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Observation of multiple surface states in naturally cleavable chiral crystal PdSbSe

Physical Review Materials 2025年第3期9卷 L031201-L031201页

作者： Zhicheng Jiang Zhengtai Liu Chenqiang Hua Xiangqi Liu Yichen Yang Jianyang Ding Jiayu Liu Jishan Liu Mao Ye Shanghai Synchrotron Radiation Facility Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201210 China National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology University of Science and Technology of China Hefei 230026 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences Shanghai 200050 China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of Physics Zhejiang University Hangzhou 310027 China State Key Lab of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China Beihang Hangzhou Innovation Institute Yuhang Xixi Octagon City Yuhang District Hangzhou 310023 China School of Physical Science and Technology ShanghaiTech University Shanghai 200031 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Chiral multifold fermions in solids exhibit unique band structures and topological properties, making them ideal for exploring fundamental physical phenomena related to nontrivial topology, chirality, and symmetry breaking. However, the challenge of obtaining clean, flat surfaces through cleavage has hindered the investigation of their unique electronic states. In this study, we utilize high-resolution angle-resolved photoemission spectroscopy and density functional theory calculations to investigate the low-energy electronic structure of the cleavable single-crystal PdSbSe. Our combined experimental and theoretical analysis reveals the presence of multifold-degenerate fermions within this chiral crystal. We also observe multiple chiral Fermi arc surface states and spin-splitting behavior in the associated bulk bands. These findings provide unique insights into chiral, multifold fermionic states in easily cleavable crystals and offer a robust platform for further research into their unique electronic properties and potential applications in novel electronic devices.

关键词： Photoelectron spectroscopy

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Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

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Chinese Physics B 2016年第7期25卷 546-552页

作者：解冰清李博毕津顺卜建辉吴驰李彬鸿韩郑生罗家俊 Key Laboratory of Silicon Device and Technology Institute of Microelectronics Chinese Academy of Sciences

The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator（SOI） metaloxide-silicon（MOS） field-effect-transistors（FETs） were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.

关键词： cryogenic temperature metal-oxide-semiconductor silicon-on-insulator capacitance

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Superjunction nanoscale partially narrow mesa IGBT towards superior performance

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Chinese Physics B 2017年第3期26卷 582-587页

作者：喻巧群陆江刘海南罗家俊李博王立新韩郑生 Institute of Microelectronics of Chinese Academy of Science Key Laboratory of Silicon Device Technology Chinese Academy of Sciences Beijing 100029 China

We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage （Vce（sat）） and low turn-off loss （Eoff） while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce（sat） of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce（sat） and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering （CIBL） effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.

关键词： insulated gate bipolar transistor (IGBT) partially narrow mesa (PNM) superjunction (S J) turn-offloss

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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

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Chinese Physics B 2017年第9期26卷 335-340页

作者：郑齐文崔江维刘梦新苏丹丹周航马腾余学峰陆妩郭旗赵发展 Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics and ChemistryChinese Academy of Sciences Xinjiang Key Laboratory of Electronic Information Material and Device Key Laboratory of Silicon Device Technology Chinese Academy of Sciences University of Chinese Academy of Sciences

In this work, the total ionizing dose（TID） effect on 130 nm partially depleted（PD） silicon-on-insulator（SOI） static random access memory（SRAM） cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin（SNM） is specifically designed and irradiated by gamma-ray. Both data sides＇ SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side＇s SNM is decreased and the other data side＇s SNM is increased. Moreover, measurement of SNM under different supply voltages（Vdd） reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention Vddshould be tested, because Vddof SRAM cell under data retention mode is lower than normal *** mechanism under the above results is analyzed by measurement of I–V characteristics of SRAM cell transistors.

关键词： silicon-on-insulator total ionizing dose static random access memory static noise margin

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Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

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Chinese Physics B 2017年第8期26卷 444-449页

作者：崔岩杨玲高腾李博罗家俊 Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Silicon Device and Technology Chinese Academy of SciencesBeijing 100029China

The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.

关键词： magnetoresistive random-access memories total ionizing dose effect magnetic tunneling junction magnetic Compton scattering effect

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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

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Chinese Physics B 2017年第9期26卷 520-525页

作者：闫薇薇高林春李晓静赵发展曾传滨罗家俊韩郑生 Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Silicon Device Technology Chinese Academy of SciencesBeijing 100029China

In this study, we investigate the single-event transient（SET） characteristics of a partially depleted silicon-on-insulator（PDSOI） metal-oxide-semiconductor（MOS） device induced by a pulsed *** measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI *** use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor（p-BJT） effect by performing both a laser test and simulations.

关键词： single-event transient pulsed laser parasitic bipolar junction transistor partially depleted silicon on insulator

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Observation of multiple surface states in naturally cleavable chiral crystal PdSbSe

arXiv

引用

arXiv 2025年

作者： Jiang, Zhicheng Liu, Zhengtai Hua, Chenqiang Liu, Xiangqi Yang, Yichen Ding, Jianyang Liu, Jiayu Liu, Jishan Ye, Mao Dai, Ji Tallarida, Massimo Guo, Yanfeng Lu, Yunhao Shen, Dawei Shanghai Synchrotron Radiation Facility Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai201210 China National Synchrotron Radiation Laboratory School of Nuclear Science and Technology University of Science and Technology of China Hefei230026 China Chinese Academy of Sciences Shanghai200050 China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of Physics Zhejiang University Hangzhou310027 China State Key Lab of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Beihang Hangzhou Innovation Institute Yuhang Xixi Octagon City Yuhang District Hangzhou310023 China School of Physical Science and Technology ShanghaiTech University Shanghai200031 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China ALBA Synchrotron Light Source Barcelona08290 Spain

Chiral multifold fermions in solids exhibit unique band structures and topological properties, making them ideal for exploring fundamental physical phenomena related to nontrivial topology, chirality, and symmetry breaking. However, the challenge of obtaining clean, flat surfaces through cleavage has hindered the investigation of their unique electronic states. In this study, we utilize high-resolution angle-resolved photoemission spectroscopy and density functional theory calculations to investigate the low-energy electronic structure of the cleavable single-crystal PdSbSe. Our combined experimental and theoretical analysis reveals the presence of multifold degenerate fermions within this chiral crystal. We also observe multiple chiral Fermi arc surface states and spin-splitting behavior in the associated bulk bands. These findings provide unique insights into chiral, multifold fermionic states in easily cleavable crystals and offer a robust platform for further research into their unique electronic properties and potential applications in novel electronic devices. © 2025, CC BY.

关键词： Fermions

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Topology and ferroelectricity in group-V monolayers

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Chinese Physics B 2020年第5期29卷 1-12页

作者： Mutee Ur Rehman Chenqiang Hua Yunhao Lu State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of PhysicsZhejiang UniversityHangzhou 310027China

The group-V monolayers(MLs)have been studied intensively after the experimental fabrication of two-dimensional(2D)graphene and black *** observation of novel quantum phenomena,such as quantum spin Hall effect and ferroelectricity in group-V elemental layers,has attracted tremendous attention because of the novel physics and promising applications for nanoelectronics in the 2D *** this review,we comprehensively review recent research progress in engineering of topology and ferroelectricity,and several effective methods to control the quantum phase transition are *** then introduce the coupling between topological orders and ferroelectric *** research directions and outlooks are discussed at the end of the *** is expected that the comprehensive overview of topology and ferroelectricity in 2D group-V materials can provide guidelines for researchers in the area and inspire further explorations of interplay between multiple quantum phenomena in low-dimensional systems.

关键词： topology ferroelectricity two-dimensional material group-V element

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Back-side stress to ease p-MOSFET degradation on e-MRAM chips

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Chinese Physics B 2024年第12期33卷 482-486页

作者： Zhi-Meng Yu Xiao-Lei Yang Xiao-Nan Zhao Yan-Jie Li Shi-Kun He Ye-Wu Wang Department of Physics Zhejiang Province Key Laboratory of Quantum Technology and Device&State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Zhejiang Hikstor Technology Co. Ltd.Hangzhou 311300China

The magnetoresistive random access memory process makes a great contribution to threshold voltage deterioration of metal-oxide-silicon field-effect transistors,especially on p-type ***,a method was proposed to reduce the threshold voltage degradation by utilizing back-side *** the deposition of tensile material on the back side,positive charges generated by silicon-hydrogen bond breakage were inhibited,resulting in a potential reduction in threshold voltage shift by up to 20%.In addition,it was found that the method could only relieve silicon-hydrogen bond breakage physically,thus failing to provide a complete ***,it holds significant potential for applications where additional thermal budget is ***,it was also concluded that the method used in this work is irreversible,with its effect sustained to the chip package phase,and it ensures competitive reliability of the resulting magnetic tunnel junction devices.

关键词： back-side stress metal-oxide-silicon field-effect transistor(MOSFET) magnetoresistive random access memory(MRAM) threshold voltage

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Analysis and optimization of Tunneling-FET based on SOI 13

Analysis and optimization of Tunneling-FET based on SOI

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Li Ying Bu Jianhui Luo Jiajun Han Zhengsheng Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Silicon Device Technology Chinese Academy of Sciences

ISBN: (纸本)9781467397209

In this paper, we optimized a heterojunction SOI-TFET with high-k dielectric overlap on Si Ge-source region. Mole fraction(x) of the Si(x)Ge(1-x) has an important influence in the performance of the TFET. The optimized device has achieved 50.9mV /decades SS, which breaks the 60 m V/decades SS barrier. It has realized 10～7 Ion/Ioff ratios and the OFF-state leakage current can be lowed to 10-14 A/μm level. The ON-state drain current can reach 10-6A/μm at VDS=0.3V and the device works well at VDS=0.2V. The proposed device is optimized using 2D Synopsys TCAD simulation.

关键词： silicon-on-insulator Tunnel-FET silicon-Germanium subthreshold swing

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