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29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015

作者： Kulkarni, S.H. Chen, Z. Srinivasan, B. Pedersen, B. Bhattacharya, U. Zhang, K. Advanced Design Logic Technology Development Intel Corporation HillsboroOR United States NVM Solutions Group Intel Corporation HillsboroOR United States Custom Foundry Intel Corporation HillsboroOR United States

ISBN: (纸本)9784863485020

This work introduces the first high-volume manufacturable metal-fuse technology in a 22nm tri-gate high-k metal-gate CMOS process. A high-density array featuring a 16.4μm2 1T1R bit cell is presented that delivers a record low program voltage of 1.6V. This low-voltage operability allows the array to be coupled with logic-voltage power delivery circuits. A charge pump voltage doubler operating on a 1V voltage rail is demonstrated in this paper with healthy fusing yield. © 2015 JSAP.

关键词： Metals

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Arsenic dimer (As2+) Lightly Doped Drain(LDD)implantation study for 20nm logic device development

Arsenic dimer (As2+) Lightly Doped Drain(LDD)implantation st...

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作者： Sun, Hao Li, Yong Zhang, Shuai Xie, Xinyun Cai, Gorge Zhou, Zuyuan Shi, Xuejie He, Yonggen Shi, Weimin Ju, Jianhua Chen, Larry Yu, Shaofeng School of Materials Science and Eng Shanghai University 200072 China Logic Technology and Development Center SMIC 201203 China

ISBN: (纸本)9781607685395

Process variation presents a significant challenge to future scaling of VLSI technology. Junction depth scaling with small Vth variation is required for the 45 nm technology node and beyond. Variations in MOSFET characteristics due to random dopant fluctuation (RDF) may become a fundamental limit to device scaling and circuit complexity. Arsenic dimer (As2+) implant has been used for the formation of ultra-shallow source drain extensions for NMOS transistors below 45nm, CMOS logic process. As Dimer requires only half the dose and twice the energy of equivalent As+ so it is more favorable for much lower energy (+ implantation. However, arsenic dimer implantation showed better Vth mismatch performance than conventional As+ implantation. © 2014 The Electrochemical Society.

关键词： Capacitance

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Optimization of STI oxide recess uniformity for FinFET beyond 20nm

Optimization of STI oxide recess uniformity for FinFET beyon...

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China Semiconductor technology International Conference (CSTIC)

作者： Lijuan Du Hai Zhao Weiguang Yang Rex Yang Larry Chen Shaofeng Yu Gang Mao Qingling Wang Yangkui Lin Shicheng Ding Zhengling Chen School of Materials Science and Engineering Shanghai University Technology Research and Development SMIC Logic Technology and Development Center SMIC Shanghai China

In the process of the FinFETs, shallow trench isolation (STI) oxide recess is very critical to fin height control which has significant impact on the electrical performance of device. In this work, void free STI gap filling process has been demonstrated with process optimization. STI CMP uniformity for both global and local areas has been studied. STI oxide shape and recess uniformity have also been evaluated with different oxide recess methods. Good STI oxide profile and uniformity of STI oxide recess have been achieved through above process optimization.

关键词： Etching Optimization FinFETs Performance evaluation Filling

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Concept design of low frequency telescope for CMB B-mode polarization satellite liteBIRD

arXiv

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arXiv 2021年

作者： Sekimoto, Yutaro Ade, P.A.R. Adler, A. Allys, E. Arnold, K. Auguste, D. Aumont, J. Aurlien, R. Austermann, J. Baccigalupi, C. Banday, A.J. Banerji, R. Barreiro, R.B. Basak, S. Beall, J. Beck, D. Beckman, S. Bermejo, J. de Bernardis, P. Bersanelli, M. Bonis, J. Borrill, J. Boulanger, F. Bounissou, S. Brilenkov, M. Brown, M. Bucher, M. Calabrese, E. Campeti, P. Carones, A. Casas, F.J. Challinor, A. Chan, V. Cheung, K. Chinone, Y. Cliche, J.F. Colombo, L. Columbro, F. Cubas, J. Cukierman, A. Curtis, D. D’Alessandro, G. Dachlythra, N. de Petris, M. Dickinson, C. Diego-Palazuelos, P. Dobbs, M. Dotani, T. Duband, L. Duff, S. Duval, J.M. Ebisawa, K. Elleflot, T. Eriksen, H.K. Errard, J. Essinger-Hileman, T. Finelli, F. Flauger, R. Franceschet, C. Fuskeland, U. Galloway, M. Ganga, K. Gao, J.R. Genova-Santos, R. Gerbino, M. Gervasi, M. Ghigna, T. Gjerløw, E. Gradziel, M.L. Grain, J. Grupp, F. Gruppuso, A. Gudmundsson, J.E. de Haan, T. Halverson, N.W. Hargrave, P. Hasebe, T. Hasegawa, M. Hattori, M. Hazumi, M. Henrot-Versillé, S. Herman, D. Herranz, D. Hill, C.A. Hilton, G. Hirota, Y. Hivon, E. Hlozek, R.A. Hoshino, Y. de la Hoz, E. Hubmayr, J. Ichiki, K. Iida, T. Imada, H. Ishimura, K. Ishino, H. Jaehnig, G. Kaga, T. Kashima, S. Katayama, N. Kato, A. Kawasaki, T. Keskitalo, R. Kisner, T. Kobayashi, Y. Kogiso, N. Kogut, A. Kohri, K. Komatsu, E. Komatsu, K. Konishi, K. Krachmalnicoff, N. Kreykenbohm, I. Kuo, C.L. Kushino, A. Lamagna, L. Lanen, J.V. Lattanzi, M. Lee, A.T. Leloup, C. Levrier, F. Linder, E. Louis, T. Luzzi, G. Maciaszek, T. Maffei, B. Maino, D. Maki, M. Mandelli, S. Martinez-Gonzalez, E. Masi, S. Matsumura, T. Mennella, A. Migliaccio, M. Minami, Y. Mitsuda, K. Montgomery, J. Montier, L. Morgante, G. Mot, B. Murata, Y. Murphy, J.A. Nagai, M. Nagano, Y. Nagasaki, T. Nagata, R. Nakamura, S. Namikawa, T. Natoli, P. Nerval, S. Nishibori, T. Nishino, H. O’Sullivan, C. Ogawa, H. Ogawa, H. Oguri, S. Ohsaki, H. SagamiharaKanagawa252-5210 Japan The University of Tokyo Department of Astronomy Tokyo113-0033 Japan TsukubaIbaraki305-0801 Japan Cardiff University School of Physics and Astronomy CardiffCF10 3XQ United Kingdom Stockholm University Sweden Laboratoire de Physique de l’École Normale Supérieure ENS Université PSL CNRS Sorbonne Université Université de Paris Paris75005 France University of California San Diego Department of Physics San DiegoCA92093-0424 United States Université Paris-Saclay CNRS/IN2P3 IJCLab Orsay91405 France IRAP Université de Toulouse CNRS CNES UPS Toulouse France University of Oslo Institute of Theoretical Astrophysics OsloNO-0315 Norway BoulderCO80305 United States Via Bonomea 265 Trieste34136 Italy Avenida los Castros SN Santander39005 Spain School of Physics Indian Institute of Science Education and Research Thiruvananthapuram Maruthamala PO Vithura ThiruvananthapuramKerala695551 India Stanford University Department of Physics CA94305-4060 United States University of California Berkeley Department of Physics BerkeleyCA94720 United States Plaza Cardenal Cisneros 3 Madrid28040 Spain Dipartimento di Fisica Università La Sapienza INFN Roma P. le A. Moro 2 Roma Italy Dipartimento di Fisica Università degli Studi di Milano INAF-IASF Milano Sezione INFN Milano Italy Computational Cosmology Center BerkeleyCA94720 United States University of California Berkeley Space Science Laboratory BerkeleyCA94720 United States CNRS UMR 8617 Université Paris-Sud 11 Bâtiment 121 Orsay91405 France University of Manchester ManchesterM13 9PL United Kingdom University Paris Diderot CNRS/IN2P3 CEA/Irfu Obs de Paris Sorbonne Paris Cité France Dipartimento di Fisica Università di Roma"Tor Vergata" Sezione INFN Roma2 Italy DAMTP Centre for Mathematical Sciences Wilberforce Road CambridgeCB3 0WA United Kingdom Institute of Astronomy Madingley Road CambridgeCB3 0HA United Kingdom Kavli Instit

LiteBIRD has been selected as JAXA’s strategic large mission in the 2020s, to observe the cosmic microwave background (CMB) B-mode polarization over the full sky at large angular scales. The challenges of LiteBIRD are the wide field-of-view (FoV) and broadband capabilities of millimeter-wave polarization measurements, which are derived from the system requirements. The possible paths of stray light increase with a wider FoV and the far sidelobe knowledge of −56 dB is a challenging optical requirement. A crossed-Dragone configuration was chosen for the low frequency telescope (LFT: 34–161 GHz), one of LiteBIRD’s onboard telescopes. It has a wide field-of-view (18◦ × 9◦) with an aperture of 400 mm in diameter, corresponding to an angular resolution of about 30 arcminutes around 100 GHz. The focal ratio f/3.0 and the crossing angle of the optical axes of 90◦ are chosen after an extensive study of the stray light. The primary and secondary reflectors have rectangular shapes with serrations to reduce the diffraction pattern from the edges of the mirrors. The reflectors and structure are made of aluminum to proportionally contract from warm down to the operating temperature at 5 K. A 1/4 scaled model of the LFT has been developed to validate the wide field-of-view design and to demonstrate the reduced far sidelobes. A polarization modulation unit (PMU), realized with a half-wave plate (HWP) is placed in front of the aperture stop, the entrance pupil of this system. A large focal plane with approximately 1000 AlMn TES detectors and frequency multiplexing SQUID amplifiers is cooled to 100 mK. The lens and sinuous antennas have broadband capability. Performance specifications of the LFT and an outline of the proposed verification plan are presented. © 2021, CC BY.

关键词： Millimeter waves

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Overview of the Medium and High Frequency Telescopes of the LiteBIRD satellite mission

arXiv

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arXiv 2021年

作者： Montier, L. Mot, B. de Bernardis, P. Maffei, B. Pisano, G. Columbro, F. Gudmundsson, J.E. Henrot-Versillé, S. Lamagna, L. Montgomery, J. Prouvé, T. Russell, M. Savini, G. Stever, S. Thompson, K.L. Tsujimoto, M. Tucker, C. Westbrook, B. Ade, P.A.R. Adler, A. Allys, E. Arnold, K. Auguste, D. Aumont, J. Aurlien, R. Austermann, J. Baccigalupi, C. Banday, A.J. Banerji, R. Barreiro, R.B. Basak, S. Beall, J. Beck, D. Beckman, S. Bermejo, J. Bersanelli, M. Bonis, J. Borrill, J. Boulanger, F. Bounissou, S. Brilenkov, M. Brown, M. Bucher, M. Calabrese, E. Campeti, P. Carones, A. Casas, F.J. Challinor, A. Chan, V. Cheung, K. Chinone, Y. Cliche, J.F. Colombo, L. Cubas, J. Cukierman, A. Curtis, D. D’Alessandro, G. Dachlythra, N. de Petris, M. Dickinson, C. Diego-Palazuelos, P. Dobbs, M. Dotani, T. Duband, L. Duff, S. Duval, J.M. Ebisawa, K. Elleflot, T. Eriksen, H.K. Errard, J. Essinger-Hileman, T. Finelli, F. Flauger, R. Franceschet, C. Fuskeland, U. Galloway, M. Ganga, K. Gao, J.R. Genova-Santos, R. Gerbino, M. Gervasi, M. Ghigna, T. Gjerløw, E. Gradziel, M.L. Grain, J. Grupp, F. Gruppuso, A. de Haan, T. Halverson, N.W. Hargrave, P. Hasebe, T. Hasegawa, M. Hattori, M. Hazumi, M. Herman, D. Herranz, D. Hill, C.A. Hilton, G. Hirota, Y. Hivon, E. Hlozek, R.A. Hoshino, Y. de la Hoz, E. Hubmayr, J. Ichiki, K. Iida, T. Imada, H. Ishimura, K. Ishino, H. Jaehnig, G. Kaga, T. Kashima, S. Katayama, N. Kato, A. Kawasaki, T. Keskitalo, R. Kisner, T. Kobayashi, Y. Kogiso, N. Kogut, A. Kohri, K. Komatsu, E. Komatsu, K. Konishi, K. Krachmalnicoff, N. Kreykenbohm, I. Kuo, C.L. Kushino, A. Lanen, J.V. Lattanzi, M. Lee, A.T. Leloup, C. Levrier, F. Linder, E. Louis, T. Luzzi, G. Maciaszek, T. Maino, D. Maki, M. Mandelli, S. Martinez-Gonzalez, E. Masi, S. Matsumura, T. Mennella, A. Migliaccio, M. Minami, Y. Mitsuda, K. Morgante, G. Murata, Y. Murphy, J.A. Nagai, M. Nagano, Y. Nagasaki, T. Nagata, R. Nakamura, S. Namikawa, T. IRAP Université de Toulouse CNRS CNES UPS Toulouse France Dipartimento di Fisica Università La Sapienza INFN Roma P. le A. Moro 2 Roma Italy CNRS UMR 8617 Université Paris-Sud 11 Bâtiment 121 Orsay91405 France Cardiff University School of Physics and Astronomy CardiffCF10 3XQ United Kingdom Stockholm University Sweden Université Paris-Saclay CNRS/IN2P3 IJCLab Orsay91405 France McGill University Physics Department MontrealQCH3A 0G4 Canada Univ. Grenoble Alpes CEA IRIG-DSBT Grenoble38000 France University of California San Diego Department of Physics San DiegoCA92093-0424 United States United Kingdom Okayama University Department of Physics Okayama700-8530 Japan UTIAS University of Tokyo KashiwaChiba277-8583 Japan Menlo ParkCA94025 United States Stanford University Department of Physics CA94305-4060 United States Sagamihara Kanagawa252-5210 Japan University of California Berkeley Department of Physics BerkeleyCA94720 United States Stockholm University Sweden Laboratoire de Physique de l’École Normale Supérieure ENS Université PSL CNRS Sorbonne Université Université de Paris Paris75005 France University of Oslo Institute of Theoretical Astrophysics OsloNO-0315 Norway BoulderCO80305 United States Via Bonomea 265 Trieste34136 Italy Avenida los Castros SN Santander39005 Spain School of Physics Indian Institute of Science Education and Research Thiruvananthapuram Maruthamala PO Vithura ThiruvananthapuramKerala695551 India Plaza Cardenal Cisneros 3 Madrid28040 Spain Dipartimento di Fisica Università degli Studi di Milano INAF-IASF Milano Sezione INFN Milano Italy Computational Cosmology Center BerkeleyCA94720 United States University of California Berkeley Space Science Laboratory BerkeleyCA94720 United States University of Manchester ManchesterM13 9PL United Kingdom - University Paris Diderot CNRS/IN2P3 CEA/Irfu Obs de Paris Sorbonne Paris Cité France Dipartimento di Fisica Univ

LiteBIRD is a JAXA-led Strategic Large-Class mission designed to search for the existence of the primordial gravitational waves produced during the inflationary phase of the Universe, through the measurements of their imprint onto the polarization of the cosmic microwave background (CMB). These measurements, requiring unprecedented sensitivity, will be performed over the full sky, at large angular scales, and over 15 frequency bands from 34 GHz to 448 GHz. The LiteBIRD instruments consist of three telescopes, namely the Low-, Medium- and High-Frequency Telescope (respectively LFT, MFT and HFT). We present in this paper an overview of the design of the Medium-Frequency Telescope (89–224 GHz) and the High-Frequency Telescope (166–448 GHz), the so-called MHFT, under European responsibility, which are two cryogenic refractive telescopes cooled down to 5 K. They include a continuous rotating half-wave plate as the first optical element, two high-density polyethylene (HDPE) lenses and more than three thousand transition-edge sensor (TES) detectors cooled to 100 mK. We provide an overview of the concept design and the remaining specific challenges that we have to face in order to achieve the scientific goals of LiteBIRD. © 2021, CC BY.

关键词： Cosmology

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Characterization of Porous BEOL Dielectrics for Resistive Switching

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ECS Meeting Abstracts 2016年第16期MA2016-01卷

作者： Ye Fan Sean W. King Jeff Bielefeld Marius K Orlowski Virginia Tech ECE Department Intel Corporation Intel Inc Logic Technology Development Lab ECE Department Virginia Tech

Building nonvolatile memory directly into a CMOS low-k/Cu interconnects would reduce latency in connectivity constrained computational devices and reduce chip's footprint by stacking memory on top of logic. In the relentless drive to lower the interconnect time delay, porous low-k dielectrics are being currently explored. In this paper, porous dielectrics are being electrically characterized and their suitability for resistive switching (RS) assessed. Metal-Insulator-Metal (MIM) structures have been manufactured with bottom Cu electrode and with top island-shaped W or Pt counter-electrode. The porous dielectric was a-SiC:H or a-SiOC:H with level of porosity varying between 8% to 25%. The thickness of the porous dielectric is 20 nm and the dielectric constant k varied between 3.1 (@ 8% porosity) and 2.5 (@25% porosity). Some devices have a 2 nm SiCN diffusion barrier (DB), either at the Cu or W/Pt electrode or at both electrodes. The SiCN layers serve a dual-purpose: i) to prevent Cu diffusion, and ii) to prevent Cu, W, and Pt protrusion into pores and voids of porous dielectrics. A bulk majority of devices has been found conductive from the beginning and less than 10% - only those with at least one DB - displayed RS behavior. The intrinsic conductive state has been found to scale with the area of the top island electrode, and its temperature coefficient of resistance (TCR) has been found to be TCR=0.0028 K-1. Both findings are consistent with high concentration of Cu in the dielectric indicating bulk conduction. This means that porous dielectrics are vulnerable to metal diffusion and even two diffusion barriers of 2 nm are marginal in arresting Cu diffusion. When subjected to resistive switching, the intrinsic resistance Rint was found to be dependent on the applied compliance current Icc. Rint decreases linearly with increasing Icc when Icc is smaller than a critical value Icc(crit), typically 10 mA; for Icc larger than Icc(crit) Rint is constant. This finding is e

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Characterization of Porous BEOL Dielectrics for Resistive Switching

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ECS Transactions 2016年第2期72卷

作者： Ye Fan Sean W. King Jeff Bielefeld Marius K Orlowski Virginia Tech ECE Department Intel Corporation Intel Inc Logic Technology Development Lab ECE Department Virginia Tech

Porous back-end dielectric materials with porosity ranging from 8% to 25% have been characterized in terms of their resistive switching behavior. The porous dielectric is sandwiched between Cu and W or Pt electrodes. Some metal-insulator-metal structures have a 2 nm SiCN diffusion barrier at either electrode or at both electrodes. 90% of samples are intrinsically conductive due to strong Cu doping of the dielectric. About 10% of the samples display resistive switching behavior, of which devices with two SiCN barriers can be switched repeatedly, demonstrating that resistive switching in porous dielectrics is feasible. The forming voltage of the filaments increases with increasing porosity of the dielectric. Depending on the voltage polarity, Cu and oxygen vacancy conductive filaments can be formed. The properties of resistive switching established in this work provide a solid basis for further improvement of ReRAM devices based on porous dielectrics compatible with CMOS backend.

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Aging model challenges in deeply scaled tri-gate technologies

Aging model challenges in deeply scaled tri-gate technologie...

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IEEE International Workshop Integrated Reliability

作者： S. Ramey Y. Lu I. Meric S. Mudanai S. Novak C. Prasad J. Hicks Logic Technology Development Quality and Reliability Intel Corp. Hillsboro Oregon U.S.A.

As tri-gate transistor technologies continue to scale to smaller dimensions, a variety of aging mechanisms become important to include in models to accurately predict end-of-life transistor performance. Traditional aging effects such as BTI and hot carrier continue to play a role. However, modeling these mechanisms becomes more complicated with the addition of recovery, variation, and local self-heating. Further, second-order effects are starting to accumulate, such as recovery interactions, minority carrier gate injection, damage localization, and interactions between hot carrier and BTI. This work highlights the roles and impacts of these various effects and how they will need to fit into a comprehensive aging model.

关键词： Aging Degradation logic gates Hot carriers Stress Transistors Integrated circuit modeling

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Techniques to improve read noise margin and write margin for bit-cell of 14nm FINFET node

Techniques to improve read noise margin and write margin for...

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China Semiconductor technology International Conference (CSTIC)

作者： Gong Zhang Yu Li Shaofeng Yu Logic Technology and Development Center SMIC Pudong New Area Shanghai P.R. China

The implementation of FINFET devices in the SRAM cell provides many benefits over that of planar bulk devices. The short channel effect, drive current and mismatch can be better controlled. Several FIN number options among PU(pull up device), PD(pull down device) and PG(pass gate device) can be selected to achieve the good read noise margin and write margin. But in highest-density SRAM cell, in order to minimize the bit-cell area, 3 devices are designed as one FIN only for each. The write margin is suffered deeply by this option unfortunately Some techniques are presented in this paper to increase the yield window of FINFET SRAM with limited FIN number. Some of them are based on process or device performance optimization, such as PG Vt implant, FIN thickness, channel orientation modification, DG device and asymmetrical device, others are based on circuit design, including bit-cell and periphery circuit, such as read or write assist circuit, 8T or 10T cell. With these actions, the better yield window can be achieved. The side effects of these actions are evaluated also, such as the area penalty, complex process and the cost more.

关键词： logic gates FinFETs Doping Noise Layout Silicon

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Transistor reliability variation correlation to threshold voltage

Transistor reliability variation correlation to threshold vo...

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Annual International Symposium on Reliability Physics

作者： S. Ramey M. Chahal P. Nayak S. Novak C. Prasad J. Hicks Logic Technology Development Quality Reliability Intel Corp. Hillsboro Oregon U.S.A.

MOSFET reliability data are often represented as a function of gate overdrive (V G -V T ) with the implicit assumption that overdrive is the appropriate normalizing parameter. While this can be true for some specific sources of variation, reliability does not necessarily track gate overdrive. This paper explores systematic and random sources of variation in TDDB, BTI, and hot carrier degradation data in Intel's tri-gate technologies. We find that random variation captured within a baseline of reliability data does not, in general, trend with overdrive. However, some sources of systematic variation are correlated or, interestingly, anti-correlated with overdrive.

关键词： logic gates Doping MOS devices Stress Degradation Reliability Metals

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