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Extraction-efficiency enhancement of InGaN-based vertical LEds on hemispherically patterned sapphire

physica status solidi c 2007年第7期4卷

作者： Jae-Hoon Lee Jeong-Tak Oh Seok-Boem Choi Jong-Gun Woo Su-Yeol Lee Myoung-Bok Lee Lighting Module R&D Group OS Division Samsung Electro-Mechanics Co. Ltd. Suwon 442-743 Korea Nano Practical Application Center Daegu New Technology Agency Daegu 704-230 Korea

To improve the external quantum efficiency, a vertical type InGaN LEd (VT-LEd) is fabricated on a sapphire substrate with a surface hemispherically-patterned by laser lift-off (LLO) technique. As a result, the VT-LEds with a concavely patterned surface revealed an enhanced luminous intensity by four times compared to the device with a planar surface. This improvement in the VT-LEd performances is explained to be attributed mainly to the increase in the escaping probability of photons due to the corrugated LEd surface. The use of metallic substrate prepared by nickel electroplating seems the other factor for the increase of luminous intensity by considering reduced current crowding and better thermal conductivity. These devices are advantageous for high power operation. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

关键词： 68.37.Ps 78.60.Fi 81.15.Gh 85.60.Jb

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Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

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Physica Status Solidi (C) Current Topics in Solid State Physics 2006年第6期3卷 2169-2173页

作者： Lee, Jae-Hoon Oh, Jeong-Tak Park, Jin-Sub Kim, Je-Won Kim, Yong-Chun Lee, Jeong-Wook Cho, Hyung-Koun Lighting Module R and D Group OS Division Samsung Electro-Mechanics Co. Ltd Suwon 442-743 Korea Republic of Photonics Laboratory Samsung Advanced Institute of Technology Suwon 440-600 Korea Republic of Sung Kyun Kwan University Materials Science and Engineering Suwon 440-746 Korea Republic of

To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LEd) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LEd grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Efficiency

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