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Room-Temperature Anisotropic Plasma Mirror and Polarization-Controlled Optical Switch Based on Type-II Weyl Semimetal WP2

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Physical Review Applied 2020年第1期13卷 014058-014058页

作者： Kaixuan Zhang Yongping Du Zeming Qi Bin Cheng Xiaodong Fan Laiming Wei Lin Li Dongli Wang Guolin Yu Shuhong Hu Changhong Sun Zhiming Huang Junhao Chu Xiangang Wan Changgan Zeng International Center for Quantum Design of Functional Materials Hefei National Laboratory for Physical Sciences at the Microscale CAS Key Laboratory of Strongly Coupled Quantum Matter Physics Department of Physics and Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui 230026 China Department of Applied Physics and Institution of Energy and Microstructure Nanjing University of Science and Technology Nanjing Jiangsu 210094 China National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230029 China National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China National Laboratory of Solid State Microstructures Department of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing Jiangsu 210093 China

Anisotropy in electronic structures may ignite intriguing anisotropic optical responses, as has been well demonstrated in various systems including superconductors, semiconductors, and even topological Weyl semimetals. Meanwhile, it is well established in metal optics that the metal reflectance declines from one to zero when the photon frequency is above the plasma frequency ωp, behaving as a plasma mirror. However, the exploration of anisotropic plasma mirrors and corresponding applications remains elusive, especially at room temperature. Here, we discover a pronounced anisotropic plasma reflectance edge in the type-II Weyl semimetal WP2, with an anisotropy ratio of ωp up to 1.5. Such anisotropic plasma mirror behavior and its robustness against temperature promise optical device applications over a wide temperature range. For example, the high sensitivity of polarization-resolved plasma reflectance edge renders WP2 an inherent polarization detector. We further achieve a room-temperature WP2-based optical switch, effectively controlled by simply tuning the light polarization. These findings extend the frontiers of metal optics as a discipline and promise the design of multifunctional devices combining both topological and optical features.

关键词： Optoelectronics Plasmonics Polarization of light Topological effects in photonic systems Topological phases of matter Devices Transition metal dichalcogenides Weyl semimetal

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A lack of LAEs within 5Mpc of a luminous quasar in an overdensity at z=6.9: potential evidence of quasar negative feedback at protocluster scales

arXiv

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arXiv 2024年

作者： Lambert, Trystan S. Assef, R.J. Mazzucchelli, C. Bañados, E. Aravena, M. Barrientos, F. González-López, J. Hu, W. Infante, L. Malhotra, S. Moya-Sierralta, C. Rhoads, J. Valdes, F. Wang, J. Wold, I.G.B. Zheng, Z. Instituto de Estudios Astrofísicos Facultad de Ingeniería y Ciencias Universidad Diego Portales Av. Ejército Libertador 441 Santiago Chile ICRAR The University of Western Australia 35 Stirling Highway CrawleyWA6009 Australia Max Planck Institut für Astronomie Königstuhl 17 HeidelbergD-69117 Germany Instituto de Astrofísica Centro de Astroingeniería Facultad de Física Pontificia Universidad Católica de Chile Casilla 306 Santiago22 Chile Las Campanas Observatory Carnegie Institution of Washington Casilla 601 La Serena Chile Department of Physics and Astronomy Texas A&M University College StationTX77843-4242 United States George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy Texas A&M University College StationTX77843-4242 United States Astrophysics Science Division Code 665 NASA Goddard Space Flight Center 8800 Greenbelt Rd. GreenbeltMD20771 United States NSF’s National Optical/Infrared Research Laboratory 950 N. Cherry Ave TucsonAZ85719 United States CAS Key Laboratory for Research in Galaxies and Cosmology Department of Astronomy University of Science and Technology of China Anhui Hefei230026 China Department of Physics The Catholic University of America WashingtonDC20064 United States Center for Research and Exploration in Space Science and Technology NASA/GSFC GreenbeltMD20771 United States Key Laboratory for Research in Galaxies and Cosmology Shanghai Astronomical Observatory Chinese Academy of Sciences 80 Nandan Road Shanghai200030 China

High-redshift quasars are thought to live in the densest regions of space which should be made evident by an overdensity of galaxies around them. However, campaigns to identify these overdensities through the search of Lyman Break Galaxies (LBGs) and Lyman α emitters (LAEs) have had mixed results. These may be explained by either the small field of view of some of the experiments, the broad redshift ranges targeted by LBG searches, and by the inherent large uncertainty of quasar redshifts estimated from UV emission lines, which makes it difficult to place the Ly-α emission line within a narrowband filter. Here we present a three square degree search (∼ 1000 pMpc2) for LAEs around the z = 6.9 quasar VIK J2348–3054 using the Dark Energy CAMera (DECam), housed on the 4m Blanco telescope, finding 38 LAEs. The systemic redshift of VIK J2348–3054 is known from ALMA [CII] observations and place the Ly-α emission line of companions within the NB964 narrowband of DECam. This is the largest field of view LAE search around a z > 6 quasar conducted to date. We find that this field is ∼ 10 times more overdense when compared to the Chandra Deep-Field South, observed previously with the same instrumental setup as well as several combined blank fields. This is strong evidence that VIK J2348–3054 resides in an overdensity of LAEs over several Mpc. Surprisingly, we find a lack of LAEs within 5 physical Mpc of the quasar and take this to most likely be evidence of the quasar suppressing star formation in its immediate vicinity. This result highlights the importance of performing overdensity searches over large areas to properly assess the density of those regions of the Universe. © 2024, CC BY-NC-ND.

关键词： Dark energy

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Author Correction: High-entropy relaxor ferroelectric ceramics for ultrahigh energy storage

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Nature communications 2024年第1期15卷 5831页

作者： Haonan Peng Tiantian Wu Zhen Liu Zhengqian Fu Dong Wang Yanshuang Hao Fangfang Xu Genshui Wang Junhao Chu Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China. State Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China. Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China. zhenliu@***. Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University 710049 Xi'an Shaanxi China. wang_dong1223@***. Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China. genshuiwang@***. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China. genshuiwang@***. State Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China. genshuiwang@***. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China.

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Chargeable photoconductivity in Van der Waals heterojunctions

arXiv

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arXiv 2020年

作者： Jiang, Yucheng He, Anpeng Chen, Yu Liu, Guozhen Lu, Hao Zhao, Run Long, Mingshen Gao, Ju Wu, Quanying Ge, Xiaotian Ning, Jiqiang Hu, Weida Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu215009 China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai200083 China School for Optoelectronic Engineering Zaozhuang University Shandong277160 China Suzhou Jiangsu215009 China

Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nanodevices. Considerable research has been performed and has reported valuable applications of photovoltaic cells, photodetectors, etc. However, simultaneous energy conversion and storage in a single device has not been achieved. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe2 layer and quasi-2D electron gas. After once optical illumination, the device stores the light-generated electrons and holes for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness;this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs takes place at the end of their lifetime, causing a release of heat;in contrast, infinite-lifetime photocarriers can be generated in CPC devices without a thermal loss. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-energy states below the critical temperature reaches as high as 109, with an external quantum efficiency of 4410000% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path towards storage-type photoconductors and high-efficiency entropy-decreasing devices. Copyright © 2020, The Authors. All rights reserved.

关键词： Van der Waals forces

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Calibrating photometric redshift measurements with the Multi-channel Imager (MCI) of the China Space Station Telescope (CSST)

arXiv

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arXiv 2021年

作者： Cao, Ye Gong, Yan Zheng, Zhen-Ya Xu, Chun Key Laboratory of Space Astronomy and Technology National Astronomical Observatories Chinese Academy of Sciences Beijing100012 China School of Astronomy and Space Sciences University of Chinese Academy of Sciences Beijing100049 China Science Center for China Space Station Telescope National Astronomical Observatories Chinese Academy of Sciences 20A Datun Road Beijing100101 China CAS Key Laboratory for Research in Galaxies and Cosmology Shanghai Astronomical Observatory Shanghai200030 China Division of Optical Astronomical Technologies Shanghai Astronomical Observatory Shanghai200030 China Joint Center of SHAO and SITP for Infrared Astronomical Instrumentation Shanghai Astronomical Observatory Shanghai200030 China

The China Space Station Telescope (CSST) photometric survey aims to perform a high spatial resolution (∼ 0.15″) photometric imaging for the targets that cover a large sky area (∼17,500 deg2) and wide wavelength range (from NUV to NIR). It expects to explore the properties of dark matter, dark energy, and other important cosmological and astronomical areas. In this work, we evaluate whether the filter design of the Multi-channel Imager (MCI), one of the five instruments of the CSST, can provide accurate photometric redshift (photo-z) measurements with its nine medium-band filters to meet the relevant scientific objectives. We generate the mock data based on the COSMOS photometric redshift catalog with astrophysical and instrumental effects. The application of upper limit information of low signal-to-noise ratio (SNR) data is adopted in the estimation of photo-z. We investigate the dependency of photo-z accuracy on the filter parameters, such as band position and width. We find that the current MCI filter design can achieve good photo-z measurements with accuracy σz 0.017 and outlier fraction fc 2.2%. It can effectively improve the photo-z measurements of the main CSST survey using the Survey Camera (SC) to an accuracy σz 0.015 and outlier fraction fc 1.5%. It indicates that the original MCI filters are proper for the photo-z calibration. Copyright © 2021, The Authors. All rights reserved.

关键词： Photometry

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Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors

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Nature communications 2024年第1期15卷 4396页

作者： Fengrui Sui Haoyang Li Ruijuan Qi Min Jin Zhiwei Lv Menghao Wu Xuechao Liu Yufan Zheng Beituo Liu Rui Ge Yu-Ning Wu Rong Huang Fangyu Yue Junhao Chu Chungang Duan Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200062 China. Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200062 China. rjqi@***. National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China. rjqi@***. College of Materials Shanghai Dianji University Shanghai 201306 China. jmaish@***. School of Physics Huazhong University of Science and Technology Wuhan 430074 China. Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China. Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200062 China. ynwu@***. Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200062 China. fyyue@***. Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China. fyyue@***. Shanghai Center of Brain-inspired Intelligent Materials and Devices East China Normal University Shanghai 200062 China. fyyue@***. National Laboratory of Infrared Physics Shanghai Institute of Technical Physics Shanghai 200083 China. Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China. Shanghai Center of Brain-inspired Intelligent Materials and Devices East China Normal University Shanghai 200062 China.

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Corrigendum to “Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications” Nano Energy 104 (2022) 107928

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Nano Energy 2023年 106卷

作者： Rui He Naixin Liu Yaqi Gao Renfeng Chen Siyao Zhang Hongfeng Yuan Yiwei Duo Jintong Xu Xiaoli Ji Jianchang Yan Junxi Wang Jianguo Liu Jinmin Li Tongbo Wei Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083 China State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

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High-speed InAs/GaSb mid-wave infrared interband cascade photodetector at room temperature

arXiv

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arXiv 2020年

作者： Xie, Zhiyang Huang, Jian Chai, Xuliang Deng, Zhuo Chen, Yaojiang Lu, Qi Xu, Zhicheng Chen, Jianxin Zhou, Yi Chen, Baile School of Information Science and Technology ShanghaiTech University Shanghai201210 China Key Laboratory of Infrared Imaging Materials and Detector Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences No.1 Sub-Lane Xiangshan Xihu District Hangzhou310024 China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China University of Chinese Academy of Sciences Beijing100049 China Physics Department Lancaster University LancasterLA1 4YB United Kingdom

High speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection and ranging (LIDAR). In this work, we report a high-speed room-temperature mid-wave infrared interband cascade photodetector (ICIP) based on a type-II InAs/GaSb superlattice. The devices show an optical cut-off wavelength around 5µm and a 3-dB bandwidth up to 7.04 GHz. The relatively low dark current density around 9.39 × 10−2 A/cm2 under −0.1 V is also demonstrated at 300K. These results validate the advantages of ICIPs to achieve both high-frequency operation and low noise at room temperature. Limitations on the high-speed performance of the detector are also discussed based on the S-parameter analysis and other RF performance measurement. Copyright © 2020, The Authors. All rights reserved.

关键词： infrared radiation

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High speed mid-infrared interband cascade photodetector based on InAs/GaSb Type-II superlattice

arXiv

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arXiv 2019年

作者： Chen, Yaojiang Chai, Xuliang Xie, Zhiyang Deng, Zhuo Zhang, Ningtao Zhou, Yi Xu, Zhicheng Chen, Jianxin Chen, Baile School of Information Science and Technology ShanghaiTech University Shanghai201210 China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Infrared Imaging Materials and Detector Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China

—High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 µm at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 µm circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed. Copyright © 2019, The Authors. All rights reserved.

关键词： infrared radiation

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Two-Stage Interband Cascade infrared Photodetector based on InAs/GaSb Type-II Superlattice for High Speed Mid-Wave infrared Applications

Two-Stage Interband Cascade Infrared Photodetector based on ...

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Asia Communications and Photonics Conference

作者： Yaojiang Chen Xuliang Chai Zhiyang Xie Zhuo Deng Ningtao Zhang Yi Zhou Zhicheng Xu Jianxin Chen Baile Chen School of Information Science and Technology ShanghaiTech University Shanghai 201210 China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China University of Chinese Academy of Sciences Beijing 100049 China Key Laboratory of Infrared Imaging Materials and Detector Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 20083 China

We report a two-stage interband cascade infrared photodetector based on InAs/GaSb type-II superlattice. The measurement shows a 50% cutoff wavelength of 5.3 μm, and 3dB bandwidth of 2.4 GHz at room temperature.

ISBN: (纸本)9781943580705

关键词： Free space optics Frequency combs Frequency measurement Lightwave analyzers Photodetectors Quantum well infrared photodetectors

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