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Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere

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Solar Energy Materials and Solar Cells 2023年第1期257卷

作者： Zhang, Xiao-Ying Han, Jing Wang, Yao-Tian Ruan, Yu-Jiao Wu, Wan-Yu Wuu, Dong-Sing Zuo, Juan Lai, Feng-Min Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361024 China Department of Materials Science and Engineering National United University Miaoli36063 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan School of Materials Science and Engineering Xiamen University of Technology Xiamen361024 China Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

Hafnium oxide (HfO2) thin film has received tremendous research interests as a passivation layer of crystalline silicon (c-Si) due to its thermal stability and positive fixed charges. HfO2 films were prepared both on P-type and N-type polished c-Si via a remote plasma atomic layer deposition process. Post annealing was carried out in oxygen, atmosphere (Air) and nitrogen (N2) at temperature of 500 °C. Electrical characterization was done through a regular metal-insulator-semiconductor structure and capacitance-voltage measurements. The oxide fixed charge (Qf) and density of interface traps (Dit) between HfO2 and c-Si were extracted. Qf and Dit reveal the potential of HfO2 for field effect and chemical passivation, respectively. Effective lifetime measurements by microwave photoconductivity decay in Si wafers passivated with HfO2 were applied to characterize surface recombination velocity to directly evaluate the overall passivation quality. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO2 thin films are systematically studied. The results show that N2-annealed sample possesses the highest Qf of 1.73 × 1012 cm−2 and therefore provides the best field effect passivation. Air-annealed sample has lowest Dit of 1.0 × 1012 eV−1cm−2 and therefore provides the best chemical passivation. Air-annealed sample possesses the highest effective lifetime of 290 μs at injection level of 1 × 1015 cm−3, which means that good passivation was obtained for N-type Si wafer passivated with HfO2 after annealing in Air. © 2023 Elsevier B.V.

关键词： Annealing

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A Low Delay AES Round Transform Architecture Using Constant Matrix Multiplications Merging Technologies

A Low Delay AES Round Transform Architecture Using Constant ...

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IEEE Conference on Industrial Electronics and applications (ICIEA)

作者： Xinxing Zheng Xiaoqiang Zhang Fan Yang Mingyu Xu Han Yan College of Information Engineering Wuhu Institute of Technology Wuhu China Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment Ministry of Education Wuhu China Engineering Research Center of Vehicle-Mounted Display Integration System Wuhu China College of Electrical Engineering Anhui Polytechnic University Wuhu China

ISBN: (纸本)9781665409858

This paper presents a low delay architecture design method for the hardware implementation of the advanced Encryption Standard (AES) algorithm. The proposed architecture is designed by using constant matrix multiplications (CMM) merging technologies. To reduce the area cost in hardware implementations, S-box/InvS-box is usually implemented with composite field arithmetic (CFA) technologies. In this paper, CMM in CFA-based S-box/InvS-box are further merged with constant coefficient multiplications in MixColumns/ InvMixColumns, which can also be expressed as CMM forms. By the merging, the delay of the hardware implementation of encryption round transform is reduced at the cost of slight area cost increasing, and both delay and area cost are reduced in hardware implementations of decryption round transform. Hardware complexities analysis indicates that our designs have less delay compared with previous works.

关键词： Industrial electronics Costs Design methodology Merging Transforms Hardware Delays

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THE REMOTE SENSING IMAGE GEOMETRICAL MODEL of BP NEURAL NETWORK

THE REMOTE SENSING IMAGE GEOMETRICAL MODEL of BP NEURAL NETW...

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2020 International Conference on Geomatics in the Big Data Era, ICGBD 2020

作者： Yue, C.Y. Sun, T. Xie, J.F. Beijing Institute of Space Mechanics and Electricity Beijing China Beijing Key Laboratory of Advanced Optical Remote Sensing Technology Beijing China Key Laboratory of Technology in Geo-spatial Information Processing and Application System Aerospace Information Research Institute Chinese Academy of Sciences Beijing China Land Satellite Remote Sensing Application Center Ministry of Natural Resources of P. R. China Beijing China

Imagery geometry models (IGMs) of the high-resolution satellite images (HRSIs) are always of great interest in the photogrammetry and remote sensing community for the raising new kinds of sensors and imaging systems. Especially the generalized sensor models (GSMs) have been widely used for positioning of satellite images, and the accuracy are already validated. Since Back propagation (BP) neural network is a better choice for the two key reasons of the replacement of physical sensor models by generalized sensor models, numerous mathematical estimations for every specialized sensor, and secret equations of the IGMs. Experiments are carried out to test the approximation accuracy of the new generalized sensor model. And the experimental results show that, the BP neural network is of extremely high accuracy for satellite imagery photogrammetric restitution. © 2020 C. Y. Yue et al.

关键词： Backpropagation

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Impact of Thickness in Ultra-Thin Ald-Processed HfO2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

SSRN

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SSRN 2024年

作者： Chen, Minyu Chen, Huimin Solano, Eduardo Merino, Danile Hermida Hua, Wenqiang Ding, Xingwei Wei, Bin Liao, Yingjie Wu, Bing Microelectronic R&D Center School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China Laboratory CNRS ERL 7004 University of Technology of Troyes 12 rue Marie Curie Troyes10004 Cedex France NCD-SWEET beamline ALBA Synchrotron Cerdanyola del Vallès Barcelona08290 Spain Shanghai Advanced Research Institute Chinese Academy of Sciences 201210 China 71 Avenue Des Martyrs CS 40220 Grenoble38043 France Magnetic Resonance Research Center Institute for Molecules and Materials Radboud University Nijmegen Netherlands

The effective reduction in the thickness of the metal gate while retaining its defect-free morphology and high dielectric properties is of great interest for producing low-power-consumption and high-performance thin film transistors (TFTs). In this study, a series of ultrathin hafnium dioxide (HfO2) coating layer with different thickness were prepared by atomic layer deposition (ALD) as TFT dielectrics. In XPS analyses, it was observed that the ratio of HfOx to HfO2 decreases with the increasing thickness of the HfO2 layer. Concurrently, the ratio of O species outside HfO2 also decreases as the thickness of the HfO2 layer increases. These HfO2 films were further examined by grazing incidence small and wide-angle x-ray scattering (GISAXS/GIWAXS), atomic force microscope (AFM) and X-ray to understand the impact of these films’ thickness on their morphological and topological properties. Afterwards, the dielectric properties of all these films were analyzed by the impedance measurement, it was found that the optimized 10 nm HfO2 thin film can exhibit a low-leakage current density of 13 nA cm−2 at 1 V and a permittivity of 5.98. Finally, the as-fabricated ZnO TFT with a 10 nm HfO2 gate dielectric layer was found to be able to operate at an ultra-low voltage of -1.59 V with a very high current on/off ratio, which is larger than 106. This result demonstrates the critical importance in controlling the thickness of dielectric layer to achieving high-performance TFTs and its profound potential in the applications of low-power consumption microelectronics. © 2024, The Authors. All rights reserved.

关键词： Thin films

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Low-temperature spatial atomic layer deposited Ga2O3 films for high-performance flexible deep ultraviolet photodetector

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Materials Letters 2023年 340卷

作者： Hsu, Chia-Hsun Zhu, Run-Feng Kang, Pin-Chun Gao, Peng Wu, Wan-Yu Wuu, Dong-Sing Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-electronic and Communication Engineering Xiamen University of Technology Xiamen361026 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361004 China Fujian Provincial Key Laboratory of Nanomaterials Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fujian Fuzhou350002 China Department of Materials Science and Engineering National United University Miaoli36063 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Department of Materials Science and Engineering Da-Yeh University Changhua51591 Taiwan

This research aims to prepare amorphous gallium oxide (α-Ga2O3) films for use in flexible deep ultraviolet photodetectors. The films are deposited using high-speed spatial atomic layer deposition (SALD) at different substrate temperatures. The experimental results show that the saturating deposition rate at 145–155 °C is four to sixteen times higher than that of temporal ALD. Moreover, under the saturated SALD conditions the deposited film has less carbon impurities, oxygen-related defects, and greater compactness than under non-saturated conditions. Finally, a high-performance flexible deep ultraviolet α-Ga2O3 photodetector with fast decay time of 161 µs and low dark current density of 6.8 × 10-10 A/cm2 is achieved. © 2023 Elsevier B.V.

关键词： Gallium compounds

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A Z-scheme heterojunction of ZnO/CDots/C_(3)N^(4) for strengthened photoresponsive bacteria-killing and acceleration of wound healing

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Journal of Materials Science & technology 2020年第22期54卷 1-11页

作者： Yiming Xiang Qilin Zhou Zhaoyang Li Zhenduo Cui Xiangmei Liu Yanqin Liang Shengli Zhu Yufeng Zheng Kelvin Wai Kwok Yeung Shuilin Wu Hubei Key Laboratory of Polymer Materials Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional MaterialsSchool of Materials Science&EngineeringHubei UniversityWuhan 430062China The Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of China School of Materials Science&EngineeringTianjin UniversityTianjin 300072China Department of Orthopaedics&Traumatology Li KaShing Faculty of MedicineThe University of Hong KongPokfulamHong Kong999077China State Key Laboratory for Turbulence and Complex System and Department of Materials Science and Engineering College of EngineeringPeking UniversityBeijing 100871China

The abuse of antibiotics is leading to the emergence of resistant *** this work,a drug-free composite of ZnO/CDots/g-C3N4 with Z-scheme heterojunction was developed,which was employed to kill bacteria effectively within a very short time under the irradiation of visible light due to the enhanced photocatalytic and photothermal *** this system,the CDots acted as a bridge between g-C3N4 and ZnO,effectively inhibiting the recombination of photo-generated electrons with holes and consequently enhancing the photocatalytic *** addition,CDots endowed the system with excellent photothermal *** a result,the antibacterial efficacy of ZnO/CDots/g-C3N4 composite against *** and *** reached up to 99.97%and 99.99%respectively,after 15 min of visible light irradiation,due to the synergistic action of photo-inspired radical oxygen species and *** Zn ions released from the composite promoted the growth of fibroblasts,which accelerated the wound healing process.

关键词： Heterostructure Z-scheme Antibacterial Wound healing g-C3N4

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Enhanced Intra/Intermolecular Charge Transfer for Efficient Multilevel Resistive Memory

SSRN

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SSRN 2022年

作者： Dong, Qingchen Cheng, Xiaozhe Lian, Hong Yao, Lingling Xia, Weizhen Han, Jinba Wong, Wai-Yeung MOE Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology 79 Yingze West Street Taiyuan030024 China MOE Key Laboratory of Advanced Display and System Applications Shanghai University 149 Yanchang Road Jingan District Shanghai200072 China School of Mechanical & Electronic Engineering and Automation Shanghai University 99 Shangda Road Baoshan District Shanghai200444 China Hung Hom Hong Kong The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen518057 China

Adjustment of molecular structure can effectively improve the organic memory device behaviors due to the optimization of intra/intermolecular interaction and molecular packing motif. However, the intrinsic mechanism of how intermolecular interaction and molecular packing motif affect the device performance needs to be further explored. Herein, we synthesized four new small molecules (X-TEBT) by introducing the alkynyl π bridges and different substituents (X = H, CN, tBu, OMe) into the backbone of conjugated donor–acceptor molecules, namely, TEBT , CN-TEBT, tBu-TEBT and OMe-TEBT, for solution-processed organic resistive memory. All memory devices displayed nonvolatile write-once-read-many-times (WORM) behaviors with low threshold voltage ( V th ), high production yield, and good thermal stability. The champion device ( tBu-TEBT ) exhibits ternary WORM property with the highest ON2/ON1/OFF ratio and the lowest V th1 (1.6 V) and V th2 (2.4 V). More importantly, the single crystal structure of t Bu-TEBT was successfully obtained which helps us analyze the origin of the physical mechanism of resistive switching behavior and establish a common structure-property relationship for high performance organic memory. Its excellent properties enable us to perform logic gates and information display functions which offer possibilities as smart sensor in Internet of Things (IoT) application. © 2022, The Authors. All rights reserved.

关键词： Logic gates

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IntML-KNN: A Few-Shot Radio Frequency Fingerprint Identification Scheme for Lora Devices

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IEEE Signal Processing Letters 2025年

作者： Cao, Xin Tan, Weijie Gao, Qiangqiang Hu, Zhilong Li, Chunguo Guizhou University College of Computer Science and Technology Guiyang550025 China Guizhou University State Key Laboratory of Public Big Data College of Computer Science and Technology Guiyang550025 China Advanced Cryptography and System Security Key Laboratory of Sichuan Province Chengdu610025 China Ministry of Industry and Information Technology Laboratory of Cryptograph Application Technology Innovation and Testing Verification Beijing100015 China Southeast University School of Information Science and Engineering Nanjing210096 China

Deep learning (DL) is widely used in radio frequency fingerprint identification (RFFI). However, in few-shot case, traditional DL-based RFFI need to construct auxiliary dataset to realize radio frequency fingerprint identification. To address this issue, we propose a few-shot RFFI (FS-RFFI) method based on interpolating metric learning and KNN (IntML-KNN). Specifically, the method first extends the dataset with data augmentation, and CutMix interpolation. Secondly, combining with metric learning to enhance the generalization capacity of the model. Finally, KNN algorithm is designed to realize device classification and detection. The proposed IntML-KNN method is verified on the commercial available LoRa dataset. The experimental results indicate that the proposed scheme exhibits strong classification and generalization performance in FS-RFFI. Meanwhile, the recognition rate of the proposed IntML-KNN reaches 97.00% with only 10% samples. © 1994-2012 IEEE.

关键词： Deep learning

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Towards the integration of nanoemitters by direct laser writing on optical glass waveguides

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Photonics Research 2020年第9期8卷 1541-1550页

作者： XIAOLUN XU AURÉLIE BROUSSIER TIZIANA RITACCO MACKRINE NAHRA FABIEN GEOFFRAY ALI ISSA SAFI JRADI RENAUD BACHELOT CHRISTOPHE COUTEAU AND SYLVAIN BLAIZE Light nanomaterialsnanotechnologies(L2n)ERL 7004CNRS.University of Technology of Troyes12 rue Marie Curie10004 Troyes CedexFrance Teem Photonics 61 Chemin du Vieux Chêne38246 MeylanFrance Key Laboratory of Advanced Display and System Application Ministry of EducationSchool of Mechatronic Engineering and AutomationShanghai UniversityShanghai 200072China Sino-European School of Technology Shanghai UniversityShanghai 200044China

A major challenge towards nanophotonics is the integration of nanoemitters on optical *** the optical properties of nanoemitters with the benefits of integration and scalability of integrated optics is still a major issue to *** this work,we demonstrate the integration of nanoemitters positioned in a controlled manner onto a substrate and onto an optical ion-exchanged glass waveguide via direct laser writing based on twophoton *** nanoemitters are colloidal CdSe/ZnS quantum dots(QDs)embedded in polymeric *** varying the laser parameters during the patterning process,we make size-controlled QDpolymer nanostructures that were systematically characterized using optical and structural *** as small as 17 nm in height were *** well-controlled QD-polymer nanostructure systems were then successfully integrated onto a new photonic platform for nanophotonics made of an ion-exchanged *** show that our QDs maintain their light emitting quality after integration as verified by photoluminescence(PL)***,QD emission coupled to our waveguides is detected through a home-built fiber-edge coupling PL measurement *** results show the potential for future integration of nanoemitters onto complex photonic chips.

关键词： emitter optical waveguides

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Enhanced High-Temperature Energy Storage Properties of BOPP Capacitor Films by Coating Heterostructural Ceramics Layers

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IET Nanodielectrics 2025年第1期8卷

作者： Xing, Zhaoliang Gong, Bize Yin, Tianyuan Guo, Shaowei Yang, Bo Zhang, Tiandong Hao, Jianhong State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing China State Key Laboratory of Advanced Power Transmission Technology China Electric Power Research Institute Beijing China Key Laboratory of Engineering Dielectrics and Its Application Ministry of Education Harbin University of Science and Technology Harbin China School of Electrical and Electronic Engineering Harbin University of Science and Technology Harbin China

Biaxially oriented polypropylene (BOPP), the dielectric material of choice for polymer film capacitors, is widely used in advanced electronic devices and power grids, among other applications. However, the nonlinear growth of the conduction loss at high temperatures leads to a rapid deterioration of its energy storage performance, which seriously hinders the development trend of miniaturisation and high integration of power systems. In this study, inorganic nanolayers with heterogeneous structure were grown on the surface of BOPP films by magnetron sputtering using high dielectric constant BaZrTiO3 and wide bandgap Al2O3 ceramic targets. Experimental and theoretical analyses show that the use of wide bandgap Al2O3 as the heterojunction outer layer can effectively impede carrier injection and transport, leading to a significant reduction in the leakage current density of the composite film, effectively enhancing the high temperature energy storage performance of the composite films. The synergistic enhancement of the inorganic heterojunction structure on the dielectric properties and insulating strength of the polymer film is attributed to the ability of the Al2O3/BaZrTiO3/BOPP/BaZrTiO3/Al2O3 (O-B-P-B-O) composite films to exhibit a discharge energy density of 2.49 J/cm3 and a charge/discharge efficiency of 77.6% at 125°C and 500 MV/m. © 2025 The Author(s). IET Nanodielectrics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and technology.

关键词： Nanocomposite films

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