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China Semiconductor Technology International Conference (CSTIC)

作者： Fan Zhang Zhaohao Zhang Jiali Huo Qingzhu Zhang Gaobo Xu Zhenhua Wu Genquan Han Huaxiang Yin Yan Liu State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an China Integrated Circuit Advanced Process R&D Center and the State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics CAS Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350362190

ISBN: (纸本)9798350362206

In this work, the film thickness-dependent threshold voltage $(V_{\text{TH}})$ variation is investigated theoretically through statistical Monte Carlo simulation. An improved VTH variation is found in the 6 nm $\text{Hf}_{0.5}\text{Zr}_{0.5}\mathrm{O}_r$ (HZO) gate insulator under the coupling effect of ferroelectric parameters and interface charge density fluctuations, in comparison to thicker HZO films. The increase in trap density significantly deteriorates the $V_{\text{TH}}$ variation, which can be mitigated by the enlarged charge response in the thin film. This work provides a guideline for variation performance improvement in building reliable ultra-scale integrated circuits.

关键词： Integrated circuits Performance evaluation Couplings Monte Carlo methods Fluctuations Buildings Iron

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Perilipin 5 regulates hepatic stellate cell activation and high-fat diet-induced non-alcoholic fatty liver disease

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Animal Models and Experimental Medicine 2024年第2期7卷 166-178页

作者： Xuecui Yin Lin dong Xiaohan Wang Zhenzhen Qin Yuying Ma Xiaofei Ke Ya Li Qingde Wang Yang Mi Quanjun Lyu Xia Xu Pengyuan Zheng Youcai Tang Department of Internal Medicine the Fifth Affiliated Hospital of Zhengzhou UniversityZhengzhouChina Department of Pediatrics the Fifth Affiliated Hospital of Zhengzhou UniversityZhengzhouChina Department of Clinical Nutrition the First Affiliated Hospital of Zhengzhou UniversityZhengzhouChina Key Laboratory of Advanced Drug Preparation Technologies Ministry of Education of ChinaCo-innovation Center of Henan Province for New drug R&D and Preclinical SafetySchool of Pharmaceutical SciencesZhengzhou UniversityZhengzhouChina Department of Pediatrics GastroenterologyHenan Key Laboratory of Rehabilitation MedicineHenan Joint International Research Laboratory of Chronic Liver Injury and Henan Provincial Outstanding Overseas Scientists Chronic Liver Injury Studiothe Fifth Affiliated Hospital of Zhengzhou UniversityZhengzhouChina

Background:Nonalcoholic fatty liver disease(NAFLd)is one of the most common chronic liver diseases *** stellate cells(HSCs)are the major effector cells of liver *** contain abundant lipid droplets(Lds)in their cytoplasm during *** 5(PLIN 5)is a Ld surface-associated protein that plays a crucial role in lipid ***,little is known about the role of PLIN 5 in HSC ***:PLIN 5 was overexpressed in HSCs of Sprague–dawley rats by lentivirus *** the same time,PLIN 5 gene knockout mice were constructed and fed with a high-fat diet(HFd)for 20 weeks to study the role of PLIN 5 in *** corresponding reagent kits were used to measure TG,GSH,Caspase 3 activity,ATP level,and mitochondrial dNA copy *** analysis of mice liver tissue metabolism was performed based on UPLC-MS/***,mitochondrial function,cell proliferation,and apoptosis-related genes and proteins were detected by western blotting and ***:Overexpression of PLIN 5 in activated HSCs led to a decrease in ATP levels in mitochondria,inhibition of cell proliferation,and a significant increase in cell apoptosis through AMPK *** addition,compared with the HFd-fed C57BL/6J mice,PLIN 5 knockout mice fed with HFd showed reduced liver fat deposition,decreased Ld abundance and size,and reduced liver ***:These findings highlight the unique regulatory role of PLIN 5 in HSCs and the role of PLIN 5 in the fibrosis process of NAFLd.

关键词： AMPK apoptosis hepatic stellate cell liver fibrosis perilipin 5

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Influence of crosslink density on the interfacial bonding performance for epoxy resin towards load-induced calcium silicate hydrate gel

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JOUrNAL OF NON-CrYSTALLINE SOLIdS 2023年第1期619卷

作者： Sun, dawei Wang, Jiaxin Wang, Hui Yan, Zheng Ma, Wenxu Ma, Xiaoyu Wang, Yali Ma, Zhongcheng Jin, Xiaodong Sun, Shibing Cui, Suping Wang, Zhiyong Beijing Univ Technol Coll Mat Sci & Engn Beijing 100124 Peoples R China Beijing Bldg Mat Acad Sci Res State Key Lab Solid Waste Reuse Bldg Mat Beijing 100041 Peoples R China Key Technol R&D Program CNBM Beijing Peoples R China Northeastern Univ Inst Artificial Intelligence & Data Sci Shenyang 110819 Peoples R China Beijing Inst Technol Sch Mechatron Engn Beijing 100081 Peoples R China

In epoxy-amine based self-healing cement-based materials, the uncontrollable stoichiometric ratio of both components in the cracks leads to the cured epoxy resin with various crosslink densities. Investigation on the interaction mechanism between cured epoxy resin and C-S-H gel promotes to optimize the final self-healing performances. In this work, the interaction between load-induced broken panels of C-S-H gel and cured epoxy resins with different crosslink densities (e.g., 0.23, 0.77, and 0.97) was studied through molecular dynamic methods. It was found that crosslink density plays an essential role in the geometrical size and atom distributions. Phase separation occurs at the low crosslink density due to the aggregation of amine molecules. The generation of fresh crosslink points limits the free motion of epoxy molecules with higher crosslink density. Meanwhile, the cured epoxy resin with higher crosslink density causes a high porosity in the interfacial region between the epoxy resin and C-S-H gel substrates, degrading the mechanical performance of materials.

关键词： Crosslink density Epoxy resin Molecular dynamics deformation and fracture process

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AIrIS:Artificial Intelligence Enhanced Signal Processing in reconfigurable Intelligent Surface Communications

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China Communications 2021年第7期18卷 158-171页

作者： Shun Zhang Muye Li Mengnan Jian Yajun Zhao Feifei Gao State Key Laboratory of Integrated Services Networks Xidian UniversityXi’an 710071China Algorithm Department of Wireless Product R&D Institute ZTE CorporationBeijing 100029China Institute for Artificial Intelligence Tsinghua University(THUAI)State Key Lab of Intelligent Technologies and SystemsTsinghua UniversityBeijing National Research Center for Information Science and Technology(BNRist)Department of AutomationTsinghua University Beijing100084China

reconfigurable intelligent surface(rIS)is an emerging meta-surface that can provide additional communications links through reflecting the signals,and has been recognized as a strong candidate of 6G mobile communications ***,it has been recently admitted that implementing artificial intelligence(AI)into rIS communications will extensively benefit the reconfiguration capacity and enhance the robustness to complicated transmission *** the conventional model-driven approaches,AI can also deal with the existing signal processing problems in a data-driven manner via digging the inherent characteristic from the real ***,AI is particularly suitable for the signal processing problems over rIS networks under unideal scenarios like modeling mismatching,insufficient resource,hardware impairment,as well as dynamical *** one of the earliest survey papers,we will introduce the merging of AI and rIS,called AIrIS,over various signal processing topics,including environmental sensing,channel acquisition,beamforming design,and resource scheduling,*** will also discuss the challenges of AIrIS and present some interesting future directions.

关键词： reconfigurable intelligent surface artifi-cial intelligence deep learning deep reinforcement learning signal processing

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Ultrasensitive and high-speed AlGaN/AlN solarblind ultraviolet photodetector:a full-channelself-depleted phototransistor by a virtual photogate

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Photonics research 2022年第9期10卷 2229-2238页

作者： JIABING LU ZESHENG LV XINJIA QIU SHIQUAN LAI HAO JIANG School of Electronics and Information Technology Sun Yat-sen UniversityGuangzhou 510006 China State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-sen UniversityGuangzhou 51006 China Guangdong Engineering Technology R&D Center of Compound Semiconductors and Devices Sun Yat-sen UniversityGuangzhou 510006China

High sensitivity,high solar rejection ratio,and fast response are essential characteristics for most practical applications of solar-blind ultraviolet(UV)*** features,however,usually require a complex device structure,complicated process,and high operating ***,a simply structured n-Al Ga N/Al N phototransistor with a self-depleted full channel is *** self-depletion of the highly conductive n-Al Ga N channel is achieved by exploiting the strong polarization-induced electric field therein to act as a virtual *** resulting two-terminal detectors with interdigital Ohmic electrodes exhibit an ultrahigh gain of 1.3×10^(5),an ultrafast response speed with rise/decay times of 537.5 ps/3.1μs,and an ultrahigh Johnson and shot noise(flicker noise)limited specific detectivity of 1.5×10^(18)(4.7×10^(16))Jones at 20-V ***,a very low dark current of the order of~p A and a photo-to-dark current ratio of above 10^(8)are obtained,due to the complete depletion of the n-Al_(0.5)Ga_(0.5)N channel layer and the high optical *** proposed planar phototransistor combines fabrication simplicity and performance advantages,and thus is promising in a variety of UV detection applications.

关键词： transistor channel polarization

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Ultrahigh detectivity,high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

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Photonics research 2022年第1期10卷 111-119页

作者： KAI WANG XINJIA QIU ZESHENG LV ZHIYUAN SONG HAO JIANG School of Electronics and Information Technology Sun Yat-sen UniversityGuangzhou 510275China State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-sen UniversityGuangzhou 510275China Guangdong Engineering Technology R&D Center of Compound Semiconductors and Devices Sun Yat-sen UniversityGuangzhou 510275China

High detectivity is essential for solar-blind deep-ultraviolet(dUV)light detection because the dUV signal is extremely weak in most *** this work,we report ultrahigh-detectivity AlGaN-based solar-blind heterojunction-field-effect phototransistors fabricated utilizing dual-float-photogating *** p^(+)-Al_(0.4)GaN layer and Al_(0.4)GaN absorber layer deposited on the Al_(0.6)GaN barrier serve as top pin-junction photogate,while the thin Al_(0.4)GaN channel layer with a strong polarization field inside acts as virtual back *** to the effective depletion of the two-dimensional electron gas at the A1_(0.6)Ga_(0.4)N/Al_(0.4)Ga_(0.6)N heterointerface by the top photogate,the dark current was suppressed below 2 pA in the bias range of 0 to 10 V.A high photo-to-dark current ratio over 10^(8) and an optical gain of 7.5×10^(4) were demonstrated at a bias of 5 *** analysis indicates that the optical gain can be attributed to the joint action of the floating top and back photogates on the channel *** a result,a record high flicker noise(Johnson and shot noise)limited specific detectivity of 2.84×10^(15)(2.91×10^(17))cm Hz^(0.5)W^(-1) was ***,high response speed at the microsecond level was also shown in the *** work provides a promising and feasible approach for high-sensitivity dUV detection.

关键词： heterojunction AlGaN polarization

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Ge-doped In2O3: First demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/reliability Tradeoff for High Performance Oxide TFTs

Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen...

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Symposium on VLSI Technology

作者： Jiayi Wang Ziheng Bai Kuo Zhang Zhicheng Wu di Geng Yang Xu Nannan You Yuxuan Li Guanhua Yang Ling Li Shengkai Wang Ming Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Chinese Academy of Sciences Institute of Microelectronics Beijing China Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Institute of Microelectronics Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

For the first time, we demonstrated high-performance Ge-doped In 2 O 3 (IGeO) thin film transistors (TFTs). Through comprehensive understanding of Ge-induced oxygen vacancy (Vo) consumption and crystallization mechanisms, the Vo generation is actively suppressed while increasing its crystallinity. The proposed IGeO TFT with fractional Ge doping (atomic concentration ~0.4% by SIMS) presents an enhanced reliability (Δ Vth = 10 m V, +4 V for 3600 s) with high mobility (µ FE = 62.7 cm2 V −1 S −1 ), which makes it a promising way to overcome the mobility/reliability tradeoff in In 2 O 3 -based TFTs.

关键词： Oxygen Semiconductor device reliability doping Crystallization Very large scale integration Benchmark testing Germanium

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distribution Characteristic of Sulfanilamide Antibiotics between Water and Extracellular Polymeric Substance from Municipal Sludge

SSRN

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SSrN 2024年

作者： Cheng, Ming Shi, Chen Zhao, Bo-Han Wang, Tai-Yue Zhang, Nan Hao, Li-Ting Liu, ran-Bin Hao, Xiao-di Sino-Dutch R&D Centre for Future Wastewater Treatment Technologies Key Laboratory of Urban Stormwater System and Water Environment Beijing University of Civil Engineering and Architecture Beijing100044 China Institute of Agricultural Environment and Sustainable Development Chinese Academy of Agriculture Sciences Beijing100081 China

The interaction between extracellular polymeric substance (EPS) in municipal sludge and pollutants in wastewater is of great significance for sewage treatment, resource recovery and sludge treatment and disposal in sewage treatment plant (WWTPs). It is increasingly urgent to study the distribution coefficient (expressed as log KdOC) of sulfonamide antibiotics (SAs) in sludge derived dissolved organic carbon (dOC), namely EPS. In this investigation, through the balance experiment, the concentrations of three common SAs were measured under the system of four kinds of EPS, alkaline extraction EPS (AEPS) and alginate-like extracellular polymer (ALE), which were extracted from aerobic granular sludge (AGS) from WWTPs and conventional activated sludge (CAS), and the Log KdOC values were calculated. The results showed that the average value of Log KdOC of AEPS of AGS was 3.05, higher than that of other dOC, and ALE showed a negative value of KdOC to indicate an inhibitory effect on dissolution, which indicated that the composition of dOC directly affected the distribution coefficient of SAs. The results of a variety of SAs mixed system samples show that the Log KdOC value of the three SAs from is SMX > SPd > SdZ, which is due to the different physicochemical properties such as the polarity of several kinds of SAs. The results of 3d-EEM and fitting KOW and KdOC showed that there was a relative lack of aromatic proteins and humus-like substances dominated by tryptophan in the ALE system, while the hydrophobic interaction of aromatic proteins dominated by tryptophan was the main driving force in the binding process of AEPS and SAs. © 2024, The Authors. All rights reserved.

关键词： Antibiotics

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Infield corn kernel detection using image processing, machine learning, and deep learning methodologies under natural lighting

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EXPErT SYSTEMS WITH APPLICATIONS 2024年第PartE期238卷

作者： Liu, Xiaohang Zhang, Zhao Igathinathane, C. Paulo, Flores Zhang, Man Li, Han Han, Xiongzhe Ha, Tuan Yiannis, Ampatzidis Hak-Jin, Kim Minist Educ Key Lab Smart Agr Syst Integrat Beijing 100083 Peoples R China China Agr Univ Key Lab Agr Informat Acquisit Technol Minist Agr & Rural Affairs Beijing 100083 Peoples R China North Dakota State Univ Dept Agr & Biosyst Engn Fargo ND 58102 USA Kangwon Natl Univ Coll Agr & Life Sci Dept Biosyst Engn Chunchon 24341 South Korea Kangwon Natl Univ Coll Agr & Life Sci Interdisciplinary Program Smart Agr Chunchon South Korea Thai Nguyen Univ Agr & Forestry Tuan M Ha Hitech Agriculture& Forestry R&D Ctr Thai Nguyen City 24119 Vietnam Univ Florida Southwest Florida Res & Educ Ctr Agr & Biol Engn Dept 2685 FL-29 Immokalee FL 34142 USA Seoul Natl Univ Coll Agr & Life Sci Dept Biosyst Engn Seoul South Korea Seoul Natl Univ Coll Agr & Life Sci Convergence Major Global Smart Farm Seoul South Korea

Machine vision has been increasingly used to address agricultural issues. One such case is corn field harvest losses and image-based object detection approaches, namely image processing, machine learning, and deep learning were investigated to detect and count infield corn kernels, immediately after harvest for combine harvester performance evaluation. A hand-held low-cost rGB camera was used to collect images with kernels of different backgrounds, based on which a 420 images dataset (200, 40, and 180 for training, validation, and testing, respectively) was generated. Three different models for kernel detection were constructed based on image processing, machine learning, and deep learning. For the imaging processing method, the images were preprocessed (color thresholding, graying, and erosion), followed by Hough circle detection to identify kernels. For the machine learning (cascade detector) and deep learning (Mask r-CNN, Efficientdet, YOLOv5, and YOLOX), models were trained, validated, and tested. Experimental results showed the overall performance of the deep learning network YOLOv5 was superior to the other approaches, with a small model size (89.3 MB) and a high model average precision (78.3 %) for object detection. The detection accuracy, undetection rate and F1 value were 90.7 %, 9.3 %, and 91.1 %, respectively, and the average detection rate was 55 fps. This study demonstrates that the YOLOv5 model has the potential to be used as a real-time, reliable, and robust method for infield corn kernel detection.

关键词： Infield corn kernel Object detection Image processing Machine learning deep learning

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Interface Treatment of Epitaxial SI FINFET Channel in replace Metal Gate with Simultaneously Performance Improvement and Leakage reduction

Interface Treatment of Epitaxial SI FINFET Channel in Replac...

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China Semiconductor Technology International Conference (CSTIC)

作者： renjie Jiang Lei Cao Wenjuan Xiong Jiaxin Yao Peng Wang Yadong Zhang Guanqiao Sang Lianlian Li Meihe Zhang Huaxiang Yin Jun Luo Integrated Circuit Advanced Process R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China State key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of the Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350362190

ISBN: (纸本)9798350362206

Channel surface defects are an important factor causing poor device interface characteristics and deterioration of sub-threshold characteristics. In order to reduce the interface trap density (dit) of epitaxial silicon FinFET devices and improve device performance, an in-situ steam generation (ISSG) oxidation and diluted hydrofluoric acid (dHF) cleaning method was proposed to repair the damaged channel surface and reduce the interface defect charge (Q it ) replace metal gate (rMG) module. The thickness of Fin top narrows, and Fin's steepness decreases, after interfacial ISSG oxidation treatment. The electrical results demonstrate that the SS for the NFET with interface treatment are decreased from 74.2 mv/dec to 70.97 mV/dec due to the interface improvement. At the same time, the leakage current reduced from 1.0E-2 μA to 5.67E-4 μA, and the Ion is increased by 16.89% compared with that of conventional FinFET without interface treatment.

关键词： Metals dH-HEMTs Maintenance engineering Logic gates FinFETs Oxidation Silicon

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