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Temperature-insensitive micro-displacement sensor with spindle-shaped structure single mode fiber

optoelectronics Letters 2025年

作者： ZHANG Weihua MU Jinlin WANG Hao WANG Dong YU Haozheng TAO Yipeng Engineering Research Center of Optoelectronic Devices and Communication Technology，Ministry of Education， Tianjin Key Laboratory of Film Electronic and Communication Devices， School of Integrated Circuit Science and Engineering， Tianjin University of Technology Engineering Infrastructure Department，Autonomous Driving Department Xiaomi EV Company Ltd

A temperature-insensitive micro-displacement sensor based on a spindle-shaped single mode fiber (SMF) is presented and demonstrated. The SMF is bent into a balloon-shaped SMF and burned into a spindle-shaped SMF by a flame. Due to the bending of the fiber， part of the incident light leaks from the fiber core into the fiber cladding， which excites higher order cladding modes. Therefore， modal interference occurs. The experimental results show that the maximum sensitivity of the sensors is -203 pm/μm when micro-displacement varies from 0 to 80 μm. The sensors are insensitive to temperature in the range of 20-70℃. In addition， the sensors have the advantages of simple structure， low cost， small volume， high sensitivity and stability， which can be widely used in numerous high-precision industrial measurements and civil engineering structure monitoring fields.

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Luminescence Properties of Tb3+ Doped High-Density Germanate Scintillating Glasses for X-Ray Imaging

SSRN

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SSRN 2025年

作者： Huang, Canhui Zhao, Jingtao Bai, Gongxun Zhao, Shilong Xu, Shiqing Huang, Lihui Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province College of Optical and Electronic Technology China Jiliang University Hangzhou310018 China

High-density germanate glasses doped with Tb3+ ions were synthesized via the melt-quenching method. The physical and luminescent properties of these glasses were characterized through various techniques, including density measurement, differential scanning calorimetry (DSC), photoluminescence (PL) spectroscopy, X-ray excited luminescence (XEL) spectroscopy, and fluorescence decay analysis. The densities of the prepared glass samples were greater than 6.1 g/cm3. Upon excitations of ultraviolet (UV) and X-rays, the glasses emitted intense green light. Fluorescence lifetime measurements showed that the fluorescence lifetimes of the strongest emission with peak at 544 nm ranged from 1.52 ms to 1.32 ms under 377 nm excitation. In the glass specimens, the maximum XEL integral intensity reached roughly 26% of that of the commercially available Bi4Ge3O12(BGO) crystal. These results suggest that Tb3+-doped high-density germanate scintillating glasses hold potential as scintillation materials for X-ray imaging applications. © 2025, The Authors. All rights reserved.

关键词： Differential scanning calorimetry

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Zeeman splitting and quantum-limit magnetoresistance anomaly in the topological insulator β-Ag2Se

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Physical Review B 2025年第8期111卷 085135-085135页

作者： Yue Zhao Lei Shi Kuan Li Huakun Zuo Gangjian Jin Zhifeng Xue Wei Zhou Dingyong Zhong Donghui Guo Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices School of Physics Sun Yat-sen University Guangzhou 510275 China School of Materials Science and Engineering State Key Laboratory of Optoelectronic Materials and Technologies Key Lab of Polymer Composite & Functional Materials Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Sun Yat-sen University Guangzhou 510275 China Wuhan National High Magnetic Field Center and School of Physics Huazhong University of Science and Technology Wuhan 430074 China State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-sen University Guangzhou 510275 China

Topological insulators (TIs) represent a unique class of materials with significant potential for both fundamental research and future applications. The characteristic band inversion in TIs gives rise to unique properties in their bulk states. In this paper, we report exotic features of nontrivial bulk states in a TI β-Ag2Se. The investigated crystals exhibit resistivity-temperature behavior characteristic of doped semiconductors, with a band gap that aligns well with theoretical electronic structure calculations. Systematic magnetotransport measurements reveal a three-dimensional (3D) anisotropic Fermi pocket resulting from electron doping, indicating that bulk states predominantly contribute to the observed properties. Under parallel magnetic and electric fields, Zeeman splitting is observed, giving a Landé g factor of ∼10. Furthermore, we detect anomalous longitudinal magnetoresistance (MR) dips in the quantum limit when only the lowest Landau level is occupied, which are closely related to the field-induced topological phase transition and reminiscent of the forbidden backscattering in TIs due to the spinor orthogonality. These intriguing transport phenomena combined with theoretical calculations elucidate the topological nature of β-Ag2Se as a TI and offer a promising foundation for developing TI-based devices.

关键词： Topological insulators

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Ultra-sensitive fluorescence-activated droplet single-cell sorting based on Tetramer-HCR-EvaGreen amplification

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Microsystems & Nanoengineering 2025年第1期11卷 197-209页

作者： Long Chen Yi Xu Lele Zhou Ding Ma Rong Zhang Yifan Liu Xianqiang Mi Shanghai Institute of Microsystem and Information Technology Chinese Academy of SciencesShanghai 200050China Shanghai Advanced Research Institute Chinese Academy of SciencesShanghai 201210China University of Chinese Academy of Sciences Beijing 100049China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Shanghai Clinical Research and Trial Center Shanghai 201210China State Key Laboratory of Advanced Medical Materials and Devices ShanghaiTech UniversityShanghai 201210China School of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesChinese Academy of SciencesHangzhou 310024China

The current single-cell analysis technologies such as fluorescence-activated cell sorting(FACS)and fluorescence-activated droplet sorting(FADS)could decipher the cellular heterogeneity but were constrained by low sorting performance and cell ***,an ultra-sensitive single-cell sorting platform has been developed by integrating the FADS technology with Tetramer-HCR-EvaGreen(THE)fluorescence signal *** THE system produced much higher fluorescence signal than that of the single Tetramer or Tetramer-HCR signal *** application to target MCF-7 cells,the platform exhibited high efficacy and selectivity while maintaining more than 95%cell *** THE-FADS achieved sorting efficiencies of 55.5%and 50.3%with purities of 91%and 85%for MCF-7 cells in PBS solutions and simulated serum samples,*** sorted MCF-7 cells showed similar proliferation together with CK19 and EGFR mRNA expression compared with the control *** established THE-FADS showed the promising prospects to cellular heterogeneity understanding and personalized medicine.

关键词： fluorescence signal amplification personalized medicine single cell sorting decipher cellular heterogeneity cellular heterogeneity ultra sensitive fluorescence activated droplet sorting cell viability tetramer hcr evagreen amplification

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Nitric oxide assists nitrogen reduction reaction on 2D MBene: A theoretical study

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Chinese Chemical Letters 2024年第5期35卷 428-433页

作者： Chaozheng He Jia Wang Ling Fu Wei Wei Henan Engineering Center of New Energy Battery Materials College of Chemistry and Chemical EngineeringShangqiu Normal UniversityShangqiu 476000China School of Chemistry and Chemical Engineering Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage&Novel Cell TechnologyLiaocheng UniversityLiaocheng 252059China Institute of Environment and Energy Catalysis Shaanxi Key Laboratory of Optoelectronic Functional Materials and DevicesSchool of Materials Science and Chemical EngineeringXi’an Technological UniversityXi’an 710021China College of Resources and Environmental Engineering Tianshui Normal UniversityTianshui 741001China

Electrocatalytic synthesis of ammonia as an environment-friendly and sustainable development method has received widespread attention in recent ***-dimensional(2D)materials are a promising catalyst for ammonia synthesis due to their large surface *** this work,we have constructed a series of 2D metal borides(MBenes)with transition metal(TM)defects(TMd-MBenes)and comprehensively calculated the reactivity of electrocatalytic synthesis of ammonia-based on density functional *** results have demonstrated that the TMd-MBenes can effectively activate nitrogen oxide(NO)and nitrogen(N2)molecules *** interesting,the co-chemisorption of O atoms,dissociated from NO,can facilitate the spilled of the inert N2 molecules into single N atoms,which can further hydrogenate into ammonia easily with an ultralow limiting potential of 0.59 V on *** research has not only provided clues for catalyst design for experimental study but also paved the way for the industrial application of electrocatalytic ammonia synthesis.

关键词： 2D mbenes Nitrogen electro-reduction DFT N_(2)activation Ammonia synthesis

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Secondary electron emission and photoelectric emission with account of excited electrons’ moving backward emission surface

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Results in Physics 2024年 60卷

作者： Li, Xiang Xie, Ai-Gen Tu, Long School of Physics and Optoelectronic Engineering Nanjing University of Information Science & Technology Nanjing 210044 China Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean Nanjing University of Information Science & Technology Nanjing 210044 China Jiangsu international Joint Laboratory on Meteorological Photonics and Optoelectronic Detection Nanjing University of Information Science & Technology Nanjing 210044 China

From existing old photoelectric emission PEE and secondary electron emission SEE models and the process that 50 % excited electrons are treated as as those moving backward emission surface, this study develops new SEE model for negative electron affinity semiconductor NEAS with large l_SEE and new PEE model, respectively;l_SEE denotes mean escape depth of secondary electrons. From our investigations of PEE from metals and NEAS with large l_PEE and SEE from NEAS with large l_SEE, it can be concluded that the new SEE model for NEAS with large l_SEE and new PEE model developed here are correct;l_PEE denotes mean escape depth of photo-emitted electrons. The theories of SEE from insulators with 120 Å≤ l_SEE ≤ 1.0 × 10⁴ Å are also developed and discussed. © 2024 The Author(s)

关键词： Absolute quantum efficiency Excited electrons’ moving backward Mean surface escape probability Photoelectric emission Secondary electron emission

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Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition

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Nano Letters 2024年第27期24卷 8277-8286页

作者： Liu, Hongwei Zhang, Tianyi Wu, Peng Lee, Hae Won Liu, Zhenjing Tang, Tsz Wing Tang, Shin-Yi Kang, Ting Park, Ji-Hoon Wang, Jun Zhang, Kenan Zheng, Xudong Peng, Yu-Ren Chueh, Yu-Lun Liu, Yuan Palacios, Tomás Kong, Jing Luo, Zhengtang Department of Chemical and Biological Engineering Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction The Hong Kong University of Science and Technology Kowloon999077 Hong Kong Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Department of Materials Science and Engineering National Tsing-Hua University Hsinchu30013 Taiwan Department of Materials Science and Engineering Korea University Seoul02841 Korea Republic of Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha410082 China

The controlled vapor-phase synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for functional applications. While chemical vapor deposition (CVD) techniques have been successful for transition metal sulfides, extending these methods to selenides and tellurides often faces challenges due to uncertain roles of hydrogen (H2) in their synthesis. Using CVD growth of MoSe2 as an example, this study illustrates the role of a H2-free environment during temperature ramping in suppressing the reduction of MoO3, which promotes effective vaporization and selenization of the Mo precursor to form MoSe2 monolayers with excellent crystal quality. As-synthesized MoSe2 monolayer-based field-effect transistors show excellent carrier mobility of up to 20.9 cm2/(V·s) with an on-off ratio of 7 × 107. This approach can be extended to other TMDs, such as WSe2, MoTe2, and MoSe2/WSe2 in-plane heterostructures. Our work provides a rational and facile approach to reproducibly synthesize high-quality TMD monolayers, facilitating their translation from laboratory to manufacturing. © 2024 American Chemical Society.

关键词： Monolayers

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P-22: Fabrication of Ultra Short Channel Oxide Thin Film Transistors

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SID Symposium Digest of Technical Papers 2024年第1期55卷 1441-1443页

作者： Jiangbo Yao Nian Liu Juan Liu Chuanbao Luo Xin Zhang Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou China Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. Ltd Shenzhen China 518132

By utilizing flat display panel manufacturing equipment and innovative techniques, we have successfully developed short channel Top-gate amorphous InGaZnO4 thin-film transistors (TG a-IGZO TFTs) at Gen4.5. Despite the challenge of facing issues with the lateral diffusion of hydrogen during process and short channel effects, we managed to optimize the uniformity and drain-induced barrier lowering with the novel structure of TFTs. After optimizing the device structure, we have achieved short channel TFTs with channel length of 1.3um, Vth of - 0.03V, mobility of 9.77 cm 2 /Vs, and DIBL of 29mV/V, and successfully make a demo of 7.1inch miniLED with the ultra short channel TFTs.

关键词： Short channel TFTs a-IGZO High resolution

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37-4: A phenanthroline derivative modified by arylphosphine oxide moiety as nCGL in tandem OLEDs

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 316-318页

作者： Shao-Guang Wu Min Song Wan-Qian Zhao Zi-Fan Hu Dong-Ying Zhou Xu-Hui Zhu Liang-Sheng Liao State Key Laboratory of Luminescent Materials and Devices Institute of Polymer Optoelectronic Materials and Devices South China University of Technology (SCUT) Guangzhou China 510640 Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Soochow University Suzhou Jiangsu China 215123

5-(6-(Diphenylphosphinyl)-2-naphthyl)-1,10-phenanthroline (pPhen-NaDPO) is reported as a promising n-type charge-generation layer in efficient and stable tandem OLEDs.

关键词： Charge-generation layer Tandem organic light-emitting diodes Phenanthrolines Phosphine oxides

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Multi-pulse operation in an actively Q-switched Er-doped fiber laser based on electro-optic modulator

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optoelectronics Letters 2021年第12期17卷 729-733页

作者： ZHANG Ailing LIU Chang PAN Honggang GUO Shuying Engineering Research Center of Optoelectronic Devices&Communication Technology Ministry of EducationTianjin Key Laboratory of Film Electronic and Communication DevicesSchool of Electrical and Electronic EngineeringTianjin University of TechnologyTianjin 300384China

In this paper,we report an experimental observation of different states of multi-pulse operation in an actively Q-switched Er-doped fiber laser,which has applications in pulse coding in optical *** Q factor is switched by an electro-optic *** separated multiple pulses are obtained due to the short response time of the *** influence of pump power and modulation frequency on output pulse state is *** the experiment,the repetition rate of Q-switched pulse is not always consistent with the modulation ***-pulse,single-dual-pulse,dual-pulse,dual-triple pulse,and multiple pulses are observed in one modulation period by increasing pump ***-pulse is also observed in two or three modulation periods by increasing the frequency of modulation *** addition,the waveform of modulating signal and the polarization state of modulated signal also affect the multi-pulse operation accordingly.

关键词： switched pulse fiber

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