检索结果-内蒙古大学图书馆

SSRN 2022年

作者： Lu, Qiqing Wang, Jingkun Miao, Yanqin Guo, Yuanyuan Wang, Guoliang Dong, Jianhua Zhao, Min Wang, Hua Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education Taiyuan University of Technology Taiyuan030024 China Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering Taiyuan030024 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China College of Textile Engineering Taiyuan University of Technology Jinzhong030600 China

In this work, we successfully synthesized Ti3C2Tx-MXene nanosheets with a lateral dimension of 1~2 um by using wet-chemical etchant and sonication-assisted liquid-phase exfoliation method. After UV-ozone treatment, the work function for Ti3C2Tx-MXene nanosheets was adjusted to 5.14 eV well matching to indium tin oxide (ITO) anode (4.80 eV). Using Ti3C2Tx-MXene nanosheets as hole injection layer (HIL), Ir(ppy)3-based green organic light-emitting diodes (OLEDs) were fabricated, and the resulting devices exhibit a low turn-on voltage of 3.0 V and the high current efficiency, power efficiency and external quantum efficiency of 72.79 cd/A, 54.44 lm/W and 20.34%, which are obviously better than these of 67.38 cd/A, 50.38 lm/W and 18.65% for PEDOT:PSS-based reference device. Further, FIrpic- and Ir(pq)2acac-based blue and red OLEDs with Ti3C2Tx-MXene nanosheets HIL were demonstrated, which also show the significantly improved device efficiency of 44.56 cd/A, 32.44 lm/W and 22.07% for blue device and 39.17 cd/A, 38.54 lm/W and 21.90% for red device than these for corresponding PEDOT:PSS-based devices, proving the universal applicability of Ti3C2Tx-MXene nanosheets as HIL in OLEDs. The higher performance for Ti3C2Tx-MXene nanosheets-based devices can be attributed to the appropriate work function, high transmittance, high carrier mobility and good film forming property for Ti3C2Tx-MXene nanosheets. This is the first report about the MXene using as HIL in OLEDs, which opens up a new way to develop high-performance holes injection materials for solution-processed OLEDs. © 2022, The Authors. All rights reserved.

关键词： Organic light emitting diodes (OLED)

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On-chip ultra-compact hexagonal boron nitride topological ring-resonator in visible region

arXiv

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arXiv 2022年

作者： Wu, Min Yang, Yibiao Fei, Hongming Lin, Han Zhao, Xiaodan Kang, Lijuan College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan030024 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China Centre for Translational Atomaterials Faculty of Science Engineering and Technology Swinburne University of Technology HawthornVIC3122 Australia

Ultra-compact topological ring-resonators with chirality are important devices for quantum optics. However, there are limited demonstrations of chiral resonators, especially in the visible region. We proposed a topological photonic ring-resonator based on hexagonal boron nitride (hBN) valley photonic crystal (VPC). The spin-valley locking effect in VPC allows achieving robust unidirectional transmission of edge states in the visible region (600 nm-650 nm). As a result, a high quality factor (679.3) with a free spectral range of 15.2 nm in the visible region can be achieved in a hBN all-pass filter with a compact size (2.1 μm∗1.8 μm). In addition, we investigated the transmission properties of hBN ring-resonators with different shapes and combinations, confirming the flexibility of designing topological ring-resonators based on this principle. This design can be readily integrated with quantum photonic chips for broad applications. Copyright © 2022, The Authors. All rights reserved.

关键词： Photonic crystals

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High-performance chiral all-optical logic gate based on topological edge states of valley photonic crystal

arXiv

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arXiv 2022年

作者： Wang, Xiaorong Fei, Hongming Lin, Han Wu, Min Kang, Lijuan Zhang, Mingda Liu, Xin Yang, Yibiao Xiao, Liantuan College of Physics Taiyuan University of Technology Taiyuan030024 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China School of Science RMIT University MelbourneVIC3000 Australia Swinburne University of Technology HawthornVIC3122 Australia

For all-optical communication and information processing, it is necessary to develop all-optical logic gates based on photonic structures that can directly perform logic operations. All-optical logic gates have been demonstrated based on conventional waveguides and interferometry, as well as photonic crystal structures. Nonetheless, any defects in those structures will introduce high scattering loss, which compromises the fidelity and contrast ratio of the information process. Based on the spin-valley locking effect that can achieve defect-immune unidirectional transmission of topological edge states in valley photonic crystals (VPCs), we propose a high-performance all-optical logic OR gate based on a VPC structure. By tuning the working bandwidth of the two input channels, we prevent interference between the two channels to achieve a stable and high-fidelity output. The transmittance of both channels is higher than 0.8, and a high contrast ratio of 28.8 dB is achieved. Moreover, the chirality of the logic gate originated from the spin-valley locking effect allows using different circularly polarized light as inputs, representing "1" or "0", which is highly desired in quantum computing. The device's footprint is 18 × 12 μm 2, allowing high-density on-chip integration. In addition, this design can be experimentally fabricated using current nanofabrication techniques and will have potential applications in optical communication, information processing, and quantum computing. Copyright © 2022, The Authors. All rights reserved.

关键词： Logic gates

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Random distributed multi-pulse dynamics in mode-locked regimes of a highly nonlinear fiber ring laser

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Optical Fiber Technology 2025年 93卷

作者： Yueling Hao Lingzhen Yang Juanfen Wang Yuxin Bai Linlin Fan Weijie Ding Shengxiang Chen Jiahao Wang College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan Shanxi 030024 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan Shanxi 030024 China

The generation and transition dynamics of random distributed multi-pulse are studied numerically and experimentally in the mode-locked fiber laser. The influence of various cavity parameters on the generation of multi-pulse in the fiber laser is investigated and the random distributed multi-pulse with delta-like characteristics in the autocorrelation trace is generated numerically. The results show that the highly nonlinear fiber can significantly enhance the nonlinear effect in the cavity to effectively and quickly enter the multi-pulse region. By adding the highly nonlinear fiber to the fiber laser in the experiment, the random distributed multi-pulse is generated under appropriate polarization state and pump power, which is consistent with the simulation results. The transition dynamics of the variation in the number of pulses during the formation process of the random distributed multi-pulse is studied by using the time-stretch dispersive Fourier transform technology. The random distributed multi-pulse combines the advantages of both pulse and chaotic signals, with a higher peak-to-peak value and random distribution in the time interval between pulses. Our work provides fundamental insights into the evolution and dynamic behavior in random distributed multi-pulse and broaden its potential applications in the correlation fiber loop ring down sensing.

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Design of wavelength division multiplexing devices based on tunable edge states of valley photonic crystals

arXiv

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arXiv 2022年

作者： Han, YuHui Fei, HongMing Lin, Han Zhang, MingDa Liu, Xin Wang, XiaoRong Cao, BinZhao Yang, YiBiao Xiao, LianTuan Department of Physics and Optoelectronics Taiyuan University of Technology Taiyuan030024 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China Centre for Translational Atomaterials Faculty of Science Engineering and Technology Swinburne University of Technology HawthornVIC3122 Australia

Wavelength division multiplexing (WDM) devices are key elements of Photonic integrated circuits (PICs). Conventional WDM devices based on silicon waveguides and photonic crystals have limited transmittance due to high loss introduced by the strong backward scattering from defects. In addition, it is challenging to reduce the footprint of those devices. Here we theoretically demonstrate a WDM device in the telecommunication range based on all-dielectric silicon topological valley photonic crystal (VPC) structures. We tune its effective refractive index by tuning the physical parameters of the lattice in the silicon substrate, which can continuously tune the working wavelength range of the topological edge states, which allows designing WDM devices with different channels. The WDM device has two channels (1470 nm-1523 nm and 1548 nm-1609 nm), with contrast ratios of 22.4 dB and 24.9 dB, respectively. The principle of manipulating the working bandwidth of the topological edge states can be generally applied in designing different integratable photonic devices, thus it will find broad applications. Copyright © 2022, The Authors. All rights reserved.

关键词： Photonic devices

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Research on Highly Anti-Humidity and Selective NO2 Detection Based on GaN/MoO3 N-N Heterojunction

SSRN

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SSRN 2024年

作者： Hong, Yutao Han, Dan Li, Donghui He, Xiuli Zhao, Li Wang, Weidong Li, Hongwei Sang, Shengbo Liang, Hua Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Bioengineering Research Center Medical Innovation Research Division Chinese PLA General Hospital Beijing China Shanxi Academy of Medical Sciences China

Effective and accuratedetection of NO2 gas is crucial for protecting the environment and public health. In this work, balsam pear-like GaN/MoO3 porous nanosheets (GaN/MoO3) composites were synthesized by the in situ assembling, the hydrothermal method, and the nitridation process to detect NO2. A series of characterization methods were used to manifest the successful synthesis and to analyze the morphology and elemental composition features of GaN/MoO3 composites. The results of the gas-sensing experiments show that at the operating temperature of 225 °C, the gas sensor based on the optimal ratio of GaN/MoO3 composites exhibits a low theoretical limit of detection (0.78 ppb) for NO2, which is significantly improved compared with the limit of detection of MoO3 (5 ppm). Further, the response value of the sensor based on GaN/MoO3 composites to 200 ppm NO2 (44.74) is 4.36 times higher than that of the sensor based on pure GaN, with an improvement in stability. Meanwhile, the sensor also possessed excellent repeatability, selectivity, stability, and splendid anti-humidity ability at 15-70 % RH. The improved gas-sensing performance is ascribed to the unique microstructure of both GaN and MoO3, and the heterojunction effect between them. This work provides a way to improve the efficiency and anti-humidity ability of real-time monitoring of NO2 for the sensors of MoO3-based composite. © 2024, The Authors. All rights reserved.

关键词： Gallium nitride

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High-accuracy disposable micro-optical anti-counterfeiting labels based on single-molecule quantum coherence

arXiv

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arXiv 2025年

作者： Han, Shuangping Song, Kai Zan, Pengyu Yu, Changzhi Li, Ao Zhou, Haitao Qin, Chengbing Xiao, Liantuan College of Physics and Optoelectronics Engineering Taiyuan University of Technology Shanxi Taiyuan030024 China Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education Taiyuan University of Technology Taiyuan030024 China Department of Nuclear Medicine The First Hospital of Shanxi Medical University Collaborative Innovation Center of Molecular Imaging Precision Medical Shanxi Medical University Taiyuan030001 China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser Spectroscopy Shanxi University Shanxi Taiyuan030006 China

In this work we introduce an innovative approach to single-molecule quantum coherence (SMQC)-based disposable micro-optical anti-counterfeiting labels. This method facilitates the editing and reading of anti-counterfeiting with single molecules used as the anti-counterfeiting information labels. The label is meticulously crafted through inkjet printing technology, while its authentication is achieved via frequency domain imaging. Through a validation process including experimental demonstration, numerical simulation, and neural network analysis, we demonstrate the feasibility of this approach, further validate the integrity of the miniature anti-counterfeiting information storage, and verify the signal extraction accuracy with the recognition accuracy of the labels is consistently above 99.995%. The combination of SMQC-based disposable micro-optical anti-counterfeiting technology is expected to enable more precise preparation of single-molecule-array chips, thus providing a crucial foundation for the advancement of high-tech and smart manufacturing industries. Copyright © 2025, The Authors. All rights reserved.

关键词： Ink jet printing

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Highly Sensitive and Rapidly Responding Room-Temperature NH3 Gas Sensor that is Based on Exfoliated Black Phosphorus

SSRN

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SSRN 2022年

作者： Han, Dan Han, Xiaomei Zhang, Xiaqin Wang, Weili Li, Donghui Li, Hongwei Sang, Shengbo Shanxi Province Cancer Hospital Chinese Academy of Medical Sciences Cancer Hospital Shanxi Medical University Taiyuan030000 China Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Information and Computer Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System The Ministry of Education Taiyuan University of Technology Taiyuan030024 China

Black phosphorus (BP) has recently attracted significant interest in gas sensing because of its outstanding electronic and optical properties. In this paper, we demonstrated a series of gas sensors for detecting NH3 at room temperature that were based on BP nanosheets that were exfoliated for various durations. The BP nanosheet gas sensors showed excellent sensitivity for the detection of NH3 down to 100 ppb (~32%) under ambient conditions compared to previous reports. The BP nanosheets that were exfoliated for 60 min showed the highest response to 100 ppm NH3, namely, 121%, which was 2.5 times greater than the response of ground BP. The corresponding sensor also exhibited a stable response in the humidity range of 22% RH to 35% RH, which is the typical humidity range for non-rainy days. Moreover, the prepared NH3 gas sensor showed high selectivity, fast response and recovery, and excellent repeatability. According to various experimental and theoretical studies, the response and binding energy of BP towards NOx were higher than those towards NH3. However, very interestingly, the response of the exfoliated BP nanosheets to NH3 was higher than that to NOx in our work. The selectivity transformation from NOx to NH3 was mainly caused by the different layer spacing of the ground BP and the change in spacing between the BP nanosheet layers with different exfoliation times, increased oxygen incorporation, phosphate ions and defects that is induced by the liquid-phase exfoliation process, which led to the variations in its band gap and surface states. © 2022, The Authors. All rights reserved.

关键词： Nanosheets

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Uv-Light Activated Blue-Emitting Persistent Luminescence of Caygao4:Bi3+ Suitable for High-Temperature Environment

SSRN

引用

SSRN 2022年

作者： Guo, Haijie Chen, Yaqi Gu, Shuangqing Wang, Lei Shi, Qiufeng Zhao, Lei Cui, Caie Cui, Yanxia Huang, Ping College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan030024 China School of physics and Opto-Electronic Technology Baoji University of Arts and Sciences Shanxi Baoji721016 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education and Shanxi Province College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan030024 China

The persistent luminescence (PersL) materials suitable for high-temperature environments have attracted extensive attention in recent years. Herein, we have reported a novel long-persistent luminescent material of CaYGaO 4 :Bi 3+ , with a peak wavelength of 430 nm and a duration of more than 40 minutes at room temperature at the 0.32 mcd/m 2 threshold value after UV irradiation. A series of thermoluminescence measurements reveal that the CaYGaO 4 :Bi 3+ phosphor has abundant shallow and deep traps with a wide range of distribution. In addition, we utilize the ion substitution strategy of Sr 2+ partially replacing Ca 2+ ions to increase the shallow trap concentration, so as to improve the performance of PersL at room temperature. More importantly, we investigate the PersL performance of CaYGaO 4 :Bi 3+ phosphor at high-temperature environment. As the result demonstrates, when the ambient temperature is in the high-temperature range (450 K - 600 K), the phosphor has more obvious brightness. Finally, we take advantage of the phosphor to carry out a demonstration experiment and obtain a set of temperature-related color conversion images, which unequivocally signifies that the phosphor has broad application prospects in anti-counterfeit fields and emergency indicator marks in high-temperature and harsh environments. © 2022, The Authors. All rights reserved.

关键词： Irradiation

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controllable Electrical Characteristic of Ti3c2t2/Mos2 (T=Oh, F, O) Interfaces for High Performance Electronics: Insights from First-Principles

SSRN

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SSRN 2023年

作者： Zhang, Qiang Liu, Yan Zhang, Riguang Lv, Bohan Hao, Runfang Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Shanxi Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System of The Ministry of Education Taiyuan University of Technology Shanxi Taiyuan030024 China School of Software Taiyuan University of Technology Shanxi Taiyuan030024 China State Key Laboratory of Clean and Efficient Coal Utilization China Laboratory of Aerospace Servo Actuation and Transmission Beijing Institute of Precision Mechatronics and Controls Beijing100000 China

Two-dimensional (2D) semiconductors have shown competitive potential for applications into beyond-silicon electronics. However, the controllable electrical characteristic of metal-semiconductor interfaces is still a challenge for high performance electronics due to Fermi level pinning. To explore Ti3C2T2/MoS2 (T= OH, F, O) for high performance electronics, the vertical electric field and interlayer distance are adopted here to regulate the electrical characteristic of interfaces based on the first-principles calculations. Though this, the electrical characteristic of Ti3C2O2/MoS2 and Ti3C2F2/MoS2 are more sensitive to electric field or interlayer distance than that of Ti3C2(OH)2/MoS2. Especially, the negative electric field with larger than -0.2 V/Å makes Ti3C2O2/MoS2 interface change from p-type Schottky to n-type Schottky contact. Furthermore, the Ti3C2O2/MoS2 interface can not only switch from p-type Schottky to n-type Schottky contact, but also from p-type Schottky to n-type Ohmic contact by varying interlayer distance. Moreover, the tunneling barriers of all interfaces are more sensitive to interlayer distance than to electric field. This work provides vital insights for high-performance electronics of Ti3C2T2/MoS2 (T=OH, F, O) in experiments. © 2023, The Authors. All rights reserved.

关键词： Electric fields

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