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2019第十一届数字图像处理国际会议

作者： Jiannan Fang Lingling Sun Yaqi Wang Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi University

In recent years,Visual Question Answering（VisualQA） has gradually become one of the research hotspots of video understanding,but most of the researches are mainly focused on Image Question Answering（ImageQA）,while fewer researches pay attention to Video Question Answering（VideoQA）.Inspired by the ImageQA model,we propose a model,which utilizes videos and questions to generate *** also redesign and simplify the Joint Sequence Fusion（JSFusion） model for our soft-attention mechanism called Frame Attention which can refines its attention on the frame object with the help of *** Attention first fused the multi-modal features by the Hadamard product,and then generated attention probability by *** addition,a new training strategy for the ZJL dataset is also proposed,and can take full advantage of all the answers of the questions for *** show the advantages of our model and accuracy of 0.509 is achieved.

关键词： Deep Learning Attention Mechanism Video Question Answering

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Classification of Blood Cancer Images Using a Convolutional Neural Networks Ensemble

Classification of Blood Cancer Images Using a Convolutional ...

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2019第十一届数字图像处理国际会议

作者： Kaiqiang Ma Lingling Sun Yaqi Wang Junchao Wang Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University

This paper presents the method of our submission to the ISBI 2019 Challenge for the task of classification of normal versus malignant cells in B-ALL white blood cancer microscopic *** aimed to combine convolutional neural networks with several state-of-the-art ***,we fine-tuned pretrained deep learning networks including Res Net and DenseNet for this *** is one of the major problems for this *** solve overfitting by using the gradient norm clipping and the cosine annealing learning rate schedule with restarts,which have a significant impact on the performance of our deep neural *** importantly,adaptive pooling layer is used in our *** this modification,models are able to adapt to images of any *** ensemble of deep models achieved a 0.8570 weighted-f1 score on the preliminary test set reported by the test server.

关键词： Convolutional Neural Networks Data augmentation Adaptive pooling Cosine annealing Gradient clipping

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37-42.5 GHz Sixth-Order Symmetric Substrate Integrated Waveguide Bandpass Filter

37-42.5 GHz Sixth-Order Symmetric Substrate Integrated Waveg...

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International Symposium on Antennas and Propagation (ISAP)

作者： Kaixuan Pang Guodong Su Hong Xu Zeqi Qiu Lingling Sun Key Laboratory of RF Circuits and Systems Hangzhou Dianzi University Hangzhou China

A sixth-order symmetric Chebyshev bandpass filter applied to the 5G mobile networks is proposed in this paper. The presented BPF based the substrate integrated waveguide (SIW) has low insertion loss, low cost and high selectivity. The even-order Chebyshev polynomial is modified and adopted to analysis the design of the this presented filter. This filter is designed by using a single-layer Rogers RT/Duroid 5880 substrate with thickness of 0.254mm. The area of the presented BPF is 33.36mm ×5mm. The simulation results show that the return loss is better than 13 dB, the insertion loss is lower than 0.6 dB, the out-of-band rejection is better than 30 dB in the interval below 35.8GHz and above 46.9GHz. The results show that the proposed even-order Chebyshev polynomial is correct.

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A 37–42 GHz Continuous Tunable Phase Shifter in 150 nm GaAs pHEMT

A 37–42 GHz Continuous Tunable Phase Shifter in 150 nm GaAs...

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UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT)

作者： Zeqi Qiu Jun Liu Hong Xu Guodong Su Lingling Sun Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728129938

ISBN: (纸本)9781728129945

A continuous tunable low loss phase shifter with a relative phase shift range of 360° is presented in this paper. This phase shifter consists 3-bit digital phase shifter cell and a 45° continuous tunable analog phase shifter cell. A SPDT switch is used to switch the signal path. The composite right/left hand transmission line is employed in analog phase shifter cell to achieve the low path loss and the compact layout. The proposed phase shifter is implemented with 0.15 um GaAs pHEMT process. The maximum power consumption of the phase shifter is 63 mW with a 2.5 V supply voltage. The post layout simulation shows that the phase shifter achieves 360° phase shift, and the phase error is better than 2.62° of the 3-bit digital phase shifter and the loss is better than -12.8 dB. The proposed phase shifter achieves an operating bandwidth of 37-42GHz which can be applied to the 5G communication.

关键词： Phase shifters 5G mobile communication Layout Switches Phased arrays Insertion loss Tuning

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An investigation of the DC and rf performance of InP DHBTs transferred to rf CMOS wafer substrate

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Journal of Semiconductors 2018年第5期39卷 54-58页

作者： Kun Ren Jiachen Zheng Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi UniversityHangzhou 310018China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016China

This paper investigated the DC and rf performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to rf CMOS wafer *** measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,*** order to have a detailed insight on the degradation of the rf performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably *** extracted results show that the degradation of the rf performance of the device transferred to rf CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.

关键词： CMOS technology amplifier integrated circuits

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A 80∼101GHz Amplifier in 65nm CMOS process 11

A 80∼101GHz Amplifier in 65nm CMOS process

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11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2018

作者： Su, Zemin Su, Guodong Liu, Xiandong Lei, Yuchao Su, Zeqi Qiu Jiangtao Sun, Lingling Key Laboratory for RF Circuits and Systems Hangzhou Dianzi University Ministry of Education Hangzhou310018 China

ISBN: (纸本)9781538674970

This paper presents an 80∼101GHz low-noise amplifier (LNA) with 65-nm CMOS process. The first stage of the proposed low noise amplifier employs a novel amplifier structure to improve the noise figure and gain, which consists of a cascode amplifier and a feedback loop. The other stages are employed the cascode amplifier with gain improvement technique to improve the gain. The simulation results show that the LNA can provide a gain of 17dB with a 3 dB bandwidth of 21 GHz. With 1.2-V power supply, the LNA consumes 24-mW power consumption. Furthermore, the LNA achieves minimum noise figure (NF) of 6.5 dB at 90 GHz and NF of 6.5∼8.0 dB within a 3 dB gain bandwidth. © 2018 IEEE.

关键词： Low noise amplifiers

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A 128.76-129.56 GHz Fundamental Voltage Control Oscillator in 65 nm CMOS

A 128.76-129.56 GHz Fundamental Voltage Control Oscillator i...

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UK, Europe, China Millimeter Waves and THz Technology Workshop (UCMMT)

作者： Guodong Su Kaixuan Pang Dirong Chen Haijun Gao Jiangtao Su Lingling Sun Institute of VLSI Design Zhejiang University Hangzhou China Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728129938

ISBN: (纸本)9781728129945

A 128.76GHz-129.56GHz fundamental voltage control oscillator (VCO) is presented in this paper. An improved transformer-coupled resonant tank that consists a transformer-based switch inductor and a differential varactor using the common-cathode structure is used to achieve the high quality factor of the differential varactor and improve the tuning range of this VCO. This VCO is fabricated on 65 nm CMOS process. It consumes 11.2 mW from a 1.4 V supply. The measurement results show that the tuning range is 0.8 GHz and the output power ranges from -11.8 dBm to -10.6 dBm.

关键词： Three-dimensional displays

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A MMIC GaN Power Amplifier Design for 5G Communication System

A MMIC GaN Power Amplifier Design for 5G Communication Syste...

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IEEE Advanced Information Management,Communicates,Electronic and Automation Control Conference (IMCEC)

作者： Haiou Li Jin Zhuo Yue Li Yingbo Liu Jie Li Zhiyuan Xie Tangyou Sun Fabi Zhang Qi Li Tao Fu Gongli Xiao Yonghe Chen Keqiang Yue Lingling Sun Guangxi Key Laboratory of Precison Navigation Technology and Application Guilin University of Electronic Technology Guilin China Key Laboratory for RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China

In this paper, a 3.3 GHz - 3.8 GHz Monolithic Microwave Integrated Circuit (MMIC) power amplifier (PA) using a 0.25μm GaN on SiC high electron mobility transistor (HEMT) technology for 5G communication system is proposed. The stabilization of the circuit structure is composed of parallel connection of a resistance and a capacitance which called RC stabilization circuits. Determination the optimal impedance matching using Load-Pull. This project measured results demonstrated that the average Pout of 18.12 dBm, an average large signal gain of 8.72 dB over frequency band with a great harmonic isolation that the second harmonic is -25.67 dBc@3.55 GHz and the third harmonic is -46.61 dBc@3.55 GHz. The power amplifier chip is integrated into a 1.0mm×2.6mm QFN package including rf pad.

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Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation

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Journal of Semiconductors 2018年第11期39卷 55-61页

作者： Panpan Tang Ying Wang Xiongfei Meng Sufen Cui College of Information and Communication Engineering Harbin Engineering University Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University ZTE Microelectronics Technology Co. LTD.

In this paper, the main content revolves round the on-state characteristics of the variation of a lateral width(VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific onresistance of the VLW LDMOS device, the simulation results are in good agreement with the analytical calculation results combined with device dimensions. This provides a theoretical basis for the design of devices in the future. Then the self-heating effect of the VLW structure with a silicon-on-oxide(SOI) substrate is compared with that of a silicon carbide(SiC) substrate by 3 D thermoelectric simulation. The electrical characteristic and temperature distribution indicate that taking into account the SiC as the substrate can mitigate the self-heating penalty effectively, alleviating the self heating effect and improving reliability.

关键词： SOI self-heating effect specific on-resistance LDMOS transistor

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Scalable AgilentHBT model for GaAs HBTs

Scalable AgilentHBT model for GaAs HBTs

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International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Zhiqiang Wang Zhongchao Xu Jie Liu Jun Liu Information Science Academy of CETC Beijing Nanjing Electronic Devices Institute Nanjing Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou

In this paper, a scalable large-signal AgilentHBT (AHBT) model for GaAs HBTs is presented. The model parameters can be scaled to describe devices of different physical dimension by using simple empirical equations, with all the variables in which being extracted directly from the measured data of various dimension. The correctness of the scalable model is further verified by four devices of different widths with good fitting between measured and simulated results on DC, CV, Ft and S parameters over the frequency range over 0.1-20 GHz. The good agreement offers a much wider range of options for optimizing high-speed circuits.

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