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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： He, Qilu Zhang, Xiangfeng Zhang, Li Xue Infrared Technology Co. Ltd. Shanghai201306 China Aviation Key Laboratory of Science and Technology on Infrared Detector Luoyang471099 China The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province Luoyang471099 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

With the continuous advancement of infrared jamming technology, the demand for dual-band anti-jamming detection systems is rising. In this study, an Ultraviolet detection chip for dual-band composite guidance systems was developed by creating a Schottky barrier through the deposition of a Platinum metal layer on the surface of Cadmium Sulfide semiconductor. The current-voltage characteristics of the Schottky diode were examined, and its electrical properties were optimized using an annealing process. After annealing, the zero-bias barrier heigt (∅b) and the ideality factor (n) were found to be 0.34 eV and 2.5, respectively. Additionally, a double-layer anti-reflective coating was grown using plasma-enhanced chemical vapor deposition, which increased the average transmittance of the target infrared band from 67.8% to 88.2%. © 2025 SPIE.

关键词： Plasma enhanced chemical vapor deposition

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Optimizing large optical contrast in Ge-Se-Te films via high-throughput method

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Progress in Natural science:Materials International 2025年第1期35卷 222-228页

作者： Qiqi Chen Guoxiang Wang Zijun Liu Yixiao Gao Chenjie Gu Tiefeng Xu Xiang Shen Yimin Chen Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province Advanced Technology Research InstituteNingbo University Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo Solartrum Co.Ltd.

Chalcogenide phase-change materials（PCMs） have attracted great attentions due to their potential applications in reconfigurable photonic devices. The Ge2Sb2Te5and GeTe PCMs exhibit significant difference in refractive index（Δn） between amorphous and crystalline states, but they suffer from high optical loss. The binary Sb2S3and Sb2Se3PCMs, however, show low optical loss but small Δn. This encourages us to develop the novel materials,which are desired to combine large Δn and low optical loss. Instead of traditional trial-and-error screening method, we here used an efficient high-throughput method to optimize the PCMs' candidates for reconfigurable photonic devices in Ge-Se-Te chalcogenides. The crystallization temperature and difference in optical bandgap were detected, and then the component of Ge25Se7Te68, which also exhibits ultralow optical loss of 1.2 × 10-6（in amorphous state） and large Δn of 1.32 at 1550 nm, was optimized. This Te-rich Ge-Se-Te film can be a candidate for the applications of programmable reconfigurable photonic circuits.

关键词： Chalcogenide phase-change films High-throughput Reconfigurable photonics Refractive index

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MoSe2/NbSe2 Van der Waals heterostructure with efficiently gate-tunable optoelectronic properties

MoSe2/NbSe2 Van der Waals heterostructure with efficiently g...

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2024 Applied Optics and Photonics China: Optical Sensing, Imaging technology, and Applications, AOPC 2024

作者： Li, Chunyu Wu, Zhiming Zhang, Chaoyi Peng, Silu Han, Jiayue He, Meiyu Dong, Xiang Gou, Jun Wang, Jun Jiang, Yadong School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Key Laboratory of Science and Technology on Infrared Detector Luoyang471099 China

ISBN: (数字)9781510687820

ISBN: (纸本)9781510687813

NbSe2, serving as a 2D metal electrode, has been proven to form a Schottky heterojunction with MoSe2 to realize a high-performance broadband photodetector. Here, we further investigated the effect of gate voltage on the optoelectronic characteristics of the device. The results revealed that NbSe2 exhibits a weak electrostatic screening effect similar to graphene, and due to the high-quality contact between the 2D metal and semiconductor, the rectification ratio of the device can be significantly modulated from 0.32 to 5.5×104. Regarding the photovoltaic response characteristics of the device, the gate voltage similarly achieves significant modulation of the short-circuit current (20 nA-1.6 μA), open-circuit voltage (0-0.32 V), maximum electrical power (0-210 nW). Furthermore, the response speed of the device is also influenced by the gate voltage. This work demonstrates that Schottky heterojunctions constructed based on 2D metals can achieve effective control of optoelectronic properties, and has encouraging prospects in the fields of optical communications, optical sensing, and imaging. © 2024 SPIE.

关键词： Van der Waals forces

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Enhanced efficiency of high-speed Si and Si-based PbSe MSM photodiodes with integrated photon-trapping holes at 800–1550 nm wavelengths

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Chinese Optics Letters 2024年第10期22卷 58-64页

作者： Lixin Liu Jun Gou Chunyu Li Jiayue Han Xiutao Yang Jin Chen Zijian Zhang Zheyuan Xie He Yu Zhiming Wu Jun Wang School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Key Laboratory of Science and Technology on Infrared Detector Luoyang 471099China

We theoretically and experimentally demonstrate a cylinder-shaped hole array with a small depth and an appropriate period integrated on a silicon-on-insulator substrate can enhance infrared absorption due to more bending of light and a higher back *** Si metal-semiconductor-metal(MSM)photodiode with an hole array,whose depth is 250 nm,exhibits a4-fold improved external quantum efficiency(EQE)of 81%,and an ultra-fast impulse response speed of 22 ps enabling a 3 d B bandwidth of up to 23.9 *** film with a thickness of 80 nm is integrated to broaden the response wavelength.A more than 500%EQE enhancement of the Si-based PbSe photodiode with 150-nm-deep photon-trapping holes is achieved at1550 nm compared to the device without hole structures.

关键词： Si photodiode photon-trapping holes MSM Si-based PbSe photodiode enhanced EQE

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Effects of different passivation and etching methods on the dark current of InAs/GaSb long-wave detectors 8

Effects of different passivation and etching methods on the ...

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8th Symposium on Novel Photoelectronic Detection technology and Applications

作者： Ji, Zhenming Zhu, Xubo He, Yingjie Cui, Ailiang Wei, Peng Lyu, Yanqiu Luoyang Optoelectro Technology Development Center Luoyang471099 China Aviation Key Laboratory of Science and Technology on Infrared Detector Luoyang471099 China The Engineering Center for Antimonide-Based Infrared Detector Research of Henan Province Luoyang471099 China

ISBN: (数字)9781510653122

ISBN: (纸本)9781510653115

The InAs/GaSb superlattice infrared detectors have attracted more and more attention due to they have the properties of adjustable energy band, high uniformity, low Auger recombination, tunneling current, and high quantum efficiency. At present, it is widely used in the preparation of long-wave infrared detectors. This paper studies the effects of different passivation methods on device performance. The dark current density of the device which uses silicon nitride film as the passivation layer can be reduced to 5.01×10-5A/cm2, and its maximum impedance can reach 421 O·cm2, then we used energy band theory to explain the reason for this phenomenon. We believe that the occurrence of this phenomenon is related to the wider band gap of nitride, because the wider forbidden band can suppress the generation of surface leakage current, thereby reducing the dark current density and improving the performance of the device. © 2022 SPIE

关键词： Passivation

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High-beam-quality single-frequency 10-mJ nanosecond fiber and a solid-state hybrid laser front-end system at a 1-kHz repetition rate

Optics Continuum

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Optics Continuum 2025年第4期4卷 915-923页

作者： Kong, Zhiwei Cheng, Tianxiang Zhao, Zhigang Liu, Zhaojun School of Information Science and Engineering Shandong University Qingdao266237 China Key Laboratory of Laser and Infrared System Ministry of Education Shandong University Qingdao266237 China Shandong Provincial Key Laboratory of Laser Technology and Application Shandong University Qingdao266237 China

A compact single-frequency nanosecond fiber & solid-state hybrid laser system at 1030 nm is presented. The seed source, a continuous wave distributed feedback (DFB) laser diode, was first externally modulated with a repetition rate of 1.5 MHz and a pulse duration of 10 ns, whose repetition rate was further lowered to 1 kHz by a pulse picker. Afterwards, three-stage end-pumped Yb:YAG crystal amplifiers were employed for energy scaling. Finally, an average power of 12 W was obtained with a repetition rate of 1 kHz and a linewidth of ∼180 MHz, corresponding to approximately four times the Fourier transform limit (FTL). The beam quality factor (M2) was measured to be 1.18 and 1.20 for the horizontal and vertical directions, respectively. In the future, this high-beam quality front-end laser will be used as the seed source for nanosecond disk laser amplifiers. © 2025 Optica Publishing Group.

关键词： Pulse repetition rate

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Optimization of Corrosion Process after Diffusion in InSb 8

Optimization of Corrosion Process after Diffusion in InSb

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8th Symposium on Novel Photoelectronic Detection technology and Applications

作者： Zhou, Xiaoqian Wei, Peng Wang, Haizhen Lyu, Yanqiu Luoyang Optoelectro Technology Development Center Luoyang471099 China Aviation Key Laboratory of Science and Technology on Infrared Detector Luoyang471099 China The Engineering Center for Antimonide-Based Infrared Detector Research of Henan Province Luoyang471099 China

ISBN: (数字)9781510653122

ISBN: (纸本)9781510653115

The surface contamination and the complexity of the process seriously restrict the development of InSb detector. The corrosion rates of wafers from different diffusion batches and different crystal in different batches of corrosive liquid were studied to determine a stable corrosion time by depth testing. The research shows that the high concentration on the surface can be removed once by controlling the corrosion time to realize the optimization of the corrosion process after diffusion. Through the surface analysis, the current-voltage and imaging characterization analysis, this method can effectively remove the stress on the wafer surface and the wafer damage in the process of diffusion. This optimized method can not only raise the process efficiency, but also greatly promote the surface quality of InSb. The contamination and residue on the surface will be reduced, and thus the performance of the detector will be improved. © 2022 SPIE

关键词： Diffusion

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Modeling of thermal stresses in passivation layers of InSb infrared detector 8

Modeling of thermal stresses in passivation layers of InSb i...

引用

8th Symposium on Novel Photoelectronic Detection technology and Applications

作者： Wu, Dongying Liu, Wei Wang, Wen Lyu, Yanqiu Luoyang Optoelectro Technology Development Center Luoyang471099 China Aviation Key Laboratory of Science and Technology on Infrared Detector Luoyang471099 China The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province Luoyang471099 China

ISBN: (数字)9781510653122

ISBN: (纸本)9781510653115

Due to a big difference between the temperature of the passivation film preparation and the temperature when the device is used, the stress will appear in the layers, and the existence of stress will affect the spectral performance of the InSb infrared detector. SiO2 or SiNx passivation film for the InSb device is prepared at 130 °C and is used at 77K, which the stress is seriously affect the device performance due to the mismatch. We simulate the stress between different thickness of SiO2 and SiNx single-layer, SiO2/SiNx double-layer and SiO2/SiNx/SiO2/SiNx multilayer passivation films on the InSb substrate. The bending strain of the SiO2/SiNx double-layer passivation films is the smallest. Combined the formula of infrared transmittance, we get less strain when the single-layer SiO2 thickness is 0.78 µm or the single-layer SiNx thickness is 0.54 µm. When the thicknesses of SiO2 and SiNx are 0.1 µm and 0.42µm respectively for the double-layer passivation film system, the external transmittance is the largest and the strain is smallest. © 2022 SPIE

关键词： Passivation

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Preparation and etching of the mask of the type II superlattice for Focal Plane Arrays 8

Preparation and etching of the mask of the type II superlatt...

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8th Symposium on Novel Photoelectronic Detection technology and Applications

作者： Wen, Wang Dongying, Wu Xubo, Zhu Fei, Tao Yanqiu, Lv Luoyang Optoelectro Technology Development Center Luoyang471099 China Aviation Key Laboratory of Science and Technology on Infrared Detector Luoyang471099 China The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province Luoyang471099 China

ISBN: (数字)9781510653122

ISBN: (纸本)9781510653115

In the research of the InAs/GaSb type II superlattice, MW/SW?MW/LW?MW/MW two color superlattice infrared focal detector has been developed abroad[1]. In this paper, we study the uniformity, compactness and etching resisrance of the mask prepared by PECVD. It has been proved that dry etching can satisfied the superlattice material etching depth by experiment [2]. When the experimental condition is that the CH4:H2:Cl2:Ar flow ratio is 8:15:6:15, ICP power is 400 W, and the reaction pressure is 1.0 Pa,it can be etched to the requirements of two-color superlattice depth with clear?flat mesa and no residual generation[3]. The experiment optimizes the etching technology of two-color superlattice material, and the etching result meets the requirements of the etching depth and quality of the two-color superlattice chip. © 2022 SPIE

关键词： Dry etching

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Normalized LMS adaptive filter algorithm: principles and verilog HDL implementation 4

Normalized LMS adaptive filter algorithm: principles and ver...

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4th International Conference on Electronic Information and Communication Engineering, EICE 2025

作者： Wang, Haoxu Li, Bingjie Liu, Ming Yang, Dezhen Chen, Zhijie Liu, Xu Wan, Peiyuan Beijing Embedded System Key Lab School of Information Science and Technology Beijing University of Technology Beijing China National Key Laboratory of Infrared Detection Technologies Beijing China

This article offers a detailed exploration of the Normalized Least Mean Squares (NLMS) algorithm, highlighting its enhanced adaptive filtering capabilities and robust performance in managing input signal correlations. It delves into the foundational principles of the NLMS algorithm and outlines the essential modules required for its implementation in Verilog HDL. The implementation and simulation of the NLMS adaptive filter are studied. The simulation outcomes indicate that the convergence rate of the algorithm is superior to that of the conventional LMS algorithm. © 2025 Institute of Physics Publishing. All rights reserved.

关键词： Adaptive filtering

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