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检索条件"机构=Key Laboratory of RF Circuit and System"

共 86 条记录，以下是21-30 订阅

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Design of a Ku-Band Single Stage MMIC PA Based on Cluster Guided Bayesian Optimization

Design of a Ku-Band Single Stage MMIC PA Based on Cluster Gu...

引用

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for rf and THz Applications (IMWS-AMP)

作者： Zefang Hao Jia Guo Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University China

In this paper, a single stage gallium arsenide (GaAs) based monolithic microwave integrated circuit (MMIC) power amplifier (PA) is designed. The Bayesian optimization (BO) algorithm with clustering guided Gaussian process upper confidence bound (CG-GPUCB) method, is proposed for the optimization of the MMIC PA. To validate the developed optimization strategy, a 14GHz-16GHz KU-band PA has been designed using 0.25-μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process from Lion. The circuit is initially designed by commercial design tool with standard input-output matching. Both the proposed Bayesian method and the tool embedded optimization method are employed for circuit optimization. Simulation results show that the performance based on the proposed technique can be greatly improved compared to both the initial design and the tool embedded optimization method, the PA can achieve the output power over 28.5 dBm with an input of 21dBm, and the power-added efficiency (PAE) over 47.5% and a gain over 7.5dB.

关键词： Gallium arsenide PHEMTs Power amplifiers Microwave theory and techniques Microwave circuits Bayes methods Microwave transistors

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Design of Broadband Power Amplifier Based on Multi-Frequency Optimization Method

Design of Broadband Power Amplifier Based on Multi-Frequency...

引用

International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Jiajun Huang Yan Qu Meilin Wu Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University China

ISBN: (纸本)9781665482271

In this paper, a power amplifier (PA) optimization method based on multi-frequency load impedance is proposed. A broadband PA with Chebyshev low-pass structure operating from 2.5 GHz to 3.5 GHz is designed to verify the feasibility and effectiveness of this method. In this work, the proposed multi-frequency impedance matching method (MFIMM) is compared with the central frequency impedance matching method (CFIMM). With the same optimization algorithm, the gradient algorithm that embedded in advanced design system (ADS), the proposed multi-frequency technique shows superior performance in both optimization time and optimized PA results.

关键词： Microwave technology Microwave integrated circuits Broadband amplifiers Network topology Impedance matching Millimeter wave technology Power amplifiers

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Broadband PA Design with A Twice Optimization Method Using Bayesian Algorithm

Broadband PA Design with A Twice Optimization Method Using B...

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Zefang Hao Jia Guo Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University China

ISBN: (纸本)9781665482271

In this paper, a broadband power amplifier (PA) using 10 W GaN transistors is designed, with the operating frequency band between 2 GHz to 3 GHz. The initial design of the PA is firstly optimized with the optimizer embedded in advanced design system (ADS), after that, it was further optimized using the proposed Bayesian optimization (BO) algorithm. The detail design and optimization procedure are given, and the optimized results are analyzed. The PA obtained by the twice optimization can achieve an output power (Pout) greater than 41.1 dBm, a power added efficiency (PAE) higher than 62.5 %, and a gain greater than 11.1 dB in the operating band, which is a significant improvement compared with the performance of the initial designed PA.

关键词： Millimeter wave transistors Microwave technology Microwave integrated circuits Broadband amplifiers Millimeter wave technology Power amplifiers Optimization methods

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Temperature Fitted Poly-Harmonic Distortion Model for rf Power Transistors

Temperature Fitted Poly-Harmonic Distortion Model for RF Pow...

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Shuhao Cheng Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University China

ISBN: (纸本)9781665482271

In this work, a temperature fitted poly-harmonic distortion (PHD) model is presented. The basic theory of the PHD model and proposed modeling method is given in this paper. Simulation test example is provided with a 10W GaN HEMT device from Cree. Performance of proposed model is compared with standard temperature dependent PHD model. According to the results, the proposed model presented a prediction with high accuracy, its relative error maintains less than 1% across a big temperature range, from -20°C to 120°C. Both fundamental and harmonic prediction results are given. Load-pull simulation test is also presented, the proposed model can accurately prediction both the maximum output power region and maximum power added efficiency region in the Smith chart.

关键词： Radio frequency Temperature distribution Temperature dependence Simulation Predictive models Distortion Harmonic analysis

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Analysis of the Partition Numbers for 2-D Canonical Section-Wise Piecewise Linear Function Based Large-Signal Behavioral Model

Analysis of the Partition Numbers for 2-D Canonical Section-...

引用

International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Bo Liu Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University China

ISBN: (纸本)9781665482271

In this paper, the influence caused by the fundamental incident wave partition numbers at both input and output ports for canonical section-wise piecewise linear (CSWPL) function based large-signal behavioral model, is analyzed and discussed. The basic theory about the CSWPL model is presented, along with the detail modeling procedure for rf power transistors. Simulation test examples of a 10 W GaN HEMT, are given in this work. The model performance with different partition numbers for both fundamental incident wave at input and output ports, $\mathbf{K}$ and $\mathrm{J}$ , are analyzed and compared, for the linear, weakly nonlinear and strong nonlinear regions, respectively. The results show that the influence of the number of partitions for the incident wave at input port is greater than the output port.

关键词： Radio frequency Analytical models Millimeter wave transistors Microwave technology Simulation Millimeter wave technology HEMTs

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A Novel Tempreature-Included CSWPL Model for GaN HEMTs

A Novel Tempreature-Included CSWPL Model for GaN HEMTs

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IEEE International Conference on circuits and systems (ICCS)

作者： Xiaoqiang Tang Enduo Liu Giovanni Crupi Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China BIOMORF Department University of Messina Messina Italy

This paper presents a novel temperature-included canonical section-wise piecewise linear (CSWPL) behavioral model. The basic theory of the CSWPL model and the proposed modeling method are described in detail. A 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) provided by Wolfspeed is used for comprehensive simulation tests. A comparison is made between the proposed model and the classical temperature-dependent CSWPL model. As a result of the developed model, accurate predictions can be made over a wide range of ambient temperatures (-20°C to 130°C) and input powers. Additionally, load-pull simulation results are presented, which demonstrate that the proposed model is able to accurately predict the output power contour as well as the power-added efficiency contour.

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An Overview of Nonlinear Behavioral Modeling Approaches for Microwave GaN Power Transistors

An Overview of Nonlinear Behavioral Modeling Approaches for ...

引用

International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service (TELSIKS)

作者： Xiaoqiang Tang Bo Liu Giovanni Crupi Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China BIOMORF Department University of Messina Messina Italy

Over the past few decades, a variety of nonlinear behavioral modeling techniques have been developed for microwave GaN power transistors in order to accurately capture their nonlinear behavior. Despite these efforts, there is still a lack of systematic studies on the comparisons and analyses of the performance of the various modeling techniques proposed over the years. An overview of these large-signal behavioral modeling approaches, including both traditional approximation methods and machine learning (ML) methods, is provided in this paper. In addition, in order to explain the basic theory and application areas of each behavioral model, prediction capabilities are also discussed.

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Design of a multi-octave power amplifier using broadband load-pull X-parameters

Design of a multi-octave power amplifier using broadband loa...

引用

作者： Wu, Meilin Cai, Jialin King, Justin Chen, Shichang Su, Jiangtao Cao, Wenhui The Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China RF and Microwave Research Group Trinity College Dublin Dublin 2 Ireland

The design of a multi-octave power amplifier (PA) based on a broadband load-pull X-parameter model is described for the first time in this work. A 10-W GaN package transistor is employed for model X-parameter model extraction. Once the model is extracted, it is compared with the equivalent circuit model provided from the device manufacturer, and it is found that the X-parameter model accuracy is comparable to that of the original circuit model. In particular, the X-parameter model can accurately determine the areas of the load Smith chart leading to optimal output power and drain efficiency, essential considerations for extracting maximum device performance. A Chebyshev low-pass architecture is utilized for both the input and the output matching network designs. Finally, a multi-octave bandwidth PA, from 0.6 to 2.3 GHz, is designed. Simulation results of the broadband X-parameter model and the measured results of the realized PA are compared, with a high fidelity match evident, thus demonstrating the efficacy of the design procedure of multi-octave PA with broadband X-parameters. The output power of the realized PA across the operating frequency band remains between 39.51 and 42.41 dBm, while the drain efficiency remains above 60%, reaching as high as 73% around 2 GHz. The gain of the PA is greater than 11 dB over the complete frequency band. © 2021 John Wiley & Sons Ltd.

关键词： Power amplifiers

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Partition Analysis of DVR Model for Broadband GaN Doherty PA under Different Nonlinear States

Partition Analysis of DVR Model for Broadband GaN Doherty PA...

引用

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for rf and THz Applications (IMWS-AMP)

作者： Shijie Wang Xiaoqiang Tang Chao Yu Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University China State Key Laboratory of Millimeter Waves Southeast University China

In this paper, the partition distribution of the decomposed vector rotation (DVR) model is analyzed and discussed, a general rule of partition selection for PA under different nonlinear states are described. The AM/AM characteristic of an in-house designed GaN broadband Doherty power amplifier (DPA) is analyzed under different nonlinear conditions with different stimulus. The performance of the DVR model for the device under test (DUT) with different threshold values are compared and discussed. Comparison between the selected optimal DVR model based on the proposed general rule, the standard DVR model, and the Volterra series based models are given, superior performance is obtained, which demonstrates the efficacy of the proposed modeling approach.

关键词： Radio frequency Performance evaluation Analytical models Broadband amplifiers Conferences Power amplifiers Microwave amplifiers

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First-Pass Design of Broadband Doherty Power Amplifier

First-Pass Design of Broadband Doherty Power Amplifier

引用

IEEE International Workshop on Electromagnetics, Applications and Student Innovation (iWEM)

作者： Meilin Wu Yan Qu Jia Guo Shichang Chen Jialin Cai Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University China

ISBN: (纸本)9781665418294

In this work, a first-pass wideband Doherty power amplifier (DPA) has been designed using Wolfspeed's 10W GaN transistors. The entire design process is described. A combined network structure was designed with high and low impedance matching techniques, and the DPA is designer with a blocked optimization of the EM simulation. The fabricated DPA achieves a saturation output power up to 44.6 dBm in the 2.0-2.4 GHz frequency range, with a saturation drain efficiency (DE) over 53% and a 6 dB output power back-off (OBO) efficiency of more than 42%, which verifies the effectiveness of the first-pass broadband DPA design method.

关键词： Technological innovation Broadband amplifiers Design methodology Power amplifiers Time measurement Transistors Integrated circuit modeling

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