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检索条件"机构=Key Laboratory of RF Circuit and System"

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Positive ESD robustness of a novel anti-ESD TGFPTD SOI LDMOS

Positive ESD robustness of a novel anti-ESD TGFPTD SOI LDMOS

引用

International Conference on Computer Applications and Industrial Electronics (ICCAIE)

作者： Haipeng Zhang Liang Zhang Dejun Wang Xiaoyan Niu Wenjun Li Jie Wang Yong Wang Key Laboratory of RF Circuit & System Ministry of Education School of Electronics & Information Dianzi University Hangzhou China School of Electronic Science and Technology Faculty of Electronic Information and Electrical Engineering Dalian University of Technology Dalian China Hangzhou Hanan Semiconductor Company Limited Hangzhou China

ISBN: (纸本)9781424490547

A novel anti-ESD TGFPTD SOI LDMOS was proposed firstly for improve ESD robustness of TGFPTD SOI LDMOS in this paper. The proposed device was obtained by introducing an additional n + implantation and rapid thermal annealing into the widen p-well region of conventional TGFPTD SOI LDMOS. 2D simulation of the proposed device upon a positive current pulse stimulus of HBM indicates that a hybrid conduction mechanism of Zener diodes, BJTs, SCR, resistors and capacitors exists during ESD period. Moreover, the gate voltage is clamped below 30% of the breakdown voltage of gate oxide and the induced gate charges are released in a very short time at about 1.0μs. Therefore, the proposed anti-ESD TGFPTD SOI LDMOS is featured of very high ESD robustness.

关键词： Electrostatic discharge Logic gates Robustness Cathodes Analytical models Radio frequency Resistance

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AIGaN/GaN HEMT device structure optimization design

AIGaN/GaN HEMT device structure optimization design

引用

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated circuits, IPFA 2009

作者： Zhou, Xiaopeng Cheng, Zhiqun Hu, Sha Zhou, Weijian Zhang, Sheng Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Zhejiang 310018 China

ISBN: (纸本)9781424439102

A novel Composite-Channel AlxGa1-xN/Al yGa1-yN/GaN HEMT is designed and optimized. The influence of two-dimensional electron gas and electric field on device structure parameter is obtained from the self-consistent solution basing on theory of semiconductor energy band and quantum well. The influence of the layer structure of the device on its performance is obtained from simulation of TCAD software. Combining with results of theory analysis and simulation results, the optimization structure Al0.31Ga0.69N/- Al 0.04Ga0.96N/GaN HEMT is proposed. The simulation results show that the device with gate length of Im and gate width of 100m has the maximum transconductance of 300 mS/mm and the little fluctuation in the gate voltage from -2V to IV that shows the excellent linearity of the device, the maximum current density of 1300mAlmm, the cut-off frequency of 11.5GHz and amaximum oscillation frequency of32.5GHz. ©2009 IEEE.

关键词： Computer software

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Vertical gate rf SOI LIGBT without latch-up susceptibility

Vertical gate RF SOI LIGBT without latch-up susceptibility

引用

2009 International Semiconductor Device Research Symposium, ISDRS '09

作者： Zhang, Haipeng Su, Buchun Sun, Lingling Wang, Dejun Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou 310018 China School of Electronic and Information Dalian University of Technology Dalian 116024 China

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A 2.45GHz CMOS power amplifier with high linearity

A 2.45GHz CMOS power amplifier with high linearity

引用

International Conference on ASIC

作者： Mingfu Zhao Lingling Sun Jincai Wen Zhiping Yu Jin Kang Key Laboratory of RF Circuit & System Hangzhou Dianzi University Hangzhou China

A 2.45 GHz 0.18 ¿m rf CMOS Class-AB power amplifier (PA) with high linearity and output power for WLAN is presented in this paper. The proposed power amplifier is implemented with a two-stage architecture which is followed by an off-chip output matching network. To improve the linearity, an integrated diode linearization circuit provides a compensation mechanism for the input capacitance variation of the active devices, improving the linearity from the gain compressing. Moreover, a simple LC second harmonic tank and optimum gate biasing point is applied for the cancellation of the nonlinear harmonic generated by g m . In order to demonstrate the feasibility of the technique, two types of PAs have been designed. The improved PA at 2.4V supply voltage, has a 22.5 dB of power gain, 5 dBm increase of P 1dB , 15% and 5 dB improvement of PAE at P 1dB and IMD3, respectively, as compared with the traditional PA..

关键词： High power amplifiers Linearity Radiofrequency amplifiers Power amplifiers Radio frequency Power generation Wireless LAN Impedance matching Diodes circuits

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An equivalent lumped-circuit model for on-chip symmetric intertwined transformer

An equivalent lumped-circuit model for on-chip symmetric int...

引用

International Conference on ASIC

作者： Jin Kang Lingling Sun Jincai Wen Mingfu Zhao Key Laboratory of the RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China

A physics-based equivalent lumped-circuit model for on-chip symmetric intertwined transformer is presented in this paper. This model accurately predicts the skin effect and proximity effect of the primary and secondary coils inductors over a wide-frequency range using a ladder `4-element' structure, respectively. One transformer loop and two RC networks are used to model the substrate loss related to substrate eddy current loss and capacitive and reactive effect of lateral substrate coupling. Two transformers were fabricated on a standard 0.18-um 1P6M rf CMOS technology to further verify the accuracy of the proposed model.

关键词： Coils Radio frequency Proximity effect Semiconductor device modeling Skin effect Inductors CMOS technology Low-noise amplifiers circuit topology Spirals

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AlGaN/GaN HEMT device structure optimization design

AlGaN/GaN HEMT device structure optimization design

引用

International Symposium on Physical & Failure Analysis of Integrated circuits

作者： Xiaopeng Zhou Zhiqun Cheng Sha Hu Weijian Zhou Sheng Zhang Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Zhejiang China

A novel Composite-Channel Al x Ga 1-x N/Al y Ga 1-y N/ GaN HEMT is designed and optimized. The influence of two-dimensional electron gas and electric field on device structure parameter is obtained from the self-consistent solution basing on theory of semiconductor energy band and quantum well. The influence of the layer structure of the device on its performance is obtained from simulation of TCAD software. Combining with results of theory analysis and simulation results, the optimization structure Al 0.31 Ga 0.69 N/-Al 0.04 Ga 0.96 N/GaN HEMT is proposed. The simulation results show that the device with gate length of 1 mum and gate width of 100 mum has the maximum transconductance of 300 mS/mm and the little fluctuation in the gate voltage from -2V to 1V that shows the excellent linearity of the device, the maximum current density of 1300 mA/mm, the cut-off frequency of 11.5 GHz and a maximum oscillation frequency of 32.5 GHz.

关键词： Aluminum gallium nitride Gallium nitride HEMTs Design optimization Cutoff frequency Electrons Quantum mechanics Software performance Analytical models Transconductance

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Design of low phase noise LC VCO for UHF rfID reader

Design of low phase noise LC VCO for UHF RFID reader

引用

Asia-Pacific Conference on Communications

作者： Yunfang Zhou Zhiqun Cheng Kaihong Fu Jin Li Xiaopeng Zhou Key Laboratory of the RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781424447848

A low phase noise CMOS LC VCO (Voltage controlled oscillator) for UHF rfID (Radio Frequency Identification) reader is designed. The quadrature output differential signal is achieved through Source-Coupled-Logic frequency divider-by-two circuit. The circuit is implemented with the SMIC 0.18 um MOS technology and the simulator of Cadence Spectrerf. The simulation results show that the frequency range of VCO is from 1620 MHz to 2020 MHz before frequency divider and phase noise of -127.5 dBc/Hz at 1 MHz offset at oscillation frequency of 1.8 GHz. The frequency rang of VCO is from 810 MHz to 1010 MHz after frequency divider by two and the phase noise of -133.5 dBc/Hz @1 MHz offset at the frequency of 900 MHz.

关键词： Phase noise Voltage-controlled oscillators Radiofrequency identification Frequency synthesizers Frequency conversion Signal generators Phase locked loops Filters Counting circuits Delta-sigma modulation

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A low-power analog front end of passive UHF rfID tag IC for EPC™ C1G2

A low-power analog front end of passive UHF RFID tag IC for ...

引用

International Conference on ASIC

作者： Shaojie Zhang Lingling Sun Hui Hong Jun Liu Jian Han Shiqin Luo Key Laboratory of the RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China

This work 1 presents the design of a low-power analog front-end circuitry for fully integrated passive radio frequency identification tag operating at UHF for EPC TM C1G2. The whole circuit includes voltage multiplier, voltage reference, voltage regulator, ASK demodulator, ring oscillator, power-on-reset and modulator. In this paper, ASK demodulator with digital control is proposed and a clock calibration method for ring oscillator is chosen. The entire circuit has been designed with SMIC 0.18 μm CMOS technology. Simulation results by cadence software show the analog front-end circuitry consumes less than 2.5 uW.

关键词： Passive rfID tags Analog integrated circuits UHF integrated circuits Voltage-controlled oscillators Amplitude shift keying Demodulation Ring oscillators CMOS technology Radiofrequency identification UHF circuits

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Experimental research on TF SOL CMOS ring oscillator with EM NMOSFET and AM PMOSFET assemblies at high temperature

Experimental research on TF SOL CMOS ring oscillator with EM...

引用

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated circuits, IPFA 2009

作者： Zhang, Haipeng Ma, Lijian Wei, Tongli Feng, Yaolan Zhang, Zhengfan Key Laboratory of RF Circuit and System School of Electronics and Information Hangzhou Dianzi University Hangzhou Zhejiang 310018 China Microelectronics Center Southeast University Nanjing Jiangsu 210096 China 24th Research Institute China Electronics Technology Group Corporation Chongqing 400060 China

ISBN: (纸本)9781424439102

An SOI(Silicon On Insulator) CMOS RO(Ring Oscillator) with EM(Enhanced Mode) NMOSFET and AM(Accumulative Mode) PMOSFET assembly was studied at high temperatures. The temperature dependency of its frequency was deduced, experimentally measured and fitted with polynomial. It was proved that its frequency decrease faster below 473K and is not less than 7.75MHz even at 573K. The temperature dependency of its logic swing was also experimentally measured and fitted with polynomial, which indicates that its logic swing slightly decreases approximately according to quadratic law as temperature increases from room temperature to 573K and still lies in the correct logic margins even at high temperatures up to 573K. Therefore it is still suitable for some high temperature applications. ©2009 IEEE.

关键词： High temperature applications

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Experimental research on TF SOI CMOS ring oscillator with EM NMOSFET and AM PMOSFET assemblies at high temperature

Experimental research on TF SOI CMOS ring oscillator with EM...

引用

International Symposium on Physical & Failure Analysis of Integrated circuits

作者： Haipeng Zhang Lijian Ma Tongli Wei Yaolan Feng Zhengfan Zhang Key Laboratory of RF Circuit & System Ministry of Education School of Electronics and Information Hangzhou Dianzi University Zhejiang China Microelectronics Center South-East University Nanjing Jiangsu China The 24th Research Institute China Electronics Technology Group Corporation Chongqing China

An SOI(silicon on insulator) CMOS RO(ring oscillator) with EM(enhanced mode) NMOSFET and AM(accumulative mode) PMOSFET assembly was studied at high temperatures. The temperature dependency of its frequency was deduced, experimentally measured and fitted with polynomial. It was proved that its frequency decrease faster below 473 K and is not less than 7.75 MHz even at 573 K. The temperature dependency of its logic swing was also experimentally measured and fitted with polynomial, which indicates that its logic swing slightly decreases approximately according to quadratic law as temperature increases from room temperature to 573 K and still lies in the correct logic margins even at high temperatures up to 573 K. Therefore it is still suitable for some high temperature applications.

关键词： MOSFET circuits Ring oscillators Temperature dependence Frequency Threshold voltage Inverters Assembly systems CMOS technology Insulation Polynomials

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