High-efficiency and low-voltage organic light-emitting device (OLED) with a composite hole transport layer (c-HTL) of m-MTDATA doped into NPB was demonstrated. With Alq3 as the emitting and electron transport layer, t...
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High-efficiency and low-voltage organic light-emitting device (OLED) with a composite hole transport layer (c-HTL) of m-MTDATA doped into NPB was demonstrated. With Alq3 as the emitting and electron transport layer, the maximum luminous efficiency of OLED using c-HTL reached 5.3 cd/A which was much higher than that (3.4 cd/A) of the device with NPB as HTL. The c-HTL can improve the device efficiency by a factor of ~1.5, which is because the dopant of m-MTDATA (5 wt%) reduced the hole mobility of c-HTL and thereby promoted carrier balance. Moreover, with the incorporation of MoOx between ITO and c-HTL, the driving voltage of the device was reduced by ~1 V as a result of the reduced hole-injection barrier while the luminous efficiency was negligibly affected (5.1 cd/A). The low voltage contributed to the improved power efficiency of 4.6 lm/W (enhanced by ~30% compared with the device without MoOx layer), which was even higher in Alq3-based OLED.
With the continual increase in cooling demand for microprocessors, the microelectronics industry has been increasingly focused on the development of thermal solutions. Thermal Interface Material (TIM) plays a key role...
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With the continual increase in cooling demand for microprocessors, the microelectronics industry has been increasingly focused on the development of thermal solutions. Thermal Interface Material (TIM) plays a key role in reducing the thermal resistance of packaging and the thermal resistance between the electronic device and the external cooling components. Nano-TIM, a new type of thermal interface material, was developed to improve the heat dissipation of electronic devices. This paper describes work undertaken to research the reliability of Nano-TIM. Pull tests were used to investigate the shear strength of samples with Nano-TIM of different thicknesses coalesced between two PCBs with Sn coating made under different pressure. Scanning Electron Microscopy (SEM) analysis techniques were used to determine the morphology of the shear fracture section after pull tests and observe the structure of the cross section of Nano-TIM coalesced between two PCBs with Sn coating.
In recent years, organic light-emitting diodes (OLEDs) for the application of flat panel displays (FPDs) have been attracting many researchers. Blue OLEDs are the potential light source to make full color FPDs by colo...
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Salient object segmentation is an important technique for many content based applications. This paper presents an unsupervised salient object segmentation method under the graph cut optimization framework. First, we e...
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This paper presents the ASIC design and implementation of digital baseband system for UHF RFID reader based on EPC Global C1G2/ISO 18000-6c protocol. The digital baseband system consists of two parts: transmitter and ...
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ISBN:
(纸本)9781424467372
This paper presents the ASIC design and implementation of digital baseband system for UHF RFID reader based on EPC Global C1G2/ISO 18000-6c protocol. The digital baseband system consists of two parts: transmitter and receiver, which inculing encoding module, decoding module, channel filers, CRC chenk module, control module and a SPI module. It is described in verilog HDL in RTL level, with Design Complier for synthesizing, PT for static timing analyzing and Astro for physical design. The die is fabricated using IBM 130nm 8-layer-metal RF cmos process successfully, which size is 3 mm × 3mm, the power consumption is around 6.7mW. It can be applied in the research of single-chip UHF RFID reader.
This paper presents a 2.4GHz fully integrated power amplifier based on 0.18μm SiGe BiCMOS technology for wireless local area network applications [1]. The power amplifier shows a 1 dB compression output power of 22.1...
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ISBN:
(纸本)9781424467372
This paper presents a 2.4GHz fully integrated power amplifier based on 0.18μm SiGe BiCMOS technology for wireless local area network applications [1]. The power amplifier shows a 1 dB compression output power of 22.19dBm at an input power of 0.135dBm. A temperature-insensitive bias circuit is used in this PA design to improve the amplifier linearity. The total fabricated die size is about 1.5mm×1.2mm. The designed PA based on SiGe BiCMOS technology demonstrates a competitive linearity performance compared with GaAs, when considering the factors of cost and process complexity.
Current multi-view video coding (MVC) reference model in joint video team (JVT) does not provide efficient rate control schemes. This paper presents a rate control algorithm for MVC by improving the quadratic rate...
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Current multi-view video coding (MVC) reference model in joint video team (JVT) does not provide efficient rate control schemes. This paper presents a rate control algorithm for MVC by improving the quadratic rate-distortion (R-D) model. We reasonably allocate bit-rate among views based on the correlation analysisl The proposed algorithm consists of three levels to control the rate bits more accurately, of which the frame layer allocates bits according to the frame complexity and the temporal activity. Extensive experiments show that the proposed algorithm can control the bit rate efficiently.
This paper presents a 2.4GHz monolithic Class E power amplifier based on Grace 0.18um SiGe BiCMOS technology. It has a two-stage structure and adopts small DC feed inductors and on-chip matching networks. Without any ...
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ISBN:
(纸本)9781424467372
This paper presents a 2.4GHz monolithic Class E power amplifier based on Grace 0.18um SiGe BiCMOS technology. It has a two-stage structure and adopts small DC feed inductors and on-chip matching networks. Without any off-chip components, the power amplifier achieves maximum output power of 22.4dBm. and the PAE is 33% with 2V supply. After optimizing the component parameter, the input and output terminals are both well matched to baseband and antenna respectively. With EER or ET technology this switch-mode amplifier can realize linear amplification, resulting in impressive high efficient in future communication system.
We present an unequal decoding power allocation (UDPA) approach for minimization of the receiver power consumption subject to a given quality of service (QoS), by exploiting data partitioning and turbo decoding. W...
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We present an unequal decoding power allocation (UDPA) approach for minimization of the receiver power consumption subject to a given quality of service (QoS), by exploiting data partitioning and turbo decoding. We assign unequal decoding power of forward error correction (FEC) to data partitions with different priority by jointly considering the source coding, channel coding and receiver power consumption. The proposed scheme is applied to H.264 video over additive white Gaussion noise (AWGN) channel, and achieves excellent tradeoff between video delivery quality and power consumption, and yields significant power saving compared with the conventional equal decoding power allocation (EDPA) approach in wireless video transmission.
We have developed a new method to measure the water vapor transmission ratio (WVTR) for thin film encapsulation (TFE) of organic light emitting diodes (OLEDs). It is a nondestructive method to measure WVTR by investig...
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We have developed a new method to measure the water vapor transmission ratio (WVTR) for thin film encapsulation (TFE) of organic light emitting diodes (OLEDs). It is a nondestructive method to measure WVTR by investigating the change of photoluminescent spectra of organic material. This method can be realized easily by online test. By calibrating the evolution curve (the photoluminescent intensity versus time), we have figured out the relative water transmission which was responded by organic materials. The WVTR of TFE devices is estimated to be about 2.0×10-2gm-2day-1 in a controlled environment of 85% relative humidity (RH) at 38℃. Novel thin film encapsulation devices have also been presented.
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