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Darwin:a neuromorphic hardware co-processor based on Spiking Neural Networks

Science China(Information Sciences) 2016年第2期59卷 232-236页

作者： Juncheng SHEN De MA Zonghua GU Ming ZHANG Xiaolei ZHU Xiaoqiang XU Qi XU Yangjing SHEN Gang PAN College of Computer Science Zhejiang University Institute of VLSI Design Zhejiang University Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University

Broadly speaking, the goal of neuromorphic engineering is to build computer systems that mimic the brain. Spiking Neural Network(SNN) is a type of biologically-inspired neural networks that perform information processing based on discrete-time spikes, different from traditional Artificial Neural Network(ANN).Hardware implementation of SNNs is necessary for achieving high-performance and low-power. We present the Darwin Neural Processing Unit(NPU), a neuromorphic hardware co-processor based on SNN implemented with digitallogic, supporting a maximum of 2048 neurons, 20482= 4194304 synapses, and 15 possible synaptic *** Darwin NPU was fabricated by standard 180 nm CMOS technology with an area size of 5 × 5 mm2and70 MHz clock frequency at the worst case. It consumes 0.84 m W/MHz with 1.8 V power supply for typical applications. Two prototype applications are used to demonstrate the performance and efficiency of the hardware implementation.

关键词： neuromorphic computing Spiking Neural Networks(SNN) digital VLSI

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Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution

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Chinese Physics B 2016年第7期25卷 164-170页

作者：张钰逯鑫淼王光义胡永才徐江涛 Key Laboratory for RF Circuits and Systems (Hangzhou Dianzi University) Ministry of Education Institute of Electronics and Information Hangzhou Dianzi University School of Electronics and Information Engineering Tianjin University

The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.

关键词： random telegraph signal noise physical and statistical model binomial distribution CMOS image sensor

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A D-Band Monolithic Doubler in 70nm GaAs mHEMT Process

A D-Band Monolithic Doubler in 70nm GaAs mHEMT Process

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2017 17th IEEE International Conference on Communication Technology (ICCT 2017)

作者： Jincai Wen Lingling Sun Long Wang Ting Wu Jun Liu Institute of VLSI Design Zhejiang University HangzhouChina Key Laboratory of RF Cir.&Sys. Ministry of EducationHangzhou Dianzi University Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University

A D-band monolithic doubler is presented in a 70 nm GaA s mH EMT process. The circuit consists of a frequency doubling stage for second harmonic signal and an output amplifier stage. Coplanar waveguide（CPW） transmission lines and MIM capacitors are used to achieve impedance matching of the fundamental input and second harmonic output, and fundamental suppression with reduced area. The test results show that the doubler can achieve maximum conversion gain of 0 dB from 122 GHz to 140 GHz band, and the compact chip area with pads is 0.54 mm.

关键词： mHEMT doubler monolithic microwave integrated circuit(MMIC) D-band

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Analysis of the area efficient transmission gate power clamp in 65nm CMOS process 13

Analysis of the area efficient transmission gate power clamp...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Cai Xiaowu Wei Junxiu Liang Chao Gao Zhe Lv Chuan Yan Ming Lv Kai Light Industry College Liaoning University Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University

ISBN: (纸本)9781467397209

an area efficient clamp is presented and validated in65 nm low leakage CMOS process. With this novel design, only a very short time constant RC timer is required for triggering and keeping the clamp turning on for shunting the ESD *** the leakage is greatly reduced in normal operation because of the small capacitor. Robust ESD protection capability and no risk of power on mis-triggering problems are also studied in the paper.

关键词： Area efficient clamp ESD protection RC time constant transmission gate

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A 140 GHz Common-Base Cross-Coupled VCO with feedback inductor in InP HBT Technology

A 140 GHz Common-Base Cross-Coupled VCO with feedback induct...

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IEEE Asia-Pacific Conference on Antennas and Propagation

作者： Rui Lin Jun Liu Guodong Su Wenjie Jiang Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University

ISBN: (纸本)9781538616093

A 140 GHz voltage-controlled Oscillator (VCO) based on InP heterojunction bipolar transistor (HBT) technology is presented in this paper. This VCO is designed by using common-base (CB) cross-coupled topology, in comparison with the conventional common-emitter (CE) cross-coupled topology, the proposed one can provide a higher oscillation frequency. The feedback inductor is proposed and used at the base of CB cross-coupled transistors for the first time to improve its negative resistance, which also simplifies the start-up condition in this work. The oscillation frequency of the VCO is range from 137.4 GHz to 141.2 GHz, and the output rf power is greater than -1 dBm in it's overall frequency range. The size of layout area is 0.31mm2. The phase noise of this VCO is -99.91dBc/Hz at 10MHz offset. The cross-coupled transistors pair draws 12.6 mA at 1.45 V supply, and the buffer draws 12.1mA current from a 3V supply.

关键词： Voltage-controlled oscillators Frequency control Time-frequency analysis Topology Heterojunction bipolar transistors Inductors

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A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch

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Journal of Semiconductors 2016年第1期37卷 88-91页

作者：郑宗华孙玲玲刘军张胜洲 Institute of VLSI Design Zhejiang University Hangzhou 310027 China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi UniversityHangzhou 310037 China

A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30--65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps 〈 4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30--64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5 × 0.95 mm2.

关键词： feed-forward compensation series-shunt single-pole double-throw （SPDT） switch CMOS

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A label-free and non-invasive CMOS sub-THz plasmonic sensor for circulating tumor cell detection

A label-free and non-invasive CMOS sub-THz plasmonic sensor ...

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IEEE MTT-S International Microwave Bio Conference ((IMBIOC)

作者： Xiaojian Fu Guodong Su Anak Agung Alit Apriyana Guangyin Feng Ling-ling Sun Hao Yu School of Electrical and Electronic Engineering Nanyang Technological University Singapore Key Laboratory of RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China Nanyang Technological University Singapore Singapore SG

ISBN: (纸本)9781538617144

This paper presents a label-free and non-invasive plasmonic sensor based on electrical cell impedance detection at sub-THz. The plasmonic sensor implemented by split-ring resonator (SRR) with different topologies is investigated in standard 65-nm CMOS process: differential T-line loaded SRR; stacked TEM-mode SRR and stacked TM-mode SRR. It is shown that sensor array with SRR has high sensitivity to detect the frequency shift between water and circulating tumor cells (CTCs) due to the difference in permittivity, especially for the surface-wave based TM-mode SRR. Moreover, oscillator with a voltage output is designed based on TEM-mode SRR, which is observed with a high voltage sensitivity of 15.4 mV/fF in distinguishing CTC solutions with various concentrations. Therefore, the plasmonic sensor proposed in this work is beneficial to monitor the tumor growth.

关键词： Plasmons Resonant frequency Oscillators Q-factor Surface impedance Sensitivity Tumors

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Europium luminescence from amorphous yttrium alumina films on fused silica substrates

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IOP Conference Series: Materials Science and Engineering 2019年第1期475卷

作者： J C Villegas Brito N V Gaponenko K S Sukalin T F Raichenok S A Tikhomorov Xiang Wang Zhiqun Cheng N I Kargin Belarusian State University of Informatics and Radioelectronics P. Browki St. 6 220013 Minsk Belarus National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) Kashirskoe Shosse 31 115409 Moscow Russian Federation Stepanov Institute of Physics NASB Nezavisimosti ave. 68 220072 Minsk Belarus. Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University 310018 Hangzhou China

In this work, we investigate photoluminescence of sol-gel derived films corresponding to yttrium alumina garnet Y3Al5O12 doped with trivalent europium. The films with three concentrations of europium 0,02; 0,025; 0,03 M with the thickness 210-220 nm were deposited on fused silica substrates by the corresponding sols' spinning followed by drying and high temperature annealing at 1000 °C for 30 min. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis as well as ellipsometry, photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). All of the fabricated samples were amorphous and revealed room-temperature luminescence bands within the range of 550 – 750 nm corresponding to 5D0 → 7Fj (j = 0,..,4) transitions of trivalent europium ions with the most intensive bands at 610 – 630 nm and 680 – 710 nm. The intensity of europium luminescence increases with europium concentration. The photoluminescence excitation spectra measured at the emission wavelength 710 nm exhibit strong bands at 220 nm, which could be associated with absorption of exciting light within Eu3 + - O2 -bands. Practical application of the obtained films transforming ultraviolet irradiation into visible is discussed.

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Analytical surface potential based model for AlxGa1−xN/AlyGa1−yN/GaN DH HEMTs

Analytical surface potential based model for AlxGa1−xN/AlyG...

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Jie Wang Haiyan Lu LingLing Sun Jun Liu Haijun Gao Mingzhu Zhou Nation Key Laboratory of Science and Technology on Circuits and Module Nanjing China Key Laboratory of RF Circuits and Systems Hangzhou Dianzi University Hangzhou China

We present an accurate and robust surface potential based compact model for Al x Ga 1-x N/Al y Ga 1-y N/GaN double hetero-junction high electron mobility transistors (DH HEMTs). The effects of band on the carrier distribution and polarization charges are studied in our model, which are characterized by the surface potential equation. An accurate analytical surface potential calculation is used to develop the current and charge model. The model reproduces the camel hump phenomenon of the DH HEMT device and is verified against TCAD simulations under a wide range of bias conditions.

关键词： Mathematical model Semiconductor process modeling Integrated circuit modeling DH-HEMTs Gallium nitride Analytical models

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Metamaterials: Giant Asymmetric Radiation from an Ultrathin Bianisotropic Metamaterial (Adv. Sci. 7/2018)

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Advanced Science 2018年第7期5卷 1870042-1870042页

作者： Liang Peng Kewen Wang Yihao Yang Yuntian Chen Gaofeng Wang Baile Zhang Hongsheng Chen Key Laboratory for RF Circuits and Systems Hangzhou Dianzi University Ministry of Education Hangzhou 310018 China State Key Laboratory of Modern Optical Instrumentation Zhejiang University Hangzhou 310027 China School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore

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