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Sputtered Sn-doped Ga2O3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application

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Vacuum 2024年 225卷

作者： Wang, Chen Fan, Wei-Hang Cao, Rong-Jun Fan, Hui-Chen Xu, Yi-Hong Kang, Pin-Chun Wu, Ting-Zhu Kuo, Hao-Chung Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361004 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

The characteristics of amorphous Sn-doped Ga2O3 films deposited using radio frequency magnetron sputtering at room temperature under different sputter powers have been demonstrated. A balance mechanism of energy supply and ion bombardment controlled by sputter power has been found during the deposition. The increasing growth rate as power can be due to the increased yield sputtering species indicated by an in situ optical emission spectroscopy. As the power increases to 700 W, an obvious change from discrete nanoparticles to flat-continuous film can be observed because of sufficient energy supply for oxidation reaction, which leads to the maximum ratio of lattice oxygen and Sn4+ indicating the optimal film quality and conductive property. However, a non-negligible high energy ion bombardment presented at 900 W leads to the degraded film quality. The influence of sputtering power on Sn-doped Ga2O3 solar-blind photodetectors is demonstrated. It can obtain a good performance with an ultra-low dark current density of 2.2 × 10−11 A/cm2, a substantial light-dark current ratio of 1.08 × 103 and fast rise/decay time of 1.59 s/0.54 s at 700 W. The revelation of the role of sputtering power on the properties of Sn-doped Ga2O3 films may offer an interesting direction for low-cost and high-performance solar-blind photodetectors. © 2024 Elsevier Ltd

关键词： Gallium compounds

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Remaining useful life prediction of lithium-ion battery based on real-time decomposition and tightly coupled convolutional informer

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Renewable Energy 2025年 253卷

作者： Wu, Jinxin He, Deqiang Jin, Zhenzhen Zhao, Ming Sun, Haimeng Wang, Yanbo Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology School of Mechanical Engineering Guangxi University Nanning530004 China Guangxi Liugong Machinery Co. Ltd Liuzhou545007 China State Key Laboratory of Heavy-duty and Express High-power Electic Locomotive Zhuzhou412001 China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin Universily of Electronic Technology 541004 China

Accurate remaining useful life (RUL) prediction of lithium-ion batteries (LIBs) is crucial for ensuring safety and optimizing the performance of battery-powered systems. However, existing methods often suffer from capacity regeneration and cannot effectively learn the local fluctuations and global nonlinear degradation of the LIBs' capacity. To address these challenges, a novel hybrid framework that combines real-time variational mode decomposition (RTVMD) with a tightly coupled convolutional Informer model (TCCI) is proposed. Firstly, RTVMD introduces a fully stepwise real-time decomposition sampling technique to decompose the capacity series of LIBs in real time. Then, the TCCI module integrates the CSP attention, dilated causal convolution, and passthrough mechanism in a unified architecture to capture the capacity series’ local and long-term dependencies. Finally, several comparative experiments are conducted on three LIBs degradation datasets to demonstrate the effectiveness of the proposed model. The experimental results illustrate that the maximum mean absolute percentage error (MAPE), root mean squared error (RMSE), and mean absolute error (MAE) of the proposed method are merely 0.015, 0.008, and 0.006, respectively. Compared with other methods, the prediction accuracy of the proposed method is improved by at least 20 %. Efficient prediction outcomes can offer sufficient backing for electrical equipment predictive maintenance. © 2025 Elsevier Ltd

关键词： Lithium-ion batteries

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A new pixel structure for OLEDoS micro-display

A new pixel structure for OLEDoS micro-display

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International Conference on display Technology, ICDT 2019

作者： Guo, Aiying Ran, Feng Zhang, Jianhua Microelectronic Research and Development Center Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai China

ISBN: (纸本)9781510896161

In this paper, we propose a new pixel structure for the organic Light Emitting Diode (OLED) 0.65 inch SVGA resolution micro-display with 8 bit gray level. The proposed pixel structure is composed of 4 MOSFETS and one capacitor to integrate the pixel structure in the restricted pixel area ( 9um 9um ) using 0.18um technology. The simulation result shows that the maximum error of emission current occurs at high gray level. Author keywords © 2019, John Wiley and Sons Inc. All rights reserved.

关键词： MOSFET devices

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P-13.4: Dual-Molecule Hosts for Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes with Low Efficiency Roll-Off

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SID Symposium Digest of Technical Papers 2022年第S1期53卷

作者： Rongrong Xia Ke Wang Jianfeng Guo Hengdan Wang Zhen Zhang Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 China

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Bias-Switchable Dual-Mode Organic Photodetector with High Operational Stability Using Self-Trapped Cs3Cu2I5Interfacial Layer

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Angewandte Chemie 2024年第30期136卷

作者： Zitong Zhang Junchuan Liu Lin Wang Qi Wei Mingjie Li Chunxiong Bao Qingzhen Bian Laboratory of Advanced Quantum Bio-optoelectronics (LAQB) State Key Laboratory of Fluorine & Nitrogen Chemicals Xi'an Modern Chemistry Research Institute Xi'an 710065 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 China Department of Applied Physics The Hong Kong Polytechnic University Hong Kong 999077 China National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 China

Conventional photovoltaic (PV)-photodetectors are hard to detect fainted signals, while photomultiplication (PM)-capable devices indispensable for detecting weak light and are prone to degrade under strong light illumination and large bias, and it is urgent to realize highly efficient integrated detecting system with both PM and PV operation modes. In this work, one lead-free Cs 3 Cu 2 I 5 nanocrystals with self-trapping exciton nature was introduced as interfacial layer adjacent to bulk and layer-by-layer heterojunction structure, and corresponding organic photodetectors with bias-switchable dual modes are demonstrated. The fabricated device exhibits low operating bias (0 V for PV mode and 0.8 V for PM mode), high specific detectivity (~10 13 Jones), fast response speed as low as 1.59 μs, large bandwidth over 0.2 MHz and long-term operational stability last for 4 months in ambient condition. This synergy strategy also validated in different materials and device architectures, providing a convenient and scalable production process to develop highly efficient bias-switchable multi-functional organic optoelectrical applications.

关键词： organic photodetectors photomultiplication and photovoltaic modes operational stability self-trapped lead-free perovskite nanocrystal interfacial charge transfer

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Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere

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Solar Energy Materials and Solar Cells 2023年第1期257卷

作者： Zhang, Xiao-Ying Han, Jing Wang, Yao-Tian Ruan, Yu-Jiao Wu, Wan-Yu Wuu, Dong-Sing Zuo, Juan Lai, Feng-Min Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361024 China Department of Materials Science and Engineering National United University Miaoli36063 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan School of Materials Science and Engineering Xiamen University of Technology Xiamen361024 China Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

Hafnium oxide (HfO2) thin film has received tremendous research interests as a passivation layer of crystalline silicon (c-Si) due to its thermal stability and positive fixed charges. HfO2 films were prepared both on P-type and N-type polished c-Si via a remote plasma atomic layer deposition process. Post annealing was carried out in oxygen, atmosphere (Air) and nitrogen (N2) at temperature of 500 °C. Electrical characterization was done through a regular metal-insulator-semiconductor structure and capacitance-voltage measurements. The oxide fixed charge (Qf) and density of interface traps (Dit) between HfO2 and c-Si were extracted. Qf and Dit reveal the potential of HfO2 for field effect and chemical passivation, respectively. Effective lifetime measurements by microwave photoconductivity decay in Si wafers passivated with HfO2 were applied to characterize surface recombination velocity to directly evaluate the overall passivation quality. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO2 thin films are systematically studied. The results show that N2-annealed sample possesses the highest Qf of 1.73 × 1012 cm−2 and therefore provides the best field effect passivation. Air-annealed sample has lowest Dit of 1.0 × 1012 eV−1cm−2 and therefore provides the best chemical passivation. Air-annealed sample possesses the highest effective lifetime of 290 μs at injection level of 1 × 1015 cm−3, which means that good passivation was obtained for N-type Si wafer passivated with HfO2 after annealing in Air. © 2023 Elsevier B.V.

关键词： Annealing

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Electro-optical performance of OLED with MEH-PPV fabricated by solution process 26

Electro-optical performance of OLED with MEH-PPV fabricated ...

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26th International display Workshops, IDW 2019

作者： Lee, Seok Je Yao, Fangnan Lee, Seung Il Jin, Cao Kim, Woo Young Moon, C.-B. Jhun, Chul Gyu Department of Electronic Display Engineering Hoseo University Asan31499 Korea Republic of Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai200072 China

ISBN: (纸本)9781713806301

We investigated the effects of solvents and concentration on the electro-optical performance of the organic light emitting diode (OLED) fabricated by the solution process. From the experimental results, we optimized the fabrication method of it and we figure out the underlying mechanism of carrier flow by the trap state. © 2019 ITE and SID.

关键词： Fabrication

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Synthesis and properties of novel N,C,N terdentate skeleton based on 1,3-di(pyridin-2-yl)benzene moiety-new tricks for old dogs

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Chinese Chemical Letters 2019年第11期30卷 1951-1954页

作者： Shuai Tan Xiugang Wu Yanqiong Zheng Yafei Wang a Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications Jiangsu Key Laboratory of Environmentally Friendly Polymeric MaterialsJiangsu Collaboration Innovation Center of Photovoltaic Science and EngineeringSchool of Materials Science&EngineeringChangzhou UniversityChangzhou 213164China b College of Chemistry Key Lab of Environment-Friendly Chemistry and Application of the Ministry of EducationXiangtan UniversityXiangtan 411105China c Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China

Utilization of intermolecular Friedel-Crafts and intramolecular condensation reaction,novel 1,3-di-(pyridine-2-yl)benzene(N,C,N terdentate)skeleton with electro-withdrawing group in 6'position of pyridyl and a cyclization between 6'position of pyridyl and 6 position of benzyl ring were firstly designed and *** structures of these novel N,C,N terdentate were confirmed by NMR,MS and X-ray single *** photophysical properties of these compounds were briefly explored.

关键词： 1,3-Di(pyridin-2-yl)benzene skeleton Platinum complex Synthesis Intramolecular cyclization

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Non-doped blue and red phosphorescent OLEDs based on benzothiazole as bipolar host materials

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Dyes and Pigments 2025年 242卷

作者： Yongjie Hou Siying Ye Daqing Zhang Yi Xu Wei Shi Haitao Zhou Jinhai Huang Bin Wei Zhiyun Zhang Key Laboratory for Advanced Materials and Institute of Fine Chemicals East China University of Science & Technology 130 Meilong Road Shanghai 200237 China Jiaxing Institute of Verification and Testing 66 Zhujiagang Road Jiaxing Zhejiang 314001 China Shanghai Taoe Chemical Technology Co. Ltd Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Road Shanghai 200072 China

In this work, two novel bipolar host materials consisting of electron-rich carbazole and triphenylamine units and electron-deficient benzothiazole units, namely 4-(7-(4-(benzo[d]thiazol-2-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-yl)-N,N-diphenylaniline ( TPA-BTZ ) and 2-(4-(7-(4-(9H-carbazol-9-yl)phenyl)-9,9-dimethyl-9H-fluoren-2-yl)phenyl)benzo-[d]thiazole ( Cz-BTZ ), were first designed and synthesized. By incorporating 9,9-dimethylfluorene π-bridge to increase the molecular rigidity and improve the photo-thermal stability and photo-luminescent quantum yields, all the materials exhibited excellent thermal stability with thermal decomposition temperature (5 % weight-loss temperature) of exceeding 380 °C. Red phosphorescent organic light-emitting diodes (PhOLEDs) based on these two materials were fabricated, which showed excellent performance with a very low turn-on voltage of 2.6 V. Remarkably, the device hosted by Cz-BTZ exhibited a maximal external quantum efficiencies (EQE max ) of 27.82 % and a maximal power efficiency of 36.21 lm/W. The device hosted by TPA-BTZ exhibited an EQE max of 27.72 % and a maximum luminance of 21116 cd/m 2 . Moreover, the Cz-BTZ -based OLED had a minor efficiency roll-off with the EQE remaining at 26.76 % when the luminance reached 1000 cd/m 2 . In addition, the non-doped blue OLED based on Cz-BTZ achieved an EQE max of 4.85 %. Designing bipolar phosphorescent host materials based on benzothiazole is a feasible approach for achieving highly efficient and thermally stable PhOLEDs.

关键词：

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A New Low-power Pixel Circuit for OLEDoS Microdisplay

A New Low-power Pixel Circuit for OLEDoS Microdisplay

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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)

作者： Deng Hao Guo Aiying Ran Feng Microelectronic Research & Development Center Shanghai UniversityShanghai200444China Key Laboratory of Advanced Display and System Applications Shanghai UniversityShanghai200072 China

ISBN: (数字)9780738111889

ISBN: (纸本)9781665419642

In order to solve the problem of high bandwidth data volume and low power consumption of OLEDoS microdisplay panels,this paper proposes a new type of digital low-power pixel *** driving circuit includes a plurality of pixel driving units,which can store multi-pixel bit information at one time,thereby reducing the amount of data read *** with the traditional digital pixel circuit,the proposed circuit can skip the grayscale data writing process when the picture is still or the rate of change is low,thus reducing the data flow and power consumption.

关键词： Microdisplays Organic light emitting diodes Writing MOSFET Brightness Power demand Integrated circuit modeling

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