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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)

作者： Shijun Tong Weiliang Yu Guo Qing Luo Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9798331533922

ISBN: (纸本)9798331533939

In this paper, a novel low-profile transmitarray antenna with high selective gain filtering performance is proposed. The proposed transmitarray unit cell is comprised of a magneto-electric (ME) dipole and a split-ring resonator. The ME dipole provides radiation zero at low frequency, and the splitring resonator provides radiation zero at high frequency. The transmission phase of 0° and 180° can be realized by rotating the bottom feed structure in the radiation band. The thickness of the transmitarray unit cell is 3.1mm (0.106λ). Based on the unit cell, a circular transmitarray antenna with a center frequency of 10.3GHz and a diameter of 221.2mm $(7.6\lambda)$ is designed. The simulation result shows that the transmitarray achieves a 3dB gain bandwidth of 12.3%, the highest gain is 20.07dBi, the suppression level at low and high frequencies are 27.4dB and 17.7dB, respectively. And the calculated selectivity is 0.86. A high selectivity and low profile is implemented.

关键词： Microwave antennas Wireless communication Dipole antennas Filtering Simulation Transmitting antennas Resonant frequency Bandwidth High frequency Microwave propagation

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A Dual-Band Dual-Polarized Antenna With High Aperture Reuse Efficiency and Large Frequency Ratio for Modern Wireless Communications

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IEEE Antennas and Wireless Propagation Letters 2024年第1期23卷 14-18页

作者： Zhao, Yue Ge, Lei Gu, Hui Chen, Shi Chang Chung, Ming-An Shenzhen University State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen518060 China Shenzhen University College of Electronics and Information Engineering Shenzhen518060 China Hangzhou Dianzi University Key Laboratory of Rf Circuits and Systems of the Ministry of Education of China Microelectronic Cad Center Hangzhou310018 China National Taipei University of Technology Department of Electronic Engineering Taipei10608 Taiwan

In this letter, a microwave dense dielectric patch antenna and a millimeter-wave (MMW) Fabry-Perot cavity (FPC) antenna are first combined to implement a dual-band dual-polarized antenna with high aperture reuse efficiency and large frequency ratio. In the proposed design, a piece of high-permittivity dielectric and a metallic patch are adopted as not only the radiators of the microwave antenna but also the partially reflective surface and ground plane of the MMW FPC. Furthermore, for performance improvement, the high-permittivity dielectric is sharpened to widen the FPC gain bandwidth, a neutralization line is used to enhance the polarization isolation, and two small capacitive disks are employed to improve the channel isolation. As a demonstration, the proposed antenna is designed at 3.5 and 27 GHz. A prototype is fabricated and achieves 20% bandwidth (VSWR 30 dB) with 8 dBi gain in the low band, 22% bandwidth (VSWR24 dB) with 19.9 dBi gain in the high band, and channel isolation higher than 40 dB. © 2002-2011 IEEE.

关键词： Microwave antennas

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Quad-Band Bandpass Filter Based on Asymmetric Stepped Impedance Resonators and Asymmetric Open Stub Loaded Resonators 9

Quad-Band Bandpass Filter Based on Asymmetric Stepped Impeda...

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9th IEEE MTT-S International Wireless Symposium, IWS 2022

作者： Li, Miao Lil, Jing Su, Guo-Dong Sun, Ling-Ling Hangzhou Dianzi University Key Laboratory of Rf Circuits and Systems Zhejiang Hangzhou310018 China State Key Laboratory of Millimeter Waves Jiangsu Nanjing210096 China

ISBN: (数字)9781665481977

ISBN: (纸本)9781665481977

This paper presents a qand-band bandpass filter operating in the microwave frequency band based on stepped impedance resonators (SIRs) and open stub-loaded resonators (SLRs). In order to improve the passband selectivity of the filter, the filter adopts the capacitive source-load coupling structure, which produces multiple transmission zeros. The asymmetric SLRs are designed to generate three passbands and the asymmetrical SIRs are designed to produce the fourth passband. All of these four passbands of the filter are flexibly adjustable. The asymmetric SLRs with open circuit stub,which has bending and folding structure, are adopted to realize the miniaturization of the filter and broaden the tuning range. The measurement results show that the optimal insertion loss is 2.14 dB. The actual area of the quad-band bandpass filter is only 0.35λg1 ×0.25λg1. © 2022 IEEE.

关键词： Bandpass filters

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Improved 4H-SiC UMOSFET with super-junction shield region

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Chinese Physics B 2021年第5期30卷 694-700页

作者： Pei Shen Ying Wang Xing-Ji Li Jian-Qun Yang Cheng-Hao Yu Fei Cao Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi UniversityHangzhou 310018China National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment Harbin Institute of TechnologyHarbin 150080China

This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor(MOSFET)(UMOSFET)fitted with a super-junction(SJ)shielded *** modified structure is composed of two n-type conductive pillars,three p-type conductive pillars,an oxide trench under the gate,and a light n-type current spreading layer(NCSL)under the *** n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer,thus improving the specific on-resistance(R_(on,sp)).There are three p-type pillars in the modified structure,with the p-type pillars on both sides playing the same *** p-type conductive pillars relieve the electric field(E-field)in the corner of the trench ***-dimensional simulation(silvaco TCAD)indicates that Ron,sp of the modified structure,and breakdown voltage(V_(BR))are improved by 22.2%and 21.1%respectively,while the maximum figure of merit(FOM=V_(BR)^(2)/R_(on,sp)) is improved by 79.0%.Furthermore,the improved structure achieves a light smaller low gate-to-drain charge(Q_(gd))and when compared with the conventional UMOSFET(conventional-UMOS),it displays great advantages for reducing the switching energy *** advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance,which also enables the charge carriers to be extracted *** the end,under the condition of the same total charge quantity,the simulation comparison of gate charge and OFF-state characteristics between Gaussdoped structure and uniform-doped structure shows that Gauss-doped structure increases the V_(BR)of the device without degradation of dynamic performance.

关键词： breakdown voltage specific on-resistance silicon carbide switching energy loss super-junction(SJ) trench gate MOSFET

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Millimeter-wave bandpass filter for 5G-N257 band based on thin-film IPD process 15

Millimeter-wave bandpass filter for 5G-N257 band based on th...

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15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023

作者： Ge, Zeye You, Bin Wen, Xuan Hangzhou Dianzi University The Key Laboratory of Rf Circuits and Systems of Ministry of Education Microelectronics Cad Center College of Electronics and Information Hangzhou China Hangzhou Dianzi University The School of Information Engineering Hangzhou China

ISBN: (纸本)9798350338874

This letter presents the design of a millimeter-wave bandpass microstrip filter for 5G, using a thin-film integrated passive device (IPD) process, in accordance with the principles of microwave theory and technique. The proposed filter features a double-layer microstrip structure, which enables coverage of the 5G n257 frequency band. By incorporating metal-insulator-metal (MIM) capacitors through the overlap of the upper and lower metal layers, the filter size is effectively reduced. Hybrid coupling between two resonators is introduced to generate two transmission zeros, resulting in a second-order bandpass filter. The proposed microstrip millimeter-wave fil ter achieves miniaturization while ensuring excellent performance. Moreover, the center frequency and bandwidth of the passband can be flexibly designed by adjusting the overlap area between the upper and lower layers and the coupling line. In this study, a 5G millimeter-wave bandpass filter is designed with a center frequency of 28 GHz, a 3 dB bandwidth of 10.7%, and an insertion loss of 2.11, demonstrating the effectiveness of the proposed approach. © 2023 IEEE.

关键词： Millimeter waves

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Miniaturized W-band Bandpass Filter Using IPD Technology

Miniaturized W-band Bandpass Filter Using IPD Technology

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2023 IEEE MTT-S International Wireless Symposium, IWS 2023

作者： Pan, Dongzhe You, Bin Wen, Xuan College of Electronics and Information Hangzhou Dianzi University The Key Laboratory of Rf Circuits and Systems of Ministry of Education Microelectronics Cad Center Hangzhou China The School of Information Engineering Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9798350336535

This work presents the design of a four-order bandpass filter (BPF) for W-band applications using integrated passive device (IPD) technology. A coupling architecture with three configurable transmission zeros is employed to improve the passband selectivity. Additionally, combining folded stub loaded resonators (SLRs) and stacking resonators vertically reduces the overall foot-print of the circuit. The simulation results show that the suggested BPF, which operates at 95 GHz, has a number of benefits including low insertion loss, excellent selectivity, small size, and convenient to be integrated. The compact size and easy integration of the proposed BPF render it a compelling option for upcoming wireless communication systems. © 2023 IEEE.

关键词： Bandpass filters

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A Real-time Waveform Load-Pull Technique Enabling the Access to rf PA Ruggedness

A Real-time Waveform Load-Pull Technique Enabling the Access...

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2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2021

作者： Zhao, Siyuan Pan, Tao Su, Jiangtao Ministry of Education Key Laboratory of Rf Circuits and Systems Hangzhou310018 China

ISBN: (纸本)9781665418287

Load mismatch becomes an urgent issue to be resolved in the design of rf PA circuit with the fast development of wireless communication technology. In this paper, we proposed a real-time waveform load pull technique for rf PA ruggedness test, which can be used for both fundamental and harmonic load mismatch and deliver accurate output waveforms. This technique has many advantages versus traditional passive load pull based techniques. Through rigorous experimental verification, it is proved that this technique is capable of providing comprehensive and meaningful information for the rf circuit Electro-Magnetic safety analysis and design. © 2021 IEEE.

关键词： Electro-Magnetic Load mismatch Load Pull Output Waveforms rf PA

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A 4-9 GHz LNA With Out-of-Band Gain Rejection Method

A 4-9 GHz LNA With Out-of-Band Gain Rejection Method

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UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT)

作者： Dengbao Sun Xiang Wang Yonkang Huang Guodong Su Jun Liu Key Laboratory for RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China

This paper proposed a 4-9GHz Low noise amplifier (LNA) which is based on 0.25-μm GaAs pHEMT process. The proposed LNA adopts a method to achieve better out-of-band gain rejection performance. This method is realized by adjusting the reactance characteristic of the inductor used in the matching network. The post-layout simulation results show that the 3dB bandwidth is 2.9-10.6GHz. In the design band (4-9GHz), the gain is of 26.5±0.4 dB, the noise figure is of 0.91 ~ 1.22 dB, and the output P -1dB is of 13.7 ~ 17 dBm respectively. The proposed LNA has a compact chip size of only 1.44 mm 2 , including all DC and rf pads.

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Ultrathin Broadband Circuit Analog Absorber by Using Parasitic Arc-Shaped Line

Ultrathin Broadband Circuit Analog Absorber by Using Parasit...

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Yi Du Weiliang Yu Guo Qing Luo Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

An ultrathin broadband circuit analog absorber (CAA) is proposed by using parasitic arc-shaped lines in this paper. It consists of a lossy layer printed on an FR4 substrate, an air spacer layer and a metal plane. The lossy layer is composed of a circular ring loaded with four lumped resistors and six groups of arc-shaped lines. Simulated results show that the proposed absorber achieves a wide absorption band (╷S11╷<-10dB) with a fractional bandwidth of 92.2%, ranging from 5.59GHz to 15.16GHz under normal incidence. Moreover, the total thickness of the proposed absorber is only 0.083λ L and the ratio of PI is up to 91.2%. The simulated reflection coefficients of the absorber under the oblique incidence is up to 30°. The proposed CAA has potential application in the field of electromagnetic interference.

关键词： Resistors Electric potential Absorption Electromagnetic interference Bandwidth Stability analysis Broadband communication

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Dual-Polarized Absorptive Frequency-Selective Structure Based on Circular Interdigital Resonator

Dual-Polarized Absorptive Frequency-Selective Structure Base...

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Xiao Hong Zhang Yuchang Chen Weiliang Yu Guo Qing Luo Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper proposes a dual-polarized absorptive frequency selective structure (AFSS) based on a novel lossy layer with circular interdigital resonator (CIR). The whole structure includes a lossy layer, an air spacer, and a 2-order bandpass FSS. The proposed CIR is composed of a basic inter digital structure rotating one cycle, which is conducive to adjusting the resonant frequency and has the advantages of coplanarity and bipolarization. The “patch-slot-patch” 2-order FSS provides a high selectivity wide pass band within reflection band. The proposed AFSS achieves an operation band of fractional bandwidth of 99% and an angular stability of 30°.

关键词： Microwave antennas Microwave technology Microwave integrated circuits Millimeter wave technology Resonant frequency Bandwidth Reflection

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