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Simulation Study on Electrothermal and Mechanical Coupling of Bumps in 5×5 Micro-LED Array 20

Simulation Study on Electrothermal and Mechanical Coupling o...

20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Yang, Zhu Fu, Hao Wang, Kefeng Ji, Xiaoxiao Chen, Liang Yin, Luqiao Lu, Xiuzhen Zhang, Jianhua School of Microelectronics Shanghai University Shanghai201800 China Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai2000072 China School of Mechatronic Engineering and Automation Shanghai University Shanghai2000072 China

ISBN: (纸本)9798350385373

As a frontier research field of next-generation display technology, Micro-LED technology has the advantages of high brightness, high contrast and high energy efficiency. With the development trend of high-power, multi-array LEDs, the research on thermal stability of LEDs is gradually deepened. In order to explore the thermal stability of bumps during the working of Micro-LED, COMSOL Multiphysics simulation software and finite element method were used to analyze the electrothermal and mechanical coupling of bumps in 5×5 Micro-LED array in this paper. Flip-chip bonding was employed for interconnection of Micro-LED array and Si driver chip with the gap except Micro-LED devices between sapphire and silicon substrate filled with underfill to alleviate the stress concentration. The effects of different filling materials, applied current densities, and dimensions of In bumps (cylindrical) on thermal stress and displacement of the Micro-LED array were analyzed in detail. The results show the stress and displacement of the bumps with polyimide (PI) underfill were the smallest than that of bumps with benzocyclobutene (BCB) and epoxy resin (EP) underfill. Additionally, the temperature, thermal stress, and displacement of the bumps were also affected by the applied current density and the size of the bumps. © 2023 IEEE.

关键词： Light emitting diodes

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Lightweight holographic near-eye display system with self-charging capability using solar energy

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Photonics Research 2025年第7期13卷 1792-1799页

作者： Changyu WangYuan XuHong Xu Juan Liu Beijing Engineering Research Center for Mixed Reality and Advanced Display MoE Key Laboratory of Photoelectronic Imaging Technology and System School of Optics and Photonics Beijing Institute of Technology Beijing 100081 China

The near-eye display feature in emerging spatial computing systems produces a distinctive visual effect of mixing virtual and real worlds. However, its application for all-day wear is greatly limited by the bulky structure, energy expenditure, and continuous battery heating. Here, we propose a lightweight holographic near-eye display system that takes advantage of solar energy for self-charging. To guarantee the collection of solar energy and near-eye display without crosstalk, we implement holographic optical elements (HOEs) to diffract sunlight and signal light into a common waveguide. Then, small-area solar cells convert the collected solar energy and power the system. Compact power supply components replace heavy batteries, thus contributing to the lightweight design. The simple acquisition and management of solar energy provide the system with sustainable self-charging capability. We believe that the lightweight design and continuous energy input solution will significantly promote the popularity of near-eye display in our daily lives.

关键词： Holographic displays Near eye displays Solar cells Solar energy Thin film solar cells Total internal reflection

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Fabrication and Study of Micro-LED Quantum Dot Color Conversion Layer Based on Inkjet Printing 20

Fabrication and Study of Micro-LED Quantum Dot Color Convers...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Wang, Xinyi Zhou, Haojie Ji, Xiaoxiao Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai200072 China School of Materials Science and Engineering Shanghai University Shanghai200072 China

ISBN: (纸本)9798350385373

In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical crosstalk between different sub-pixels, a black matrix (BM) layer with a thickness of 15 μm was proposed. Furthermore, to protect quantum dots (QDs), a SiO2 passivation layer with a thickness of 3 nm was uniformly deposited on the entire pattern by Atomic Layer Deposition (ALD). Subsequently, a pixel array featuring a sub-pixel size of 37.5 μm and a line width of 2 μm was fabricated on the BM layer treated with Reactive Ion Etching (RIE), and the thickness of the QDCC layer was controlled by RIE. The external quantum efficiencies of the red and green QDCC layer were 12.9% and 18.2%, respectively, and the emission spectra had blue light being transmitted, accompanied by a slight redshift. This research addresses the gaps in display applications and holds promise for the future advancement of Micro-LED display technology. © 2023 IEEE.

关键词： Atomic layer deposition

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Simulation of Bonding and Reliability for Micro-Led Array Based on Copper Pillar Bump

Simulation of Bonding and Reliability for Micro-Led Array Ba...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Hao Fu Zhu Yang Xinhui Meng Hong Fan Xiuzhen Lu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

With the rapid development of automotive electronics and near-eye displays, more stringent requirements have appeared for the heterogeneous integration technology of Micro-LED. Copper pillar bumps, which offer enhanced electrical conductivity, thermal conductivity, and mechanical properties, can meet the demands for higher density and smaller size packaging in Micro-LED array applications. In Micro-LED system integration, bonding plays a critical role as the bonding conditions significantly influence the performance and reliability of Micro-LED. Consequently, it is essential to investigate the effects of bonding conditions on Micro-LED devices to ensure optimal performance and reliability of copper pillar bumps. A model with copper pillar bumps and Micro-LED chips was presented with a bonding simulation and parameter analysis performed in this paper. The finite element method was utilized to examine the thermal-mechanical coupling of one quarter of a $5 \times 5$ Micro-LED array model in this paper. The stress and deformation of the bumps during the bonding process and the effects of bonding conditions on the stress and deformation of the bumps was investigates.

关键词： Performance evaluation Deformation Conductivity Fatigue Bonding forces Thermal conductivity Copper Reliability Bonding Stress

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A Method of Constructing and Automatically Labeling Radio Frequency Signal Training Dataset for UAV 48

A Method of Constructing and Automatically Labeling Radio Fr...

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48th IEEE International Conference on Acoustics, Speech and Signal Processing, ICASSP 2023

作者： Liu, Chao Ma, Ruipeng Si, Zheng Chi, Mingmin Fudan University School of Computer Science Shanghai Key Laboratory of Data Science China Zhengzhou Zhongke Institute of Integrated Circuit and System Application China Zhengzhou University School of Cyber Science and Engineering China Zhengzhou University Henan Institute of Advanced Technology China

ISBN: (纸本)9781728163277

The problem of signal detection and classification of multiple UAVs can be solved using object detection techniques in computer vision. However, this requires collecting and labeling a large amount of reliable raw data. Since the UAV signal dataset cannot be directly applied to object detection, we propose a method using time-frequency domain filtering and automatic labeling to construct a large-scale time-frequency spectrogram dataset. Experimental results show that the average recognition accuracies of image transmission signals and remote control signals under interference conditions are 97% and 82%, respectively, while the average errors of signal parameters are 0.93% and 5.57%. © 2023 IEEE.

关键词： Object detection

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1-1: Oxide Semiconductor Thin-Film Transistors with High Mobility and Stability

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 6-7页

作者： Guowen Yan Dejian Wang Xiaoqi Sun Pan Wen Cong Peng Lin Xu Lidong Ding Fa-Hsyang Chen Xifeng Li Wangfeng Xi Rubo Xing Junfeng Li Hefei Visionox Technology Co. Ltd. Hefei Anhui China 230000 Kunshan Govisionox Optoelectronics Co. Ltd. Suzhou Jiangsu China 215301 Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai China 200072

This paper presents a oxide thin film transistors with high mobility by a new fabricate method. The high mobility TFT with ultra-high mobility of 55cm 2 /Vs has been obtained, and the PBTS and NBTS has also been optim... 详细信息

关键词： Mobility Oxide TFT AMOLED Stability

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Efficient and stable hybrid perovskite-organic light-emitting diodes with external quantum efficiency exceeding 40 per cent

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Light(Science & applications) 2024年第7期13卷 1364-1371页

作者： Lingmei Kong Yun Luo Qianqian Wu Xiangtian Xiao Yuanzhi Wang Guo Chen Jianhua Zhang Kai Wang Wallace CHChoy Yong-Biao Zhao Hongbo Li Takayuki Chiba Junji Kido Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China. Institute of Nanoscience and Applications Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055China. Department of Electrical and Electronic Engineering The University of Hong KongHong KongChina. Department of Physics and Lakeside AR/VR Laboratory International Joint Research Center for Optoelectronic and Engineering ResearchYunnan UniversityKunming 650091China. Experimental Center of Advanced Materials School of Materials Science and EngineeringBeijing Institute of TechnologyBeijing 100081China. Graduate School of Organic Materials Science Frontier Center for Organic MaterialsYamagata University4-3-16 JonanYonezawa 992–8510Japan

Light-emitting diodes(LEDs)based on perovskite semiconductor materials with tunable emission wavelength in visible light range as well as narrow linewidth are potential competitors among current light-emitting display technologies,but still suffer from severe instability driven by electric ***,we develop a stable,efficient and highcolor purity hybrid LED with a tandem structure by combining the perovskite LED and the commercial organic LED technologies to accelerate the practical application of *** LED and organic LED with close photoluminescence peak are selected to maximize photon emission without photon reabsorption and to achieve the narrowed emission *** designing an efficient interconnecting layer with p-type interface doping that provides good opto-electric coupling and reduces Joule heating,the resulting green emitting hybrid LED shows a narrow linewidth of around 30 nm,a peak luminance of over 176,000 cd m^(−2),a maximum external quantum efficiency of over 40%,and an operational half-lifetime of over 42,000 h.

关键词： diodes narrow quantum

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Dynamic hybrid visual-thermal multimodal perception neuromorphic devices based on defect modulation of electrospun nanofibers

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International Journal of Extreme Manufacturing 2025年第2期7卷 749-761页

作者： Shengkai Wen Yanan Liu Yi Li Liang Xie Jun Li Jianhua Zhang School of Microelectronics Shanghai UniversityShanghai 201800People’s Republic of China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072People’s Republic of China School of Electronic Information and Electrical Engineering Shanghai Jiao Tong UniversityShanghai 200240People’s Republic of China

Neuromorphic devices,inspired by the intricate architecture of the human brain,have garnered recognition for their prodigious computational speed and sophisticated parallel computing ***,the primary mode of external information acquisition in living organisms,has garnered substantial scholarly *** numerous studies simulating the retina through optical synapses,their applications remain circumscribed to single-mode ***,the pivotal role of temperature,a fundamental regulator of biological activities,has regrettably been relegated to the *** address these limitations,we proffer a neuromorphic device endowed with multimodal perception,grounded in the principles of light-modulated *** device seamlessly accomplishes dynamic hybrid visual and thermal multimodal perception,featuring temperature-dependent paired pulse facilitation properties and adaptive ***,our meticulous examination of transfer curves,capacitance–voltage(C–V)tests,and noise measurements provides insights into interface and bulk defects,elucidating the physical mechanisms underlying adaptive storage and other ***,the device demonstrates a variety of synaptic functionalities,including filtering properties,Ebbinghaus curves,and memory applications in image ***,the digital recognition rate achieves a remarkable value of 98.8%.

关键词： neuromorphic devices electrospinning defect modulation dynamic hybrid multimodal perception adaptive storage

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A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts

A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate ...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Kailin Ren Yuan An Zhuang Wu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

P-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is currently the mainstream solution to realize enhancement mode GaN-based power electronic devices, but the influence of Schottky contact or ohmic contact on the device characteristics is still an issue to be further comparatively studied. In this paper, the impacts of Schottky and ohmic-type gate contacts on device performances such as transfer characteristics, transconductance and breakdown voltage of p-GaN gate AlGaN/GaN HEMT devices were studied by TCAD simulation. In Schottky-gate devices, the gate leakage is lower, and a larger threshold voltage (>6V) can be obtained by adjusting the parameters of the p-GaN cap layer, but as the threshold voltage increases, the drain current density will be correspondingly suppressed. In contrast, the threshold voltage of ohmic-gate devices is relatively stable and the drain current density is larger. In addition, ohmic-gate devices exhibit superior voltage withstand capability, but ohmic-type gate devices suffer serious gate leakage problem. Then the influence of Schottky- and ohmic- gate contacts on the stability of p-GaN gate AlGaN/GaN HEMT is studied. It is found that the threshold voltage of both devices is unstable.

关键词： HEMTs Logic gates Power system stability Threshold voltage Stability analysis Wide band gap semiconductors Gate leakage

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Organic Memristor Based on High Planar Cyanostilbene/Polymer Composite Films

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Chemical Research in Chinese Universities 2023年第1期39卷 121-126页

作者： ZHAO Jinjin LI Wei WANG Xuechen WEI Xiao ZHU Huiwen QU Wenshan MEN Dandan GAO Zhixiang WEI Bin GAO Hanfei WU Yuchen Department of Physics Shanxi Datong UniversityDatong037009P.R.China Key Laboratory of Bio-inspired Materials and Interfacial Science Technical Institute of Physics and ChemistryChinese Academy of SciencesBeijing100190P.R.China Ji Hua Laboratory Foshan528000P.R.China Shanxi Province Key Laboratory of Microstructure Electromagnetic Functional Materials Institute of Solid State PhysicsShanxi Datong UniversityDatong037009P.R.China School of Chemistry and Chemical Engineering Shanxi Datong UniversityDatong037009P.R.China Key Laboratory of Advanced Display and System Applications Ministry of EducationSchool of Mechatronic Engineering and AutomationShanghai UniversityShanghai200072P.R.China

Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent *** this paper,organic resistive switching memory(ORSM)based on(Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA)and polymer poly(N-vinylcarbazole)(PVK)composite film was prepared by spin-coating *** performance based on NNA:PVK composite films with different mass fractions of NNA were systematically *** ORSM based on PVK:40%(mass fraction)NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff)of 24.1,endurance of 68 times and retention time of 104 s,a“SET”voltage(Vset)of−0.55 V and a“RESET”voltage(Vreset)of 2.35 *** resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK *** holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias,which caused the transforming of the conductive way of charges,that is the resistive behaviors in the *** study provides a promising platform for the fabrication of ORSM with high performance.

关键词： Organic memristor Resistive switching Polymer/molecule composite film

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