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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： Zhu, Liqi Wang, Zihao Lin, Jiamu Chen, Baile Lin, Chun National Key Laboratory of Infrared Detection Technologies Shanghai Institute of Technical Physics Chinese Academy of Sciences China School of Information Science and Technology ShanghaiTech University Shanghai201210 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

Mid-wavelength infrared (MWIR) avalanche photodiodes (APDs) are widely employed in applications requiring rapid, high-precision detection, owing to their exceptional sensitivity, high gain, and fast response time. However, traditional MWIR APDs typically require low-temperature operation to mitigate signal-to-noise limitations arising from high dark currents in narrow bandgap materials. To address this issue, we propose an avalanche photodiode with a fully depleted absorber layer, designed to suppress diffusion dark current and reduce excess noise. At 80 K, the device achieves comparable gain-normalized dark current density (GNDCD) still -10 A/cm2 at gain -6 A/cm2 for gain values less than 189, while the excess noise holds below 1.4. © 2025 SPIE.

关键词： Avalanche photodiodes

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Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation

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Light(science & Applications) 2024年第11期13卷 2812-2823页

作者： Zhen Wang Chunhua Tan Meng Peng Yiye Yu Fang Zhong Peng Wang Ting He Yang Wang Zhenhan Zhang Runzhang Xie Fang Wang Shuijin He Peng Zhou Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina State Key Laboratory of ASIC and System Department of MicroelectronicsFudan UniversityShanghaiChina University of Chinese Academy of Sciences BeijingChina School of Life Science and Technology ShanghaiTech UniversityShanghaiChina School of Mathematical and Physical Sciences Wuhan Textile UniversityWuhanChina Shanghai Clinical Research and Trial Center ShanghaiChina

Given the surpassing of the Shockley-Quiesser efficiency limit in conventional p-n junction photovoltaic effect,bulk photovoltaic effect(BPVE)has garnered significant research ***,the BPVE primarily focuses on a narrow wavelength range,limiting its potential *** we report a giant infrared bulk photovoltaic effect in tellurene(Te)for broad-spectrum *** generated photocurrent in uniformly illuminated Te excludes other photoelectric effects and is attributed to the *** bulk photovoltaic wavelength in Te spans a wide range from the ultraviolet(390 nm)to the mid-infrared(3.8μm).Moreover,the photocurrent density of 70.4 A cm^(−2) under infrared light simulation outperforms that in previous ultraviolet and visible semiconductors as well as infrared *** attached to the dendrites or somata of the cortical neurons successfully elicit action potentials under broad-spectrum light *** work lays the foundation for the further development of infrared BPVE in narrow bandgap materials.

关键词： effect spectrum ultraviolet

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A novel self-alignment method for high precision silicon diffraction microlens arrays preparation and its integration with infrared focal plane arrays

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红外与毫米波学报 2024年第5期43卷 589-594页

作者： HOU Zhi-Jin CHEN Yan WANG Xu-Dong WANG Jian-Lu CHU Jun-Hao State Key Laboratory of Photovoltaic Science and Technology Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai 200433China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their *** errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving *** has a serious impact on its performance and subsequent *** response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is *** accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment *** the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective *** unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of *** high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the *** results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.

关键词： self-alignment diffraction microlens arrays high precision integration Si IRFPAs

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infrared small target detection based on spatial attention density peaks searching

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Optoelectronics Letters 2025年第2期21卷 90-96页

作者： RAO Junmin LU Siyu LIU Shijian LI Fanming CAS Key Laboratory of Infrared System Detection and Imaging Technology Shanghai Institute of Technical PhysicsShanghai 200083China University of Chinese Academy of Sciences Beijing 100049China Shanghai Institute of Technical Physics Chinese Academy of SciencesShanghai 200083China School of Information Science and Technology ShanghaiTech UniversityShanghai 201210China

The detection of small targets poses a significant challenge for infrared search and tracking (IRST) systems,as they must strike a delicate balance between accuracy and *** this paper,we propose a detection algorithm based on spatial attention density peaks searching (SADPS) and an adaptive window selection ***,the difference-of-Gaussians (DoG) filter is introduced for preprocessing raw infrared ***,the image is processed by ***,an adaptive window selection scheme is applied to obtain window templates for the target scale ***,the small target feature is used to enhance the target and suppress the ***,the true targets are segmented through a *** experimental results show that compared with the seven state-of-the-art small targets detection baseline algorithms,the proposed method not only has better detection accuracy,but also has reasonable time consumption.

关键词： template searching infrared

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The Influence of Environmental Radiation on the infrared Characteristics of Low Emissivity Surface 5

The Influence of Environmental Radiation on the Infrared Cha...

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5th International Conference on Optoelectronic science and Materials, ICOSM 2023

作者： Lv, Xiangyin Wang, Yahui Chen, Zongsheng Li, Zhigang Shi, Jiaming Anhui Provincial Laboratory of Advanced Laser Technology National University of Defense Technology Hefei230037 China Science and Technology on Near-Surface Detection Laboratory Wuxi214000 China State Key Laboratory of Pulsed Power Laser Technology National University of Defense Technology Anhui Hefei230037 China Anhui Provincial Key Laboratory of Infrared and Low Temperature Plasma Hefei230037 China

ISBN: (纸本)9781510674547

Low emissivity coatings or thin film materials are currently the main technical means for achieving infrared stealth. Due to the high reflectivity of low emissivity surfaces, environmental radiation such as solar radiation and ground radiation may have a significant impact on the effective infrared radiation of low emissivity surfaces. In response to the current research on low emissivity surface infrared radiation mainly limited to its suppression of self radiation, and the lack of information on the impact of environmental radiation on its effective radiation, starting from establishing a general infrared feature model that includes self emitted reflected environmental radiation, the focus is on deriving the effects of solar radiation and ground radiation on low emissivity surfaces in two atmospheric infrared windows 3-5 μm-band and 8-14 μm. The influence model of effective infrared radiation in the 3-5 μm-band has been calculated and experimentally verified. The results indicate that solar radiation and ground radiation have an impact on low emissivity materials in the mid infrared region of 3-5 μm-band and far infrared 8-14 μm. The impact of effective infrared radiation in the two bands is different and is related to factors such as ground temperature, the angle between the target surface and the ground, the atmospheric transmittance of solar radiation, and the angle of solar incidence. In general, reducing the emissivity of a surface can reduce its effective infrared radiation, which is beneficial for achieving infrared stealth. However, there are two common exceptions that make using low emissivity materials not a good way to achieve infrared stealth. One is that when the surface temperature of the target is below 60 ℃, due to the influence of solar radiation, reducing reflectivity in the 3-5 μm-band may actually enhance its effective radiation. That is a challenge to the targets in the background of low and normal temperatures during a clear day range to real

关键词： infrared radiation

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Enhanced electrical performance in CaBi_(4)Ti_(4)O_(15)ceramics through synergistic chemical doping and texture engineering

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Journal of Materiomics 2024年第2期10卷 471-479页

作者： Le Zhao Guohao Li Xiao Zhai Weijie Kuai Yuzhi Zhai Gang Tian Zhigang Gai Minglei Zhao Juan Du Hongjun Zhang Limei Zheng School of Information and Automation Engineering Qilu University of Technology(Shandong Academy of Sciences)Jinan250353China School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China Center for Optics Research and Engineering(CORE) Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdaoShandong266237China College of Materials Science and Engineering Liaocheng UniversityLiaocheng252059China Functional Materials and Acoustooptic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China

High-temperature piezoelectric materials with excellent piezoelectricity,low dielectric loss and large resistivity are highly desired for many industrial sectors such as aerospace,aircraft and nuclear *** a synergistic design strategy combining microstructural texture and chemical doping is employed to optimize CaBi 4Ti 4O15(CBT)ceramics with bismuth layer *** textured microstructure with an orientation factor of 80%e82%has been successfully achieved by the spark plasma sintering ***,by doping MnO_(2),both advantages of hard doping and sintering aids are used to obtain the excellent electrical performance of d_(33)=27.3 pC/N,tandδ-0.1%,Q_(31)~2,307 and electrical re-sistivityρ~6.5×10^(10)Ω·*** to 600℃,the 0.2%(in mass)Mn doped CBT ceramics still exhibit high performance of d_(33)=26.4 pC/N,r~1.5×10^(6)Ω·cm and tandδ~15.8%,keeping at an applicable level,thus the upper-temperature limit for practical application of the CBT ceramics is greatly *** work paves a new way for developing and fabricating excellent high-temperature piezoelectric materials.

关键词： CaBi_(4)Ti_(4)O_(15) Piezoelectricity Mechanical quality factor Resistivity

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高纵横比单层MoS_(2)纳米-微米带的可控合成及其在高性能光电晶体管中的应用

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science China Materials 2023年第10期66卷 3941-3948页

作者：蹇鹏承谭仕周郑志华刘伟杰赵永明许丹王鹏戴江南吴峰陈长清 Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China State Key Laboratory of Infrared Science and Technology Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,... 详细信息

本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,我们实现了对所获得的MoS_(2)的形貌和取向的调控;同时,通过改变生长时间,可以实现对MoS_(2)层数的调控.利用这种方法,我们获得了最窄宽度仅为200 nm,纵横比超过100的单层MoS_(2)纳米-微米带,且表征证明其具有很高的晶体质量.同时,我们还用该MoS_(2)纳米带作为沟道材料,制备了光电晶体管,测试表明其具有高达9×10^(5)的电流开/关比、超过10^(5)的光暗电流比以及高达8.6 A W^(-1)的响应度,展现了其在电子和光电子器件中的应用潜力.

关键词： MoS_(2)ribbons controllable synthesis chemical vapor deposition high-performance phototransistors

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Terahertz parametric upconversion detection based on a KTiOAsO4 crystal

Terahertz parametric upconversion detection based on a KTiOA...

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2024 Conference on Lasers and Electro-Optics/Pacific Rim, CLEO-PR 2024

作者： Ming, Na Fan, Shuzhen Zhang, Xingyu Chen, Xiaohan Cong, Zhenhua Liu, Zhaojun Guo, Quanxin Guo, Liyuan Jiao, Binzhe Yuan, Jiasheng Wang, Kaiyu Liu, Naichang Center for Optics Research and Engineering Key Laboratory of Laser and Infrared System Ministry of Education Shandong University Qingdao266237 China School of Information Science and Engineering Shandong Provincial Key Laboratory of Laser Technology and Application Shandong University Qingdao266237 China

Highly sensitive terahertz frequency upconversion detection was demonstrated with a KTiOAsO4 crystal. The detectable THz frequency ranges were 3.6-3.9, 4.2-4.4, and 4.8-5.0 THz. The minimum detectable terahertz energy...

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Pristine PN junction toward atomic layer devices

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Light(science & Applications) 2022年第7期11卷 1515-1522页

作者： Hui Xia Man Luo Wenjing Wang Hailu Wang Tianxin Li Zhen Wang Hangyu Xu Yue Chen Yong Zhou Fang Wang Runzhang Xie Peng Wang Weida Hu Wei Lu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China University of Chinese Academy of Sciences 100049 BeijingChina Jiangsu Key Laboratory of ASIC Design School of Information Science and TechnologyNantong UniversityNantong 226019 JiangsuChina School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

In semiconductor manufacturing,PN junction is formed by introducing dopants to activate neighboring electron and hole *** avoid structural distortion and failure,it generally requires the foreign dopants localize in the designated ***,however,is challenging due to an inevitable interdiffusion *** we report a brand-new junction architecture,called"layer PN junction",that might break through such limit and help redefine the semiconductor device *** from all existing semiconductors,we find that a variety of van der Waals materials are doping themselves from n-to p-type conductance with an increasing/decreasing *** means the capability of constructing homogeneous PN junctions in monolayers'dimension/precision,with record high rectification-ratio(>10^(5))and low cut-off current(<1 pA).More importantly,it spawns intriguing functionalities,like gate-switchable-rectification and noise-signal decoupled *** disclosed here might open up a path to develop novel nanodevice applications,where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.

关键词： dopant tuning layer

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Nonequilibrium carrier and phonon dynamics in the ferrimagnetic semiconductor Mn3Si2Te6

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Physical Review B 2024年第17期109卷 174309-174309页

作者： Y. Yang X. T. Chen Z. L. Li J. B. Pan F. Jing S. S. Zhang X. B. Wang J. L. Luo Key Laboratory of Education Ministry for Laser and Infrared System Integration Technology Beijing National Laboratory for Condensed Matter Physics School of Information Science and Engineering

We investigate the ultrafast carrier and phonon dynamics in the ferrimagnetic semiconductor Mn3Si2Te6 using time-resolved optical pump-probe spectroscopy. Our results reveal that the electron-phonon thermalization process with a subpicosecond timescale is prolonged by the hot-phonon bottleneck effect. We identify the subsequent relaxation processes associated with two nonradiative recombination mechanisms, i.e., phonon-assisted electron-hole recombination and defect-related Shockley-Read-Hall recombination. Temperature-dependent measurements indicate that all three relaxation components show large variation around 175 and 78 K, which is related to the initiation of spin fluctuation and ferrimagnetic order in Mn3Si2Te6. In addition, two pronounced coherent optical phonons are observed, in which the phonon with a frequency of 3.7 THz is attributed to the A1g mode of Te precipitates. Applying the strain pulse propagation model to the coherent acoustic phonons yields a penetration depth of 506 nm and a sound speed of 2.42 km/s in Mn3Si2Te6. Our results develop understanding of the nonequilibrium properties of the ferrimagnetic semiconductor Mn3Si2Te6 and also shed light on its potential applications in optoelectronic and spintronic devices.

关键词： Electron-phonon coupling Ferrimagnets Ultrafast femtosecond pump probe

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