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Efficiency enhancement in DIBSQ：PC71BM organic photovoltaic cells by using Liq-doped Bphen as a cathode buffer layer

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Frontiers of Materials Science 2017年第3期11卷 233-240页

作者： Guo CHEN Changfeng SI Pengpeng ZHANG Kunping GUO Saihu PAN Wenqing ZHU Bin WEI Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai 200072 China

We have improved the photovoltaic performance of 2,4-bis[4-（N,N- diisobutylamino）-2,6-dihydroxyphenyl] squaraine：[6,6]-phenyl C71-butyric acid methyl ester （DIBSQ：PC71BM） organic photovoltaic （OPV） cells via incorporating Liq-doped Bphen （Bphen-Liq） as a cathode buffer layer （CBL）. Based on the Bphen-Liq CBL, a DIBSQ：PC71BM OPV cell possessed an optimal power conversion efficiency of 4.90%, which was 13% and 60% higher than those of the devices with neat Bphen as CBL and without CBL, respectively. The enhancement of the device performance could be attributed to the enhanced electron mobility and improved electrode/active layer contact and thus the improved photocurrent extraction by incorporating the Bphen-Liq CBL. Light-intensity dependent device performance analysis indicates that the incorporating of the Bphen-Liq CBL can remarkably improve the charge transport of the DIBSQ：PC71BM OPV cell and thus decrease the recombination losses of the device, resulting in enhanced device performance. Our finding indicates that the doped Bphen-Liq CBL has great potential for high-performance solution-processed small-molecule OPVs.

关键词： organic photovoltaic cells squaraine cathode buffer layer power conversion efficiency solution-process

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Electrical degradation behavior in metal oxide thin film transistor under negative bias-illumination stress

Electrical degradation behavior in metal oxide thin film tra...

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International Conference on Optical Communications and Networks (ICOCN)

作者： Youhang Zhou Jun Li Yaohua Yang Qi chen Jianhua Zhang Zhilin Zhang School of Material Science and Engineering Shanghai University Jiading Shanghai People’s Republic of China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai People’s Republic of China

The electrical degradation behavior in metal oxide thin film transistor (TFT) under negative bias-illumination stress (NBIS) is one of the biggest obstacles for its applications in flat panel display. In order to solve this issue, Sr and N are doped in In 2 O 3 thin film and significantly improve the NBIS stability of In 2 O 3 TFT. In addition, the doping of N can also reduce the degradation in electrical performance caused by Sr doping. The XPS of SrInON thin film is tested to prove the reduction of the oxygen vacancy.

关键词： Thin film transistors Doping Thermal stability Stress Lighting Degradation Stability analysis

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Correction: Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes

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Journal of Materials Chemistry C 2020年第45期8卷 16241-16241页

作者： Piaoyang Shen Xiaomin Li Fan Cao Xingwei Ding Xuyong Yang Key Laboratory of Advanced Display and System Applications of Education of Ministry Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China

Correction for ‘Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes’ by Piaoyang Shen et al., J. Mater. Chem. C, 2018, 6, 9642–9648, DOI: 10.1039/C8TC03155J.

Correction for ‘Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes’ by Piaoyang Shen et al., J. Mater. Chem. C, 2018, 6, 9642–9648, DOI: 10.1039/C8TC03155J.

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Method to Prevent Thin Film Cracking of Thin Film Encapsulation in Flexible AMOLED

Method to Prevent Thin Film Cracking of Thin Film Encapsulat...

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International Conference on Electronic Packaging Technology

作者： Wei Ao Xiaogang Xin Xiangchao Liu Yinghui Zhu Feng Gao Chunhong Li Jianhua Zhang Chaochi Peng Yan Wang Kunshan Govisionox Optoelectronics Co. LTD Kunshan China Key Laboratory of Advanced Display and System Application Shanghai University Shanghai China

PECVD hydrogenated silicon oxynitride (SiON) thin film, due to its excellent chemical and physical properties, is widely used in flexible encapsulation as an protective layer. However, SiON thin film cracking severely restricted the performance of the thin film encapsulation, and cannot be effectively tackled by flexible electronics industry. So improving the quality of the SiON thin film and preventing thin film cracking is crucial to flexible electronics industry. In this paper, effects of RF power, pressure, process gas on stress property in SiON thin film were studied in detail by stress meter. Therefore, increasing RF power, pressure and decreasing H_2 flow can prevent SiON thin film cracking.

关键词： PECVD SiON Thin Film Stress

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Fine-Tuning Crystal Structures of Lead Bromide Perovskite Nanocrystals through Trace Cadmium(II) Doping for Efficient Color-Saturated Green LEDs

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Angewandte Chemie 2024年第26期136卷

作者： Dr. Jianfeng Zhang Dr. Junhui Wang Dr. Lei Cai Dr. Sheng Wang Prof. Kaifeng Wu Prof. Baoquan Sun Prof. Weitao Zheng Dr. Stephen V. Kershaw Prof. Guohua Jia Prof. Xiaoyu Zhang Prof. Andrey L. Rogach Prof. Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 P. R. China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 611731 P. R. China State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 Liaoning P. R. China University of Chinese Academy of Sciences Beijing 100049 P. R. China Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou 215123 P. R. China Key Laboratory of Automobile Materials Ministry of Education College of Materials Science and Engineering Jilin University Changchun 130012 P. R. China Department of Materials Science and Engineering Centre for Functional Photonics (CFP) City University of Hong Kong Hong Kong SAR 999077 P. R. China School of Molecular and Life Science Curtin University Bentley WA 6102 Australia

Decreasing perovskite nanocrystal size increases radiative recombination due to the quantum confinement effect, but also increases the Auger recombination rate which leads to carrier imbalance in the emitting layers of electroluminescent devices. Here, we overcome this trade-off by increasing the exciton effective mass without affecting the size, which is realized through the trace Cd 2+ doping of formamidinium lead bromide perovskite nanocrystals. We observe an ~2.7 times increase in the exciton binding energy benefiting from a slight distortion of the [BX 6 ] 4− octahedra caused by doping in the case of that the Auger recombination rate is almost unchanged. As a result, bright color-saturated green emitting perovskite nanocrystals with a photoluminescence quantum yield of 96 % are obtained. Cd 2+ doping also shifts up the energy levels of the nanocrystals, relative to the Fermi level so that heavily n -doped emitters convert into only slightly n -doped ones; this boosts the charge injection efficiency of the corresponding light-emitting diodes. The light-emitting devices based on those nanocrystals reached a high external quantum efficiency of 29.4 % corresponding to a current efficiency of 123 cd A −1 , and showed dramatically improved device lifetime, with a narrow bandwidth of 22 nm and Commission Internationale de I'Eclairage coordinates of (0.20, 0.76) for color-saturated green emission for the electroluminescence peak centered at 534 nm, thus being fully compliant with the latest standard for wide color gamut displays.

关键词： perovskite nanocrystals light-emitting diode exciton binding energy auger recombination cadmium (II) doping

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Band Structure Engineering of Black Phosphorus/Graphene/MoS2 van der Waals Heterojunctions for Photovoltaic and Optoelectronic Device application

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Journal of Physics: Conference Series 2021年第2期1865卷

作者： Wenhuan Zhu Lingwei Kong Wei Long Xianglei Shi Dayong Zhou Lijie Sun Lihua Zhou Guiting Yang Xiaodong Liu Hai Liu Maolin Bo Xiaoqiang Hou Department of Micro/Nano Electronics School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai China State Grid Nanchong Power Supply Company Nanchong China State Key Laboratory of Space Power-Sources Technology Shanghai China Shanghai Institute of Space Power-Sources Shanghai China Guizhou Space Appliance Co. Ltd. Guizhou China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing Yangtze Normal University Chongqing China

In this paper, we study the band structure engineering of black phosphorus/graphene/MoS2 (BP/graphene/MoS2) van der Waals heterojunctions based on ab initio simulations. The density of state and charge density of BP/MoS2, bilayer-BP/MoS2, bilayer-BP/graphene/MoS2 and graphene/bilayer-BP/MoS2 heterojunctions are also investigated. It is found that the bandgaps of these four heterojunctions are smaller than the case of single layer BP or MoS2. When graphene is inserted into or stacked upon BP and MoS2 layers, the heterojunction can obtain a minimum bandgap and a higher density of state distribution. In the differential charge density diagram, electrons over the carbon, sulfur and phosphorus atoms are lost from those corresponding parts. These investigations based on the band structure engineering of 2D van der Waals heterojunctions can provide an effective guidance to manufacture the future nanoscale high performance photovoltaic and optoelectronic devices.

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The Effect of Glass Frit Paste Levelling Property on Encapsulation

The Effect of Glass Frit Paste Levelling Property on Encapsu...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Rui Tian Luqiao Yin Yi Li Jianhua Zhang Yibin Wang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China

Laser-assisted glass frit bonding encapsulation (hereafter referred to as Laser bonding) is proposed for encapsulating air sensitive device that need a hermetic package with long-term stability. Laser bonding technology is a typical local non-contact heating technology, which allows temperature-sensitive devices to be used inside cell. With the excellent barrier performance, glass frit play an important role in encapsulation. Many factors such as the particles size, paste viscosity during process and unfairness of the surface morphology caused in screen printing process can cause the formation of defects in glass frit, weakening the barrier properties for blocking moisture and oxygen. We found that high saddle height difference comes out due to improper viscosity and improper printing process. In order to further verify the reliability of the glass laser encapsulation in the temperature output mode, the water vapor transmission rate (WVTR) of the encapsulated structure was tested using the active metal calcium electrical test method. Finally, we found that the lower saddle height difference is contributes to the smooth surface appearance. Furthermore the lower saddle height difference conducts to lower WVTR.

关键词： Glass Printing Calcium Bonding Encapsulation Surface morphology Surface treatment

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Synthesis of ZnO nanorods based on electrospinning technology

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Journal of Physics: Conference Series 2020年第3期1549卷

作者： Xiuzhen Lu Yongqian Sun Ziwei Jiang Maomao Zhang Yang Lin SMIT Center School of Mechatronic Engineering and Automation Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

A new method for fabrication of ZnO nanorods was reported. ZnO nanorods were synthesized by electrospinning technology and heat treatment with polyvinyl alcohol (PVA) and Zinc acetate as precursor. After heat treatment of ZnO electrospun nanofibers, ZnO nanorods were obtained. Morphology of ZnO nanorods was characterized by Scanning electron microscopy (SEM). Various morphologies, such as sphere, flower and plane composed of ZnO nanorods were observed. Transmission electron microscopy (TEM) images demonstrated ZnO nanorods are a single crystalline structure with a diameter of 100-180 nm. The hexagonal wurtzite structure of ZnO nanorods was determined by X-ray diffraction (XRD) pattern and Raman spectra.

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Correction: Transport mechanisms in a puckered graphene-on-lattice

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Nanoscale 2019年第14期11卷 7003页

作者： T Xu A Díaz Álvarez W Wei D Eschimese C Brillard S Eliet O Lancry E Galopin F Vaurette M Berthe D Desremes B Wei J Xu J F Lampin E Pallecchi H Happy D Vignaud B Grandidier Key Laboratory of Advanced Display and System Application Shanghai University 149 Yanchang Road Shanghai 200072 People's Republic of China.

Correction for 'Transport mechanisms in a puckered graphene-on-lattice' by T. Xu et al., Nanoscale, 2018, 10, 7519-7525.

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Real-time imaging of accelerated solid-liquid-gas reactions with nanobubbles

Research Square

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Research Square 2020年

作者： Wang, Wen Xu, Tao Chen, Jige Shangguan, Junyi Dong, Hui Ma, Huishu Zhang, Qiubo Bai, Tingting Guo, Zhirui Fang, Haiping Zheng, Haimei Sun, Litao SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of Education Collaborative Innovation Center for Micro/Nano Fabrication Device and System Southeast University Nanjing210096 China Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Shanghai Synchrotron Radiation Facility Zhangjiang Laboratory Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai201204 China Department of Physics East China University of Science and Technology Shanghai200237 China Department of Materials Science and Engineering University of California BerkeleyCA94720 United States Shanghai Institute of Applied Physics Chinese Academy of Sciences Shanghai201800 China Key Laboratory of Welding Robot and Application Technology of Hunan Province Engineering Research Center of Complex Tracks Processing Technology Equipment of Ministry of Education Xiangtan University Xiangtan411105 China The Second Affiliated Hospital Key Laboratory for Aging & Disease Nanjing Medical University Nanjing210011 China

Solid-liquid-gas reactions are ubiquitous. An understanding of how gases influence the reactions at the nanoscale is significant for achieving the enhanced triple-phase reactions. Here, we report a real-time observation of the accelerated etching of gold nanorods with oxygen nanobubbles in aqueous hydrobromic acid using liquid cell transmission electron microscopy (TEM). Our observation reveals that when an oxygen nanobubble is close to a nanorod below the critical distance (~1nm), the local etching rate is significantly enhanced with over an order of magnitude faster. Molecular dynamics simulations results show that the strong attractive van der Waals interaction between the gold nanorod and oxygen molecules facilitates the transport of oxygen through the thin liquid layer to the gold surface and thus plays a crucial role in increasing the etching rate. This result sheds light on the rational design of solid-liquid-gas reactions for enhanced activities. © 2020, CC BY.

关键词： Molecular dynamics

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