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The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films

Plasma Science and technology 2022年第6期24卷 157-163页

作者： Yan YANG Peiyu JI Maoyang LI Yaowei YU Jianjun HUANG Bin YU Xuemei WU Tianyuan HUANG College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060People's Republic of China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060People's Republic of China Advanced Energy Research Center Shenzhen UniversityShenzhen 518060People's Republic of China School of Optoelectronic Science and Engineering Soochow UniversitySuzhou 215123People's Republic of China School of Physical Science and Technology Soochow UniversitySuzhou 215123People's Republic of China Institute of Plasma Physics Chinese Academy of SciencesHefei 230031People's Republic of China

A reactive helicon wave plasma(HWP)sputtering method is used for the deposition of tungsten nitride(WNx)thin films.N_(2)is introduced downstream in the diffusion *** impacts of N_(2)on the Ar-HWP parameters,such as ion energy distribution functions(IEDFs),electron energy probability functions(EEPFs),electron temperature(Te)and density(ne),are *** the addition of N_(2),a decrease in electron density is observed due to the dissociative recombination of electrons with N_(2)^(+).The similar IEDF curves of Ar+and N_(2)^(+) indicate that the majority ofN_(2)^(+) stems from the charge transfer in the collision between Ar+and N_(2).Moreover,due to the collisions between electrons and N_(2)ions,EEPFs show a relatively lower Tewith a depletion in the high-energy *** increasing negative bias from 50 to 200 V,a phase transition from hexagonal WN to fcc-WN0.5is observed,together with an increase in the deposition rate and roughness.

关键词： helicon wave plasma reactive sputtering tungsten nitride plasma diagnosis

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Self-temperature compensation approach for fiber specklegram magnetic field sensor based on polarization specklegram analysis 8

Self-temperature compensation approach for fiber specklegram...

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8th Symposium on Novel Photoelectronic detection technology and Applications

作者： Hu, Shicheng Liu, Haifeng Liu, Bo Lin, Wei Zhang, Hao Song, Binbin Wu, Jixuan Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology Institute of Modern Optics Nankai University Tianjin300350 China Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology Institute of Modern Optics Nankai University Tianjin300350 China Southern Marine Science and Engineering Guangdong Laboratory Zhuhai519000 China Key Laboratory of Computer Vision and Systems Ministry of Education School of Computer Science and Engineering Tianjin University of Technology Tianjin300384 China Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems College of Electronic and Information Engineering Tianjin Polytechnic University Tianjin300387 China

ISBN: (数字)9781510653122

ISBN: (纸本)9781510653115

In this letter, we proposed a self-temperature-compensation approach for fiber specklegram sensor (FSS) based on polarization specklegram analysis. The temperature compensation is achieved by comparing the variation difference of the two specklegrams with vertical linear polarization state. We designed a fiber specklegram magnetic field sensor employing this method and the magneto-birefringence effect of magnetic fluid. The measurement of magnetic field with high stability and good repeatability has been successfully achieved, which demonstrated the effectiveness of the proposed method. Due to the merits of low cost, ease of implement and system simplicity, the proposed method can promote the practical use of the FSS in long term monitoring. © 2022 SPIE

关键词： Polarization

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The interlayer twist effectively regulates interlayer excitons in InSe/Sb van der Waals heterostructure

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npj Computational Materials 2024年第1期10卷 1274-1281页

作者： Anqi Shi Ruilin Guan Jin Lv Zifan Niu Wenxia Zhang Shiyan Wang Xiuyun Zhang Bing Wang Xianghong Niu Institute of Advanced Materials(IAM) School of Science and College of Electronic and Optical EngineeringNanjing University of Posts&TelecommunicationsNanjing210023China Key Laboratory of Magnetic Molecules Magnetic Information Materials Ministry of EducationSchool of Chemical and Material ScienceShanxi Normal UniversityTaiyuan030031China School of Optoelectronic Engineering Chongqing University of Posts and TelecommunicationsChongqing400065P.R.China College of Physics Science and Technology Yangzhou UniversityYangzhou225002China Institute for Computational Materials Science Joint Center for Theoretical Physics(JCTP)School of Physics and ElectronicsHenan UniversityKaifeng475004China Key Laboratory of Quantum Materials and Devices(Southeast University) Ministry of EducationNanjing211189China

The interlayer twist angle endows a new degree of freedom to manipulate the spatially separated interlayer excitons in van der Waals(vdWs)***,we find that the band-edgeΓ-Γinterlayer excitation directly forms interlayer exciton in InSe/Sb heterostructure,different from that of transition metal dichalcogenides(TMDs)heterostructures in two-step processes by intralayer excitation and *** tuning the interlayer coupling and breathing vibrational modes associated with theΓ-Γphotoexcitation,the interlayer twist can significantly adjust the excitation peak position and lifetime of *** interlayer excitation peak in InSe/Sb heterostructure can shift~400 meV,and the interlayer exciton lifetime varies in hundreds of nanoseconds as a periodic function of the twist angle(0°-60°).This work enriches the understanding of interlayer exciton formation and facilitates the artificial excitonic engineering of vdWs heterostructures.

关键词： interlayer twist excitation

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Three-dimensional constellation design based on centroid-corrected geometric shaping with optimized average Hamming distance

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Optics Express 2025年第12期33卷 25094-25105页

作者： Chen Wang Bo Liu Jianxin Ren Yaya Mao Xiumin Song Shuaidong Chen Jianye Zhao Yu Bai Haojun Liu Yongyi Yu Chuanxi Zhang Rahat Ullah Institute of Optics and Electronics Nanjing University of Information Science & Technology Nanjing 210044 China State Key Laboratory Cultivation Base of Atmospheric Optoelectronic Detection and Information Fusion Nanjing University of Information Science & Technology Nanjing 210044 China Jiangsu International Joint Laboratory for Meteorological Photonics and Optoelectronic Detection Nanjing University of Information Science & Technology Nanjing 210044 China Jiangsu Engineering Research Center for Intelligent Optoelectronic Sensing Technology of Atmosphere Nanjing University of Information Science & Technology Nanjing 210044 China Beijing University of Posts and Telecommunications Beijing 100876 China Department of Electronic Engineering Tsinghua University Beijing 100084 China Nanjing University of Posts and Telecommunications Nanjing 210003 China

In this paper, a novel (to our knowledge) three-dimensional (3D) constellation design based on centroid-corrected geometric shaping (CCGS) with optimized average Hamming distance (OAHD) is proposed, referred to as 3D-CCGS-OAHD. This scheme employs a centroid-correction technique to optimize the constellation point distribution and ensure a balanced geometry for higher constellation figure of merit (CFM). Meanwhile, a simulated annealing (SA) algorithm is used to minimize the average Hamming distance (AHD) between adjacent constellation points and explore a better bit-to-symbol mapping strategy superior to Gray mapping to improve the bit error rate (BER) performance. The 3D-CCGS-OAHD scheme was successfully demonstrated over a 2 km 7-core fiber. Results show that the 3D-CCGS constellation achieves a sensitivity gain of 0.84 dB compared to the traditional 3D constellation under Gray mapping. In addition, the 3D-CCGS-OAHD scheme achieves a gain of 1.29 dB compared to the traditional 3D constellation. The experiment results demonstrate that the proposed scheme is suitable for short-distance optical communication systems and has promising research prospects.

关键词： Frequency division multiplexing Optical signals Optical systems Phase modulation Quadrature amplitude modulation Variable optical attenuators

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Effective stabilization of photobleaching of BAC-Si in bismuth-and erbium-codoped optical fibers by 830 nm laser repeated pumping

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Chinese Optics Letters 2025年第1期23卷 19-24页

作者： Qi Yang Boyang Hu Jie Gao Hongxin Ding Jialang Huang Yushi Chu Jianzhong Zhang Gang-Ding Peng Key Laboratory of In-fiber Integrated Optics of Ministry of Education College of Physics and Optoelectronic EngineeringHarbin Engineering UniversityHarbin 150001China Key Laboratory of Photonic Materials and Devices Physics for Oceanic Applications Ministry of Industry and Information TechnologyCollege of Physics and Optoelectronic EngineeringHarbin Engineering UniversityHarbin 150001China Fiber Optical Sensing Center for Excellence Yantai Research InstituteHarbin Engineering UniversityYantai 264006China Photonics and Optical Communications School of Electrical Engineering and TelecommunicationsUniversity of New South WalesSydney NSW 2052Australia

The photobleaching(PB)effect of bismuth active center(BAC)-related silicon(BAC-Si)in the bismuth-and erbium-codoped optical fiber(BEDF)under repeated pumping was *** results demonstrated that the irreversible PB could be eliminated after repeated pumping,while the rest of the PB could be decreased and remained stable in the subsequent *** mechanism was also discussed using electron transferring theory and the distribution function concept of activation ***,the results also demonstrated that BAC-Si could further become stable,reversible,and irreversible after PB,and new standards can be established for the BEDF to evaluate its quality.

关键词： bismuth-and erbium-codoped optical fiber photobleaching fiber laser fiber amplifier

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Ion doping simultaneously increased the carrier density and modified the conduction type of Sb_(2)Se_(3) thin films towards quasi-homojunction solar cell

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Journal of Materiomics 2021年第6期7卷 1324-1334页

作者： Guangxing Liang Xingye Chen Donglou Ren Xiangxing Jiang Rong Tang Zhuanghao Zheng Zhenghua Su Ping Fan Xianghua Zhang Yi Zhang Shuo Chen Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China Univ Rennes CNRSISCR(Institut des Sciences Chimiques de Rennes)UMR 6226F-35000RennesFrance Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology Renewable Energy Conversion and Storage CenterNankai UniversityTianjin300350China

Antimony selenide(Sb_(2)Se_(3))has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic ***,the intrinsic low carrier density and electrical conductivity limited its scope of *** this work,an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb_(2)Se_(3) thin *** Sn-doped and I-doped Sb_(2)Se_(3) thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered *** a result,the Sn-doped Sb_(2)Se_(3) thin film exhibited a great increase in carrier density by several orders of magnitude,by contrast,a less increase with one order of magnitude was achieved for the Idoped Sb_(2)Se_(3) thin ***,such cation or anion doping could simultaneously modify the conduction type of Sb_(2)Se_(3),enabling the first fabrication of a substrate structured Sb_(2)Se_(3)-based quasihomojunction thin film solar cell with configuration of Mo/Sb_(2)Se_(3)-Sn/Sb_(2)Se_(3)-I/ITO/*** obtained power conversion efficiency exceeding 2%undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity.

关键词： Sb_(2)Se_(3) Thin film Ion doping Carrier density Quasi-homojunction solar cell

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Redox Memristors with Volatile Threshold Switching Behavior for Neuromorphic Computing

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Journal of Electronic Science and technology 2022年第4期20卷 356-374页

作者： Yu-Hao Wang Tian-Cheng Gong Ya-Xin Ding Yang Li Wei Wang Zi-Ang Chen Nan Du Erika Covi Matteo Farronato Dniele Ielmini Xu-Meng Zhang Qing Luo Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029 University of Chinese Academy of Sciences Beijing 100049 Peng Cheng Laboratory Shenzhen 518055 Institute for Solid State Physics University of JenaJena 07743 Department of Quantum Detection Leibniz Institute of Photonic TechnologyJena 07743 Nanoelectronic Materials Laboratory Dresden 01187 Department of Electronics Information and BioengineeringPolitecnico di MilanoMilan 20133 Frontier Institute of Chip and System Fudan UniversityShanghai 200433

The spiking neural network(SNN),closely inspired by the human brain,is one of the most powerful platforms to enable highly efficient,low cost,and robust neuromorphic computations in hardware using traditional or emerging electron devices within an integrated *** the hardware implementation,the building of artificial spiking neurons is fundamental for constructing the whole ***,with the slowing down of Moore’s Law,the traditional complementary metal-oxide-semiconductor(CMOS)technology is gradually fading and is unable to meet the growing needs of neuromorphic ***,the existing artificial neuron circuits are complex owing to the limited bio-plausibility of CMOS *** with volatile threshold switching(TS)behaviors and rich dynamics are promising candidates to emulate the biological spiking neurons beyond the CMOS technology and build high-efficient neuromorphic ***,the state-of-the-art about the fundamental knowledge of SNNs is ***,we review the implementation of TS memristor-based neurons and their systems,and point out the challenges that should be further considered from devices to circuits in the system *** hope that this review could provide clues and be helpful for the future development of neuromorphic computing with memristors.

关键词： Memristors neuromorphic computing threshold switching

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Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer

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Nano Research 2021年第6期14卷 1814-1818页

作者： Hao Huang Hongming Guan Meng Su Xiaoyue Zhang Yuan Liu Chuansheng Liu Zhihong Zhang Kaihui Liu Lei Liao Ning Tang School of Physics and Technology Wuhan UniversityWuhan430072China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing100871China Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education School of Physics and ElectronicsHunan UniversityChangsha410082China

Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.

关键词： molybdenum disulfide(MoS2) contact linear magnetoresistance graphene insertion layer mobility

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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing

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Chinese Physics B 2021年第2期30卷 472-475页

作者： Shu-Xing Zhou Li-Kun Ai Ming Qi An-Huai Xu Jia-Sheng Yan Shu-Sen Li Zhi Jin Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Hubei Key Laboratory of High Power Semiconductor Technology Xiangyang 441021China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier *** electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after *** RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×10^(21) cm^(-3) and achieved an ultra-low specific contact resistance of 1×10^(-8)Ω·cm^(2),revealing that contact resistance depends greatly on the tunneling effect.

关键词： InGaAsBi electrical properties contact resistance rapid thermal annealing

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Robust Lead-Free Perovskite Nanowire Array-Based Artificial Synapses Exemplifying Gestalt Principle of Closure via a Letter Recognition Scheme

ADVANCED INTELLIGENT SYSTEMS

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ADVANCED INTELLIGENT SYSTEMS 2022年第7期4卷

作者： Poddar, Swapnadeep Chen, Zhesi Ma, Zichao Zhang, Yuting Chan, Chak Lam Jonathan Ren, Beitao Zhang, Qianpeng Zhang, Daquan Shen, Guozhen Zeng, Haibo Fan, Zhiyong Department of Electronic & Computer Engineering The Hong Kong University of Science and Technology Hong Kong SAR China State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences & Center of Materials Science and Optoelectronic Engineering University of Chinese Academy of Sciences Beijing China MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing China

The Gestalt principles of perceptual learning elucidate how the human brain categorizes and comprehends a set of visual elements grouped together. One of the principles of Gestalt perceptual learning is the law of closure which propounds that human perception has the proclivity to visualize a fragmented object as a preknown whole by bridging the missing gaps. Herein, a letter recognition scheme emulating the Gestalt closure principle is demonstrated, utilizing artificial synapses made of 3D integrated MA(3)Bi(2)I(9) (MBI) perovskite nanowire (NW) array. The artificial synapses exhibit short-term plasticity (STP) and long-term potentiation (LTP) and a transition from STP to LTP with increasing number of input electrical pulses. Initiatory ab initio molecular dynamics (AIMD) simulations attribute the conductance change in the MBI NW artificial synapses to the rotation of MA(+) clusters, culminating in charge exchange between MA(+) and Bi2I93-. Each device yields 40 conductance states with excellent retention >10(5) s, minimal variation (2 sigma/mean) <10%, and endurance of approximate to 10(5) cycles. MBI NW-based artificial neural network (ANN) is constructed to recognize fragmented letters alike their distinction in unabridged form and also the gradual withering of synaptic connectivity with engendered missing fragments is demonstrated, thereby successfully implementing Gestalt closure principle.

关键词： artificial synapses Gestalt principle of closure letter recognition perovskite nanowires

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