We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe2 moiré superlattice, including topologically trivial and nontrivial ferro-, antiferro-, a...
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In recent years, there has been an increasing interest in using deep learning and neural networks to tackle scientific problems, particularly in solving partial differential equations (PDEs). However, many neural netw...
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Inspired by the success of Large Language Models (LLMs), the development of Large Atom Models (LAMs) has gained significant momentum in scientific computation. Since 2022, the Deep Potential team has been actively pre...
The electromagnetic pulse (EMP) coupling effect is an important research area in electromagnetic compatibility and electromagnetic interference. Numerical simulation plays an important role in the study of the pulse c...
The electromagnetic pulse (EMP) coupling effect is an important research area in electromagnetic compatibility and electromagnetic interference. Numerical simulation plays an important role in the study of the pulse coupling effect. To achieve an efficient and effective simulation, a parallel solver based on time-domain finite element method (TD-FEM) is proposed, which is developed based on JAUMIN framework. This parallel TD-FEM solver is employed to simulate the effects of an EMP coupling to a printed circuit board at work.
In this paper, we present a high-order adaptive multi-resolution method on curvilinear grids for solving the hyperbolic conservation laws. The method has three primary components. Firstly, the governing equations and ...
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CMOS devices are widely used in modern integrated circuits. However, like any semiconductor device, CMOS devices are susceptible to total ionizing dose (TID) effects when exposed to ionizing radiation environments. In...
CMOS devices are widely used in modern integrated circuits. However, like any semiconductor device, CMOS devices are susceptible to total ionizing dose (TID) effects when exposed to ionizing radiation environments. In this work, a TCAD model of a 180 nm bulk COMS is developed to investigate the impact of TID effects. Simulated results show that the TID effects can cause a negative shift in the voltage characteristics curve and an increase in leakage current of CMOS devices.
Quantum dynamics of many-body systems is a fascinating and significant subject for both theory and *** question of how an isolated many-body system evolves to its steady state after a sudden perturbation or quench sti...
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Quantum dynamics of many-body systems is a fascinating and significant subject for both theory and *** question of how an isolated many-body system evolves to its steady state after a sudden perturbation or quench still remains *** this paper,using the Bethe ansatz wave function,we study the quantum dynamics of an inhomogeneous Gaudin *** derive explicit analytical expressions for various local dynamic quantities with an arbitrary number of flipped bath spins,such as:the spin distribution function,the spin-spin correlation function,and the Loschmidt *** also numerically study the relaxation behavior of these dynamic properties,gaining considerable insight into coherence and entanglement between the central spin and the *** particular,we find that the spin-spin correlations relax to their steady value via a nearly logarithmic scaling,whereas the Loschmidt echo shows an exponential relaxation to its steady *** results advance the understanding of relaxation dynamics and quantum correlations of long-range interacting models of the Gaudin type.
In the present paper an algorithm for the numerical solution of the external Dirichlet generalized harmonic problem for a sphere by the method of probabilistic solution (MPS) is given. Under a generalized problem is m...
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Electronic systems in space or nuclear devices are exposed to both ionizing radiation and electromagnetic radiation environments. Experimental results have indicated that the semiconductor devices may suffer severe da...
Electronic systems in space or nuclear devices are exposed to both ionizing radiation and electromagnetic radiation environments. Experimental results have indicated that the semiconductor devices may suffer severe damage in the combined environment of ionizing radiation and electromagnetic radiation. In this work, a total ionizing dose (TID) effects and electromagnetic pulses (EMP) combined effect model of NMOS device is established. Simulation results show that the NMOS will exhibit more severe leakage current increase and sub-threshold characteristics degradation in the combined environments.
An asymptotic-preserving (AP) implicit-explicit PN numerical scheme is proposed for the gray model of the radiative transfer equation, where the first- and second-order numerical schemes are discussed for both the lin...
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