic-phosphorus(B-AsP)nanosheets(NSs)were applied in nonlinear photonic devices based on spatial self-phase modula-tion(SSPM)*** applying the Kerr nonlinearity in 2D B-AsP,an all-optical phase-modulated system is proposed to realize the functions of“on”and“off”in all-optical *** using the same all-optical phase-modulated system,another optical logic gate is proposed,and the logical“or”function is obtained based on the 2D B-AsP NSs ***,by using the SSPM method,a 2D B-AsP/SnS_(2) hybrid structure is fabricated,and the result illustrates that the hybrid structure possesses the ability of the unidirectional nonlinear excitation,which helps in obtaining the function of spatial asymmetric light *** function is considered an important prerequisite for the realization of diode functionalization,which is believed to be a factor in important basis for the design of isolators as *** initial investig-ations indicate that 2D B-AsP is applicable for designing optical logical devices,which can be considered as an import-ant development in all-optical information processing.

关键词： B-AsP nanomaterial all-optical phase-modulated system spatial asymmetric light propagation

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