检索结果-内蒙古大学图书馆

arXiv 2021年

作者： Qiao, Lei Wu, Ning-Hua Li, Tianhao Wu, Siqi Zhang, Zhuyi Li, Miaocong Ma, Jiang Lv, Baijiang Li, Yupeng Xu, Chenchao Tao, Qian Cao, Chao Cao, Guang-Han Xu, Zhu-An Zhejiang Province Key Laboratory of Quantum Technology and Device Department of Physics Zhejiang University Hangzhou310027 China Key Laboratory of Neutron Physics Institute of Nuclear Physics and Chemistry China Academy of Engineering Physics Mianyang621999 China Department of Physics Hangzhou Normal University Hangzhou310036 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou310027 China

We investigated the coexistence of superconductivity and antiferromagnetic order in the compound Er2O2Bi with anti-ThCr2Si2-type structure through resistivity, magnetization, specific heat measurements and first-principle calculations. The superconducting transition temperature Tcof 1.23 K and antiferromagnetic transition temperature TNof 3 K are observed in the sample with the best nominal composition. The superconducting upper critical field Hc2(0) and electron-phonon coupling constant λe-phin Er2O2Bi are similar to those in the previously reported non-magnetic superconductor Y2O2Bi with the same structure, indicating that the superconductivity in Er2O2Bi may have the same origin as in Y2O2Bi. The first-principle calculations of Er2O2Bi show that the Fermi surface is mainly composed of the Bi 6p orbitals both in the paramagnetic and antiferromagnetic state, implying minor effect of the 4f electrons on the Fermi surface. Besides, upon increasing the oxygen incorporation in Er2OxBi, Tcincreases from 1 to 1.23 K and TNdecreases slightly from 3 to 2.96 K, revealing that superconductivity and antiferromagnetic order may compete with each other. The Hall effect measurements indicate that hole-type carrier density indeed increases with increasing oxygen content, which may account for the variations of Tcand TNwith different oxygen content. Copyright © 2021, The Authors. All rights reserved.

关键词： Superconducting transition temperature

来源：评论

学校读者我要写书评

暂无评论

Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal

arXiv

引用

arXiv 2022年

作者： Du, Feng Yang, Lin Nie, Zhiyong Wu, Ninghua Li, Yong Luo, Shuaishuai Chen, Ye Su, Dajun Smidman, Michael Shi, Youguo Cao, Chao Steglich, Frank Song, Yu Yuan, Huiqiu Center For Correlated Matter Department Of Physics Zhejiang University Hangzhou310058 China College Of Materials And Environmental Engineering Hangzhou Dianzi University Hangzhou310018 China Beijing National Laboratory For Condensed Matter Physics Institute Of Physics Chinese Academy Of Sciences Beijing100190 China Zhejiang Province Key Laboratory Of Quantum Technology And Device Department Of Physics Zhejiang University Hangzhou310058 China Max Planck Institute For Chemical Physics Of Solids Dresden01187 Germany State Key Laboratory Of Silicon Materials Zhejiang University Hangzhou310058 China

The combination of magnetic symmetries and electronic band topology provides a promising route for realizing topologically nontrivial quasiparticles, and the manipulation of magnetic structures may enable the switching between topological phases, with the potential for achieving functional physical properties. Here, we report measurements of the electrical resistivity of EuCd2As2under pressure, which show an intriguing insulating dome at pressures between pc1∼ 1.0 GPa and pc2∼ 2.0 GPa, situated between two regimes with metallic transport. The insulating state can be fully suppressed by a small magnetic field, leading to a colossal negative magnetoresistance on the order of 105%, accessible via a modest field of ∼ 0.2 T. First-principles calculations reveal that the dramatic evolution of the resistivity under pressure is due to consecutive transitions of EuCd2As2from a magnetic topological insulator to a trivial insulator, and then to a Weyl semimetal, with the latter resulting from a pressure-induced change in the magnetic ground state. Similarly, the colossal magnetoresistance results from a field-induced polarization of the magnetic moments, transforming EuCd2As2from a trivial insulator to a Weyl semimetal. These findings underscore weak magnetic exchange couplings and spin anisotropy as ingredients for discovering tunable magnetic topological materials with desirable functionalities. Copyright © 2022, The Authors. All rights reserved.

关键词： Ground state

来源：评论

学校读者我要写书评

暂无评论

Emergence of high-temperature superconductivity at the interface of two Mott insulators

引用

Physical Review B 2022年第2期105卷 024516-024516页

作者： Lele Ju Tianshuang Ren Zhu Li Zhongran Liu Chuanyu Shi Yuan Liu Siyuan Hong Jie Wu He Tian Yi Zhou Yanwu Xie Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation and Zhejiang Province Key Laboratory of Quantum Technology and Device Department of Physics Zhejiang University Hangzhou 310027 China Center of Electron Microscope State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China Key Laboratory for Quantum Materials of Zhejiang Province School of Science Westlake University Hangzhou 310024 China Institute of Natural Sciences Westlake Institute for Advanced Study Hangzhou 310024 China School of Physics and Microelectronics Zhengzhou University Zhengzhou 450052 China Beijing National Laboratory for Condensed Matter Physics & Institute of Physics Chinese Academy of Sciences Beijing 100190 China Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China Kavli Institute for Theoretical Sciences and CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing 100190 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator–band insulator, band insulator–Mott insulator, and Mott insulator–metal. We report the observation of high-temperature superconductivity (HTS) in a complementary and long-expected type of heterostructures, which consists of two Mott insulators, La2CuO4 (LCO) and PrBa2Cu3O7 (PBCO). By carefully controlling oxidization condition and selectively doping CuO2 planes with Fe atoms, which suppress superconductivity, we found that the superconductivity arises at the LCO side and is confined within no more than two unit cells (∼2.6 nm) near the interface. A phenomenon of “overcome the Fe barrier” will show up if excess oxygen is present during growth. Some possible mechanisms for the interfacial HTS have been discussed, and we attribute HTS to the redistribution of oxygen.

关键词： Impurities in superconductors Mott-superfluid transition Superconducting phase transition Cuprates Heterostructures Interfaces Thin films Film deposition

来源：评论

学校读者我要写书评

暂无评论

Infrared Light-Emitting devices from Antenna-Coupled Luttinger Liquid Plasmons In Carbon Nanotubes

引用

Physical Review Letters 2021年第25期127卷 257702-257702页

作者： SeokJae Yoo Sihan Zhao Feng Wang Department of Physics University of California at Berkeley Berkeley California 94720 USA Department of Physics Inha University Incheon 22212 Korea Interdisciplinary Center for Quantum Information Zhejiang Province Key Laboratory of Quantum Technology and Device State Key Laboratory of Silicon Materials and Department of Physics Zhejiang University Hangzhou 310027 China Materials Science Division Lawrence Berkeley National Laboratory Berkeley California 94720 USA Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory Berkeley California 94720 USA

Electrically driven light-emitting devices provide highly energy-efficient lighting at visible wavelengths, and they have transformed photonic and electronic lighting applications. Efficient infrared light-emitting devices, however, have been challenging because band gap emission from semiconductors becomes inefficient in the mid-infrared to far-infrared spectral range. Here we investigate infrared light-emitting devices (IRLEDs) based on Luttinger liquid (LL) plasmons in one-dimensional (1D) metallic carbon nanotubes. Elementary excitations in LL are characterized by collective charge and spin excitations, i.e., plasmons and spinons. Consequently, electrons injected into the nanotubes transform efficiently into LL plasmons, a hybrid excitation of electromagnetic fields and electrons. We design nanoantennas coupled to the carbon nanotube to radiate LL plasmons into the far field. LL-based IRLEDs can be designed to selectively emit at wavelengths across the far- and mid-infrared spectra. An electrical-to-optical power conversion efficiency up to 3.2% may be achieved. Such efficient and narrowband LL-based IRLEDs can enable novel infrared nanophotonic applications.

关键词： Nanophotonics Plasma interactions with antennas Plasmonics Surface plasmons Liquid-liquid interfaces Luttinger liquid model

来源：评论

学校读者我要写书评

暂无评论

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

引用

Journal of Semiconductors 2021年第11期42卷 18-25页

作者： Xiaorui Zhang Huiping Zhu Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao Dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Chemistry City University of Hong KongHong Kong 999077China

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer ***,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation ***,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/*** negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide *** stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is ***,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet *** analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

关键词： SWCNT FETs low-energy proton irradiation radiation effects electrical performance TID effect displacement damage effect simulation

来源：评论

学校读者我要写书评

暂无评论

Full superconducting gap and type-I to type-II superconductivity transition in single crystalline NbGe2

引用

Physical Review B 2021年第21期103卷 214508-214508页

作者： Dongting Zhang Tian Le Baijiang Lv Lichang Yin Chufan Chen Zhiyong Nie Dajun Su Huiqiu Yuan Zhu-An Xu Xin Lu Center for Correlated Matter and Department of Physics Zhejiang University Hangzhou 310058 China Department of Physics Zhejiang University Hangzhou 310027 China Zhejiang Province Key Laboratory of Quantum Technology and Device Zhejiang University Hangzhou 310027 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310027 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China Zhejiang California International NanoSystems Institute Zhejiang University Hangzhou 310058 China

We report a mechanical point-contact spectroscopy study on the single crystalline NbGe2 with a superconducting transition temperature Tc=2.0–2.1 K. The differential conductance curves at 0.3 K can be well fitted by a single-gap s-wave Blonder-Tinkham-Klapwijk model and the temperature-dependent gap follows a standard Bardeen-Cooper-Schrieffer behavior, yielding Δ0∼0.32 meV and 2Δ0/kBTc=3.62 in the weak-coupling limit. In magnetic field, the superconducting gap at 0.3 K remains constant up to Hc1∼150 Oe and gradually decreases until Hc2∼350 Oe, indicating NbGe2 is going through a transition from a type-I to type-II (possible type-II/1) superconductor at low temperature.

关键词： Superconducting gap Topological superconductors Andreev point contact spectroscopy

来源：评论

学校读者我要写书评

暂无评论

NbReSi: A noncentrosymetric superconductor with large upper critical field

引用

Physical Review Materials 2021年第11期5卷 114802-114802页

作者： H. Su T. Shang F. Du C. F. Chen H. Q. Ye X. Lu C. Cao M. Smidman H. Q. Yuan Center for Correlated Matter and Department of Physics Zhejiang University Hangzhou 310058 China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of Physics Zhejiang University Hangzhou 310058 China Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200241 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China Condensed Matter Group Department of Physics Hangzhou Normal University Hangzhou 311121 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310058 China

We report the discovery of superconductivity in noncentrosymmetric NbReSi, which crystallizes in a hexagonal ZrNiAl-type crystal structure with space group P6¯2m (No. 189). Bulk superconductivity, with Tc=6.5K was characterized via electrical-resistivity, magnetization, and heat-capacity measurements. The low-temperature electronic specific heat suggests a fully gapped superconducting state in NbReSi, while a large upper critical field of μ0Hc2(0)∼12.6 T is obtained, which is comparable to the weak-coupling Pauli limit. The electronic band-structure calculations show that the density of states at the Fermi level are dominated by Re and Nb d orbitals, with a sizable band splitting induced by the antisymmetric spin-orbit coupling. NbReSi represents another candidate material for revealing the puzzle of time-reversal symmetry breaking observed in some Re-based superconductors and its relation to the lack of inversion symmetry.

关键词： Superconductivity Noncentrosymmetric materials Superconductors Density functional theory Resistivity measurements Specific heat measurements

来源：评论

学校读者我要写书评

暂无评论

Pseudo-MOSFET transient behavior: experiments, model, substrate and temperature effect

Pseudo-MOSFET transient behavior: experiments, model, substr...

引用

International Conference on Ultimate Integration of silicon, ULIS

作者： X. Zhang FY. Liu BH. Li JJ. Luo ZS. Han M. Arsalan J. Wan S. Cristoloveanu Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China Key Laboratory of Silicon Device and Technology State key lab of ASIC and System Fudan University Shanghai China

ISBN: (数字)9781728187655

ISBN: (纸本)9781728187662

A theoretical model is proposed to characterize the transient operation of Pseudo-MOSFET under gate pulses by considering the substrate effect. The analysis provides Zerbst-like expression of drain current with substrate biased in high frequency deep-depletion state. The model can be used for the extraction of carrier lifetime. The dependence of temperature on carrier lifetime was also modeled by including the temperature-dependent parameters (intrinsic carrier concentration and effective mobility). TCAD simulations and experiments validate our model with the temperature ranging from 300 K to 350 K.

关键词： Temperature distribution Temperature dependence Data models Numerical models Transient analysis Charge carrier lifetime Substrates

来源：评论

学校读者我要写书评

暂无评论

Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure

arXiv

引用

arXiv 2022年

作者： Xie, W. Du, F. Zheng, X.Y. Su, H. Nie, Z.Y. Liu, B.Q. Xia, Y.H. Shang, T. Cao, C. Smidman, Michael Takabatake, T. Yuan, H.Q. Center for Correlated Matter School of Physics Zhejiang University Hangzhou310058 China Notkestrasse 85 Hamburg22607 Germany Key Laboratory of Neutron Physics Institute of Nuclear Physics and Chemistry CAEP Mianyang621900 China School of Physics and Electronic Science East China Normal University Shanghai200241 China Department of Quantum Matter AdSE Hiroshima University Higashi-Hiroshima739-8530 Japan Zhejiang Province Key Laboratory of Quantum Technology and Device School of Physics Zhejiang University Hangzhou310058 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou310058 China Collaborative Innovation Center of Advanced Microstructures Nanjing210093 China

We have synthesized YbPdAs with the hexagonal ZrNiAl-type structure, in which the Yb-atoms form a distorted kagome sublattice in the hexagonal basal plane. Magnetic, transport, and thermodynamic measurements indicate that YbPdAs is a low-carrier Kondo lattice compound with an antiferromagnetic transition at TN = 6.6 K, which is slightly suppressed in applied magnetic fields up to 9 T. The magnetic entropy at TN recovers only 33% of R ln 2, the full entropy of the ground state doublet of the Yb-ions. The resistivity displays a − ln T dependence between 30 and 15 K, followed by a broad maximum at Tcoh = 12 K upon cooling. Below Tcoh, the magnetoresistance changes from negative to positive, suggesting a crossover from single-ion Kondo scattering processes at intermediate temperatures to coherent Kondo lattice behaviors at low temperatures. Both the Hall resistivity measurements and band structure calculations indicate a relatively low carrier concentration in YbPdAs. Our results suggest that YbPdAs could provide an opportunity for examining the interplay of Kondo physics and magnetic frustration in low carrier systems. Copyright © 2022, The Authors. All rights reserved.

关键词： Entropy

来源：评论

学校读者我要写书评

暂无评论

Unveiling the hybridization process in a quantum critical ferromagnet by ultrafast optical spectroscopy

引用

Physical Review B 2021年第18期103卷 L180409-L180409页

作者： Y. H. Pei Y. J. Zhang Z. X. Wei Y. X. Chen K. Hu Yi-feng Yang H. Q. Yuan J. Qi State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 611731 China Center for Correlated Matter and Department of Physics Zhejiang University Hangzhou 310058 China Institute for Advanced Materials Hubei Normal University Huangshi 435002 China Institute of Electronic and Information Engineering University of Electronic Science and Technology of China Dongguan 523808 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Science Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China Songshan Lake Materials Laboratory Dongguan 523808 China State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310058 China Zhejiang Province Key Laboratory of Quantum Technology and Device Department of Physics Zhejiang University Hangzhou 310058 China

We report the ultrafast optical pump-probe spectroscopy measurements on the recently discovered quantum critical ferromagnet CeRh6Ge4. Our experimental results reveal the two-stage development of the hybridization between localized f moments and conduction electrons with lowering temperature, as evidenced by (1) the presence of hybridization fluctuation for temperatures from ∼85K (T*) to ∼140K (T†), and (2) the emergence of collective hybridization below the coherence temperature, T*, marked by the opening of an indirect gap of 2Δ≈12meV. We also observe three coherent phonon modes being softened anomalously below T*, reflecting directly their coupling with the emergent coherent heavy electrons. Our findings establish the universal nature of fluctuation and coherence during the hybridization process in heavy fermion systems.

关键词： Kondo effect Phase transitions Phonons Strongly correlated systems Pump-probe spectroscopy

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：