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International Conference on Solid-State and Integrated Circuit technology

作者： Danmy He Jenhao Cheng Leo Chen Logic Technology Development Center SMIC Shanghai China

This paper presents global lumped-element circuit models of spiral inductor and differential inductor respectively considering quality factor dependence on temperature. Metal resistance components in equivalent circuits of spiral inductor and differential inductor were adopted to reflect quality factor dependence on temperature in global model. And the global models were shown to give excellent agreement with measured data for inductors of various dimension over temperature range from -40°C to 125°C, which will facilitate customers to design circuits for worst temperature conditions in real world applications.

关键词： Inductors Spirals Q factor Temperature dependence Temperature distribution Circuits Frequency Electrical resistance measurement Temperature measurement Parasitic capacitance

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Dielectric recoveries on O2 plasma damaged organosilicate low-k dielectrics

Dielectric recoveries on O2 plasma damaged organosilicate lo...

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24th Session of the Advanced Metallization Conference 2007, AMC 2007

作者： Shi, Hualiang Bao, Junjing Liu, Junjun Huang, Huai Smith, Ryan Scott Zhao, Qiu Ho, Paul S. Goodner, Michael D. Moinpour, Mansour Kloster, Grant M. Laboratory for Interconnect and Packaging University of Texas at Austin Microelectronics Research Center Austin TX 78758 United States Logic Technology Development Intel Corporation Hillsboro OR 97124 United States

ISBN: (纸本)9781558999923

The O2 plasma damage of porous OSG films was investigated by examining the origin of the dielectric loss and using a CH4 plasma treatment for dielectric recovery. To study the dielectric loss, a combination of analytical techniques including spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTCR) was used and the Kramers-Kronig dispersion relation was applied to deduce the contribution from the polarization components. The results indicated that the dielectric loss is dominated by the dipole contribution in comparison with the electronic and the ionic polarizations. To trace the origin of the dipole contribution, quantum chemistry calculations were performed to evaluate the dipole moment of various molecular clusters derived from the basic unit of the MSQ material as a result of plasma interaction. The uptake of physisorbed water molecules was found to be primarily responsible for the dipole moment increase and the dielectric loss. The dielectric recovery by CH4 plasma treatment was investigated using a combination of x-ray, electron spectroscopy and ellipsometry techniques together with contact angle measurements. After CH4 plasma treatment, the surface carbon concentration and surface hydrophobicity were found to be partially recovered. A gradient densified surface layer was found on top of the damaged OSG film containing certain amounts of C=C and Si-CH3 or C-C bonds. The C-V hysteresis and the leakage current were reduced, confirming a partial removal of Si-OH bond and Si dangling bond. XPS depth profiling revealed that the dielectric recovery was limited mainly to the surface region of about 10 nm. © 2008 Materials Research Society.

关键词： Dipole moment

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Dielectric recovery of plasma damaged organosilicate low-k films

Dielectric recovery of plasma damaged organosilicate low-k f...

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2008 MRS Spring Meeting

作者： Shi, Hualiang Bao, Junjing Huang, Huai Liu, Junjun Smith, Ryan Scott Sun, Yangming Ho, Paul S. Mcswiney, Michael L. Moinpour, Mansour Kloster, Grant M Laboratory for Interconnect and Packaging Microelectronics Research Center University of Texas at Austin Pickle Research Campus Austin TX 78758 United States Logic Technology Development Intel Corporation Hillsboro OR 97124 United States

ISBN: (纸本)9781605608648

Methyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was developed for dielectric recovery of plasma damaged OSG low-k dielectrics. The methyl or phenyl containing silylation agents were used to convert the hydrophilic-OH groups to hydrophobic groups. Compared with Trimethylchlorosilane (TMCS) and Phenyltrimethoxysilane (PTMOS), Dimethyldichlorosilane (DMDCS) was found to be more effective in recovering surface carbon concentration and surface hydrophobicity. But the carbon recovery effect was limited to the surface region. Alternatively, UV radial ion with thermal activation was applied for dielectric recovery of plasma damaged OSG low-k dielectrics. The combined UV/thermal process was found to be efficient in reducing-OH, physisorbed water, and C=O bonds. The dielectric constant was recovered within 5% of the pristine sample and the leakage current was also much reduced. Aging test in air showed that no moisture retake was observed, indicating the repaired film was stable. © 2008 Materials Research Society.

关键词： Low-k dielectric

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Effect of CH4 plasma treatment on O2 plasma ashed organosilicate low-k dielectrics

Effect of CH4 plasma treatment on O2 plasma ashed organosili...

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2007 MRS Spring Meeting

作者： Shi, Hualiang Bao, Junjing Liu, Junjun Huang, Huai Ho, Paul S. Goodner, Michael D. Moinpour, Mansour Kloster, Grant M. Laboratory for Interconnect and Packaging Microelectronics Research Center University of Texas at Austin 10100 Burnet Road Austin TX 78758 United States Logic Technology Development Intel Corporation Hillsboro OR 97124 United States

ISBN: (纸本)9781558999503

During an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused an increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, an additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O 2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region. © 2007 Materials Research Society.

关键词： Dielectric materials

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Mechanistic Study of Plasma Damage and CH4 Recovery of Low k Dielectric Surface

Mechanistic Study of Plasma Damage and CH4 Recovery of Low k...

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IEEE International Conference on Interconnect technology

作者： J. J. Bao H. L. Shi J. J. Liu H. Huang P.S. Ho M. D. Goodner M. Moinpour G. M. Kloster Laboratory for Interconnect and Packaging Microelectronics Research Center University of Texas Austin Austin TX USA Logic Technology Development Intel Corporation Hillsboro OR USA

A mechanistic study was performed to investigate plasma damage and CFL, recovery of porous carbon-doped oxide (CDO) low k surfaces. First the nature of damage was examined for different plasma treatments in a standard RIE chamber then followed by a study using a downstream hybrid plasma source with separate ions and atomic radicals to investigate their respective roles in the plasma process. Plasma damage was found to be a complicated phenomenon involving both chemical and physical effects, depending on chemical reactivity and the energy and mass of the plasma species. Moisture uptake after plasma damage was found to be a major reason to cause dielectric constant increase. The CFL plasma treatment was found to be promising in repairing oxygen ashing damages by formation of a carbon-rich polymer layer. However, sp 2 carbons on the top polymer layer seemed to limit the penetration of plasma CH 4 and thus full recovery of low k damage.

关键词： Dielectrics Plasma density Plasma chemistry Plasma sources Plasma materials processing Plasma applications Plasma measurements Plasma x-ray sources Optical films Plasma simulation

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65nm dual damascene patterning with triple layer approach

65nm dual damascene patterning with triple layer approach

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5th International Conference on Semiconductor technology, ISTC 2006

作者： Lin, Yi Shih Chen, Chao Jung Hao, Michael Xing, GuoQiang Logic Technology Development Center Semiconductor Manufacturing International Corporation

ISBN: (纸本)1566774373

Via-first-trench-last (VFTL) has become a popular approach to dual damascene (DD) patterning. PR remaining and PR poison issue are getting worse beyond 65nm dual damascene patterning. Tri-layer approach can provide etch stop layer protection, excellent substrate reflectivity control, PR remaining gain and PR poison reduction. LTO (low temperature oxide) and via fill material also became a good candidate for 193 nm anti-reflection layer and hard mask for trench etching. Topics such as performance in spin coating, trench lithography, plasma etching, will be discussed.

关键词： Nanotechnology

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New aspects of HCI test for ultra-short channel n-MOSFET devices

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Chinese Physics B 2006年第11期15卷 2742-2745页

作者：马晓华郝跃王剑屏曹艳荣陈海峰 Microelectronics Institute Xidian University Xi'an 710071 China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China Logic Technology Development Center SMIC Shanghai 201203 China

Hot carriers injection （HCI） tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices （75-90 nm）, which does not fit formal degradation power law well, will bring severe error in lifetime prediction. This phenomenon usually happens under high drain voltage （Vd） stress condition. A new model was presented to fit the degradation curve better. It was observed that the peak of the substrate current under low drain voltage stress cannot be found in ultra-short channel device. Devices with different channel lengths were studied under different Vd stresses in order to understand the relations between peak of substrate current （/sub） and channel length/stress voltage.

关键词： HCI n-MOSFET short channel

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A new failure mechanism of gate-grounded MOSFET ESD device in 90nm technology

A new failure mechanism of gate-grounded MOSFET ESD device i...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Zhang, Li-Fei Liao, Chin-Chang Liu, Wei Wong, Waisum Logic Technology and Development Center Semiconductor Manufacture International Corp. China

ISBN: (纸本)9780780393394

A new triggering phenomenon was observed on gate-grounded nMOS (ggnMOS) ESD device in 90nm technology. The trigger voltage has been measured at the value as low as 6V. However, the low triggering voltage does not result in high ESD performance as conventional theory suggested. The experimental data and simulation results have shown that this is due to the dislocation of the largest electric field from drain/junction region to the edge of LDD/pocket region. Therefore heating in the smaller LDD/pocket junction causes the early burn out. It is clarified that lower trigger voltage does not always mean to higher ESD endurance.

关键词： MOSFET devices

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Expression reduction systems and extensions: An overview

Lecture Notes in Computer Science (including subseries Lectu...

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Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) 2005年 3838 LNCS卷 496-553页

作者： Dauert, John Kesner, Delia Khasidashvili, Zurab School of Computing Sciences University of East Anglia Norwich United Kingdom PPS CNRS Université Paris 7 France Logic and Validation Technology Design Technology Division Intel Development Center Haifa Israel

ISBN: (纸本)354030911X

Expression Reduction Systems is a formalism for higherorder rewriting, extending Term Rewriting Systems and the lambdacalculus. Here we give an overview of results in the literature concerning ERSs. We review confluence, normalization and perpetuality results for orthogonal ERSs. Some of these results are extended to orthogonal conditional ERSs. Further, ERSs with patterns are introduced and their confluence is discussed. Finally, higher-order rewriting is translated into equational first-order rewriting. The technique develops an isomorphic model of ERSs with variable names, based on de Bruijn indices. © Springer-Verlag Berlin Heidelberg 2005.

关键词： Artificial intelligence

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A New Failure Mechanism of Gate-grounded MOSFET ESD Device in 9Onm technology

A New Failure Mechanism of Gate-grounded MOSFET ESD Device i...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Li-Fei Zhang Chin-Chang Liao Wei Liu Waisum Wong Logic Technology and Development Center Semiconductor Manufacturing International Corporation China

ISBN: (纸本)0780393392

关键词： Failure analysis MOSFET circuits Electrostatic discharge Testing MOS devices CMOS technology Turning Optimization methods Threshold voltage Voltage measurement

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