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Hybrid CsPbBr3@CP-1 composites with enhanced stability and dual-emitting for white LED and photoelectrical applications

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Progress in Natural science: Materials International 2025年

作者： Zhou, Hao Fan, Qingxin Zhu, Shaowen Zhou, Minjie Liu, Jingyi Li, Zhiqiang Jin, Bing Zhang, Xiandong Liu, Min Wang, Yilin School of Integrated Circuits Shandong Technology Center of Nanodevices and Integration Shandong University Jinan250100 China Institute of Molecular Sciences and Engineering Institute of Frontier and Interdisciplinary Science Shandong University Qingdao266235 China Key Laboratory of Laser and Infrared System Ministry of Education Center for Optics and Research Engineer Shandong University Qingdao266235 China Shandong Wanbo Technologies Co. LTD Jinan250100 China

The halide perovskite CsPbBr3 quantum dots (QDs) exhibit remarkable potential for diverse applications, attributed to their distinctive optical properties. However, their poor stability hinders practical implementation. In this study, we enhanced the stability of perovskite QDs by incorporating CsPbBr3 QDs into a coordination polymer called CP-1. CP-1 features excellent photoluminescent properties thanks to its ligand trans,trans-9,10-bis(4-pyridylethenyl) anthracene (An2Py). The hybrid CsPbBr3@CP-1 composites possess dual emissions: a narrow peak from CsPbBr3 QDs and a broad band from CP-1. Due to the enhanced stability of CsPbBr3 QDs, a white light-emitting diode (LED) was fabricated using CsPbBr3@CP-1 composites. In addition, the hybrid composites shows promising photoelectrical characteristics. Therefore, this work presents a methodology enhancing the stability and optical characteristics of CsPbBr3 QDs, thereby broadening the practical applications of optical QDs in white LEDs and optoelectronic devices. © 2025 Chinese Materials Research Society

关键词： Perovskite

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Unveiling Pump induced Magnon Mode via its Strong Interaction with Walker Modes

arXiv

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arXiv 2022年

作者： Rao, Jinwei Yao, Bimu Wang, C.Y. Zhang, C. Yu, Tao Lu, Wei School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China School of Physics Huazhong University of Science and Technology Wuhan430074 China

We observe a power-dependent anti-crossing of Walker spin-wave modes under a microwave pump when placing a ferrimagnet in a microwave waveguide that does not support any discrete photon mode. We interpret the unexpected anti-crossing as the generation of a pump induced magnon mode that couples strongly to the Walker modes of ferrimagnet. We realize a remarkable functionality of this anti-crossing, i.e., a microwave frequency comb, in terms of the cross-Kerr nonlinearity that mixes the pump and probe frequencies. Such a frequency comb gets rid of the charge noise from carriers, unlike those produced by diode mixers, and thus may be useful for coherent information conversion with ultra-low noise. © 2022, CC BY-NC-SA.

关键词： Ferrimagnetism

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Coherent Microwave Emission of a Gain-Driven Polariton

arXiv

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arXiv 2023年

作者： Yao, Bimu Gui, Y.S. Rao, J.W. Zhang, Y.H. Lu, Wei Hu, C.-M. Department of Physics and Astronomy University of Manitoba WinnipegR3T 2N2 Canada State Key Laboratory of Infrared Physics Chinese Academy of Sciences Shanghai200083 China School of Physical Science and Technology ShanghaiTech University Shanghai201210 China

By developing a gain-embedded cavity magnonics platform, we create gain-driven polariton (GDP) that is activated by an amplified electromagnetic field. Distinct effects of gain-driven light-matter interaction, such as polariton auto-oscillations, polariton phase singularity, self-selection of a polariton bright mode, and gain-induced magnon-photon synchronization, are theoretically studied and experimentally manifested. Utilizing the gain-sustained photon coherence of the GDP, we demonstrate polariton-based coherent microwave amplification (∼ 40 dB) and achieve high-quality coherent microwave emission (Q > 109). © 2023, CC BY-NC-ND.

关键词： Polariton

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Watt-Level Diode-Pumped Tm:CALGO Laser at 2.31 μm

Watt-Level Diode-Pumped Tm:CALGO Laser at 2.31 μm

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Yu, Xiaoxu Pan, Zhongben Eremeev, Kirill Loiko, Pavel Chu, Hongwei Pan, Han Braud, Alain Camy, Patrice Giordano, Luidgi Viana, Bruno Griebner, Uwe Petrov, Valentin Li, Dechun School of Information Science and Engineering Key Laboratory of Laser and Infrared System Integration Technology Ministry of Education Shandong University Qingdao266237 China UMR 6252 CEA CNRS ENSICAEN Université de Caen 6 Boulevard Maréchal Juin Caen14050 Cedex 4 France Chimie ParisTech PSL University CNRS Institut de Recherche de Chimie Paris 11 rue Pierre et Marie Curie Paris75005 France Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy Max-Born-Str. 2a Berlin12489 Germany

A diode-pumped continuous-wave 1.5 at.% Tm:CALGO laser operating on the 3H4→3H5 transition generated 1.44 W at 2284-2348 nm with a linear laser polarization (σ). The relevant spectroscopic properties of this materia... 详细信息

ISBN: (纸本)9781957171395

关键词： Electro-optical waveguides Laser transitions Lasers and electrooptics Semiconductor lasers

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Watt-Level Diode-Pumped Tm:CALGO Laser at 2.31 μm

Watt-Level Diode-Pumped Tm:CALGO Laser at 2.31 μm

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CLEO: science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

作者： Yu, Xiaoxu Pan, Zhongben Eremeev, Kirill Loiko, Pavel Chu, Hongwei Pan, Han Braud, Alain Camy, Patrice Giordano, Luidgi Viana, Bruno Griebner, Uwe Petrov, Valentin Li, Dechun School of Information Science and Engineering Key Laboratory of Laser and Infrared System Integration Technology Ministry of Education Shandong University Qingdao266237 China UMR 6252 CEA-CNRS-ENSICAEN Université de Caen 6 Boulevard Maréchal Juin Caen14050 Cedex 4 France Chimie ParisTech PSL University CNRS Institut de Recherche de Chimie Paris 11 rue Pierre et Marie Curie Paris75005 France Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy Max-Born-Str. 2a Berlin12489 Germany

关键词： Optical pumping

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Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents

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Light(science & Applications) 2020年第1期9卷 407-416页

作者： Jiayue Han Meiyu He Ming Yang Qi Han Fang Wang Fang Zhong Mengjian Xu Qing Li He Zhu Chongxin Shan Weida Hu Xiaoqing Chen Xinran Wang Jun Gou Zhiming Wu Jun Wang School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Science500 Yutian RoadShanghai 200083China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhou 450001China National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance ***,for most phototransistors,the photoresponse characteristics are modulated with an electrical gate or a static *** this paper,we demonstrate a graphene/C_(60)/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light *** exploiting the power-dependent multiple states of the photocurrent,remarkable logical photocurrent switching under infrared light modulation occurs in a thick C_(60) layer(11 nm)device,which implies competition of the photogenerated carriers between graphene/C_(60) and C_(60)/***,we observe a complete positive-negative alternating process under continuous 405 nm ***,infrared light modulation of a thin C_(60)(5 nm)device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W,and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C_(60) *** addition,the tuneable bandwidth of the infrared response from 10 to 3×10^(3) Hz under visible light modulation is *** distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.

关键词： heterojunction transistors optoelectronic

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Artificial Structural Colors and Applications

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The Innovation 2021年第1期2卷 11-25页

作者： Zhiyi Xuan Junyu Li Qingquan Liu Fei Yi Shaowei Wang Wei Lu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China Shanghai Engineering Research Center of Energy-saving Coatings Shanghai 200083China University of Chinese Academy of Sciences Beijing100049China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Shanghai Research Center for Quantum Sciences Shanghai 201315China

Structural colors are colors generated by the interaction between incident light and *** colors have been studied for decades due to their promising advantages of long-term stability and environmentally friendly properties compared with conventional pigments and *** studies have demonstrated many artificial structural colors inspired by naturally generated colors from plants and ***,many strategies consisting of different principles have been reported to achieve dynamically tunable structural ***,the artificial structural colors can have multiple functions besides decoration,such as absorbing solar energy,anti-counterfeiting,and information *** the present work,we reviewed the typical artificial structural colors generated by multilayer films,photonic crystals,and metasurfaces according to the type of structures,and discussed the approaches to achieve dynamically tunable structural colors.

关键词： tunable artificial structural

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Erbium-Ytterbium Co-doped Tantalum Pentoxide as a Gain Material for Silicon-based Optoelectronics

Erbium-Ytterbium Co-doped Tantalum Pentoxide as a Gain Mater...

引用

Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim)

作者： Xiwen He Zheng Zhang Rongping Wang Weibiao Chen Zhiping Zhou Aerospace Laser Technology and Systems Department Qiguang Research and Innovation Center Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China Laboratory of Infrared Material and Devices Advanced Technology Research Institute Ningbo University Ningbo Zhejiang China State Key Laboratory of Advanced Optical Communications Systems and Networks School of Electronics Peking: University Beijing China

We demonstrate an Erbium-Ytterbium (Er-Yb) co-doped tantalum pentoxide (Ta 2 O 5 ) gain material for integrated waveguide amplifiers and lasers. Luminescence properties of the film were characterized, and optical wave... 详细信息

ISBN: (数字)9798350372076

ISBN: (纸本)9798350372083

关键词： Tantalum Stimulated emission Optical device fabrication Waveguide lasers Luminescence Lasers and electrooptics Erbium-doped fiber amplifiers

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On-chip short-wave infrared multispectral detector based on integrated Fabry–Perot microcavities array

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Chinese Optics Letters 2022年第6期20卷 25-29页

作者： Zhiyi Xuan Qingquan Liu Zhuangzhuang Cui Songlei Huang Bo Yang Chenlu Li Shaowei Wang Wei Lu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China University of Chinese Academy of Sciences Bejing 100049China School of Physical Science and Technology Shanghai Tech UniversityShanghai 201210China Shanghai Research Center for Quantum Sciences Shanghai 201315China State Key Laboratories of Transducer Technology Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Nantong Academy of Intelligent Sensing Nantong 226000China

We demonstrate an ultra-compact short-wave infrared[SWIR]multispectral detector chip by monolithically integrating the narrowband Fabry–Perot microcavities array with the In Ga As detector focal plane array.A 16-channel SWIR multispectral detector has been fabricated for *** different narrowband response spectra are acquired on a 64×64 pixels detector chip by four times combinatorial etching *** peak of the response spectra varies from1450 to 1666 nm with full width at half-maximum of 24 nm on *** size of the SWIR multispectral detection system is remarkably reduced to a 2 mm^(2) detector chip.

关键词： short-wave infrared detector multi-spectra micro-cavity on-chip

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Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity

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Photonics Research 2021年第11期9卷 2167-2175页

作者： JIAQI ZHU HE ZHU MENGJUAN LIU YAO WANG HANLUN XU NASIR ALI HUIYONG DENG ZHIYONG TAN JUNCHENG CAO NING DAI HUIZHEN WU Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Zhejiang Province Key Laboratory of Quantum Technology and Devices Department of Physicsand State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Broadband response is pursued in both infrared(IR)and terahertz(THz)detection technologies,which find their applications in both terrestrial and astronomical ***,we report an ultrabroadband and multiband IR/THz detector based on blocked-impurity-band detecting *** detectors are prepared by implanting phosphorus into germanium(Ge:P),where photoresponses with a P impurity band,a self-interstitial defect band,and a vacancy-P(V-P)pair defect band are realized *** response spectra of the detectors show ultrabroad and dual response bands in a range of 3-28μm(IR band)and 40-165μm(THz band),***,a tiny mid-IR(MIR)band within 3-4.2μm is embedded in the IR *** THz band arises from the P impurity band,whereas the IR and the MIR bands are ascribed to the two defect ***150 m V and 4.5 K,the peak detectivities of the three bands are obtained as 2.9×10^(12) Jones(at 3.9μm),6.8×10^(12) Jones(at 16.3μm),and 9.9×10^(12) Jones(at 116.5μm),*** impressive coverage andsensitivity of the detectors are promising for applications in IR and THz detection technologies.

关键词： multiband bands defect

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