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A Fast Two-Tone Active Load-Pull Algorithm for Assessing the Non-linearity of rf Devices

Chinese Journal of Electronics 2022年第1期31卷 25-32页

作者： SU Jiangtao CAI Jialing ZHENG Xing SUN Lingling Key Laboratory of RF Circuits and Systems Ministry of Education Key Laboratory of Large Scale Integrated Circuits Design Zhejiang Province

Radio frequency(rf) devices used in modern wireless systems must meet increasingly complicated spectral constraints while still operating with high power efficiency. A fast real-time two-tone active loadpull algorithm is proposed to assess the relationship between nonlinear performance with associated device load impedance variations. This algorithm employs real time measurement data to extract two-tone local nonlinear behaviour model, which is further used for the prediction of injected signal value in the active real-time loadpull system, therefore minimizing the number of iterations required for load emulation. The proposed method was validated on a real two-tone load-pull measurement bench using off-the-shelf instruments. The result shows that the measurement speed has been greatly increased without sacrifice of the impedance emulation *** intelligent two-tone load-pull algorithm is expected to be applied in the designing of modern communication system and radar transmitters, as well as the validation of the models of radio frequency transistors.

关键词： measurement speed real-time load-pull system spectral constraints radio frequency transistors real time measurement data intelligent two-tone load-pull algorithm two-tone local nonlinear behaviour model radio frequency devices impedance emulation accuracy modern communication system modern wireless systems nonlinearity radiocommunication rf devices associated device load impedance variations radar transmitters injected signal value two-tone load-pull measurement bench load emulation high power efficiency fast real-time two-tone active load-pull algorithm nonlinear performance

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Low-Profile Transmitarray Antenna with High Selective Gain Filtering Characteristic 10

Low-Profile Transmitarray Antenna with High Selective Gain F...

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10th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2024

作者： Tong, Shijun Yu, Weiliang Luo, Guo Qing Ministry of Education Hangzhou Dianzi University Key Laboratory of RF Circuits and Systems Hangzhou China

ISBN: (纸本)9798331533922

In this paper, a novel low-profile transmitarray antenna with high selective gain filtering performance is proposed. The proposed transmitarray unit cell is comprised of a magneto-electric (ME) dipole and a split-ring resonator. The ME dipole provides radiation zero at low frequency, and the splitring resonator provides radiation zero at high frequency. The transmission phase of 0° and 180° can be realized by rotating the bottom feed structure in the radiation band. The thickness of the transmitarray unit cell is 3.1mm (0.106λ). Based on the unit cell, a circular transmitarray antenna with a center frequency of 10.3GHz and a diameter of 221.2mm (7.6λ) is designed. The simulation result shows that the transmitarray achieves a 3dB gain bandwidth of 12.3%, the highest gain is 20.07dBi, the suppression level at low and high frequencies are 27.4dB and 17.7dB, respectively. And the calculated selectivity is 0.86. A high selectivity and low profile is implemented. © 2024 IEEE.

关键词： Dipole antennas

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Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution 13

Estimation of Drain-Induced Barrier Lowering Variation Due t...

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13th International Conference on Electronics, Communications and Networks, CECNet 2023

作者： Lyu, Weifeng Han, Ying Zhang, Caiyun Wei, Weijie Chen, Dengke Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310018 China

ISBN: (纸本)9781643684802

Drain-induced barrier lowering (DIBL) and its variations are regarded as significant challenges in nanometer semiconductor device and circuit analysis, design as well as fabrication. This paper investigates the statistical characteristic of DIBL due to random dopant fluctuation (RDF) effect in MOSFETs. The results exhibit that the DIBL variation is more suitably described by a gamma distribution than a Gaussian distribution, based on validation by Monte Carlo simulations. The average error and mean square error of a gamma approximation are -0.14987 and 0.42591, respectively, for the probability density function, and 0.13523 and 0.50584, respectively, for the cumulative density function, which are much smaller than the equivalent measures of a Gaussian approximation. Our study also reveals that DIBL dispersion due to RDF effect in nanometer MOSFET channels is asymmetric with a long tail, which should be described with higher moments such as skewness and kurtosis. © 2024 The authors and IOS Press.

关键词： Monte Carlo methods

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A 4-9 GHz LNA With Out-of-Band Gain Rejection Method 16

A 4-9 GHz LNA With Out-of-Band Gain Rejection Method

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16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2023

作者： Sun, Dengbao Wang, Xiang Huang, Yonkang Su, Guodong Liu, Jun Hangzhou Dianzi University Key Laboratory for RF Circuits and Systems Ministry of Education Hangzhou310018 China

ISBN: (纸本)9798350339406

This paper proposed a 4-9GHz Low noise amplifier (LNA) which is based on 0.25-μm GaAs pHEMT process. The proposed LNA adopts a method to achieve better out-of-band gain rejection performance. This method is realized by adjusting the reactance characteristic of the inductor used in the matching network. The post-layout simulation results show that the 3dB bandwidth is 2.9-10.6GHz. In the design band (4-9GHz), the gain is of 26.5±0.4 dB, the noise figure is of 0.91 ~ 1.22 dB, and the output P-1dB is of 13.7 ~ 17 dBm respectively. The proposed LNA has a compact chip size of only 1.44 mm2, including all DC and rf pads. © 2023 IEEE.

关键词： Low noise amplifiers

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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

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Chinese Physics B 2022年第7期31卷 629-636页

作者： Pei Shen Ying Wang Fei Cao The Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi UniversityHangzhou 310018China The School of Mechanical and Electronic Engineering Pingxiang UniversityPingxiang 337055China

An optimized silicon carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)structure with side-wall p-type pillar(p-pillar)and wrap n-type pillar(n-pillar)in the n-drain was investigated by utilizing Silvaco TCAD *** optimized structure mainly includes a p+buried region,a light n-type current spreading layer(CSL),a p-type pillar region,and a wrapping n-type pillar region at the right and bottom of the *** improved structure is named as *** side-wall p-pillar region could better relieve the high electric field around the p+shielding region and the gate oxide in the off-state *** wrapping n-pillar region and CSL can also effectively reduce the specific on-resistance(Ron,sp).As a result,the SNPPT-MOS structure exhibits that the figure of merit(Fo M)related to the breakdown voltage(V_(BR))and Ron,sp(V_(BR)^2R_(on,sp))of the SNPPT-MOS is improved by 44.5%,in comparison to that of the conventional trench gate SJ MOSFET(full-SJ-MOS).In addition,the SNPPT-MOS structure achieves a much fasterwitching speed than the full-SJ-MOS,and the result indicates an appreciable reduction in the switching energy loss.

关键词： 4H-silicon carbide(4H-SiC)trench gate MOSFET breakdown voltage(V_(BR)) specific onresistance(R_(on sp)) switching energy loss super-junction

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A Novel Ka-band π-type 8-dB Attenuator Unit With Phase Compensation 16

A Novel Ka-band π-type 8-dB Attenuator Unit With Phase Comp...

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16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2023

作者： Wei, Huanjie Zhou, Quanyang Leng, Huinan Zhu, Fang School of Electronics and Information Hangzhou Dianzi University Key Laboratory of Rf Circuits and Systems of Ministry of Education Hangzhou310018 China

ISBN: (纸本)9798350339406

In this paper, a novel Ka-band π-type 8-dB attenuator unit with phase compensation in 0.1-μm InGaAs pHEMT technology is presented. The introduced compensation structure reduces the phase advance of the attenuation state, hardly affects the phase lag of the reference state, and achieves the purpose of reducing the phase difference between the attenuation state and the reference state. The simulation results of the proposed attenuator unit exhibit low phase difference ( -3 ~ 1.5°) in 28-40 GHz. The amplitude error of the relative attenuation is within ± 0.2 dB, the insertion loss (IL) is 1.07-1.37 dB from 28 to 40 GHz, and the return loss (RL) of attenuation state is better than 15dB. © 2023 IEEE.

关键词： Indium alloys

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Simulation Study of Single-Event Burnout for the 4H-SiC VDMOSFET with N+ Split Source 2

Simulation Study of Single-Event Burnout for the 4H-SiC VDMO...

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2021 2nd International Conference on Physics and Engineering Mathematics, ICPEM 2021

作者： Zhou, Jiancheng Yu, Chenghao Wang, Ying Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dian zi University Hangzhou China

Silicon Carbide (SiC) power MOSFET is the next generation device in the supply system of spacecraft. However, the current degradation or catastrophic failure of the power device could be induced when a drain voltage exceeds critical condition. In this article, an improved VDMOSFET structure for the Single-Event Burnout (SEB) is demonstrated. The improved power VDMOSFET includes a P+ shielding region at the JFET region. Meanwhile, forming a CSL layer by ion-implantation at the JFET to reduce the specific on-resistance. The device is etched in both sides to form trench and then implanting N-type impurities at the side walls of the trench to form the N+ split source (SDS-VDMOSFET). The 2-D numerical simulator Silvaco Atlas was used to study the SEB performance for the 1.2 kV-rated SiC SDS-VDMOSFET in a high linear energy transfer (LET) value of 0.5 pC/μm. The simulation results show that the improved structure can effectively reduce the peak lattice temperature induced by heavy-ion and increase the SEB threshold voltage compared with the standard VDMOSFET. Furthermore, the improved structure also presents a lower specific on-resistance. As a result, the maximum temperature of the standard VDMOSFET has exceeded 3000 K at a drain voltage of 400 V. However, the maximum temperature of the improved VDMOSFET is only 2090 K at a drain voltage of 800 V. © Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

关键词： Heavy ions

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Detection of DSSS Signals Based on Autocorrelation Compressed Sampling and Deep Learning 24

Detection of DSSS Signals Based on Autocorrelation Compresse...

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24th IEEE International Conference on Communication Technology, ICCT 2024

作者： Gu, Fengyang Zheng, Shilian Yue, Keqiang Zhao, Zhijin Yang, Xiaoniu Hangzhou Dianzi University School of Communication Engineering Hangzhou China National Key Laboratory of Electromagnetic Space Security Innovation Studio of Academician Yang Jiaxing China Ministry of Education Hangzhou Dianzi University Key Laboratory of Rf Circuits and Systems Hangzhou China

ISBN: (纸本)9798350363760

This paper proposes a method that combines compressed sampling and deep learning to reduce computational complexity while ensuring the performance of detecting direct sequence spread spectrum (DSSS) signals. We consider two scenarios: one where the prior condition of the spreading code sequence period is known, and the other where this prior condition is unknown. By exploiting signal sparsity in the correlation domain, we use random measurements to reduce dimensionality before feeding data into a convolutional neural network (CNN) for detection. Extensive simulation experiments validate the feasibility of this method for direct detection of DSSS signals under low signal-to-noise ratio (SNR) conditions. The approach accomplishes signal detection tasks without signal reconstruction. © 2024 IEEE.

关键词： Autocorrelation

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An epidermal electrode based triboelectric walking energy harvester for wearable wireless sensing applications

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Science China(Technological Sciences) 2024年第3期67卷 949-957页

作者： CHANG ShiYuan LIU FuHai CHEN JinKai XIA LianBin ZHOU Hao JIANG JingYang DONG Kang ZHANG ChenHao WU Yun CHEN Jin XUAN Weipeng SUN LingLing JIN Hao DONG ShuRong LUO JiKui Ministry of Education Key Laboratory of RF Circuits and Systems Hangzhou Dianzi UniversityHangzhou 310018China Special Equipment College Hangzhou Vocational&Technical CollegeHangzhou 310018China College of Information Science and Electronic Engineering Zhejiang UniversityHangzhou 330027China ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang UniversityHangzhou 311200China

Harvesting bio-kinetic energy using a triboelectric nanogenerator(TENG) is one of the promising routes to solve the sustainable energy supply problem for wearable electronics. However, additional materials, complex fabricating processes or specific mechanical structures are needed for existing TENGs to harvest bio-kinetic energy. Besides, they need to be tightly attached to the human body, which may result in detachment and malfunction under tense human motion. Herein, an intrinsic epidermal electrode-based TENG(E-TENG) is proposed to harvest human walking energy. The wearing shoes and ground are used as tribo-materials, and the human epidermis is used as the back electrode of the E-TENG. Compared with the traditional TENGs,the E-TENG does not need any additional tribo-materials and complex mechanical structures. Under optimal conditions, the voltage output of E-TENG can reach 914 V. E-TENG has been used as a self-powered warning sensor and pedometer sensor for demonstration. Furthermore, E-TENG based self-powered wireless sensor system has been developed using a newly designed micro energy electronic switch(MEES). Ambient ultraviolet intensity, temperature and humidity information can be monitored and then transmitted to mobile phone every 3.5 min, demonstrating great potential for widespread wearable applications.

关键词： triboelectric nanogenerator wearable wireless sensing self-powered

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Ridge Gap Waveguide Slot Antenna Array with Ultra-Low Sidelobe Level for Millimeter-Wave Automotive Radar Applications

Ridge Gap Waveguide Slot Antenna Array with Ultra-Low Sidelo...

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Qi Zhao Kuikui Fan Guo Qing Luo The Key Laboratory of RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

In this paper, a ridge gap waveguide (RGW) slot array antenna is proposed for 77GHz automotive radar applications. By adjusting the size of the radiation slot, the antenna achieves an ultra-low sidelobe level (SLL) characteristic in H-plane. The unequal power divider with high power ratio is realized by using the structure of discontinuous ridge. The weak coupling approach is used to design the feeding network where the output ports are large power ratios and small phase differences to achieve the ultra-low SLL characteristics of the antenna E-plane. The antenna has a reflection coefficient better than -lOdB in the 77-79.3GHz frequency band, and the gain is greater than 22 dBi. The simulated SLLs for both E-plane and H- plane is less than -27 dB in the operating band. The ultra-low SLL antenna array has great application potential in millimeter wave long-range automobile radar system.

关键词： Slot antennas Simulation Gap waveguide Millimeter wave radar Radar antennas Reflector antennas Microwave antenna arrays

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