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Simulation Study on Electrothermal and Mechanical Coupling of Bumps in 5×5 Micro-LED Array

Simulation Study on Electrothermal and Mechanical Coupling o...

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhu Yang Hao Fu Kefeng Wang Xiaoxiao Ji Liang Chen Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

As a frontier research field of next-generation display technology, Micro-LED technology has the advantages of high brightness, high contrast and high energy efficiency. With the development trend of high-power, multi-array LEDs, the research on thermal stability of LEDs is gradually deepened. In order to explore the thermal stability of bumps during the working of Micro-LED, COMSOL Multiphysics simulation software and finite element method were used to analyze the electrothermal and mechanical coupling of bumps in 5×5 Micro-LED array in this paper. Flip-chip bonding was employed for interconnection of Micro-LED array and Si driver chip with the gap except Micro-LED devices between sapphire and silicon substrate filled with underfill to alleviate the stress concentration. The effects of different filling materials, applied current densities, and dimensions of In bumps (cylindrical) on thermal stress and displacement of the Micro-LED array were analyzed in detail. The results show the stress and displacement of the bumps with polyimide (PI) underfill were the smallest than that of bumps with benzocyclobutene (BCB) and epoxy resin (EP) underfill. Additionally, the temperature, thermal stress, and displacement of the bumps were also affected by the applied current density and the size of the bumps.

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High-performance,large-area perovskite light-emitting diodes

High-performance,large-area perovskite light-emitting diodes

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第10届亚洲和澳大利亚真空与表面科学会议、中国真空学会2021学术年会、第十五届国际真空科学与工程应用学术会议

作者： Lin Wang Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University

Metal halide perovskites based light-emitting diodes (PeLEDs) have attracted extensive attention for lighting and display applications because of their excellent advantages,such as narrow emission bandwidth,color tuna... 详细信息

关键词： metal halide perovskite light-emitting diodes large-area

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High-Performance Stable Hybrid Inorganic-Organic Light-Emitting

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SmartMat 2025年第1期6卷 195-202页

作者： Huixue HuangI Zhagen Miao?|Haikuo Gao I Jin Cao|Yanqiong ZhengI Can Gao?|Xifeng Li|Guangcai Yuan+Huani Dong D Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghaiChina I 2Bejing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBejingChina I 3shandong Engineering Research Center of Aeronautical Materials and DevicesCollege of Aeronautical EngineeringShandong University of AeronauticsBinzhouChina I 4BOE Technology Group Co.Ltd.BeijingChina

Light-emitting transistors(LETs)as novel integrated optoelectronic devices demonstrate great potential applications in smart displays and visual intelligent *** construction of high-performance area-emission LETs with low power con-sumption and good reliability is urgently needed for advancing their applications,however,this integration has not been realized within a single ***,we demonstrate a kind of planar-driven hybrid LET(PDHLET)that makes use of the unique advantages of high mobility and stability of inorganic and organic semiconductors in the same *** incorporating an indium-zinc-gallium-oxide(InZnGeO)conducting layer and organic emissive layer,a high-performance stable blue-emissive PDHLET is constructed,giving a high Ion/lofr ratio approaching 6.1×10°and a low Von of 5.5 V along with maximum brightness of 1264 cd/m?as well as small Vrh shift of 0.5V after 1000s positive stress ***,a systematic simulation,including charge concentration and Langevin recombination rate,is carried out on PDHLET for the first time,demonstrating good consistency with experimental *** confirms the uniformity of high redistributed charge concentration in the InZnGeO conducting layer which thus enables good area *** study provides a new avenue for constructing high-performance stable LETs toadvancevarious field applications.

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Thermodynamic Analysis of Multi-Stage Thermal Compression Bonding for Fabricating Vertically Stacked Micro-Led Array

Thermodynamic Analysis of Multi-Stage Thermal Compression Bo...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lianyu Wang Kailin Ren Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Vertical full-color Micro-LEDs based on flip-chip bonding technology are of great significance in high-resolution display applications, as they have many advantages such as high pixel density, high brightness, and wide color gamut. However, the construction of vertical full-color Micro-LEDs requires multiple thermal compression bonding (TCB). Therefore, thermal stress analysis during multiple TCB is necessary. In this work, the surface thermal stress of a 5×5 vertical Micro-LED array during multi-stage TCB is studied by finite element method (FEM) simulations. The stresses at LED-LED bonding interface and stacked LED-backplane bonding interface as well as the interactions between the two bondings are investigated. The results of different bonding temperatures, material combinations, and interconnected metal diameters and depths on the mean stresses at the bonding interface are analyzed, and then the adequacy of bonding and risk of debonding are assessed. The results show that among the hybrid bonding material combinations set in the simulation, the Cu/ Al 2 O 3 has the largest interfacial stress. In addition, decreasing the interconnected metal diameter and lowering the bonding temperature can relieve the interfacial stress, while the interconnected metal depth has no significant effect on the bonding stress. The key advantage of this work is that it can help establish design and process guidelines to shorten the development cycle of vertical full-color Micro-LEDs based on flip-chip bonding technology.

关键词： Thermodynamics Photonic band gap Metals Thermal analysis Finite element analysis Flip-chip devices Bonding Stress Thermal stresses Guidelines

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Monolithically Integrated Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Monolithically Integrated Temperature Sensor Based on p-GaN/...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Qingxin Liu Kailin Ren Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

A monolithically integrated temperature sensor circuit based on a p-GaN/AlGaN/GaN heterojunction is proposed. The sensor comprises two parts: the first part is a temperature-sensitive voltage source formed by a two-dimensional electron gas (2DEG) resistor and a schottky barrier diode (SBD) in series, and the second part is a resistor-transistor logic (RTL) inverter formed by a 2DEG resistor and a p-GaN high electron mobility transistor (HEMT) in series. The output voltage of the temperature-sensitive voltage source is connected to the gate of the p-GaN HEMT in the second part, providing the gate voltage. According to data obtained from TCAD simulation results, the output voltage of the temperature-sensitive voltage source exhibits positive temperature dependence. The output voltage of the RTL inverter exhibits a negative temperature dependence. When the temperature sensor is properly biased, the voltage division between the SBD and the 2DEG resistor in the temperature-sensitive voltage source reallocates as the temperature rises, causing the gate voltage of the connected RTL inverter to increase. This increasement enhances the temperature-induced variation in the RTL inverter's output voltage, increasing the sensitivity of the temperature sensing circuit from 4 mV/K with a fixed gate voltage to 14 mV/K. This simulation demonstrates a compact monolithic integration sensor for monitoring the on-chip temperature of GaN power integrated circuits for protection and control.

关键词： Temperature sensors Resistors Temperature dependence Sensitivity HEMTs Logic gates Thermal management Inverters system-on-chip MODFETs

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A Method of Constructing and Automatically Labeling Radio Frequency Signal Training Dataset for UAV

A Method of Constructing and Automatically Labeling Radio Fr...

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International Conference on Acoustics, Speech, and Signal Processing (ICASSP)

作者： Chao Liu Ruipeng Ma Zheng Si Mingmin Chi School of Computer Science Shanghai Key Laboratory of Data Science Fudan University Zhengzhou Zhongke Institute of Integrated Circuit and System Application School of Cyber Science and Engineering Zhengzhou University Henan Institute of Advanced Technology Zhengzhou University

The problem of signal detection and classification of multiple UAVs can be solved using object detection techniques in computer vision. However, this requires collecting and labeling a large amount of reliable raw data. Since the UAV signal dataset cannot be directly applied to object detection, we propose a method using time-frequency domain filtering and automatic labeling to construct a large-scale time-frequency spectrogram dataset. Experimental results show that the average recognition accuracies of image transmission signals and remote control signals under interference conditions are 97% and 82%, respectively, while the average errors of signal parameters are 0.93% and 5.57%.

关键词： Training Time-frequency analysis Object detection Manuals Labeling Reliability Speech processing

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A Low Delay AES Round Transform Architecture Using Constant Matrix Multiplications Merging Technologies 17

A Low Delay AES Round Transform Architecture Using Constant ...

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17th IEEE Conference on Industrial Electronics and applications, ICIEA 2022

作者： Zheng, Xinxing Zhang, Xiaoqiang Yang, Fan Xu, Mingyu Yan, Han Wuhu Institute of Technology College of Information Engineering Wuhu China Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment Ministry of Education Wuhu China Engineering Research Center of Vehicle-Mounted Display Integration System Wuhu China Anhui Polytechnic University College of Electrical Engineering Wuhu China

ISBN: (纸本)9781665409841

This paper presents a low delay architecture design method for the hardware implementation of the advanced Encryption Standard (AES) algorithm. The proposed architecture is designed by using constant matrix multiplications (CMM) merging technologies. To reduce the area cost in hardware implementations, S-box/InvS-box is usually implemented with composite field arithmetic (CFA) technologies. In this paper, CMM in CFA-based S-box/InvS-box are further merged with constant coefficient multiplications in MixColumns/ InvMixColumns, which can also be expressed as CMM forms. By the merging, the delay of the hardware implementation of encryption round transform is reduced at the cost of slight area cost increasing, and both delay and area cost are reduced in hardware implementations of decryption round transform. Hardware complexities analysis indicates that our designs have less delay compared with previous works. © 2022 IEEE.

关键词： Cryptography

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Spectrum-dependent photonic synapses based on 2D imine polymers for power-efficient neuromorphic computing

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InfoMat 2021年第8期3卷 904-916页

作者： Junyao Zhang Qianqian Shi Ruizhi Wang Xuan Zhang Li Li Jianhua Zhang Li Tian Lize Xiong Jia Huang Interdisciplinary Materials Research Center School of Materials Science and EngineeringShanghai Institute of Intelligent Science and TechnologyTongji UniversityShanghaiPeople's Republic of China Translational Research Institute of Brain and Brain-Like Intelligence Shanghai Fourth People's Hospital Affiliated to Tongji UniversityShanghaiPeople's Republic of China Key Laboratory of Advanced Display and System Application Ministry of EducationShanghai UniversityShanghaiPeople's Republic of China

2D polymers(2DPs)have attracted increasing interests in sensors,catalysis,and gas storage ***,2DPs with unique band structure and tunable photophysical properties also have immense potential for application in photonic neuromorphic ***,photonic synaptic transistors based on 2DPs as the light-tunable charge-trapping medium are developed for the first *** resulted organic transistors can successfully emulate common synaptic functions,including excitatory postsynaptic current,pair-pulse facilitation,the transition of short-term memory to long-term memory,and dynamic *** from the high photosensitivity of the 2DP,the devices can be operated under a low operating voltage of0.1 V,and achieve an ultralow energy consumption of~0.29 pJ per *** addition,the heterostructure formed between the 2DP and organic semiconductor enables spectrum-dependent synaptic responses,which facilitates the simulation of visual learning and memory processes in distinct emotional *** underlying mechanism of spectrum-dependent synaptic-like behaviors is systematically validated with in situ atomic force microscopy based electrical *** spectrum-enabled tunability of synaptic behaviors further promotes the realization of optical logic functions and associative *** work inspires the new application of 2DPs in photonic synapses for future neuromorphic computing.

关键词： 2D polymers neuromorphic computing photonic synapses synaptic functions

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Synthesis and application of a novel 9,9-diethyl-1,2-diaryl-1,9-dihydrofluoreno[2,3-d]imidazole for blue organic light emitting diode

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Chinese Chemical Letters 2020年第1期31卷 64-66页

作者： Xueying Wang Zhangcheng Liao Tianqi Wang Haixia Lin Zixing Wang Yongmei Cui Department of Chemistry College of Sciences.Shanghai UniversityShanghai 200444China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072China

Two novel 2-(4-(9,9-disubstitued-9 H-fluoren-2-yl)phenyl)-9,9-diethyl-l-phenyl-1,9-dihydrofluoreno-[2,3-d]imidazole derivatives 2 a and 2 b were synthesized and *** photophysical and electrochemical properties,thermal stability property,and electroluminescence(EL)performance of 2 b were *** fabricated device based on 2 b doping into 4,4’-N,N’-dicarbazole-biphenyl(5%)as an emitter present a maximum brightness of 1272 cd/m^2 at 4 V with the CIE coordinate of(0.1590,0.0465).

关键词： Fluorene Imidazole Photoluminescence Electroluminescence

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Double Hilbert transform based nonlinear harmonics correction for fringe projection profilometry

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Optik 2025年 327卷

作者： Wang, Beibei sun, Huanghe Huang, Chaoguang Huang, Wenbin Wang, Haijian Li, Wenjie Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guilin541004 China Engineering Research Center of Digital Imaging and Display Ministry of Education Soochow University Suzhou215006 China Guilin Kenvin Peter Technology Co. Ltd. Guilin541001 China

Fringe projection profilometry (FPP) has the advantages of large field of view, high precision and resolution, and is widely used in industrial inspection, medical treatment, aerospace and other fields. The nonlinear response between the camera and the projector in the system will affect the sinusoidal intensity of the captured fringe images, produce periodic phase errors, and affect the final reconstruction accuracy. Traditional double N-step phase shift (NPS) and Hilbert transform (HT) methods only correct the fundamental harmonic part of the phase nonlinear errors, and ignore the rest of the higher harmonic. Therefore, a double HTs based nonlinear phase error correction method is proposed, taking the higher order nonlinear harmonics into account. The artificial sinusoidal fringe images without background term are constructed using the wrapped phase calculated by captured fringe images. Then the HT is performed to convert the phase error to multiplication from addition, which can realize error balance in phase calculation. After obtaining the new phase, reoperation of artificial fringe generation and HT (AHT) is carried out to effectively remove the high order harmonic part of nonlinear harmonics. In proposed method, the wrapped phase calculated by captured fringe images is directly used to generate the artificial fringe images, which does not require additional projection patterns and realize real-time correction of phase nonlinear errors with high accuracy. Furthermore, direct artificial fringe generation also can efficiently avoids the effect of background intensity to the HT. Theoretical analysis, simulation analysis and experimental verification all prove the feasibility and superiority of the proposed method. © 2025 Elsevier GmbH

关键词： Harmonic analysis

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