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4th International Conference on Laser, Optics, and Optoelectronic technology, LOPET 2024

作者： Yu, Nengwei Bai, Shengchuang Wang, Xunsi Dai, Shixun Nie, And Qiuhua Laboratory of Infrared Material and Devices Advanced Technology Research Institute College of Information Science and Engineering Ningbo University Ningbo315211 China Zhejiang Key Laboratory of Photoelectric Materials and Devices Ningbo315211 China Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province Ningbo315211 China

ISBN: (纸本)9781510681903

In this paper, a directly pumped passively Q-switched Nd3+-doped phosphate fiber laser using Cr4+:YAG as a saturable absorber is reported. The Nd3+-doped phosphate fiber preform with minimal internal defects were prepared by the double-peeled isolation extrusion method and drawn into optical fibers. The core-clad size of the fiber was 234/356 μm, with a transmission loss of 1.1 dB/m at 1053 nm. Subsequently, a passively Q-switched fiber laser was constructed based on the homemade Nd3+-doped phosphate fiber, and the effects of parameters such as the reflectivity of the output coupler mirror, the transmittance of the saturable absorber, the length of the fiber, and the pumping power on the characteristics of the output laser pulse were investigated. After optimizing the key parameters, the laser achieved a peak pulse energy of 388 μJ and a maximum peak power of 21.8 kW. The results provide fundamental theoretical and experimental guidance for the development of passively Q-switched fiber lasers with high peak power, demonstrating significant practical value and theoretical significance. © 2024 SPIE.

关键词： Fiber lasers

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Study of the growth mechanism of a self‑assembled and ordered multi‑dimensional heterojunction at atomic resolution

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Frontiers of Optoelectronics 2023年第4期16卷 37-48页

作者： Zunyu Liu Chaoyu Zhao Shuangfeng Jia Weiwei Meng Pei Li Shuwen Yan Yongfa Cheng Jinshui Miao Lei Zhang Yihua Gao Jianbo Wang Luying Li Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials Hubei Collaborative Innovation Center for Advanced Organic Chemical MaterialsSchool of Materials Science and EngineeringHubei UniversityWuhan 430061China Center for Electron Microscopy MOE Key Laboratory of Artificial Micro-and Nano-Structures and the Institute for Advanced StudiesSchool of Physics and TechnologyWuhan UniversityWuhan 430072China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Multi-dimensional heterojunction materials have attracted much attention due to their intriguing properties,such as high efciency,wide band gap regulation,low dimensional limitation,versatility and *** further improve the performance of materials,researchers have combined materials with various dimensions using a wide variety of ***,research on growth mechanism of such composite materials is still *** this paper,the growth mechanism of multidimensional heterojunction composite material is studied using quasi-two-dimensional(quasi-2D)antimonene and quasione-dimensional(quasi-1D)antimony sulfde as *** are synthesized by a simple thermal injection *** is observed that the consequent nanorods are oriented along six-fold symmetric directions on the nanoplate,forming ordered quasi-1D/quasi-2D *** transmission electron microscopy(TEM)characterizations confrm the chemical information and reveal orientational relationship between Sb2S3 nanorods and the Sb nanoplate as *** density functional theory calculations indicate that interfacial binding energy is the primary deciding factor for the self-assembly of ordered *** details may fll the gaps in the research on multi-dimensional composite materials with ordered structures,and promote their future versatile applications.

关键词： Multi-dimensional composite materials Ordered heterostructures-Self-assembly Growth mechanism

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Transparent nanocrystal-in-glass composite fibers for multifunctional temperature and pressure sensing

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Fundamental Research 2024年第3期4卷 624-634页

作者： Qinpeng Chen Qiwen Pan Shiliang Kang Zhenlu Cai Shengda Ye Puxian Xiong Zhongmin Yang Jianrong Qiu Guoping Donga State Key Laboratory of Luminescent Materials and Devices and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied TechniquesSchool of Materials Science and EngineeringSchool of Physics and OptoelectronicsSouth China University of TechnologyWushan Road 381Tianhe DistrictGuangzhou 510640China Laboratory of Infrared Materials and Devices the Research Institute of Advanced TechnologiesNingbo UniversityFenghua Road 818NingboJiangbei 315211China College of Optical Science and Engineering State Key Laboratory of Modern Optical InstrumentationZhejiang UniversityHangzhou 310027China

The pursuit of compact and integrated devices has stimulated a growing demand for multifunctional sensors with rapid and accurate responses to various physical parameters,either separately or *** fiber sensors have the advantages of robust stability,light weight,and compact geometry,enabling real-time and noninvasive signal detection by monitoring the fluorescence *** substantial progress in fluorescence sensors,achieving multifunctional sensing in a single optical fiber remains *** solve this problem,in this study,we present a bottom-up strategy to design and fabricate thermally drawn multifunctional fiber sensors by incorporating functional nanocrystals with temperature and pressure fluorescence responses into a transparent glass *** generate the desired nanocrystal-in-glass composite(NGC)fiber,the fluorescent activators,incorporated nanocrystals,glassy core materials,and cladding matrix are rationally *** the fluorescence intensity ratio technique,a self-calibrated fiber sensor is demonstrated,with a bi-functional response to temperature and *** temperature sensing,the NGC fiber exhibits temperature-dependent near-infrared emission at temperatures up to 573 K with a maximum absolute sensitivity of 0.019 K−1.A pressure-dependent upconversion emission is also realized in the visible spectral region,with a linear slope *** successful demonstration of multifunctional NGC fiber sensors provides an efficient pathway for new paradigms of multifunctional sensors as well as a versatile strategy for future hybrid fibers with novel combinations of magnetic,optical,and mechanical properties.

关键词： Fiber Nanocrystal-in-glass composite Nanocrystals Fluorescence detection Temperature-pressuresensing

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Multifunctional solar-blind ultraviolet photodetectors based on p-PCDTBT/n-Ga_(2)O_(3)heterojunction with high photoresponse

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InfoMat 2024年第2期6卷 118-130页

作者： Yifei Wang Zhenhua Lin Jingli Ma Yongyi Wu Haidong Yuan Dongsheng Cui Mengyang Kang XingGuo Jie Su Jinshui Miao Zhifeng Shi Tao Li Jincheng Zhang Yue Hao Jingjing Chang State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'anthe People's Republic of China School of Physics and Microelectronics Key Laboratory of Material PhysicsMinistry of EducationZhengzhou UniversityZhengzhouthe People's Republic of China Center for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of MaterialsDepartment of Materials Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China Advanced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi'anthe People's Republic of China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China

Solar-blind ultraviolet(UV)photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions have attracted extensive attention ***,the multifunctional solar-blind photodetector based on p-type poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)](PCDTBT)/n-type amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))is fabricated and investigated,which can work in the phototransistor mode coupling with self-powered *** the introduction of PCDTBT,the dark current of such the a-Ga_(2)O_(3)-based photodetector is decreased to 0.48 ***,the photoresponse parameters of the a-Ga_(2)O_(3)-based photodetector in the phototransistor mode to solar-blind UV light are further increased,that is,responsivity(R),photo-detectivity(D*),and external quantum efficiency(EQE)enhanced to 187 A W^(-1),1.3×10^(16) Jones and 9.1×10^(4)% under the weak light intensity of 11μW cm^(-2),*** to the formation of the built-in field in the p-PCDTBT/n-Ga_(2)O_(3) type-Ⅱ heterojunction,the PCDTBT/Ga_(2)O_(3) multifunctional photodetector shows self-powered *** responsivity of p-PCDTBT/n-Ga_(2)O_(3) multifunctional photodetector is 57.5 mA W^(-1) at zero *** multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga_(2)O_(3) heterojunction-based photodetectors.

关键词： amorphous Ga_(2)O_(3) heterojunction multifunctional PCDTBT solar-blind photodetectors

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Controllable dual-pulse laser directly for nonlinear photoacoustic microscopy

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Optics Letters 2025年第3期50卷 832-835页

作者： He, Hongsen You, Huiyue Wang, Hanjie Song, Qiannan Yao, Zhengrui Chen, Ningbo Dong, Xin Bai, Shengchuang Dong, Jun Department of Electronic Engineering Xiamen University Xiamen361102 China Fujian Key Laboratory of Ultrafast Laser Technology and Applications Xiamen University Xiamen361102 China Department of Electrical and Electronic Engineering The University of Hong Kong Pokfulam Road Hong Kong Laboratory of Infrared Material and Devices The Research Institute of Advanced Technologies College of Information Science and Engineering Ningbo University Ningbo315211 China

Nonlinear photoacoustic microscopy (PAM) usually requires dual-pulse excitation. Current approaches to realize dual-pulse laser train are indirect, mainly based on beam combinations. Here, we report a compact (∼5-cm-long cavity) laser source that directly outputs controllable nanosecond (∼34 ns) dual pulses, including the tunability of repetition rate (0–20 kHz), time delay (5–30 µs), and relative intensity ratio (20–500%), perfectly matching the requirements of nonlinear imaging in PAM. The single pulse energy is achieved up to ∼95 µJ. We showcase the nonlinear PA performance with this laser source in typical Grüneisen-relaxation-based applications with imaging contrast enhanced by 8 dB. The promising performance indicates that this dual-pulse laser can readily be applied to nonlinear PAMs, especially for portable applications. © 2025 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

关键词： Pulse repetition rate

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Study on the effect of implanted area on the multiplication region and characteristics of PIN HgCdTe avalanche photodiodes 10

Study on the effect of implanted area on the multiplication ...

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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： Xie, Hao Guo, Huijun Shen, Chuan Yang, Liao Chen, Lu He, Li National Key Laboratory of Infrared Detection Technologies Shanghai Institute of Technical Physics Chinese Academy of Science No. 500 Yu Tian Road Shanghai200083 China School of Information Science and Technology ShanghaiTech University No. 393 Huaxia Middle Road Shanghai201210 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

Linear-mode HgCdTe avalanche photodiodes (APDs) have garnered widespread attention due to their extremely low excess noise, operating bias in the range of -12 to 0V, and linearly tunable gain, all of which indicate promising future applications in optical observations. The design of the multiplication region based on the PIN structure is crucial as it determines the photoelectric characteristics of the device, such as gain and excess noise. This paper primarily investigates the impact of the implanted area on the multiplication region and the area-related gain and noise characteristics of mid-wavelength infrared (MWIR) HgCdTe APDs at 80 K. Studies on diodes with varying implanted areas reveal that diodes with larger implanted areas form a wider multiplication region, resulting in lower gain and higher excess noise factors. Additionally, mesa devices with graded layers of different implanted areas were designed and fabricated, and the shifts in their response spectra further validate our conclusions. © 2025 SPIE.

关键词： Avalanche photodiodes

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Wafer-scale patterned growth of type-II Dirac semimetal platinum ditelluride for sensitive room-temperature terahertz photodetection

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InfoMat 2023年第5期5卷 17-27页

作者： Zhuo Dong Wenzhi Yu Libo Zhang Liu Yang Luyi Huang Yan Zhang Zeqian Ren Haoran Mu Cheng Chen Junrong Zhang Jie Li Lin Wang Kai Zhang CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhouJiangsuthe People's Republic of China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefeiAnhuithe People's Republic of China Songshan Lake Materials Laboratory DongguanGuangdongthe People's Republic of China State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China

As the lastly unexplored electromagnetic wave,terahertz(THz)radiation has been exploited in a plenty of contexts such as fundamental research,military and civil *** recently,representative two-dimensional(2D)topological semimetal,platinum ditelluride(PtTe_(2))has attracted considerable research interest in THz detection due to its unique physical ***,to achieve practical applications,the low-cost,large-scale,controllable synthesis and efficient patterning of 2D materials are key requirements,which remain a challenge for PtTe_(2)and its photodetectors(PDs).Herein,a facile approach is developed to obtain waferscale(2-inches)patterned PtTe_(2)arrays using one-step tellurium-vapor transformation method and micro-Nano ***_(2)PD arrays are fabricated with the as-grown PtTe_(2)arrays evenly distributed on a 2-inch wafer,exhibiting high conductivity(~2.7×105 S m^(-1))and good electrical *** by the Dirac fermions,PtTe_(2)PDs achieve a broadband(0.02-0.3 THz)response with a fast response speed(~4.7μs),a high sensitivity(~47 pW Hz^(-1/2))and high-resolution transmission THz-imaging capability,which displays the potential of large-area THz array *** results are one step towards the practical applications of integrated PD arrays based on 2D materials.

关键词： patterned growth photodetection platinum ditelluride terahertz wafer-scale

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Flexible design of double-layer grating polarization response integrated on an InSb detector using an artificial neural network

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Optics Express 2025年第12期33卷 24361-24369页

作者： Mengcheng Li Ruiting Hao Gang Chen Wen Wang Pengcheng Sheng Jun Xu Jiatong Liu Huizi Li Yanhui Li Jun Zhao College of Energy and Environment Science Yunnan Normal University Kunming Yunnan Province 650500 China Southwest United Graduate School Kunming Yunnan Province 650092 China Aviation Key Laboratory of Science and Technology on Infrared Detector Henan Province 471009 China Kunming Institute of Physics Kunming Yunnan Province 650223 China junzhao80@***

On-chip integrated polarimetric detectors based on subwavelength gratings (SWGs) are demanding in terms of grating structure design. However, traditional trial-and-error strategies and design solutions are computationally expensive and labor-intensive for finding an optimal structure. Here, we construct an artificial neural network (ANN) to accelerate the spectral prediction and design of high-performance polarization detectors. It is shown that the proposed ANN can accelerate the design process and exhibit high accuracy, with the prediction process taking only 0.15 s and the coefficients of determination of all three outputs greater than 0.94. On-demand integral matching enables the design of the optimal structure in 300 s, a 10 4 -fold time improvement compared to finite-difference time-domain (FDTD). The identified structure has more than 87% TM transmittance and a 65 dB extinction ratio across the entire mid-wave band. The mean square error (MSE) loss values for both the training and testing sets are low, reaching 2.93 × 10 −2 and 3.02 × 10 −2 after 100 epochs. Our results have great potential to accelerate the on-demand design of integrated photonic devices.

关键词： Imaging systems infrared detectors Material properties Neural networks Photonic devices Thin films

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Photoelectric conversion of critically coupled quantum well devices in the strong coupling regime

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Hongwai Yu Haomibo Xuebao/Journal of infrared and Millimeter Waves 2025年第3期44卷 364-369页

作者： Song, Jian-Tao Ma, Shu-Huan Wang, Chen-Xiao Yang, Fan Chen, Zhi-Jian Yao, Bi-Mu School of Physical Science and Technology ShanghaiTech University Shanghai201210 China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China

To enhance the net photoelectric conversion efficiency of quantum well infrared photodetectors，this study investigates the matching conditions between radiative dissipation and coupling strength in devices operating in the strong light-matter coupling regime. A critical coupling model distinct from the conventional intrinsic and radiative dissipation matching is proposed. Through an analytical model，the contributions of intrinsic thermal dissipation and coupling strength to the critical conditions are quantified. The results indicate that，with optimized matching parameters，the net photoelectric absorption efficiency，excluding thermal dissipation，can exceed 95%. Moreover，under the synergistic regulation of the strong coupling mechanism and critical coupling conditions，the photodetection response can be enhanced by up to 160%. This work highlights the importance of optimizing dissipation and coupling parameters under strong coupling conditions，providing theoretical and design guidance for improving photoelectric conversion efficiency and enhancing the performance of quantum well infrared photodetectors. © 2025 Chinese Optical Society. All rights reserved.

关键词： Quantum well infrared photodetectors

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Generation of 12th order harmonic mode-locking in a Nd-doped single-mode all-fiber laser operating at 0.9μm

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Chinese Optics Letters 2023年第1期21卷 97-103页

作者：张斌李平刘兆军李明刘靖赵浩旭胡琼宇陈晓寒 Center for Optics Research and Engineering Key Laboratory of Laser&Infrared SystemMinistry of EducationShandong UniversityQingdao 266237China School of Information Science and Engineering Shandong Provincial Key Laboratory of Laser Technology and ApplicationShandong UniversityQingdao 266237China

Based on the Nd-doped single-mode fiber as the gain medium,an all-fiber 12th harmonic mode-locked(HML)laser operating at the 0.9μm waveband was obtained for the first time,to the best of our knowledge.A mandrel with a diameter of 10 mm was employed to introduce bending losses to suppress mode competition at 1.06μm,which resulted in a suppression ratio of up to 54 *** 1st–12th order HML pulses with the tunable repetition rate of 494.62 kHz–5.94 MHz were obtained in the mode-locked laser with a center wavelength of∼904 *** addition,the laser has an extremely low threshold pump power of 88 *** the best of our knowledge,this is the first time that an HML pulse has been achieved in a 0.9μm Nd-doped single-mode all-fiber mode-locked laser with the advantages of low cost,simple structure,and compactness,which could be an ideal light source for two-photon microscopy.

关键词： Nd-doped fiber laser harmonic mode-locking bending loss nonlinear polarization rotation low repetition rate

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