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Frequency stability of InP HBT over 0.2 to 220 GHz

Journal of Semiconductors 2015年第2期36卷 77-81页

作者：周之蒋任坤刘军程伟陆海燕孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute

The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

关键词： double heterojunction bipolar transistor （DHBT） small-signal model stability factor

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Investigation of temperature-dependent small-signal performances of TB SOI MOSFETs

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Journal of Semiconductors 2017年第4期38卷 58-62页

作者： Yuping Huang Jun Liu Kai Lü Jing Chen Key Laboratory tbr RF Circuits and Systems(Hangzhou Dianzi University) Ministry of EducationHangzhou 310018China

This paper investigated the temperature dependence of the cryogenic small-signal ac performances of multi-finger partially depleted（PD） silicon-on-insulator（SOI） metal oxide semiconductor field effect transistors（MOSFETs）,with T-gate body contact（TB） *** measurement results show that the cut-off frequency increases from 78 GHz at 300 K to 120 GHz at 77 K and the maximum oscillation frequency increases from 54 GHz at 300 K to 80 GHz at 77 K,and these are mainly due to the effect of negative temperature dependence of threshold voltage and *** using a simple equivalent circuit model,the temperature-dependent small-signal parameters are discussed in *** understanding of cryogenic small-signal performance is beneficial to develop the PD SOI MOSFETs integrated circuits for ultra-low temperature applications.

关键词： cryogenic small-signal AC performance PD SOI MOSFETs

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Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT

Agilent HBT model extraction and circuit verification for In...

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2008 11th IEEE International Conference on Communication Technology, ICCT 2008

作者： Han, Jian Sun, Ling-Ling Liu, Jun Wen, Jin-Cai Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781424422517

Agilent HBT model parameters are extracted from the multi-finger InGaP/GaAs HBT fabricated in 2 urn process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05GHz, this model is suitable for simulating InGaP/GaAs HBT AC small -signal characterization. Using this model to verify a broadband amplifier, the result shows good agreement between simulated and measured data. © 2008 IEEE.

关键词： Broadband amplifiers

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Low-Profile Transmitarray Antenna with High Selective Gain Filtering Characteristic 10

Low-Profile Transmitarray Antenna with High Selective Gain F...

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10th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2024

作者： Tong, Shijun Yu, Weiliang Luo, Guo Qing Ministry of Education Hangzhou Dianzi University Key Laboratory of RF Circuits and Systems Hangzhou China

ISBN: (纸本)9798331533922

In this paper, a novel low-profile transmitarray antenna with high selective gain filtering performance is proposed. The proposed transmitarray unit cell is comprised of a magneto-electric (ME) dipole and a split-ring resonator. The ME dipole provides radiation zero at low frequency, and the splitring resonator provides radiation zero at high frequency. The transmission phase of 0° and 180° can be realized by rotating the bottom feed structure in the radiation band. The thickness of the transmitarray unit cell is 3.1mm (0.106λ). Based on the unit cell, a circular transmitarray antenna with a center frequency of 10.3GHz and a diameter of 221.2mm (7.6λ) is designed. The simulation result shows that the transmitarray achieves a 3dB gain bandwidth of 12.3%, the highest gain is 20.07dBi, the suppression level at low and high frequencies are 27.4dB and 17.7dB, respectively. And the calculated selectivity is 0.86. A high selectivity and low profile is implemented. © 2024 IEEE.

关键词： Dipole antennas

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An investigation of the DC and rf performance of InP DHBTs transferred to rf CMOS wafer substrate

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Journal of Semiconductors 2018年第5期39卷 54-58页

作者： Kun Ren Jiachen Zheng Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi UniversityHangzhou 310018China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016China

This paper investigated the DC and rf performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to rf CMOS wafer *** measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,*** order to have a detailed insight on the degradation of the rf performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably *** extracted results show that the degradation of the rf performance of the device transferred to rf CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.

关键词： CMOS technology amplifier integrated circuits

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Analysis of the area efficient transmission gate power clamp in 65nm CMOS process 13

Analysis of the area efficient transmission gate power clamp...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Cai Xiaowu Wei Junxiu Liang Chao Gao Zhe Lv Chuan Yan Ming Lv Kai Light Industry College Liaoning University Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University

ISBN: (纸本)9781467397209

an area efficient clamp is presented and validated in65 nm low leakage CMOS process. With this novel design, only a very short time constant RC timer is required for triggering and keeping the clamp turning on for shunting the ESD *** the leakage is greatly reduced in normal operation because of the small capacitor. Robust ESD protection capability and no risk of power on mis-triggering problems are also studied in the paper.

关键词： Area efficient clamp ESD protection RC time constant transmission gate

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Simulation Study of Single-Event Burnout for the 4H-SiC VDMOSFET with N+ Split Source 2

Simulation Study of Single-Event Burnout for the 4H-SiC VDMO...

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2021 2nd International Conference on Physics and Engineering Mathematics, ICPEM 2021

作者： Zhou, Jiancheng Yu, Chenghao Wang, Ying Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dian zi University Hangzhou China

Silicon Carbide (SiC) power MOSFET is the next generation device in the supply system of spacecraft. However, the current degradation or catastrophic failure of the power device could be induced when a drain voltage exceeds critical condition. In this article, an improved VDMOSFET structure for the Single-Event Burnout (SEB) is demonstrated. The improved power VDMOSFET includes a P+ shielding region at the JFET region. Meanwhile, forming a CSL layer by ion-implantation at the JFET to reduce the specific on-resistance. The device is etched in both sides to form trench and then implanting N-type impurities at the side walls of the trench to form the N+ split source (SDS-VDMOSFET). The 2-D numerical simulator Silvaco Atlas was used to study the SEB performance for the 1.2 kV-rated SiC SDS-VDMOSFET in a high linear energy transfer (LET) value of 0.5 pC/μm. The simulation results show that the improved structure can effectively reduce the peak lattice temperature induced by heavy-ion and increase the SEB threshold voltage compared with the standard VDMOSFET. Furthermore, the improved structure also presents a lower specific on-resistance. As a result, the maximum temperature of the standard VDMOSFET has exceeded 3000 K at a drain voltage of 400 V. However, the maximum temperature of the improved VDMOSFET is only 2090 K at a drain voltage of 800 V. © Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

关键词： Heavy ions

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A 10W broadband power amplifier for base station

A 10W broadband power amplifier for base station

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2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012

作者： Dai, Dajie Sun, Lingling Wen, Jincai Su, Guodong Guo, Lui Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou 310018 China

ISBN: (纸本)9781467321839

This paper presents the design of a broadband power amplifier with high-efficiency using silicon LDMOSFETs. With comparing frequency response of single LC matching network and two-stage one, a multiple LC matching networks composed of micro-strip lines and capacitors were adopted to enhance the bandwidth. A broadband power amplifier was implemented based on a packaged Si-LDMOS power transistor, and a saturated output power of 15 W and power gain of 14.5 dB at 1-dB compression point with maximum power-added efficiency (PAE) of 50% are demonstrated from 1.8GHz to 2.0GHz in this work. © 2012 IEEE.

关键词： Broadband amplifiers

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An accurate surface-potential based large-signal model for HEMTs

An accurate surface-potential based large-signal model for H...

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2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012

作者： Liu, Jun Yu, Zhiping Sun, Lingling Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou310037 China

ISBN: (纸本)9780615717562

An accurate surface-potential based large-signal model for compound semiconductor HEMTs is presented. A novel effective gate voltage model is introduced into the derivation of the model core. The method enables a directly application of the standard results from traditional surface-potential theory. As the symmetric linearization technique that used in surface-potential based MOSFET models is also inherited, the Gummel symmetry of an InGaAs/GaAs pHEMT is accurately characterized with the new model. The high-order derivatives of I-V/Q-V remain continuous, making the model suitable for rf large-signal applications. The method and modeling techniques have been verified through comparison with measured DC IV, CV and single-tone input power sweep at 29GHz for a 2×10μm×0.1μm InGaAs/GaAs power pHEMT, fabricated at a commercial foundry. © 2012 IEEE.

关键词： High electron mobility transistors

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Scalable modeling based on fill ratio for planar spiral inductors

Scalable modeling based on fill ratio for planar spiral indu...

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2011 International Symposium on Integrated circuits, ISIC 2011

作者： Zhong, Lin Sun, Lingling Liu, Jun Wang, Huang Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou 310037 China

ISBN: (纸本)9781612848648

This paper presents a scalable model based on the fill ratio with an enhanced 1-π topology for on-chip spiral inductor. Usually, scalable modeling requires so many parameters such as the width, the turn spacing, number of turns and inner radius. To reduce the number of variables and coefficients in the scalable rules, this work utilizes fill ratio to represent geometry properties of an inductor and all the equations for the elements in the topology have simple form. The proposed scalable model is further verified by a set of spiral inductors fabricated by using 0.18-μm 1P6M rf CMOS technology. © 2011 IEEE.

关键词： Topology

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