检索结果-内蒙古大学图书馆

SSRN 2024年

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Tingzhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China School of Ocean Information Engineering Jimei University Jimei District Fujian Xiamen361021 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen361005 China Department of Photonics Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0% to 50%, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga2O3, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40%, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ~4.5×10-13 A, an excellent light switching ratio ~2.2×107, and an outstandingly high sensitivity ~34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga2O3 TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024, The Authors. All rights reserved.

关键词： Zinc oxide

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High color rendering index white LEDs fabricated using InP/ZnS green-emitting quantum dots and InP/ZnSe/ZnS red-emitting quantum dots

High color rendering index white LEDs fabricated using InP/Z...

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16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors (第十六届中国国际半导体照明论坛暨2019国际第三代半导体论坛)

作者： Doudou Zhang Yuxian Yan Fan Cao Gongli Lin Xuyong Yang Wanwan Li Luqiao Yin Jianhua Zhang School of Materials Science and Engineering Shanghai UniversityShanghai 200072China Key Laboratory Key Laboratory of Advanced Display and System Applications Shanghai UniversityMinistry of Education State Key Lab of Metal Matrix Composites School of Materials Science and EngineeringShanghai Jiao T Key Laboratory of Advanced Display and System Applications Shanghai UniversityMinistry of Education Key Laboratory of Advanced Display and System Applications Shanghai UniversityMinistry of Education

ISBN: (数字)9781728157566

ISBN: (纸本)9781728157573

Quantum dots(QDs)have the advantages of spectrally adjustable,high quantum yield and narrow half-peak width,and are the most potential light-converting materials for white light that achieve high color rendering index and high *** InGaN blue light chip currently used excites Ce-doped yttrium aluminum garnet(YAG: Ce3+)yellow phosphor,and the white light-emitting diode(WLED)realized exhibits color rendering index(CRI)<80 and an unsatisfactory color coordinate because of lack of red spectral *** order to improve the CRI of white LEDs,in this paper,we fabricated InP/ZnS green-emitting QDs and InP/ZnSe/ZnS red-emitting QDs,and excited YAG: Ce3+yellow phosphor,InP/ZnS green-emitting QDs and InP/ZnSe/ZnS red-emitting QDs with blue chip,made WLED(Ⅰ),and compared with WLED(Ⅱ)generated by using blue LED chip to excite YAG: Ce3+yellow *** result shows that the WLED(Ⅰ)achieves a CRI of 90.3 at a driving current of 5 *** Commission International de L'Eclairage(CIE)chromaticity coordinates are(0.3393,0.3342),and the correlated color temperature(CCT)is 5186K,which is high quality white light close to sunlight.

关键词： Light emitting diodes II-VI semiconductor materials Zinc compounds Phosphors Color Indium phosphide III-V semiconductor materials

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Influence of thermal annealing-induced molecular aggregation on film properties and photovoltaic performance of bulk heterojunction solar cells based on a squaraine dye

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Frontiers of Materials Science 2018年第2期12卷 139-146页

作者： Pengpeng ZHANG Zhitian LING Guo CHEN Bin WEI School of Materials Science and Engineering Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai 200072 China

Squaraine （SQ） dyes have been considered as efficient photoactive materials for organic solar cells. In this work, we purposely controlled the molecular aggregation of an SQ dye, 2,4-bis[4-（N,N-dibutylamino）-2-dihydroxyphenyl] SQ （DBSQ- （OH）2） in the DBSQ（OH）2：[6,6]-phenyl-Cel-butyric acid methyl ester （PCBM） blend film by using the thermal annealing method, to study the influence of the molecular aggregation on film properties as well as the photovoltaic performance of DBSQ（OH）2：PCBM-based bulk heterojunction （BHJ） solar cells. Our results demonstrate that thermal annealing may change the aggregation behavior of DBSQ（OH）2 in the DBSQ（OH）2：PCBM film, and thus significantly influence the surface morphology, optical and electrical properties of the blend film, as well as the photovoltaic performance of DBSQ（OH）2：PCBM BHJ cells.

关键词： organic solar cells squaraine dye molecular aggregation film properties power conversion efficiency

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The design of AGV's dynamic wireless power transmission power supply based on Adaptive Weight Value Multi-objective Genetic Algorithm 3

The design of AGV's dynamic wireless power transmission powe...

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3rd International Conference on Traffic Engineering and Transportation system, ICTETS 2019

作者： Ning, Pingfan Li, Tiantong Niu, Pingjuan Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology School of Electrical Engineering and Automation Tianjin Polytechnic University Tianjin300387 China Engineering Research Center of High Power Solid State Lighting Application System Ministry of Education Tianjin300387 China

AGV is the application of modern factory intelligence and automation. With the development of wireless power transmission (WPT), its transmission efficiency and stability are getting higher and higher. However, from static charging to dynamic power supply, the cost of technology implementation has increased significantly. This paper proposed a method to supply power to logistics AGV by intermittent segment, established the binary coverage model according to the power coverage distance, and designed an Adaptive Weight Value Multi-objective Genetic Algorithm (AWVMOGA) for this model to Optimizing the path design of sectional power supply. The influence of three weight value adaptive methods on the optimization results is analyzed, the effectiveness of the proposed method is analyzed and verified through case simulation. © Published under licence by IOP Publishing Ltd.

关键词： Genetic algorithms

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Plasma-state metasurfaces for ultra-intensive field manipulation

arXiv

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arXiv 2025年

作者： Chen, Zi-Yu Xu, Hao Jia, Jiao Chen, Yanjie Chen, Siyu Zhang, Yan Wei, Mingxuan Ma, Minghao Li, Runze Yang, Fan Li, Mo Lu, Guangwei Zhou, Weijun Mou, Hanmi Zhang, Zhuofan Yang, Zhida Gao, Jian Liu, Feng Li, Boyuan Chen, Min Chen, Liming Wang, Yongtian Huang, Lingling Yan, Wenchao Zhang, Shuang Zhang, Jie Key Laboratory of High Energy Density Physics and Technology College of Physics Sichuan University Chengdu610064 China Key Laboratory of Laser Plasma School of Physics and Astronomy Shanghai Jiao Tong University Shanghai200240 China IFSA Collaborative Innovation Center Shanghai Jiao Tong University Shanghai200240 China Beijing Engineering Research Center of Mixed Reality and Advanced Display Key Laboratory of Photoelectronic Imaging Technology System of Ministry of Education of China School of Optics and Photonics Beijing Institute of Technology Beijing100081 China New Cornerstone Science Laboratory Department of Physics University of Hong Kong Hong Kong HKU-SIRI Shenzhen518000 China Institute of Physics Chinese Academy of Sciences Beijing100190 China

High-power lasers offer ultrahigh intensities for plasma interactions, but they lack advanced techniques to control the properties of the fields, because no optical elements could withstand their high intensities. The vibrant field of metasurfaces has transformed modern optics by enabling unprecedented control over light at subwavelength through deliberate design. However, metasurfaces have traditionally been limited to solid-state materials and low light intensities. Extending the sophisticated capabilities of metasurfaces from solids into the plasma realm would open new horizons for high-field science. Here, we experimentally demonstrate plasma-state metasurfaces (PSMs) through the photonic spin Hall effect and stable-propagating vortex beam generation irradiated by intense light. Time-resolved pump-probe measurements reveal that the functionality of PSMs can persist for several picoseconds, making them suitable for controlling ultra-intense femtosecond lasers, even in state-of-the-art multi-petawatt systems. Harnessing the powerful toolkit of metasurfaces, this approach holds the promise to revolutionize our ability to manipulate the amplitude, phase, polarization, and wavefront of high-power lasers during their pulse duration. It also opens new possibilities for innovative applications in laser-plasma interactions such as compact particle acceleration and novel radiation sources. Copyright © 2025, The Authors. All rights reserved.

关键词： Beam plasma interactions

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P-13.3: Efficient Blue and Color Tunable White OLED Based on Platinum Complex

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SID Symposium Digest of Technical Papers 2021年第S1期52卷

作者： Jianfeng Guo Zhangcheng Liao Rongrong Xia Hong Lin Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 P. R. China

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P-13.7: Azaspirobifluorene Derivatives Enhanced Efficiency and Lifetime of Blue Phosphorescent OLEDs

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SID Symposium Digest of Technical Papers 2021年第S1期52卷

作者： Rongrong Xia Dehai Dou Zhangcheng Liao Jianfeng Guo Peng Wu Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 P. R. China

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Recent Widespread Deceleration of Global Surface Urban Heat Islands Unveiled by Satellites

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Geophysical Research Letters 2025年第12期52卷

作者： Wenfeng Zhan Long Li T. C. Chakraborty Leiqiu Hu Dazhong Wang Weilin Liao Shasha Wang Huilin Du Fan Huang Chunli Wang Zihan Liu Manchun Li Jiangsu Provincial Key Laboratory for Advanced Remote Sensing and Geographic Information Technology International Institute for Earth System Science Nanjing University Nanjing China Jiangsu Center for Collaborative Innovation in Geographical Information Resource Development and Application Nanjing China Frontiers Science Center for Critical Earth Material Cycling Nanjing University Nanjing China Pacific Northwest National Laboratory Richland WA USA Department of Atmospheric Science University of Alabama in Huntsville Huntsville AL USA Guangdong Key Laboratory for Urbanization and Geo-Simulation School of Geography and Planning Sun Yat-sen University Guangzhou China School of Geography and Ocean Science Nanjing University Nanjing China

Tracking the temporal dynamics of urban heat island (UHI) is critical for urban heat adaptation and mitigation strategies. However, whether UHI trends have shifted recently and their underlying drivers remain unknown. Here we investigate the variabilities in surface UHI trends and their associated determinants in 2,104 cities worldwide from 2000 to 2022. Our findings reveal that approximately half of the world's cities have experienced notable shifts in surface UHI trends, predominantly characterized by UHI deceleration. These shifts can be primarily attributed to alterations in vegetation trends during the day and to modifications in surface albedo and local warming trends at night. Our study challenges the conventional linear models commonly employed to estimate surface UHI trends, suggesting potential biases in such estimates. Our findings underscore the need for nuanced policies to curtail UHI growth by considering changes in urban underlying surfaces and background climate, particularly from a nonlinear perspective. Satellite records reveal that almost half of the world's cities experienced changes in urban heat island (UHI) trends, mainly slowdowns The UHI deceleration occurs at a more rapid speed in larger cities and old urban area as compared to smaller cities and newly urbanized area The changes in UHI trends are intricately regulated by nonlinear changes in urbanization processes and background climate changes Cities worldwide have witnessed a pervasive upward trend in surface urban heat island (UHI). However, it remains unclear whether this trend has changed. Here we reveal approximately half of the world's cities experiencing significant shifts in surface UHI trends, primarily characterized by deceleration. These shifts are mainly regulated by local changes in vegetation, albedo and air temperature. Our research underscores the limited understanding of temporal dynamics of surface UHI, offering the first indication of global prevalence of nonlinear trend

关键词： urban heat island land surface temperature interannual variation urban heat mitigation urban renewal

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Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio

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Materials Today Chemistry 2024年 38卷

作者： Fan, Hui-Chen Wang, Chen Xu, Yi-Hong Fan, Teng-Min Huang, Pao-Hsun Ruan, Yu-Jiao Wu, Ting-Zhu Kuo, Hao-Chung Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen 361024 China School of Ocean Information Engineering Jimei University Jimei District Xiamen 361021 Fujian China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen 361024 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen 361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou 54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua 51591 Taiwan

In this study, plasma enhanced atomic layer deposition was used to prepare ZnGaO thin films with different ZnO cycle ratios from 0 % to 50 %, which were employed to fabricate the MSM-type and TFT-type solar-blind photodetector. The properties of the films and the performance of the solar blind photodetector are greatly affected by the ZnO cycle ratio. Appropriate Zn doping content decreases the ratio of oxygen vacancies and Zn interstitials in Ga₂O₃, while excessive Zn doping degrades the quality of the film. Compared to MSM-type photodetector, an obviously improved performance of ZnGaO TFT-type photodetector has been observed due to its self-amplified photocurrent and the reduced dark current controlled by gate voltage. At a ZnO cycle ratio of 40 %, a superior performance of TFT-type solar-blind photodetector with an ultra-low dark current ∼4.5 × 10⁻¹³ A, an excellent light switching ratio ∼2.2 × 10⁷, and an outstandingly high sensitivity ∼34.31 A/W has been obtained. These results demonstrate that the incorporation of Zn dopants can effectively modulate the performance of Ga₂O₃ TFT-type photodetector providing a great perspective for cost-effective and high-performance solar-blind PDs. © 2024 Elsevier Ltd

关键词： High performance Plasma enhanced atomic layer deposition TFT-Type solar-blind photodetector ZnGaO film ZnO cycle ratio

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Self-Assembled Copper Nanoclusters-Based White Light Emitting Diodes With High Performance

Self-Assembled Copper Nanoclusters-Based White Light Emittin...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Yameng Hu Jianhua Zhang Liang Wang Weitao Li Doudou Zhang Luqiao Yin Key Laboratory of Advanced Display and System Applications Shanghai University Shanghai China Institute of Nanochemistry and Nanobiology Shanghai University Shanghai China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

Metal nanoclusters, composed of a few to a hundred atoms, whose size is close to the Fermi wavelength of electrons, have become a new type of phosphor materials due to their unique electronic structure and excellent performance. And metal nanoclusters have been applied in various applications, such as bioimaging, chemical biosensing, optoelectronic devices, etc. At present, researchers have synthesized and studied gold nanoclusters and silver nanoclusters, but Au and Ag nanoclusters have one drawback: expensive. At the same time, copper nanoclusters have attracted people's attention because of their non-toxicity, large Stokes shift and economy. In this paper, we fabricated 1-dodecanethiol (DT)-capped self-assembled copper nanoclusters in colloidal solution with yellow light emission and characterized the prepared self-assembled copper nanoclusters by UV-visible spectra, TEM and PL characterization methods. Self-assembled copper nanoclusters were used as color conversion layers for the manufacture of white light-emitting diodes. The prepared white LED has good color properties, the color rendering index was 79.3, the CIE color coordinates located at (0.3213,0.3255) and the color temperature was 6067K. This indicates that copper nanoclusters show potential for applications in white lighting emitting diodes as a new type of low-cost and superior photoluminescent material candidates.

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