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Piezoelectric Materials Full-Matrix Constants Characterization Based on Local Electrodes Using One Sample

Journal of Shanghai Jiaotong university(science) 2025年第2期30卷 262-269页

作者： FENG Qiyun WU Xiaosheng ZHAO Junjun ZENG Zhaofeng LI Jian YIN Chengbin National Key Laboratory of Science and Technology on Micro/Nano Fabrication Department of Micro/Nano ElectronicsShanghai Jiao Tong UniversityShanghai 200240China

A novel characterization method for full-matrix constants of PzT-8 piezoceramics based on local electrodes excitation using one sample is proposed to avoid resonant peaks missing and overlapping in the inversion process of resonant ultrasound spectroscopy *** matrix,which is sensitive to the resonance spectrum,is obtained by resonant ultrasound *** and dielectric matrices,which are sensitive to the capacitance of driving electrodes,are determined by capacitance *** initial values of elastic constants are deviated by 30%to validate the reliability of this *** relative errors between measured and inversed values of resonant frequencies are less than 1%and the relative errors of the capacitance are mostly less than 5%.The work has extensive applications in piezoelectric materials characterization.

关键词： resonant ultrasound spectroscopy local electrodes capacitance inversion characterization

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Black-phosphorus-based junctions and their optoelectronic device applications

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nano Research 2023年第1期16卷 1651-1669页

作者： Kunchan Wang Zhuoyang He Xinyue Li Ke Xu Qingping Zhou Xiaowo Ye Teng Zhang Shenghao Jiang Yanming Zhang Bei Hu Changxin Chen National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong UniversityShanghai 200240China

Black phosphorus(BP)has attracted significant attention owing to its unique structure and preeminent photoelectric properties,which can be utilized to create novel *** on different BP-based junctions,versatile optoelectronic devices have been fabricated and investigated in recent years,providing a fertile library for the characteristics of BP-based junctions and their optoelectronic *** review summarizes diverse BP-based junctions and their optoelectronic device *** firstly introduce the structure and properties of ***,we emphatically describe the formation,properties,and optoelectronic device applications of the BP-based junctions including heterojunctions of BP and other two-dimensional(2D)semiconductors,BP p–n homojunctions,and BP/metal Schottky ***,the challenge and prospect of the development and application of BP-based junctions are *** timely review gives a snapshot of recent research breakthroughs in BP-based junctions and optoelectronic devices based on them,which is expected to provide a comprehensive vision for the potential of BP in the optoelectronic field.

关键词： black phosphorus(BP) optoelectronic device heterojunction p-n homojunction Schottky junction two-dimensional(2D)semiconductor

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Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

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science China(Information sciences) 2025年第6期68卷 198-203页

作者： Yinchi LIU Xun LU Shiyu LI Hao ZHANG Jining YANG Yeye GUO Dmitriy Anatolyevich GOLOSOV Chenjie GU Hongliang LU Zhigang JI Shijin DING Wenjun LIU School of Microelectronics Fudan University Shaoxin Laboratory Belarusian State University of Informatics and Radioelectronics School of Physical Science and Technology Ningbo University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong University

The ferroelectric field-effect transistor（FeFET） with an amorphous indium–gallium–zinc oxide（α-IGZO） channel and an atomic-layer-deposited 2 nm HfO2interfacial layer（IL） was designed and fabricated to optimize both memory window（MW） and reliability. Compared with the FeFET without IL, the FeFET with 2 nm HfO2IL achieved an enhanced MW of 1.1 V at a reliable operating voltage with ultrafast current-voltage operation and an approximately 1000 times improvement in endurance with an available MW of ～0.85 V after exerting pulses over 10～7 cycles while maintaining retention of over 10 years. This work proposes an effective strategy to enhance MW and reliability for future nonvolatile memory applications.

关键词： HfO$_2$ interfacial layer Hf$_{0.5}$Zr$_{0.5}$O$_2$ memory window reliability

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A monolithically integrated microcantilever biosensor based on partially depleted SOI CMOS technology

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microsystems & nanoengineering 2023年第3期9卷 273-283页

作者： Yi Liu Yuan Tian Cong Lin Jiahao Miao Xiaomei Yu School of Integrated Circuits Peking UniversityNational Key Laboratory of Science and Technology on Micro/Nano FabricationBeijing 100871China

This paper presents a monolithically integrated aptasensor composed of a piezoresistive microcantilever array and an on-chip signal processing *** microcantilevers,each of them embedded with a piezoresistor,form three sensors in a Wheatstone bridge *** on-chip signal processing circuit consists of a multiplexer,a chopper instrumentation amplifier,a low-pass filter,a sigma-delta analog-to-digital converter,and a serial peripheral *** the microcantilever array and the on-chip signal processing circuit were fabricated on the single-crystalline silicon device layer of a silicon-on-insulator(SOI)wafer with partially depleted(PD)CMOS technology followed by three micromachining *** integrated microcantilever sensor makes full use of the high gauge factor of single-crystalline silicon to achieve low parasitic,latch-up,and leakage current in the PD-SOI CMOS.A measured deflection sensitivity of 0.98×10^(−6) nm^(−1) and an output voltage fluctuation of less than 1μV were obtained for the integrated microcantilever.A maximum gain of 134.97 and an input offset current of only 0.623 nA were acquired for the on-chip signal processing *** functionalizing the measurement microcantilevers with a biotin-avidin system method,human IgG,abrin,and staphylococcus enterotoxin B(SEB)were detected at a limit of detection(LOD)of 48 pg/***,multichannel detection of the three integrated microcantilever aptasensors was also verified by detecting *** these experimental results indicate that the design and process of monolithically integrated microcantilevers can meet the requirements of high-sensitivity detection of biomolecules.

关键词： SOI amplifier cantilever

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Visual synapse based on reconfigurable organic photovoltaic cell

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Journal of Semiconductors 2025年第2期46卷 105-112页

作者： Xiangrong Pu Fan Shu Qifan Wang Gang Liu Zhang Zhang School of Microelectronics Hefei University of TechnologyHefei 230009China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong UniversityShanghai 200240China

The hierarchical and coordinated processing of visual information by the brain demonstrates its superior ability to min-imize energy consumption and maximize signal transmission ***,it is crucial to develop artificial visual synapses that integrate optical sensing and synaptic *** study fully leverages the excellent photoresponsivity proper-ties of the PM6:Y6 system to construct a vertical photo-tunable organic memristor and conducts in-depth research on its resis-tive switching performance,photodetection capability,and simulation of photo-synaptic behavior,showcasing its excellent per-formance in processing visual information and simulating neuromorphic *** device achieves stable and gradual resis-tance change,successfully simulating voltage-controlled long-term potentiation/depression(LTP/LTD),and exhibits various photo-electric synergistic regulation of synaptic ***,the device has successfully simulated the image percep-tion and recognition functions of the human visual nervous *** non-volatile Au/PM6:Y6/ITO memristor is used as an artificial synapse and neuron modeling,building a hierarchical coordinated processing SLP-CNN cascade neural network for visual image recognition training,its linear tunable photoconductivity characteristic serves as the weight update of the net-work,achieving a recognition accuracy of up to 93.4%.Compared with the single-layer visual target recognition model,this scheme has improved the recognition accuracy by 19.2%.

关键词： organic memristor visual synapse neuromorphic computing PM6:Y6 image recognition

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AlphaMat: a material informatics hub connecting data, features, models and applications

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npj Computational Materials 2023年第1期9卷 999-1007页

作者： Zhilong Wang An Chen Kehao Tao Junfei Cai Yanqiang Han Jing Gao Simin Ye Shiwei Wang Imran Ali Jinjin Li National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong UniversityShanghai 200240China Key Laboratory of Thin Film and Microfabrication of Ministry of Education Department of Micro/Nano ElectronicsShanghai Jiao Tong UniversityShanghai 200240China

The development of modern civil industry,energy and information technology is inseparable from the rapid explorations of new ***,only a small fraction of materials being experimentally/computationally studied in a vast chemical *** intelligence(AI)is promising to address this gap,but faces many challenges,such as data scarcity and inaccurate material ***,we develop an AI platform,AlphaMat,that can complete data preprocessing and downstream AI *** high efficiency and accuracy,AlphaMat exhibits strong powers to model typical 12 material attributes(formation energy,band gap,ionic conductivity,magnetism,bulk modulus,etc.).AlphaMat’s capabilities are further demonstrated to discover thousands of new materials for use in specific *** does not require users to have strong programming experience,and its effective use will facilitate the development of materials informatics,which is of great significance for the implementation of AI for science(AI4S).

关键词： Alpha connecting programming

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Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector

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nano Research 2024年第3期17卷 1856-1863页

作者： Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum ***,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical ***,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)*** In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) *** laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.

关键词： transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure photodetector ultrahigh responsivity

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Space-to-ground infrared camouflage with radiative heat dissipation

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光：科学与应用（英文版） 2025年第5期14卷 1410-1419页

作者： Bing Qin Huanzheng Zhu Rongxuan Zhu Meng Zhao Min Qiu Qiang Li State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringZhejiang UniversityHangzhou 310027China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of EngineeringWestlake UniversityHangzhou 310024China

With the development of space exploration and exploitation,it is imperative to address the potential threats posed to space objects,particularly ground-based infrared ***,in the extreme space environment,achieving infrared camouflage across different bands with simultaneous thermal management is challenging and has so far slipped out of ***,we propose the space-to-ground infrared camouflage strategy,compatible with radiative heat *** in the H,K,mid-wave-infrared(MWIR),and long-wave-infrared(LWIR)bands is achieved through a multilayer structure,with radiative heat dissipation in the very-long-wave-infrared(VLWIR)*** absorptivity(0.839/0.633)in the H/K bands minimizes the reflected signal of solar radiation and low emissivity(0.132/0.142)in the MWIR/LWIR bands suppresses the thermal radiation ***,high emissivity(0.798)in the VLWIR band ensures efficient thermal management,resulting in a temperature decrement of 39.8 ℃ to the metal reference in the simulated space environment(with 1200Wm-2 thermal input).This work inspires sophisticated spectral manipulation in extreme environments and guides the development of camouflage and radiative heat dissipation techniques for space objects.

关键词： infrared with camouflage dissipation heat radiative space-to-ground

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Deep Learning Accelerates the Discovery of Two- Dimensional Catalysts for Hydrogen Evolution Reaction

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Energy & Environmental Materials 2023年第1期6卷 138-144页

作者： Sicheng Wu Zhilong Wang Haikuo Zhang Junfei Cai Jinjin Li National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong UniversityShanghai 200240China Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

Two-dimensional materials with active sites are expected to replace platinum as large-scale hydrogen production ***,the rapid discovery of excellent two-dimensional hydrogen evolution reaction catalysts is seriously hindered due to the long experiment cycle and the huge cost of high-throughput calculations of adsorption *** that the traditional regression models cannot consider all the potential sites on the surface of catalysts,we use a deep learning method with crystal graph convolutional neural networks to accelerate the discovery of high-performance two-dimensional hydrogen evolution reaction catalysts from two-dimensional materials database,with the prediction accuracy as high as 95.2%.The proposed method considers all active sites,screens out 38 high performance catalysts from 6,531 two-dimensional materials,predicts their adsorption energies at different active sites,and determines the potential strongest adsorption *** prediction accuracy of the two-dimensional hydrogen evolution reaction catalysts screening strategy proposed in this work is at the density-functional-theory level,but the prediction speed is 10.19 years ahead of the high-throughput screening,demonstrating the capability of crystal graph convolutional neural networks-deep learning method for efficiently discovering high-performance new structures over a wide catalytic materials space.

关键词： crystal graph convolutional neural network deep learning hydrogen evolution reaction two-dimensional(2D)material

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Improving the energy efficiency of surface dielectric barrier discharge devices for plasma nitric oxide conversion utilizing active flow control

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Chinese Journal of Chemical Engineering 2023年第1期53卷 270-279页

作者： An Wang Zhongyu Hou National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong UniversityShanghai 200240China Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

Improving energy efficiency in plasma NO removal is a critical *** the surface dielectric barrier discharge(SDBD)device is considered as a combination of multiple plasma actuators,the induced plasma aerodynamic effect cannot be ignored,which can affect the mass transfer,then affect the chemical *** SDBD devices with different electrode arrangements are studied for NO *** correspond to different flow *** find that the energy efficiency in an SDBD device with a common structure(Type 1)is 28%lower than that in SDBD devices with a special arrangement(Types 2–5).Two reasons may explain the ***,fewer active species are produced in Type 1 because the development of discharge is hindered by the mutually exclusive electric field forces caused by the symmetrically distributed charged ***,the plasma wind induced by the plasma actuator can enhance the mass and heat *** mixing of reactants and products is better in Types 2–5 than Type 1 due to higher turbulence kinetic energy.

关键词： Flue gas Radical Oxidation Surface dielectric barrier discharge(SDBD) Plasma aerodynamic effect Plasma NO conversion

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