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Device Design Guidelines to Boost up AC Performance of CFET (Complementary Field-Effect-Transistor)-Based Inverter

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2025年

作者： Lim, Jaehyuk Han, Donghwan Sung, Juho Yoon, Seokchan Kang, Sanghyun Kim, Gwon Baac, Hyoung Won Shin, Changhwan Sungkyunkwan University Department of Electrical and Computer Engineering Suwon16419 Korea Republic of Korea University School of Electrical Engineering Seoul02841 Korea Republic of Samsung Electronics Semiconductor Research and Development Center Logic Technology Development Team Hwaseong18448 Korea Republic of

Complementary Field-Effect Transistors (CFETs) have emerged as promising candidates for next-generation semiconductor devices. CFETs feature a structure with an NMOS (or PMOS) transistor at the bottom and a transistor of the opposite type at the top. CFETs can be classified into Fin-CFETs or GAA-CFETs based on their channel structure. In this study, we compare and analyze these two devices to determine which structure is more favorable for device scaling and which device exhibits better performance per unit area. For a reliable analysis, the threshold voltage was adjusted to be the same for all devices. Initially, to compare the DC performance, the on-state drive currents in both linear mode and saturation mode operations were extracted and compared from the IDS-vs.-VGS input-transfer characteristics. Subsequently, CMOS inverters were constructed to compare their AC performance. Six parameters were extracted and compared: high-to-low propagation delay (tpHL), falling time (tf), low-to-high propagation delay (tpLH), rising time (tr), overshoot voltage (Vov), and undershoot voltage (Vund). Based on the results, we suggest which CFET structure is more suitable for device scaling. © 1982-2012 IEEE.

关键词： CMOS integrated circuits

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X-ray photoemission investigation of the beryllium oxide band alignment with magnesium oxide and estimates for other insulating and conducting oxides 239

X-ray photoemission investigation of the beryllium oxide ban...

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239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021

作者： Koh, D. Hudnall, T.W. Bielawski, C.W. Banerjee, S.K. Brockman, J. Kuhn, M. King, S.W. Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin 10100 Burnet Road AustinTX78758 United States Department of Chemistry and Biochemistry Texas State University San MarcosTX78666 United States Ulsan44919 Korea Republic of Ulsan44919 Korea Republic of Ulsan44919 Korea Republic of Logic Technology Development Intel Corporation HillsboroOR97124 United States

ISBN: (纸本)9781607689164

Beryllium oxide (BeO) is a wurtzite structured, large bandgap (Eg > 8 eV) material of significant interest as an alloying agent and cladding dielectric in various oxide based optoelectronic devices. The success of such devices is highly reliant on bandgap and band alignment engineering to achieve sufficient charge carrier and optical confinement for device operation. In this regard, we have utilized x-ray photoemission spectroscopy (XPS) to determine the valence band offset (VBO) between atomic layer deposited (ALD) BeO and a (001) oriented magnesium oxide (MgO) substrate. The BeO VBO with MgO (001) was determined to be 0.1 ± 0.15 eV. Applying the rules of commutativity and transitivity for band alignment, we additionally predict the BeO VBO with other conductive oxides such as ZnO, Ga2O3, and InGaZnO4, to be 1.15 ± 0.3 eV, 0.3 ± 0.2 eV, and 0.9 ± 0.2 eV, respectively. © The Electrochemical Society

关键词： II-VI semiconductors

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Corrigendum to “X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces” [Diam. Relat. Mater. 101 (2020) 107647–7]

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Diamond and Related Materials 2021年 111卷

作者： Donghyi Koh Todd W. Hudnall Christopher W. Bielawski Sanjay K. Banerjee Justin Brockman Markus Kuhn Sean W. King Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin 10100 Burnet Road Austin TX 78758 United States of America Department of Chemistry and Biochemistry Texas State University San Marcos TX 78666 United States of America Center for Multidimensional Carbon Materials (CMCM) Institute for Basic Science (IBS) Ulsan 44919 Republic of Korea Department of Chemistry Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea Department of Energy Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea Logic Technology Development Intel Corporation Hillsboro OR 97124 United States of America

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Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

Research Square

引用

Research Square 2021年

作者： Cheema, Suraj S. Shanker, Nirmaan Wang, Li-Chen Hsu, Cheng-Hsiang Hsu, Shang-Lin Liao, Yu-Hung Jose, Matthew San Gomez, Jorge Li, Wenshen Bae, Jong-Ho Volkman, Steve Kwon, Daewoong Rho, Yoonsoo Pinelli, Gianni Rastogi, Ravi Pipitone, Dominick Stull, Corey Cook, Matthew Tyrrell, Brian Stoica, Vladimir A. Zhang, Zhan Freeland, John W. Tassone, Christopher J. Mehta, Apurva Soheli, Ghazal Thompson, David Suh, Dong Ik Koo, Won-Tae Nam, Kab-Jin Jung, Dong Jin Song, Woo-Bin Lin, Chung-Hsun Nam, Seunggeol Heo, Jinseong Grigoropoulos, Costas P. Shafer, Padraic Fay, Patrick Ramesh, Ramamoorthy Ciston, Jim Datta, Suman Mohamed, Mohamed Hu, Chenming Salahuddin, Sayeef Department of Materials Science and Engineering University of California BerkeleyCA United States Department of Electrical Engineering and Computer Sciences University of California BerkeleyCA United States Department of Electrical Engineering University of Notre Dame Notre DameIN United States Applied Science & Technology University of California BerkeleyCA United States Laser Thermal Laboratory Department of Mechanical Engineering University of California BerkeleyCA United States Lincoln Laboratory Massachusetts Institute of Technology LexingtonMA United States Department of Materials Science and Engineering Pennsylvania State University University ParkPA United States Advanced Photon Source Argonne National Laboratory LemontIL United States Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo ParkCA United States Applied Materials Santa ClaraCA United States SK Hynix Inc. Gyeonggi-do Icheon17336 Korea Republic of Semiconductor R&D Center Samsung Electronics Gyeonggi-do 445-330 Korea Republic of Logic Technology Development Intel Corporation HillsboroOR97124 United States Samsung Advanced Institute of Technology Samsung Electronics Gyeonggi-do 445-330 Korea Republic of Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA United States Department of Physics University of California BerkeleyCA United States Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA United States National Center for Electron Microscopy Molecular Foundry Lawrence Berkeley National Laboratory BerkeleyCA United States

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to the adoption of high-κ dielectric HfO2 in the gate stack in 20082, which remains as the material of choice to date. Here, we report HfO2-ZrO2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors and scaled down to ∼ 20 Å, the same gate oxide thickness required for high performance transistors. The overall EOT (equivalent oxide thickness) in metal-oxide-semiconductor capacitors is equivalent to ∼ 6.5 Å effective SiO2 thickness, which is, counterintuitively, even smaller than the interfacial SiO2 thickness (8.0-8.5 Å) itself. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO2-based high-κ dielectric gate stacks without scavenging the interfacial SiO2, which has adverse effects on the electron transport and gate leakage current3. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. Therefore, our work demonstrates that HfO2-ZrO2 multilayers with competing ferroelectric-antiferroelectric order, stabilized in the 2 nm thickness regime, provides a new path towards advanced gate oxide stacks in electronic devices beyond the conventional HfO2-based high-κ dielectrics. © 2021, CC BY.

关键词： Silica

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Identifying Defects Responsible For Leakage Currents in Thin Dielectric Films

Identifying Defects Responsible For Leakage Currents in Thin...

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IEEE International Workshop Integrated Reliability

作者： Ryan J. Waskiewicz Elias B. Frantz Patrick M. Lenahan Sean W. King Nicholas J. Harmon Michael E. Flatté Engineering Science and Mechanics The Pennsylvania State University University Park PA USA Logic Technology Development Intel Corporation Hillsboro OR USA The Department of Physics and Astronomy and Optical Science and Technology Center University of Iowa Iowa City PA USA

ISBN: (纸本)9781538660409

Leakage currents in dielectric thin films are important reliability concerns. We show that two techniques are sensitive to and can probe structural information about the atomic scale defect centers that are responsible for leakage currents in technologically important thin films. We investigate leakage currents in a-SiN:H thin films with both electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR). In all measurements, the linewidth of the EDMR/NZFMR response is a function of the N/Si ratio of the film; the width provides information about the leakage defect structure. The NZFMR measurement provides the possibility of combining the sensitivity and at least some of the analytical power of EDMR with the simplicity of an apparatus that could potentially be implemented during fabrication of devices.

关键词： Nitrogen Leakage currents Extraterrestrial measurements Couplings Reliability Magnetic field measurement Magnetic fields

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Erratum: “Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides” [J. Vac. Sci. Technol. B 37, 041206 (2019)]

引用

Journal of Vacuum Science & technology B 2020年第3期38卷

作者： Donghyi Koh Sanjay K. Banerjee Chris Locke Stephen E. Saddow Justin Brockman Markus Kuhn Sean W. King 1Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin 10100 Burnet Road Austin Texas 78758 2Department of Electrical Engineering University of South Florida 4202 East Fowler Ave. Tampa Florida 33620 3Intel Corporation Logic Technology Development 5200 NE Elam Young Parkway Hillsboro Oregon 97124

The corresponding authors have unfortunately forgotten to name two collaborators as co-authors. The authors listed on page 041506-1 should include Dr. T. W. Hud

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Sub-Fin solid source doping in the 14nm and sub-14 FinFET device

Sub-Fin solid source doping in the 14nm and sub-14 FinFET de...

引用

China Semiconductor technology International Conference (CSTIC)

作者： Wen Yan Fei Zhou Chengqing Wei Hai Zhao CanYang Xu Yong Li Jianhua Ju Weiguang Yang School of Materials Science and Engineering Shanghai University SMIC Logic Technology and Development Center

The FinFET device shows well Gate control ability on the channel charge beyond the 14nm and sub-14nm node due to superior electrostatic control ability. The Sub Fin Bottom punch through is a major concern for the 14nm and sub-14nm FinFET device. The high dose punch through stop IMP is popularly used to control the Fin Bottom punch through, but it suffered Fin damage and device performance degradation. Thus, in this paper, a new channel stop method of Solid Source Doping (SSD) was investigated because of its better doping profile control, lower Fin damage. In this paper we reported the SSD SIMS data both on the blanket wafer and the structure wafer, and the Dopant profile result comparison between the IMP and the SSD method based on the TCAD, verified the reliability and advantage of SSD.

关键词： FinFETs Films Doping profiles Performance evaluation Solids logic gates

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Concept design of low frequency telescope for CMB B-mode polarization satellite liteBIRD

arXiv

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arXiv 2021年

作者： Sekimoto, Yutaro Ade, P.A.R. Adler, A. Allys, E. Arnold, K. Auguste, D. Aumont, J. Aurlien, R. Austermann, J. Baccigalupi, C. Banday, A.J. Banerji, R. Barreiro, R.B. Basak, S. Beall, J. Beck, D. Beckman, S. Bermejo, J. de Bernardis, P. Bersanelli, M. Bonis, J. Borrill, J. Boulanger, F. Bounissou, S. Brilenkov, M. Brown, M. Bucher, M. Calabrese, E. Campeti, P. Carones, A. Casas, F.J. Challinor, A. Chan, V. Cheung, K. Chinone, Y. Cliche, J.F. Colombo, L. Columbro, F. Cubas, J. Cukierman, A. Curtis, D. D’Alessandro, G. Dachlythra, N. de Petris, M. Dickinson, C. Diego-Palazuelos, P. Dobbs, M. Dotani, T. Duband, L. Duff, S. Duval, J.M. Ebisawa, K. Elleflot, T. Eriksen, H.K. Errard, J. Essinger-Hileman, T. Finelli, F. Flauger, R. Franceschet, C. Fuskeland, U. Galloway, M. Ganga, K. Gao, J.R. Genova-Santos, R. Gerbino, M. Gervasi, M. Ghigna, T. Gjerløw, E. Gradziel, M.L. Grain, J. Grupp, F. Gruppuso, A. Gudmundsson, J.E. de Haan, T. Halverson, N.W. Hargrave, P. Hasebe, T. Hasegawa, M. Hattori, M. Hazumi, M. Henrot-Versillé, S. Herman, D. Herranz, D. Hill, C.A. Hilton, G. Hirota, Y. Hivon, E. Hlozek, R.A. Hoshino, Y. de la Hoz, E. Hubmayr, J. Ichiki, K. Iida, T. Imada, H. Ishimura, K. Ishino, H. Jaehnig, G. Kaga, T. Kashima, S. Katayama, N. Kato, A. Kawasaki, T. Keskitalo, R. Kisner, T. Kobayashi, Y. Kogiso, N. Kogut, A. Kohri, K. Komatsu, E. Komatsu, K. Konishi, K. Krachmalnicoff, N. Kreykenbohm, I. Kuo, C.L. Kushino, A. Lamagna, L. Lanen, J.V. Lattanzi, M. Lee, A.T. Leloup, C. Levrier, F. Linder, E. Louis, T. Luzzi, G. Maciaszek, T. Maffei, B. Maino, D. Maki, M. Mandelli, S. Martinez-Gonzalez, E. Masi, S. Matsumura, T. Mennella, A. Migliaccio, M. Minami, Y. Mitsuda, K. Montgomery, J. Montier, L. Morgante, G. Mot, B. Murata, Y. Murphy, J.A. Nagai, M. Nagano, Y. Nagasaki, T. Nagata, R. Nakamura, S. Namikawa, T. Natoli, P. Nerval, S. Nishibori, T. Nishino, H. O’Sullivan, C. Ogawa, H. Ogawa, H. Oguri, S. Ohsaki, H. SagamiharaKanagawa252-5210 Japan The University of Tokyo Department of Astronomy Tokyo113-0033 Japan TsukubaIbaraki305-0801 Japan Cardiff University School of Physics and Astronomy CardiffCF10 3XQ United Kingdom Stockholm University Sweden Laboratoire de Physique de l’École Normale Supérieure ENS Université PSL CNRS Sorbonne Université Université de Paris Paris75005 France University of California San Diego Department of Physics San DiegoCA92093-0424 United States Université Paris-Saclay CNRS/IN2P3 IJCLab Orsay91405 France IRAP Université de Toulouse CNRS CNES UPS Toulouse France University of Oslo Institute of Theoretical Astrophysics OsloNO-0315 Norway BoulderCO80305 United States Via Bonomea 265 Trieste34136 Italy Avenida los Castros SN Santander39005 Spain School of Physics Indian Institute of Science Education and Research Thiruvananthapuram Maruthamala PO Vithura ThiruvananthapuramKerala695551 India Stanford University Department of Physics CA94305-4060 United States University of California Berkeley Department of Physics BerkeleyCA94720 United States Plaza Cardenal Cisneros 3 Madrid28040 Spain Dipartimento di Fisica Università La Sapienza INFN Roma P. le A. Moro 2 Roma Italy Dipartimento di Fisica Università degli Studi di Milano INAF-IASF Milano Sezione INFN Milano Italy Computational Cosmology Center BerkeleyCA94720 United States University of California Berkeley Space Science Laboratory BerkeleyCA94720 United States CNRS UMR 8617 Université Paris-Sud 11 Bâtiment 121 Orsay91405 France University of Manchester ManchesterM13 9PL United Kingdom University Paris Diderot CNRS/IN2P3 CEA/Irfu Obs de Paris Sorbonne Paris Cité France Dipartimento di Fisica Università di Roma"Tor Vergata" Sezione INFN Roma2 Italy DAMTP Centre for Mathematical Sciences Wilberforce Road CambridgeCB3 0WA United Kingdom Institute of Astronomy Madingley Road CambridgeCB3 0HA United Kingdom Kavli Instit

LiteBIRD has been selected as JAXA’s strategic large mission in the 2020s, to observe the cosmic microwave background (CMB) B-mode polarization over the full sky at large angular scales. The challenges of LiteBIRD are the wide field-of-view (FoV) and broadband capabilities of millimeter-wave polarization measurements, which are derived from the system requirements. The possible paths of stray light increase with a wider FoV and the far sidelobe knowledge of −56 dB is a challenging optical requirement. A crossed-Dragone configuration was chosen for the low frequency telescope (LFT: 34–161 GHz), one of LiteBIRD’s onboard telescopes. It has a wide field-of-view (18◦ × 9◦) with an aperture of 400 mm in diameter, corresponding to an angular resolution of about 30 arcminutes around 100 GHz. The focal ratio f/3.0 and the crossing angle of the optical axes of 90◦ are chosen after an extensive study of the stray light. The primary and secondary reflectors have rectangular shapes with serrations to reduce the diffraction pattern from the edges of the mirrors. The reflectors and structure are made of aluminum to proportionally contract from warm down to the operating temperature at 5 K. A 1/4 scaled model of the LFT has been developed to validate the wide field-of-view design and to demonstrate the reduced far sidelobes. A polarization modulation unit (PMU), realized with a half-wave plate (HWP) is placed in front of the aperture stop, the entrance pupil of this system. A large focal plane with approximately 1000 AlMn TES detectors and frequency multiplexing SQUID amplifiers is cooled to 100 mK. The lens and sinuous antennas have broadband capability. Performance specifications of the LFT and an outline of the proposed verification plan are presented. © 2021, CC BY.

关键词： Millimeter waves

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Overview of the Medium and High Frequency Telescopes of the LiteBIRD satellite mission

arXiv

引用

arXiv 2021年

作者： Montier, L. Mot, B. de Bernardis, P. Maffei, B. Pisano, G. Columbro, F. Gudmundsson, J.E. Henrot-Versillé, S. Lamagna, L. Montgomery, J. Prouvé, T. Russell, M. Savini, G. Stever, S. Thompson, K.L. Tsujimoto, M. Tucker, C. Westbrook, B. Ade, P.A.R. Adler, A. Allys, E. Arnold, K. Auguste, D. Aumont, J. Aurlien, R. Austermann, J. Baccigalupi, C. Banday, A.J. Banerji, R. Barreiro, R.B. Basak, S. Beall, J. Beck, D. Beckman, S. Bermejo, J. Bersanelli, M. Bonis, J. Borrill, J. Boulanger, F. Bounissou, S. Brilenkov, M. Brown, M. Bucher, M. Calabrese, E. Campeti, P. Carones, A. Casas, F.J. Challinor, A. Chan, V. Cheung, K. Chinone, Y. Cliche, J.F. Colombo, L. Cubas, J. Cukierman, A. Curtis, D. D’Alessandro, G. Dachlythra, N. de Petris, M. Dickinson, C. Diego-Palazuelos, P. Dobbs, M. Dotani, T. Duband, L. Duff, S. Duval, J.M. Ebisawa, K. Elleflot, T. Eriksen, H.K. Errard, J. Essinger-Hileman, T. Finelli, F. Flauger, R. Franceschet, C. Fuskeland, U. Galloway, M. Ganga, K. Gao, J.R. Genova-Santos, R. Gerbino, M. Gervasi, M. Ghigna, T. Gjerløw, E. Gradziel, M.L. Grain, J. Grupp, F. Gruppuso, A. de Haan, T. Halverson, N.W. Hargrave, P. Hasebe, T. Hasegawa, M. Hattori, M. Hazumi, M. Herman, D. Herranz, D. Hill, C.A. Hilton, G. Hirota, Y. Hivon, E. Hlozek, R.A. Hoshino, Y. de la Hoz, E. Hubmayr, J. Ichiki, K. Iida, T. Imada, H. Ishimura, K. Ishino, H. Jaehnig, G. Kaga, T. Kashima, S. Katayama, N. Kato, A. Kawasaki, T. Keskitalo, R. Kisner, T. Kobayashi, Y. Kogiso, N. Kogut, A. Kohri, K. Komatsu, E. Komatsu, K. Konishi, K. Krachmalnicoff, N. Kreykenbohm, I. Kuo, C.L. Kushino, A. Lanen, J.V. Lattanzi, M. Lee, A.T. Leloup, C. Levrier, F. Linder, E. Louis, T. Luzzi, G. Maciaszek, T. Maino, D. Maki, M. Mandelli, S. Martinez-Gonzalez, E. Masi, S. Matsumura, T. Mennella, A. Migliaccio, M. Minami, Y. Mitsuda, K. Morgante, G. Murata, Y. Murphy, J.A. Nagai, M. Nagano, Y. Nagasaki, T. Nagata, R. Nakamura, S. Namikawa, T. IRAP Université de Toulouse CNRS CNES UPS Toulouse France Dipartimento di Fisica Università La Sapienza INFN Roma P. le A. Moro 2 Roma Italy CNRS UMR 8617 Université Paris-Sud 11 Bâtiment 121 Orsay91405 France Cardiff University School of Physics and Astronomy CardiffCF10 3XQ United Kingdom Stockholm University Sweden Université Paris-Saclay CNRS/IN2P3 IJCLab Orsay91405 France McGill University Physics Department MontrealQCH3A 0G4 Canada Univ. Grenoble Alpes CEA IRIG-DSBT Grenoble38000 France University of California San Diego Department of Physics San DiegoCA92093-0424 United States United Kingdom Okayama University Department of Physics Okayama700-8530 Japan UTIAS University of Tokyo KashiwaChiba277-8583 Japan Menlo ParkCA94025 United States Stanford University Department of Physics CA94305-4060 United States Sagamihara Kanagawa252-5210 Japan University of California Berkeley Department of Physics BerkeleyCA94720 United States Stockholm University Sweden Laboratoire de Physique de l’École Normale Supérieure ENS Université PSL CNRS Sorbonne Université Université de Paris Paris75005 France University of Oslo Institute of Theoretical Astrophysics OsloNO-0315 Norway BoulderCO80305 United States Via Bonomea 265 Trieste34136 Italy Avenida los Castros SN Santander39005 Spain School of Physics Indian Institute of Science Education and Research Thiruvananthapuram Maruthamala PO Vithura ThiruvananthapuramKerala695551 India Plaza Cardenal Cisneros 3 Madrid28040 Spain Dipartimento di Fisica Università degli Studi di Milano INAF-IASF Milano Sezione INFN Milano Italy Computational Cosmology Center BerkeleyCA94720 United States University of California Berkeley Space Science Laboratory BerkeleyCA94720 United States University of Manchester ManchesterM13 9PL United Kingdom - University Paris Diderot CNRS/IN2P3 CEA/Irfu Obs de Paris Sorbonne Paris Cité France Dipartimento di Fisica Univ

LiteBIRD is a JAXA-led Strategic Large-Class mission designed to search for the existence of the primordial gravitational waves produced during the inflationary phase of the Universe, through the measurements of their imprint onto the polarization of the cosmic microwave background (CMB). These measurements, requiring unprecedented sensitivity, will be performed over the full sky, at large angular scales, and over 15 frequency bands from 34 GHz to 448 GHz. The LiteBIRD instruments consist of three telescopes, namely the Low-, Medium- and High-Frequency Telescope (respectively LFT, MFT and HFT). We present in this paper an overview of the design of the Medium-Frequency Telescope (89–224 GHz) and the High-Frequency Telescope (166–448 GHz), the so-called MHFT, under European responsibility, which are two cryogenic refractive telescopes cooled down to 5 K. They include a continuous rotating half-wave plate as the first optical element, two high-density polyethylene (HDPE) lenses and more than three thousand transition-edge sensor (TES) detectors cooled to 100 mK. We provide an overview of the concept design and the remaining specific challenges that we have to face in order to achieve the scientific goals of LiteBIRD. © 2021, CC BY.

关键词： Cosmology

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Challenges and characterization of 14nm N-type bulk FinFET

Challenges and characterization of 14nm N-type bulk FinFET

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China Semiconductor technology International Conference (CSTIC)

作者： Yong Li Jianhua Ju Miao Liao Logic Technology and Development Center SMIC

ISBN: (纸本)9781479972425

FinFET device has better electrostatic performance than planar device and makes devices further scaling possible. N-type bulk FinFET process challenges such as implantation induced Fin damages, Source/Darin (S/D) epitaxy and Fin profile control were discussed. Pre-Fin anti-punch trough (APT) implantation and low beam current n-type light-doped-drain (NLDD) implantation combined with optimized post-implant annealing are both benefit to eliminate or reduce the implantation induced Fin damages. Within S/D Si epitaxy process, contact resistance, resistor resistance and transistor external resistance were much reduced. With the optimized process, n-type bulk FinFET device performance was much improved. Gate oxide performance and electron mobility were compared with previous generations; swing slope and drain induced barrier lowering were also got from the IdVg curves. Some reliability evaluations such as GOI, TDDB and HCI were performed and passed the specifications. For n-type bulk FinFET further improvement directions were proposed at last.

关键词： logic gates Silicon Epitaxial growth Human computer interaction Process control MOS devices Random access memory

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