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International Conference on Acoustics, Speech, and Signal Processing (ICASSP)

作者： Chao Liu Ruipeng Ma Zheng Si Mingmin Chi School of Computer Science Shanghai Key Laboratory of Data Science Fudan University Zhengzhou Zhongke Institute of Integrated Circuit and System Application School of Cyber Science and Engineering Zhengzhou University Henan Institute of Advanced Technology Zhengzhou University

The problem of signal detection and classification of multiple UAVs can be solved using object detection techniques in computer vision. However, this requires collecting and labeling a large amount of reliable raw data. Since the UAV signal dataset cannot be directly applied to object detection, we propose a method using time-frequency domain filtering and automatic labeling to construct a large-scale time-frequency spectrogram dataset. Experimental results show that the average recognition accuracies of image transmission signals and remote control signals under interference conditions are 97% and 82%, respectively, while the average errors of signal parameters are 0.93% and 5.57%.

关键词： Training Time-frequency analysis Object detection Manuals Labeling Reliability Speech processing

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers 4th

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical...

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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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Spectrum-dependent photonic synapses based on 2D imine polymers for power-efficient neuromorphic computing

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InfoMat 2021年第8期3卷 904-916页

作者： Junyao Zhang Qianqian Shi Ruizhi Wang Xuan Zhang Li Li Jianhua Zhang Li Tian Lize Xiong Jia Huang Interdisciplinary Materials Research Center School of Materials Science and EngineeringShanghai Institute of Intelligent Science and TechnologyTongji UniversityShanghaiPeople's Republic of China Translational Research Institute of Brain and Brain-Like Intelligence Shanghai Fourth People's Hospital Affiliated to Tongji UniversityShanghaiPeople's Republic of China Key Laboratory of Advanced Display and System Application Ministry of EducationShanghai UniversityShanghaiPeople's Republic of China

2D polymers(2DPs)have attracted increasing interests in sensors,catalysis,and gas storage ***,2DPs with unique band structure and tunable photophysical properties also have immense potential for application in photonic neuromorphic ***,photonic synaptic transistors based on 2DPs as the light-tunable charge-trapping medium are developed for the first *** resulted organic transistors can successfully emulate common synaptic functions,including excitatory postsynaptic current,pair-pulse facilitation,the transition of short-term memory to long-term memory,and dynamic *** from the high photosensitivity of the 2DP,the devices can be operated under a low operating voltage of0.1 V,and achieve an ultralow energy consumption of~0.29 pJ per *** addition,the heterostructure formed between the 2DP and organic semiconductor enables spectrum-dependent synaptic responses,which facilitates the simulation of visual learning and memory processes in distinct emotional *** underlying mechanism of spectrum-dependent synaptic-like behaviors is systematically validated with in situ atomic force microscopy based electrical *** spectrum-enabled tunability of synaptic behaviors further promotes the realization of optical logic functions and associative *** work inspires the new application of 2DPs in photonic synapses for future neuromorphic computing.

关键词： 2D polymers neuromorphic computing photonic synapses synaptic functions

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A Low Delay AES Round Transform Architecture Using Constant Matrix Multiplications Merging Technologies 17

A Low Delay AES Round Transform Architecture Using Constant ...

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17th IEEE Conference on Industrial Electronics and applications, ICIEA 2022

作者： Zheng, Xinxing Zhang, Xiaoqiang Yang, Fan Xu, Mingyu Yan, Han Wuhu Institute of Technology College of Information Engineering Wuhu China Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment Ministry of Education Wuhu China Engineering Research Center of Vehicle-Mounted Display Integration System Wuhu China Anhui Polytechnic University College of Electrical Engineering Wuhu China

ISBN: (纸本)9781665409841

This paper presents a low delay architecture design method for the hardware implementation of the advanced Encryption Standard (AES) algorithm. The proposed architecture is designed by using constant matrix multiplications (CMM) merging technologies. To reduce the area cost in hardware implementations, S-box/InvS-box is usually implemented with composite field arithmetic (CFA) technologies. In this paper, CMM in CFA-based S-box/InvS-box are further merged with constant coefficient multiplications in MixColumns/ InvMixColumns, which can also be expressed as CMM forms. By the merging, the delay of the hardware implementation of encryption round transform is reduced at the cost of slight area cost increasing, and both delay and area cost are reduced in hardware implementations of decryption round transform. Hardware complexities analysis indicates that our designs have less delay compared with previous works. © 2022 IEEE.

关键词： Cryptography

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Thick films of polymer Direct-conversion X-ray detectors

Thick films of polymer Direct-conversion X-ray detectors

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Electronics Packaging technology Conference (EPTC)

作者： Hu Chen Yi Li Zhao Hao Xingyang Wu Jianhua Zhang The Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai China Shanghai University Shanghai China

ISBN: (纸本)9781665416207

Organic conjugated polymers have been widely used in the field of X-ray detectors because of their simple processing, mechanical flexibility and low cost. In this paper, we report a vertical structure X-ray detector using PDMS material which is fabricated by simple process steps. The response of pure PDMS material to X-ray is verified, and the effects of different process conditions on the device performance were tested. The detector with film forming speed 2000 rpm and curing temperature 60°C still has high sensitivity $\left (434.5 \mu \mathrm{CGy}_{\text {air }}^{-1} \mathrm{~cm}^{-2}\right)$ to low dose rate $\left(23.9 \mu \mathrm{Gy}_{\text {air }}\text{S}^{-1}\right)$ when the applied bias voltage is 150 V. Finally, the device provides an idea for the development of low cost and high performance flexible direct X-ray detectors.

关键词： Performance evaluation Temperature sensors Micrometers X-ray detectors Sensitivity Costs Voltage

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Principles, fabrication, and applications of halide perovskites-based memristors

FlexMat

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FlexMat 2024年第2期1卷 127-149页

作者： Xiaozhe Cheng Zhitao Dou Hong Lian Zhitao Qin Hongen Guo Xifeng Li Wai-Yeung Wong Qingchen Dong MOE Key Laboratory of Advanced Display and System Applications Shanghai University Shanghai China School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai China Department of Applied Biology and Chemical Technology The Hong Kong Polytechnic University (PolyU) Hong Kong China School of Microelectronics Shanghai University Shanghai China Qingchen Dong and Wai-Yeung Wong.

In recent decades, the microelectronics industry has developed rapidly based on the von Neumann architecture and under the guidance of Moore's law. However, as the size of electronic devices approaches the limit and power consumption increases, traditional microelectronic materials and devices are facing more and more challenges. As a new type of semiconductor material, halide perovskites (HPs) have excellent photoelectric characteristics, such as high carrier mobility, controllable band structure, etc., which have been widely used in solar cells, light emitting diodes (LEDs), photodetectors, memristors, and in other fields. Among them, the memristor, as a new type of electronic device, is very promising for in-memory computing with low power consumption by breaking the limit of von Neumann architecture. Especially, HPs-based memristors show outstanding photoelectric response performance, low power consumption, and flexible wearability, allowing them to hold great application potential in logical operation, polymorphic storage, and neuromorphic computing, etc. In this review, we first briefly introduce the basic characteristics and preparation methods of HPs. Secondly, the development history, device structure, and performance parameters of memristors are depicted in detail. Thirdly, the resistance mechanism and application of HPs-based memristors are discussed. Finally, the research status and development prospects of HPs-based memristors are outlined.

关键词： artificial synapse crystal structure halide perovskites memristor

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On the accurate characterization of quantum-dot light-emitting diodes for display applications

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npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

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Investigation of post-thermal annealing-induced enhancement in photovoltaic performance for squaraine-based organic solar cells

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Frontiers of Materials Science 2020年第1期14卷 81-88页

作者： Rui Zhu Feiyang Liu Zixing Wang Bin Wei Guo Chen Key Laboratory of Advanced Display and System Applications(Ministry of Education) Shanghai UniversityYanchang Road 149Shanghai200072China School of Environmental and Chemical Engineering Jiangsu University of Science and TechnologyZhenjiang212003China

In this work,we have systematically investigated the post-thermal annealing-induced enhancement in photovoltaic performance of a 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]squaraine(DIBSQ)/C60 planar heterojunction(PHJ)organic solar cells(OSCs).An increased power conversion efficiency(PCE)of 3.28%has been realized from a DIBSQ/C60 device with thermal annealing at 100°C for 4 min,which is about 33%enhancement compared with that of the as-cast *** improvement of the device performance may be mainly ascribed to the crystallinity of the DIBSQ film with post-thermal annealing,which will change the DIBSQ donor and C60 acceptor interface from^PHJ to hybrid planar-mixed *** new donor-acceptor heterojunction structure will significantly improve the charge separation and charge collection efficiency,as well as the open circuit voltage(Voc)of the device,leading to an enhanced *** work provides an effective strategy to improve the photovoltaic performance of SQ-based OSCs.

关键词： organic solar cell squaraine dye post-thermal annealing donor/acceptor interface power conversion efficiency

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High-Performance Stable Hybrid Inorganic-Organic Light-Emitting

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SmartMat 2025年第1期6卷 195-202页

作者： Huixue HuangI Zhagen Miao?|Haikuo Gao I Jin Cao|Yanqiong ZhengI Can Gao?|Xifeng Li|Guangcai Yuan+Huani Dong D Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghaiChina I 2Bejing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBejingChina I 3shandong Engineering Research Center of Aeronautical Materials and DevicesCollege of Aeronautical EngineeringShandong University of AeronauticsBinzhouChina I 4BOE Technology Group Co.Ltd.BeijingChina

Light-emitting transistors(LETs)as novel integrated optoelectronic devices demonstrate great potential applications in smart displays and visual intelligent *** construction of high-performance area-emission LETs with low power con-sumption and good reliability is urgently needed for advancing their applications,however,this integration has not been realized within a single ***,we demonstrate a kind of planar-driven hybrid LET(PDHLET)that makes use of the unique advantages of high mobility and stability of inorganic and organic semiconductors in the same *** incorporating an indium-zinc-gallium-oxide(InZnGeO)conducting layer and organic emissive layer,a high-performance stable blue-emissive PDHLET is constructed,giving a high Ion/lofr ratio approaching 6.1×10°and a low Von of 5.5 V along with maximum brightness of 1264 cd/m?as well as small Vrh shift of 0.5V after 1000s positive stress ***,a systematic simulation,including charge concentration and Langevin recombination rate,is carried out on PDHLET for the first time,demonstrating good consistency with experimental *** confirms the uniformity of high redistributed charge concentration in the InZnGeO conducting layer which thus enables good area *** study provides a new avenue for constructing high-performance stable LETs toadvancevarious field applications.

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Thermodynamic Analysis of Multi-Stage Thermal Compression Bonding for Fabricating Vertically Stacked Micro-Led Array

Thermodynamic Analysis of Multi-Stage Thermal Compression Bo...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lianyu Wang Kailin Ren Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Vertical full-color Micro-LEDs based on flip-chip bonding technology are of great significance in high-resolution display applications, as they have many advantages such as high pixel density, high brightness, and wide color gamut. However, the construction of vertical full-color Micro-LEDs requires multiple thermal compression bonding (TCB). Therefore, thermal stress analysis during multiple TCB is necessary. In this work, the surface thermal stress of a 5×5 vertical Micro-LED array during multi-stage TCB is studied by finite element method (FEM) simulations. The stresses at LED-LED bonding interface and stacked LED-backplane bonding interface as well as the interactions between the two bondings are investigated. The results of different bonding temperatures, material combinations, and interconnected metal diameters and depths on the mean stresses at the bonding interface are analyzed, and then the adequacy of bonding and risk of debonding are assessed. The results show that among the hybrid bonding material combinations set in the simulation, the Cu/ Al 2 O 3 has the largest interfacial stress. In addition, decreasing the interconnected metal diameter and lowering the bonding temperature can relieve the interfacial stress, while the interconnected metal depth has no significant effect on the bonding stress. The key advantage of this work is that it can help establish design and process guidelines to shorten the development cycle of vertical full-color Micro-LEDs based on flip-chip bonding technology.

关键词： Thermodynamics Photonic band gap Metals Thermal analysis Finite element analysis Flip-chip devices Bonding Stress Thermal stresses Guidelines

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