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Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics

MRS Online Proceedings Library (OPL) 2011年第1期990卷 0990-B03-12-0990-B03-12页

作者： Hualiang Shi Junjing Bao Junjun liu Huai Huang Paul S. Ho Michael D Goodner Mansour Moinpour Grant M Kloster hlshi@physics.utexas.edu The University of Texas at Austin Laboratory for Interconnect and Packaging PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States 512-471-8966 512-471-8969 jjbao@physics.utexas.edu The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States liujj@mail.texas.edu The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States hhuang@physics.utexas.edu The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States paulho@mail.utexas.edu The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States michael.d.goodner@*** Intel Corporation Logic Technology Development Hillsboro OR 97124 United States mansour.moinpour@*** Intel Corporation Logic Technology Development Hillsboro OR 97124 United States grant.m.kloster@*** Intel Corporation Logic Technology Development Hillsboro OR 97124 United States

During an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.

关键词： dielectric x-ray photoelectron spectroscopy (XPS) Raman spectroscopy

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Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films

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MRS Online Proceedings Library (OPL) 2011年第1期1079卷 1079-N02-10-1079-N02-10页

作者： Huai Huang Junjing Bao Junjun Liu Ryan Scott Smith Yangming Sun Paul S. Ho Michael L. McSwiney Mansour Moinpour Grant M Kloster hhuang@physics.utexas.edu The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center the University of Texas at Austin Austin TX 78758 Austin TX 78758 United States 512-471-8995 512-471-8969 hhuang@physics.utexas.edu Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States jjbao@physics.utexas.edu Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States junjun.liu@*** Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States scott_smith@mail.utexas.edu Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States yangming@mail.utexas.edu Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States paulho@mail.utexas.edu Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States michael.l.mcswiney@*** Intel Corporation Logic Technology Development Hillsboro OR 97124 United States mansour.moinpour@*** Intel Corporation Logic Technology Development Hillsboro OR 97124 United States grant.m.kloster@*** Intel Corporation Logic Technology Development Hillsboro OR 97124 United States

Methyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was developed for dielectric recovery of plasma damaged OSG low-k dielectrics. The methyl or phenyl containing silylation agents were used to convert the hydrophilic -OH groups to hydrophobic groups. Compared with Trimethylchlorosilane (TMCS) and Phenyltrimethoxysilane (PTMOS), Dimethyldichlorosilane (DMDCS) was found to be more effective in recovering surface carbon concentration and surface hydrophobicity. But the carbon recovery effect was limited to the surface ***, UV radiation with thermal activation was applied for dielectric recovery of plasma damaged OSG low-k dielectrics. The combined UV/thermal process was found to be efficient in reducing −OH, physisorbed water, and C=O bonds. The dielectric constant was recovered within 5% of the pristine sample and the leakage current was also much reduced. Aging test in air showed that no moisture retake was observed, indicating the repaired film was stable.

关键词： dielectric reactive ion etching microelectronics

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NMOS Narrow Width Devices Drive Current Improvements through STI Processes and Channel Implantation Optimization

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ECS Transactions 2010年第1期27卷

作者： Zhaoxu Shen Jianhua Ju Brisk Wang Allan Zhou Jinhua Liu H.-M. Ho X.-J. Ning Logic Technology Development Center Semiconductor Manufacturing International Corporation Wenchang Road #18 Beijing Beijing 100176 China Logic Technology Development Center Semiconductor Manufacturing International Corporation Semiconductor Manufacturing International Corporation Wenchang Road #18 Beijing Beijing 100176 China LTD Logic2 Device SMIC(BJ) BeiJing BeiJing 100176 China Semiconductor Manufacturing International Corporation

NMOS narrow width transistor driving current as a function of shallow trench isolation (STI) processes and channel implant conditions were studied on a 65nm CMOS technology. It is found that the magnitude of compressive stress in STI could modulate the trend of NMOS drive current versus width dependence that was attributed to channel dose profile uneven distribution under the influence of stress. It is seen that the channel body effect factor (gamma) of large width (W=10um) transistor is smaller than that of narrow width device (W=0.12um). This difference increases as STI compressive stress scales up. The phenomena are consistent with the analysis that Boron dose distribution varies as STI stress changes. it is shown that the down trend of drive current for narrow width transistors could be minimized by STI process optimization, or by introducing indium implantation during channel implantation processes.

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Fluorine IMP Effect on Negative Bias Temperature Instability and Process Induced Defects

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ECS Transactions 2010年第1期27卷

作者： Allan Zhou Jinhua Liu K. Zheng Jianhua Ju Jing Zhang Z.-H. Gan H.-M. Ho X.-J. Ning Semiconductor Manufacturing International Corporation Wenchang Road #18 Beijing Beijing 100176 China LTD Logic2 Device SMIC(BJ) BeiJing BeiJing 100176 China Semiconductor Manufacturing International Corporation Logic Technology Development Center Semiconductor Manufacturing International Corporation

Negative Bias Temperature Instability (NBTI) is one of the major reliability concerns for pMOSFETs as the transistor gate oxide thickness is scaling down. Incorporating fluorine into the gate oxide is a well-known method to effectively suppress NBTI. The efficiency and mechanism are studied carefully in earlier reports. The focus of this paper is to analyze how the fluorine incorporation impacts on device performance and process integration. Different fluorine implantation conditions and their impacts on NBTI lifetime, device performance and process integration were studied and analyzed. The results demonstrated that fluorine implants could prolong pMOSFETs NBTI lifetime, but would reduce threshold voltage and degrade Ion-Ioff performance. Meanwhile, process defects were found if the F2 dose in the active area is greater than a certain value. Analysis and discussions are carried out to understand those phenomena.

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Anomalous Off-Leakage Currents in CMOS Devices and Its Countermeasures

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ECS Transactions 2010年第1期27卷

作者： Yonggen He Jared Kuo Yong Chen Dibao Zhou Jianhua Ju Ji Yue Tang Zhibiao Zhao Ming Yin Junfeng Lu LTD Semiconductor Manufacturing International Corporation No.18 ZhangJiang Road Pudong New Area ShangHai ShangHai ShangHai 201203 China Semiconductor Manufacturing International Corporation Logic Technology Development Center Semiconductor Manufacturing International Corporation Wenchang Road #18 Beijing Beijing 100176 China Logic Technology Development Center Semiconductor Manufacturing International Corporation Applied Materials China Applied Materials China Shanghai China Mattson Technology Inc. Varian Semiconductor Equipment

In this paper, an anomalous off-leakage current (AOLC) issue in CMOS devices is reported. As observed in pMOS universal curve (Ioff vs. Idsat), for AOLC, there are some scattering points with 2~3 magnitude order higher off-leakage current as compared with normal ones. We have identified this AOLC mechanism as that PMOS implanted dopant species penetrate through gate-stack with narrow process window. This is resulted from shrinking of poly-SiON gate length and high dose source-drain (SD), as well as source-drain extension ion implants applied in these devices. To suppress AOLC, several process factors have been investigated and optimized from an integration point of view, including: a) nitrogen concentration and profile control in SiON gate; b) poly thickness optimization and grain size reduction; and c) ion implant optimization, especially by reducing or eliminating energy contamination (EC).

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Threshold Voltage Increasing Induced by Poly Silicon Gate Counter Pre-Doping in NMOSFET

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ECS Transactions 2010年第1期27卷

作者： Jinhua Liu Allan Zhou K. Zheng Jimmy Wu Z.-H. Gan Shuaigong Chen Huachun Guo Guiming Wang Jianhua Ju H.-M. Ho Jay Ning I.C. Chen LTD Logic2 Device SMIC(BJ) BeiJing BeiJing 100176 China Semiconductor Manufacturing International Corporation Wenchang Road #18 Beijing Beijing 100176 China Semiconductor Manufacturing International Corporation Logic Technology Development Center Semiconductor Manufacturing International Corporation

PMOS poly Si gate blank pre-doping combined with NMOS poly Si counter pre-doping process scheme is demonstrated to keep the benefit of one photolithography saving while no device or product properties degradation.

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Etch arts of dual damascus structure and their impacts on WAT/VBD in 65nm Cu interconnects

Etch arts of dual damascus structure and their impacts on WA...

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ISTC/CSTIC 2009 (CISTC)

作者： Sun, Wu Chang, Shih-Mou Zhang, Hai-Yang Yin, Xiaoming Fu, Liya Han, Baodong Wang, Xinpeng Wu, Yongqin Logic Technology Development Center Semiconductor Manufacturing International Corporation BDA No. 18 Wen Chang Rd. Beijing 100176 China

ISBN: (纸本)9781615676460

In this paper, based on the via-first DD technology, we focus on the profile tuning of via and trench and the liner removal in order to optimize the trench profile. Via profile tuning include how to realize the via with the bowling profile, vertical profile and tapering profile. Trench profile tuning emphasizes the formation mechanism of bowling profile and top rounding profile. Footing profile and under-cutting profile of via bottom in liner open step is also addressed. The effect of different etching profiles on Rc, VBD (Breakdown Voltage) are examined. Results show that different via profiles have no impact on Rc, top-rounding trench-profile results in worse VBD, while under-cut & footing liner would deliver lower and higher Rc, respectively. ©The Electrochemical Society.

关键词： Tuning

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Influence of polymeric gas on sidewall profile and defect performance of aluminum metal etch

Influence of polymeric gas on sidewall profile and defect pe...

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ISTC/CSTIC 2009 (CISTC)

作者： Wang, Xin-Peng Zhang, Hai-Yang Shen, Man-Hua Sun, Wu Chang, Shih-Mou Logic Technology Development Center Semiconductor Manufacturing International Corporation No. 18 Zhang Jiang Rd. Pudong New Area Shanghai 201203 China

ISBN: (纸本)9781615676460

As the semiconductor industry moves to 65nm node and beyond, Al metal etch has become more challenging for its insufficient amount of photo-resist (PR) protection to achieve the desired sidewall profile and keep the corrosion free performance simultaneously. In this paper, we focus on the selecting appropriate polymeric gas and identifying the effect of various etch polymeric gases on Al metal sidewall profile and their corrosion defect performance. Three typical gases including N2, CHF3 and CH4 are selected in this paper. The observations from scanning electron micrographs indicate N2-based recipe is apt to form the severely tapering sidewall profile while CHF3-based recipe has loose polymer protection over the sidewall, thus leading to much worse corrosion defect performance. As expected, CH4-based recipe outperforms the two above polymeric gases. It not only shows the acceptable sidewall profile but also delivers the defect performance of free corrosion. ©The Electrochemical Society.

关键词： Gases

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O2 plasma damage and dielectric recoveries to patterned CDO low-k dielectrics

O2 plasma damage and dielectric recoveries to patterned CDO ...

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Advanced Metallization Conference 2008, AMC 2008

作者： Huang, H. Bao, J. Shi, H. Ho, P.S. McSwiney, M.L. Goodner, M.D. Moinpour, M. Kloster, G.M. Laboratory for Interconnect and Packaging Microelectronics Research Center University of Texas at Austin Austin TX 78758 United States Intel Corporation Logic Technology Development Hillsboro OR 97124 United States

ISBN: (纸本)9781605111254

This paper investigated the mechanism of oxygen plasma damage to patterned low-κ structures and dielectric recovery by silylation. Plasma damage was induced to patterned structures using a remote hybrid plasma source with separate ions and atomic radicals. In addition, the oxygen plasma damage to blanket low-κ films and its angular dependence were studied. The damage was characterized by a combination of analytical techniques and the results indicated that damage by ions was anisotropic while damage by radicals was isotropic. The carbon depletion depth was found to be controlled by diffusion of radical species. Sidewall recovery by trimethylchlorosilane (TMCS) vapor silylation was performed and it was found to be more effective for recovery of the sidewall carbon loss induced by O2 radicals compared to that by hybrid O2. © 2009 Materials Research Society.

关键词： Low-k dielectric

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Global Scaling Inductor Models with Temperature Effect

Global Scaling Inductor Models with Temperature Effect

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2008 9th International Conference on Solid-State and Integrated-Circuit technology

作者： Danmy He Jenhao Cheng Leo Chen Logic Technology Development Center SMIC

This paper presents global lumped-element circuit models of spiral inductor and differential inductor respectively considering quality factor dependence on *** resistance components in equivalent circuits of spiral inductor and differential inductor were adopted to reflect quality factor dependence on temperature in global *** the global models were shown to give excellent agreement with measured data for inductors of various dimension over temperature range from -40℃to 125℃,which will facilitate customers to design circuits for worst temperature conditions in real world applications.

关键词： Global Scaling Inductor Models with Temperature Effect

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