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The investigation of anti-stokes lines in the index-guiding photonic crystal fiber

Zhongguo Jiguang/Chinese Journal of Lasers 2008年第SUPPL. 2期35卷 184-187页

作者： Liang, Danhua Hou, Lantian Gao, Fei Wang, Wei Wang, Fuzeng Institute of Infrared Optical Fibers and Sensors Yanshan University Qinhuangdao 066004 China Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao 066004 China

A photonic crystal fiber(PCF) with zero dispersion wavelength around 800 nm is designed and fabricated. The simulated results show that the zero dispersion wavelength of fundamental mode of the PCF is at 825 nm and FMW is possible in fundamental mode. Anti-Stokes line around 610 nm can be generated efficiently with 810nm 200 fs Ti: Sapphire laser used as pump. The output signal has a Gauss like field, which indicats that anti-Stokes signal is in the fundamental mode of PCF. The output energy of anti-Stokes signal is much more than the energy of residual pump laser. The maximum ratio of the anti-Stokes signal energy to the pump component in the output spectrum is estimated as 1.2 and the conversion efficiency is above 50%, wavelength conversion is achieved commendably.

关键词： Four wave mixing

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Effects of lattice strain and ion displacement on the bonding mechanism of the ferroelectric perovskite material BaTiO3: First-principles study

Effects of lattice strain and ion displacement on the bondin...

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作者： Shu, H.B. Zhou, G.C. Zhong, X.L. Sun, L.Z. Wang, J.B. Chen, X.S. Zhou, Y.C. Key Laboratory for Low Dimensional Materials and Application Technology Ministry of Education Xiangtan University Xiangtan 411105 Hunan China Institute of Modern Physics Xiangtan University Xiangtan 411105 Hunan China National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Science Shanghai 20083 China

The effects of lattice strain and ion displacement on the bonding mechanism of the perovskite material BaTiO3 have been studied by using the density-functional theory within the full-potential linear augmented plane wave (FP-LAPW) method. The valence and the bonding charge density, the density of states (DOS), the local DOS and the partial DOS were calculated to investigate the bonding mechanisms. The charge transfer, along with the bonding process, was analysed by using the atoms in molecules theory (AIM). Based on the analysis of the bonding and the topological characteristics, the evolution of the bonding strength according to different lattice strains and ion displacements along with the phase transition of BaTiO3 is shown quantitatively. Moreover, the evolution of the spontaneous polarization of BaTiO3 corresponding to the ion displacements is also discussed by a modern theory of polarization in the present paper. © IOP Publishing Ltd.

关键词： Perovskite

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Electronic properties and chemical trends of the arsenic in situ impurities in Hg1−xCdxTe: First-principles study

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Physical Review B 2007年第4期76卷 045219-045219页

作者： L. Z. Sun Xiaoshuang Chen Jijun Zhao J. B. Wang Y. C. Zhou Wei Lu Key Laboratory of Low Dimensional Materials & Application Technology Ministry of Education Institute of Modern Physics Xiangtan University Xiangtan 411105 China National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 200083 Shanghai China State Key Laboratory of Materials Modification by Laser Electron and Ion Beams School of Physics and Optoelectronic Technology and College of Advanced Science and Technology Dalian University of Technology Dalian 116024 China

The structural and electronic properties of the arsenic in situ impurity in Hg1−xCdxTe (MCT) have been studied by combining the full-potential linear augmented plane wave and plane-wave pseudopotential methods based on the density functional theory. The structural relaxations, the local charge density, and the densities of states were computed to investigate the impurity effects on the electronic structure. The bonding characteristic between the impurity and the host atoms was discussed by analyzing the valence and the bonding charge density. The defect levels introduced by the in situ arsenic impurity were determined by the transition energy levels which agree well with the experimental results. Based on the calculated formation energy, the chemical trends of the in situ arsenic impurity and the compensation effects between AsTe and AsHg in Hg1−xCdxTe have been studied systematically. A brief discussion on the activation model of the postgrowth annealing process of arsenic-doped MCT was also presented.

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A novel method for the fabrication of photonic crystal fiber

A novel method for the fabrication of photonic crystal fiber

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2006 International Conference on Communications, Circuits and Systems, ICCCAS

作者： Guiyao, Zhou Lantian, Hou Zhiyun, Hou Shuguang, Li Key Laboratory of Metastable Materials Science and Technology Yanshan University 066004 China Institute of Infrared Fibers and Sensors Yanshan University Qinghuandao 066004 China

ISBN: (纸本)0780395840

This paper describes a novel method of fabrication for glass photonic crystal fibres (GPCF) with die-cast process. The die is made of the heat-resisting alloy steel, whose inner structure matchs the GPCF's structure, and the SF6 glass is used as the material of GPCF. The die is vertically put in the vessel with SF6 glass, and the vacuum hose is attached to the top of the die, then put them in the furnace to heat at 870K together. The die is slowly filled with the softening glass under vacuum condiction till it is full. Keep it in the furnace to anneal at a rate of 20K/h to remove thermal stress that could lead to cracks. The outer tube of the die is taken apart after its temperature is close to room temperature, and the fused glasss bundle is etched in an acidic solution to remove the heat-resisting alloy steel rods, and the etched bundle is ready for use as a GPCF preform. The preform is thinned to a fibre. The GPCF is observed the generation of supercontinuum, with the flat plateau in the spectrum of output emission stretching from 400 to 1400nm by experimental measurement. The transmission loss is 0.2-0.3dB/m at the wavelength of 420-900nm. © 2006 IEEE.

关键词： Photonic crystals

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Adaptive split-step Fourier method for simulating ultrashort laser pulse propagation in photonic crystal fibres

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Chinese Physics B 2006年第2期15卷 437-443页

作者：李曙光邢光龙周桂耀韩颖侯蓝田胡明列栗岩锋王清月 Institute of Infrared Optical Fibers and Sensors College of Science Yanshan University Qinhuangdao 066004 China Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao 066004 China Key Laboratory of Optoelectronic Information Technical Science Ministry of Education College of Precision Instrument and Optoelectronics Engineering Tianjin University Tianjin 300072 China

In this paper, the generalized nonlinear Schrodinger equation （GNLSE） is solved by an adaptive split-step Fourier method （ASSFM）. It is found that ASSFM must be used to solve GNLSE to ensure precision when the soliton selffrequency shift is remarkable and the photonic crystal fibre （PCF） parameters vary with the frequency considerably. The precision of numerical simulation by using ASSFM is higher than that by using split-step Fourier method in the process of laser pulse propagation in PCFs due to the fact that the variation of fibre parameters with the peak frequency in the pulse spectrum can be taken into account fully.

关键词： photonic crystal fibre ultrashort laser pulse propagation adaptive split-step Fourier method

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Electrical properties of metamorphic in0.52Al 0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

Electrical properties of metamorphic in0.52Al 0.48As/In0.65G...

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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Qiu, Z.J. Liu, R. Zhang, S.L. Gui, Y.S. Cui, L.J. Zeng, Y.P. Chu, J.H. School of Microelectronics Fudan University Shanghai 200433 China State Key Lab. of ASIC System and Micro/Nanoelectronics Science and Technology Innovation Platform Fudan University Shanghai 200433 China National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China Institute of Semiconductors Chinese Academy of Sciences Beijing 10008 China

ISBN: (纸本)1424401615

Variable magnetic field Hall measurements were performed to investigate the electrical properties in In0.52Al0.48As/In 0.65Ga0.35As metamorphic high electron mobility transistors (MMHEMT's) on GaAs substrate at the temperature range from 4 to 100 K. The Shubnikov-de Hass (SdH) measurement shows the two-dimensional electronic behavior and two-subband electron occupation in MMHEMT's. The electron densities and mobilities of the two subbands are obtained by fast Fourier transform analysis. Both the SdH oscillations and conventional Hall analysis are in good agreement in the determination of total electron density, which is about 2.1×1012 cm-2 due to incomplete transfer of the electrons. The temperature dependence of the electron mobility indicates that at low temperature alloy scattering dominates, whereas at high temperature, the mobility is mainly limited by optical phonon scattering. © 2006 IEEE.

关键词： High electron mobility transistors

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Formation of stable fullerenelike GanAsn clusters (6≤n≤9): Gradient-corrected density-functional theory and a genetic global optimization approach

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Physical Review B 2006年第3期74卷 035319-035319页

作者： Jijun Zhao Rui-Hua Xie Xiaolan Zhou Xiaoshuang Chen Wei Lu State Key Laboratory of Materials Modification by Laser Electron and Ion Beams and College of Advanced Science and Technology Dalian University of Technology Dalian 116024 China Department of Physics and Key Laboratory of Ferroelectric Materials and Devices of Hubei Province Hubei University Wuhan 430062 China Cherry L. Emerson Center for Scientific Computing and Department of Chemistry Emory University Atlanta Georgia 30322 USA National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 224502 China

Based on gradient-corrected density-functional theory and genetic global optimization approach that directly searches for the configuration of greatest stability, we are able to find particularly stable structures for binary gallium arsenide clusters. We report a formation of fullerenelike GanAsn clusters with 6≤n≤9 due to the enhanced ionic characteristics of the Ga−As bonding. The IR and optical spectra of the GanAsn clusters are calculated, which are useful and important to distinguish the isomer structures and to examine the predicted trend of structural transitions by experiments.

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Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga...

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2006 8th International Conference on Solid-State and Integrated Circuit technology

作者： Z.J.Qiu R.Liu S.L.Zhang Y.S.Gui L.J.Cui Y.P.Zeng J.H.Chu School of Microelectronics Fudan University State Key Lab of ASIC & System & Micro/Nanoelectronics Science and Technology Innovation Platform Fudan University National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences Institute of Semiconductors Chinese Academy of Sciences

ISBN: (纸本)1424401607

Variable magnetic field Hall measurements were performed to investigate the electrical properties in InA10.48As/InGaAs metamorphic high electron mobility transistors（MMHEMT's） on GaAs substrate at the temperature range from 4 to 100 *** Shubnikov-de Hass（SdH） measurement shows the two-dimensional electronic behavior and two-subband electron occupation in MMHEMT'*** electron densities and mobilities of the two subbands are obtained by fast Fourier transform *** the SdH oscillations and conventional Hall analysis are in good agreement in the determination of total electron density, which is about 2.1x10 cm due to incomplete transfer of the *** temperature dependence of the electron mobility indicates that at low temperature alloy scattering dominates,whereas at high temperature,the mobility is mainly limited by optical phonon scattering.

关键词： As HEMT's on GaAs substrate As/In Electrical properties of metamorphic In

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Controlling of interstitial air holes in photonic crystal fibers and their influence on fibers basic properties

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Guangdianzi Jiguang/Journal of Optoelectronics Laser 2006年第SUPPL.期17卷 177-180页

作者： Li, Shu-Guang Zhou, Gui-Yao Hou, Lan-Tian Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao 066004 China Institute of Infrared Optical Fibers and Sensors College of Science Yanshan University Qinhuangdao 066004 China

Appearance and controlling of interstitial air holes (IAHs) in fabrication process of photonic crystal fibers (PCFs) are introduced in this paper. The modal properties of PCFs with and without IAHs are numerically investigated by the multipole method. It is shown that the IAHs can favorably decrease the confinement loss and the effective mode area of PCFs, and simultaneously increase the nonlinear coefficient in the PCFs. In addition, at the same air hole diameter d and pitch L PCFs with IAHs can shift the position of the zero-dispersion wavelengths to the shorter wavelengths and make the group-velocity dispersion more flattened in the region of anomalous dispersion. It is shown that the change in the optical properties induced by the presence of IAHs is different from those achieved by a simple increase of the air-filling fraction, a result attributed to stronger scattering by IAHs.

关键词： Optical fiber fabrication

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Influence of the magnetic field on the effective mass of the two-dimensional electron gas in Alx Ga1-x N/GaN heterostructures

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Physica Status Solidi (C) Current Topics in Solid State Physics 2006年第6期3卷 2246-2249页

作者： Tang, N. Shen, B. Wang, M.J. Yang, Z.J. Xu, K. Zhang, G.Y. Gui, Y.S. Zhu, B. Guo, S.L. Chu, J.H. Hoshino, K. Arakawa, Y. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 China National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China Research Center for Advanced Science and Technology Institute of Industrial Science University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153 Japan

The relationship between the magnetic field and the effective mass m* of the two-dimensional electron gas in the triangular quantum well at the heterointerface of modulation-doped Al0.15Ga0.85N/GaN heterostructures is investigated by means of temperature-dependent Shubnikov-de Haas measurements at low temperatures and high magnetic fields. The values of the m* have strong dependence on the magnetic field, which is thought to be attributed to conduction-band nonparabolicity of GaN. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Two dimensional electron gas

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