This paper describes 3.3 V silicon down conversion mixer with a current bleeding Gilbert multiplier and also compares the conventional current bleeding Gilbert mixer with an improved current bleeding circuit, detail a...
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This paper describes 3.3 V silicon down conversion mixer with a current bleeding Gilbert multiplier and also compares the conventional current bleeding Gilbert mixer with an improved current bleeding circuit, detail analysis are given about the two circuits, using 0.35 um process. With a 1.675 GHz local oscillator (LO) and a 1.575 GHz rf input. The results show that the gain and IIP2 of the improved mixer is higher than conventional Gilbert-type mixer, while the noise figure is better.
In this paper, a wideband LC VCO with small Kvco fluctuation for rfID synthesizer application is designed using SMIC 0.18 mum standard CMOS process. The switched capacitor array and switched varactor array are used fo...
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In this paper, a wideband LC VCO with small Kvco fluctuation for rfID synthesizer application is designed using SMIC 0.18 mum standard CMOS process. The switched capacitor array and switched varactor array are used for wideband design. The VCO exhibited Kvco fluctuation of only 29%, which is about one third that of a conventional VCO. The simulation results show that the tuning frequency range is 64% from 0.76 GHz to 1.48 GHz, VCO Gain is from 41 MHz to 62 MHz with power consumption of about 9 mW at 1.8 V supply. The measured phase noise is less than -90 dBc/Hz at 100 kHz offset within the entire tuning range.
A novel defected ground structure(DGS) is designed and applied to a flip-chip integrated millimeter wave *** is found that,when DGS is embedded in the resonant tank and the output terminal of an oscillator,the phase n...
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A novel defected ground structure(DGS) is designed and applied to a flip-chip integrated millimeter wave *** is found that,when DGS is embedded in the resonant tank and the output terminal of an oscillator,the phase noise can be reduced and the output power is *** oscillators with and without DGS are designed and *** data shows that the phase noise of the oscillator with DGS is reduced by 4-6dB, and the output power of the oscillator is increased by 0.8dBm in comparison with the oscillator without DGS.
A novel defected ground structure (DGS) is designed and applied to a flip-chip integrated millimeter wave oscillator. It is found that, when DGS is embedded in the resonant tank and the output terminal of an oscillato...
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ISBN:
(纸本)9781424421855
A novel defected ground structure (DGS) is designed and applied to a flip-chip integrated millimeter wave oscillator. It is found that, when DGS is embedded in the resonant tank and the output terminal of an oscillator, the phase noise can be reduced and the output power is enhanced. Two oscillators with and without DGS are designed and compared. Measurement data shows that the phase noise of the oscillator with DGS is reduced by 4-6 dB, and the output power of the oscillator is increased by 0.8 dBm in comparison with the oscillator without DGS.
Low noise distributed amplifiers (DAs) using the novel low noise composite-channel Al0.3Ga0.7N/ Al0.05Ga0.95N/GaN HEMTs (CC-HEMTs) with 1m-gate-length are designed and fabricated. Simulated and measured results of the...
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Distributed amplifiers (DAs) using 1mm-gate enhancement-mode AlGaN/GaN HEMT were designed and fabricated. Design process and simulation results of the DA are given. Simulation results show the input and output VSWR (v...
Distributed amplifiers (DAs) using 1mm-gate enhancement-mode AlGaN/GaN HEMT were designed and fabricated. Design process and simulation results of the DA are given. Simulation results show the input and output VSWR (voltage standing wave ratio) of less than 2, associated gain of more than 8.5dB and gain ripple of less than 1dB at frequency from 2GHz to 6GHz.
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