Nanocrystalline WC-Co composite powder and coated tungsten diamond by using vacuum vapor deposition were consolidated by the spark plasma sintering （SPS） process to prepare diamond-enhanced WC-Co cemented carbide co...
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Nanocrystalline WC-Co composite powder and coated tungsten diamond by using vacuum vapor deposition were consolidated by the spark plasma sintering （SPS） process to prepare diamond-enhanced WC-Co cemented carbide composite materials. The interface microstructures between coated tungsten diamond and WC-Co cemented carbide matrix were investigated by scanning electron microscopy （SEM） and energy dispersive X-ray spectroscopy （EDXS）. The results showed that there is a transitional layer between the diamond and the matrix, in which the carbon content is 62.97wt.%, and the content of cobalt in the transitional zone is 6.19wt.%; the content of cobalt in the WC-Co cemented carbide matrix is 6.07wt.%, in which the carbon content is 15.95wt.%, and the content of cobalt on the surface of diamond is 7.30wt.%, in which the carbon content is 80.38wt.%. The transitional zone prevents the carbon atom of the diamond from spreading to the matrix, in which the carbon content does coincide with the theoretical value of the raw nanocomposite powders, and the carbon content forms a graded distribution among the matrix, transitional zone, and the surface of diamond; after the 1280℃ SPS consolidated process the diamond still maintains a very good crystal shape, the coated tungsten on the surface of the diamond improves thermal stability of the diamond and increases the bonding strength of the interface between the diamond and the matrix.
A series of new microwave dielectric ceramics Ba3-nLa1+nTinNb3-nO12 (n=0,1,2) were prepared in the BaO-La2O3-TiO2-Nb2O5 system by high temperature solid-state reaction route. The phase and structure of the ceramics we...
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A series of new microwave dielectric ceramics Ba3-nLa1+nTinNb3-nO12 (n=0,1,2) were prepared in the BaO-La2O3-TiO2-Nb2O5 system by high temperature solid-state reaction route. The phase and structure of the ceramics were characterized by X-ray diffraction, scanning electron microscope, and microwave dielectric properties measurements. These samples were identified as single phase and adopted A4B3O12-type cation-deficient hexagonal perovskite structure, which can be described as consisting of identical perovskite-like blocks, three corner-sharing BO6 octahedra thick, separated by layers of vacant octahedral. These ceramics have high dielectric constants in the range of 48-42, high quality factors (Q×f) up to 38 000 GHz, and low temperature coefficient of resonant frequencies (τf) in the range of (-40-+6)×10-6℃-1. With increasing content of La and Ti, the dielectric constants slightly decrease butτf gradually increases.
Thermogravimetry (TG-DTA) was used to study the heat resistance characteristics and curing heat decomposition kinetics of ATPU/epoxy resin system. Results showed that the decomposition temperature of the cured ATPU-2/...
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Thermogravimetry (TG-DTA) was used to study the heat resistance characteristics and curing heat decomposition kinetics of ATPU/epoxy resin system. Results showed that the decomposition temperature of the cured ATPU-2/E-44 was higher than that of ATPU-1.5/E-44. The calculation results of decomposition reaction showed that the cured system of ATPU-2/E-44 had better heat resistance, the reaction decomposition active energy of ATPU-2/E-44 system was higher than that of ATPU-1.5/E-44.
A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mob...
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A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer (SiO2) thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping a low equivalent oxide thickness. Simulated results agree reasonably with experimental data.
WC- 10Co nanocomposite powder produced by spray pyrolysis-continuoas reduction and carbonization technology was used, and the vacuum sinteriag plus sinterhip process was cdopted to prepare ultrafine WCCo cemented carb...
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WC- 10Co nanocomposite powder produced by spray pyrolysis-continuoas reduction and carbonization technology was used, and the vacuum sinteriag plus sinterhip process was cdopted to prepare ultrafine WCCo cemented carbide. The microstructure, grain size, porosity, density, Rockwell A hardness （ HRA ）, transverse rupture strength （ TRS ） , saturated magnetization and coercivity force were studied. The experimental results show that average grain size of the sample prepared by vacuum sintering plas sinterhip technology was about 420 nm, transverse rupture strength was more than 3460 MPa, and Rockwell A hardness of sintered specimen was more than 92.5. Ultrafine WC- 10Co cemented carbide with high strength and high hardness is obtained.
Yttrium-filled sku, tterudites Yy Fex Co4-x Sb12 （ Y =0- 0. 40 ） were synthesized. The effect of Y filling fraction on thermoelectric properties of Yy Fex Co4-x Sb12 was investigated. All samples showed p-type condu...
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Yttrium-filled sku, tterudites Yy Fex Co4-x Sb12
（ Y =0- 0. 40 ） were synthesized. The effect of Y filling fraction on thermoelectric properties of Yy Fex Co4-x Sb12
was investigated. All samples showed p-type conduct. The electrical conductivity decreased with increasing filling fraction y. The Seebeck coefficient inreased with increasing temperature. The lattice thermal conductivity decreased with increasing filling fraction y and showed the minimum value at a certain filling fraction y = 0.3. The effect of different filling atoms M（ M： Ba, Ce, Y） on the lattice thermal conductivity of MyFexCo4-xSb12 was discussed. The maximum ZT value of O. 7 was obtained for Y0.06 Fe0.7 Co3.3 Sb12 at 750 K.
The rods that were shaped from nanocrystalline WC- 10.21 Co-0.42 VC/ Cr3 C2 （ wt% ） composite powders by using powder extrusion molding （PEM） were investigated. The nanocrystalline WC- 10.21 Co- 0. 42 VC/ Cr3 C2 ...
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The rods that were shaped from nanocrystalline WC- 10.21 Co-0.42 VC/ Cr3 C2 （ wt% ） composite powders by using powder extrusion molding （PEM） were investigated. The nanocrystalline WC- 10.21 Co- 0. 42 VC/ Cr3 C2 （ wt% ） composite powders were prepared by the spray thermal decomposition-continuous reduction and carburization technology. In order to improve the properties of rods shaped by using powder extrusion molding, the cold isostatic pressing （CIP） technology was used before or after debinding. Specimens were siutered by vacuum siutering and hot isostatic pressing （HIP）. The density, Rockwell A hardness, magnetic coercivity , and magnetic saturation induction of siutered specimen were measured. The microstructure of the green bodies and the siutered specimens was studied by scanning electron microscopy （SEM）. Results show that the rod formed by using powder extrusion molding after debinding and followed by cold isostatic pressing can be siutered to 99.5% density of composite cemented carbide rods with an average grain size of about 200- 300 nm, magnetic coercivity of 30.4 KA / m, Rockwell A hardness of 92.6 and magnetic saturation induction of 85% . Superfine WC- 10 Co cemented carbide rods with excellent properties were obtained.
SiCp/ Al composites containing high volume fraction of SiC particles were fabricated by spark plasma sintering （SPS）. and their thermophysical properties, such as thermal conductivity （TC） and *** of thermal expan...
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SiCp/ Al composites containing high volume fraction of SiC particles were fabricated by spark plasma sintering （SPS）. and their thermophysical properties, such as thermal conductivity （TC） and *** of thermal expansion （CTE）, were characterized. The electric field in the vacuum column was calculated and the generation condition of the spark was analyzed. Spark can be generated by a low current if the cavity in the green body is large enough. A high relative density of the composites was successfully achieved through the optimization of sintering parameters. The measured TCs of the SiCp/ Al composites fabricated by SPS are higher than 195 W/m ·K.
Both silica and boron-silica glass materials doped with terbium organic complex were prepared by in situ sol-gel method respectively. XRD and SEM measurements were performed to verify the non-crystalline structure of ...
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Both silica and boron-silica glass materials doped with terbium organic complex were prepared by in situ sol-gel method respectively. XRD and SEM measurements were performed to verify the non-crystalline structure of the glass. The influence of the glass contents on the structure of the glass and the erwrgy level of the doped Tb （Ⅲ） ions was analyzed by the emission spectra and IR spectra. The effect of B2O3 on the photolumirwscence properties of rare earth organic complex in silica- based glass was investigated. The IR spectra indicate that the in situ sylthesized rare earth complex molecule was confined to the micropores of the bost and the vibration of the ligands was frozen. When B2O3 was added into the silica host gel, B2O3 had little influence on the noncrystallirw structure of the glass, and BO3 triangle, which had a layer structure different from the silica framework, could form. So the silica network became more inhomogenous, and the luminescence of terbium complexes was quenched with the increase of the B2O23 amount.
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