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检索条件"机构=Key Laboratory of RF Circuit and System"
86 条 记 录,以下是51-60 订阅
排序:
The Design of rf Front-end Chip for Typhoon Monitoring Radiometer
The Design of RF Front-end Chip for Typhoon Monitoring Radio...
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2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)
作者: Zhiming Fang Zhiqun Cheng Tang Liu Jian Zhang Lili Dang Jian Yu Key Lab.of RF Circuit and System Education MinistryHangzhou Dianzi University Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Micro-system and Information Technology
The paper presents the design and performance of a V-band radiometer MMIC with 0.1μm GaAs pHEMT technology. The circuit includes a frequency double LO chain and a resistive mixer. The resistive mixer with balance str... 详细信息
来源: 评论
Dynamic time-domain duplexing for self-backhauled millimeter wave cellular networks
Dynamic time-domain duplexing for self-backhauled millimeter...
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IEEE International Conference on Communications Workshops, ICC
作者: Russell Ford Felipe Gómez-Cuba Marco Mezzavilla Sundeep Rangan Hangzhou Dianzi University Hangzhou China Ministry of Education Key Laboratory of RF Circuit & System New York University New York NY US
Millimeter wave (mmW) bands between 30 and 300 GHz have attracted considerable attention for nextgeneration cellular networks due to vast quantities of availavery high-dimensional antenna arraysble spectrum and the po... 详细信息
来源: 评论
The design of rf front-end chip for typhoon monitoring radiometer
The design of RF front-end chip for typhoon monitoring radio...
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International Conference on Communication Technology (ICCT)
作者: Zhiming Fang Zhiqun Cheng Tang Liu Jian Zhang Lili Dang Jian Yu Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Micro-system and Information Technology Shanghai
The paper presents the design and performance of a V-band radiometer MMIC with 0.1μm GaAs pHEMT technology. The circuit includes a frequency double LO chain and a resistive mixer. The resistive mixer with balance str... 详细信息
来源: 评论
Compact Coupled-fed Printed Antenna for Eight- Band WWAN/WLAN/ WiMAX Internal Mobile Phone
Compact Coupled-fed Printed Antenna for Eight- Band WWAN/WLA...
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2014ANSYS中国技术大会
作者: ZHOU Jiangsheng WANG Yufeng CHANG Lei YU Yufeng ZHOU Tao Jiang Nan Electronic and Communication Research Institute Jiaxing China Key laboratory of RF Circuit and System Hangzhou Dianzi University Hangzhou China
A coupled-fed printed antenna for eight-band covering WWAN/WLAN/WiMAX operation in the mobile phone is *** proposed antenna comprises a long radiating strip,a short-circuited inductive shorting strip,and a coupling st... 详细信息
来源: 评论
A tunable CMOS ring VCO in a wide frequency range
A tunable CMOS ring VCO in a wide frequency range
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2nd International Conference on Multimedia Technology, ICMT 2011
作者: Zhang, Haipeng Li, Hao Wang, Yang Key Laboratory of RF Circuit and System Hangzhou Dianzi University Ministry of Education Hangzhou China
In this paper a tunable CMOS ring VCO (Voltage Controlled oscillator) is presented based on five-stage differential structure in a wide frequency range. The proposed VCO circuit is designed in CSMC 0.5μm CMOS process... 详细信息
来源: 评论
A 2.12∼2.68GHz wide tuning CMOS LC-VCO with low phase noise
A 2.12∼2.68GHz wide tuning CMOS LC-VCO with low phase noise
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China-Japan Joint Microwave Conference
作者: Zhiqun Cheng Lvpo Zhang Longqian Lin Yujie Feng Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China
A wideband LC voltage-control oscillator (VCO) is designed based on SMIC 0.18μm CMOS process, which has wide tuning range by using the switched capacitor array, while the phase noise is reduced after using the differ... 详细信息
来源: 评论
A neural network model of silicon-based millimeter-wave coplanar waveguide
A neural network model of silicon-based millimeter-wave copl...
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China-Japan Joint Microwave Conference
作者: Zhiqun Cheng Liwei Jin Qingna Wang Lingling Sun Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China
In this paper, neural network modeling techniques are presented for millimeter-wave modeling of silicon-based millimeter-wave coplanar waveguide. The neural network is trained to learn the mapping between the geometri... 详细信息
来源: 评论
A tunable CMOS ring VCO in a wide frequency range
A tunable CMOS ring VCO in a wide frequency range
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International Conference on Multimedia Technology
作者: Haipeng Zhang Hao Li Yang Wang Key Laboratory of RF Circuit & System Ministry of Education School of Electronics & Information Hangzhou Dianzi University Hangzhou China
In this paper a tunable CMOS ring VCO (Voltage Controlled oscillator) is presented based on five-stage differential structure in a wide frequency range. The proposed VCO circuit is designed in CSMC 0.5μm CMOS process... 详细信息
来源: 评论
Study of millimeter wave ALGaN/AlN/GaN HEMT
Study of millimeter wave ALGaN/AlN/GaN HEMT
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International Conference on Electronics, Communications and Control (ICECC)
作者: Zhiqun Cheng Tang Liu Liwei Jin Zhihong Feng Jianbo Song Jiayun Yin Key Laboratory of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China Science and Technology on ASIC Laboratory Hebei Semiconductor Research Institute Shijiazhuang China
A novel structure AlGaN/AlN/GaN HEMT was proposed in the paper. The barrier layer's thickness was optimized in order to increase characteristic frequency. TCAD software of Silvaco was using to simulate DC and AC p... 详细信息
来源: 评论
Design and DC parameter extraction of the high linearity Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT
Design and DC parameter extraction of the high linearity Al0...
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International Conference on Electronics, Communications and Control (ICECC)
作者: Zhiqun Cheng Qingna Wang Zhihong Feng Jianbo Song Jiayun Yin Key Laboratory of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China Science and Technology on ASIC Laboratory Hebei Semiconductor Research Institute Shijiazhuang China
DC parameter extraction of a novel high linearity Al 0.27 Ga 0.73 N/AlN/ Al 0.04 Ga 0.96 N/GaN HEMT with composited-layer and unintentionally doping barrier is presented. The devices with gate length of 0.3μm and T-s... 详细信息
来源: 评论