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Alleviation of subthreshold swing and short-channel effect in buried-channel m.s.ETs: The counter-doped surface-channel m.s.ET structure

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第11期79卷 43-50页

作者： Enda, T shigyo, N ULSI Research Laboratory Toshiba Corporation Kawasaki Japan 210 Received the B.S. and M.S. degrees in physics from Tokyo Metropolitan University in 1990 and 1992 respectively. In 1992 he joined the Toshiba Corporation. He has been engaged in the development of semiconductor device simulators and in research on device physics. He currently belongs to the Sixth Department of the ULSI Research Laboratory. He is a member of the Physical Society of Japan and the Japan Society of Applied Physics. Received the B.S. degree from Ghiba University in 197.8 and the M.S. degree from Tohoku University in 1980. In 1980 he joined Toshiba Corporation. He has been engaged in research on semiconductor device simulation and device physics. He is a senior researcher in the Sixth Department of the ULSI Research Laboratory. He holds the Ph.D. degree. He is a Senior Member of the IEEE. In 1983 he was awarded a Science Encouragement Award.

One of the important issues for the realization of deep, submicrometer Cm.s.is the choice between a buried channel or a surface channel for pm.s. Conventionally, buried-channel devices have been considered difficult to miniaturize and operate at low voltage. This is because they have a distinct short-channel effect and a large s-swing (subthreshold swing). However, the conventional analysis considers only the case in which the buried layer is deep. The junction depth is reduced on miniaturization, but there has not been sufficient analysis for the case of a shallow buried layer. Therefore, we have analyzed by simulation the way in which the buried-channel s-swing and short-channel effect depend on the depth of the buried layer and the source/drain junctions. We have found that if the buried layer is shallow enough for complete depletion, the s-swing becom.s.smaller than that for a surface channel and the subthreshold characteristics become sharper. In other words, we have shown for the first time that the optimized structure for a minimum.s.swing is not a surface channel but a buried channel. This structure is called CDsC (counter-doped surface-channel). It is also demonstrated that the short-channel effect can be suppressed better than in a surface channel if the source/drain is shallower than the buried layer. Therefore, CDsC is prom.s.ng for deep, submicrometer pm.s.

关键词： CmOs submicrometer device buried channel subthreshold swing short-channel effect

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Enhanced nitridation of silicon at low temperature by ultraviolet irradiation

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第2期79卷 78-85页

作者： Ishikawa, Y Tamagawa, T Nippon Institute of Technology Saitama Japan 345 Received his B.S. M.S. and Ph.D. degrees from Keio University in 1979 1981 and 1984 respectively. He became a Research Associate Lecturer and Associate Professor at Nippon Institute of Technology in 1984 1986 and 1992 respectively. He has been involved in research on impurity diffusion in Si low-temperature oxidation and nitridation of Si under UV irradiation. He is a member of the Japanese Society of Applied Physics and the Japanese Surface Science Society. Received his B.S. and M.S. degrees from Nippon Institute of Technology in 1992 and 1994 respectively. He joined Advantest Co. in 1994. As a student at Nippon Institute of Technology he was involved in the study of UV enhanced low-temperature nitridation of Si.

A method to enhance nitridation of silicon at low temperature by ultraviolet irradiation is proposed and the nitridation mechanism by this method is discussed. The nitridation of silicon is carried out by irradiating an ultraviolet beam from a low-pressure mercury lamp on the silicon substrate covered with a thin layer of ammonia. In this method, the attenuation of the ultraviolet beam is small and ammonia is decomposed effectively on the silicon surface. Asa result, silicon nitridation is accomplished at a temperature lower by 300 degrees C than in the conventional thermal decomposition method. The nitride film contained a small amount of free oxygen, which is the result from the natural oxide film on the silicon surface and is not introduced during the nitridation process. The silicon nitridation progresses by the diffusion of the nitriding species through the nitride film and the reaction between the nitriding species and silicon on the silicon surface. Both diffusion and reaction are enhanced by ultraviolet irradiation. The active species caused by the decomposition of ammonia by ultraviolet irradiation play an important role in the enhancement of the nitridation. At the same time, the effect of surface excitation by ultraviolet irradiation is not negligible.

关键词： silicon direct nitridation ultraviolet beam low-temperature process

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Bulk-type domain reversal grating of LiTaO3 crystal fabricated by direct electric field

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第2期79卷 70-77页

作者： sato, m Ohashi, m Abedin, Ks Takyu, C Ito, H Member Research Institute of Electrical Communication Tohoku University Sendai Japan 980–77 Received his B.S. degree from Yamagota University in 1984 and his M.S. and Ph.D. degrees from Tohoku University in 1986 and 1994 respectively. He joined Hitachi Co. in 1986. He became a Research Associate at Ishinomaki Senshu University in 1989 and a Research Associate at Tohoku University in 1993. He has been involved in research on nonlinear optics and optical measurement. He is a member of the Japanese Society of Applied Physics. Nonmember Received his B.S. degree from Kanazawa University in 1992 and his M.S. degree from Tohoku University in 1994. At present he is enrolled in the Ph.D. program at Tohoku University. He has been involved in research on nonlinear optical effect of ferroelectrical material. He is a member of the Japanese Society of Applied Physics. Received his B.S. from Bangladesh University of Engineering and Technology (BUET) in 1988 and became an Assistant Professor at the same institute. He received his M.S. degree from Yamagata University in 1993. He is currently enrolled in the Ph.D. program at Tohoku University. He has been involved in research on nonlinear optical crystals doped with rare earth metals semiconductor lasers and optical fibers. He is a member of the Japanese Society of Applied Physics. Graduated from Konahama Marine High School in 1969 and became a Research Technician at Tohoku University in the same year. He has been involved in research on laser measurement and the processes of semiconductors and dielectric material. Received his B.S. and Ph.D. degrees from Tohoku University in 1966 and 1972 respectively. At present he is a Professor at Tohoku University. He was invited to Stanford University during 1975–1976. He has been involved in research on laser and nonlinear optics integrated optics and semiconductor lasers. He received the Yonezawa Award in 1971 and Manuscript Award in 1989. He is a member of the Japanese Society of Applied Physics IEEE and OSA.

Bulk-type domain reversal gratings of LiTaO3 crystal were fabricated at room temperature by the direct electric field method, The nonlinear optical. property of the crystal was evaluated by quasi-phase matching. The period of the bulk-type domain reversal gratings on an LiTaO3 substrate was 7.5 mu m and the domain reversal extended to the entire substrate thickness of 500 mu m. The experimental normalization efficiency was 0.46%/W . cm in carder quasi-phase matching and was close to the theoretical value (0.48%/W . cm). This result indicates that high-efficiency nonlinear interaction could be achieved by using the bulk-type domain reversal grating, The bulk-type domain reversal grating of nonlinear optical crystal such as LiTaO3 is expected to be useful for compact nonlinear optical devices and integrated laser sources.

关键词： bulk-type domain reversal grating electrical field-induced polarization quasi-phase matching

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Dependence of plasma parameters on electric potential of electrode in microwave plasma

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第5期79卷 58-65页

作者： Kato, I matsushita, T Yam.s.ita, m School of Science and Engineering Waseda University Tokyo Japan 169 Graduated in 1967 from the Department of Electronic Communications Waseda University where he received his Dr. of Eng. degree in 1973. In 1973 he joined the faculty of Waseda University where he was promoted to Associate Professor in 1978. From 1979 to 1981 he was a Visiting Professor at the University of Manitoba. He has supervised research and participated in joint research with the Canadian National Research Council. In 1983 he was promoted to Professor. He has been engaged in research on photonic engineering laser engineering electron physics metrology photonic materials plasma electronics optical and quantum electronics and semiconductor thin-film techniques. He is a member of the Institute of Electrical Engineers of Japan the Applied Physics Society the Institute of Television Engineering the Japan Vacuum Society and IEEE. Graduated in 1993 from the Department of Electronic Communications Waseda University where he received his M.S. degree in 1995. He has been engaged in research on microwave plasma CVD. At present he is with Hitachi Central Research Laboratory Storage Research Department. He is a member of the Applied Physics Society. Graduated in 1994 from the Department of Electronic Communications Waseda University where he is working toward his M.S. degree. He has been engaged in research on microwave plasma CVD. He is a member of the Applied Physics Society.

The authors have been studying the double-tubed coaxial line-type microwave plasma chemical vapor deposition (mPCVD). The discharge tube of the present mPCVD is a dual-tube structure made of a fused quartz outer discharge tube and stainless steel inner tube. The authors have discovered that the ion bombardment energy can be controlled without varying the electron densities and temperature by changing the potential of the substrate placed in a spatial after-glow plasma. In the present research, it is found that the ion bombardment energy can also be controlled by changing the potential of the inner tube placed in the discharge plasma. However, the electron densities and temperature have exhibited a tendency different from the one when the substrate potential is varied. Hence, a theoretical calculation has been carried out on the electron densities and temperature based on maxwell-Boltmann distribution. It is found that a different tendency can be explained from the fact that the electrons successively vanish on the deposition chamber wall from the higher-energy side as the plasma spatial potential is reduced from about 13 V to 4 V so that the electron velocity distribution is modified.

关键词： substrate potential inner tube potential ion collision plasma parameters maxwell-Boltzmann distribution

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Optimum design technique for optoelectronic devices using simulated annealing

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第1期79卷 22-32页

作者： Hara, K Iwamoto, T Kyuma, K Member Semiconductor Research Laboratory Mitsubishi Electric Corporation Amagasaki Japan 661 Received his B.S. and M.S. degrees in Electronics Engineering from Osaka University in 1986 and 1988 respectively. He joined Mitsubishi Electric Corporation in 1988. At present he is with the Neural & Parallel Processing Technology Development Center. He is involved in research on optical switches optical device simulators artificial retina chip and digital neuro-chip. He is a member of the Society of Applied Physics. Nonmember Received his B.S. and M.S. degrees in Physics and Methodology from Kyoto University in 1985 and 1987 respectively. He completed the required course work in the doctoral program of the same university in 1990. He joined Mitsubishi Electric Corporation in 1990. At present he is with the Neural & Parallel Processing Technology Development Center. He is involved in research on information processing using nonlinear motive power and optimization. He is a member of the Japan Society of Physics. Received his B.S. and Ph.D. degrees in Electronics Engineering from Tokyo Institute of Technology in 1972 and 1977 respectively. He joined Mitsubishi Electric Corporation in 1977. At present he is the head of the Neural & Parallel Processing Technology Development Center. From 1985 to 1986 he was an invited scholar at California Institute of Technology in the United States. He is involved in research on neural theory optical neural networks artificial retina chip VLSI neuro-chips and optical fiber sensors. He is a member of IEEE OSA International Neural Network Society Society of Applied Physics and Society of Instrumentation and Control.

A new procedure for the optimum design of optoelectronic devices is explained in this paper and an automatic search is made simultaneously for the structure satisfying various demands. The feature of this procedure is in the introduction of cost by which the quantitative evaluation of the structure becom.s.possible and the global search for the required structure by simulated annealing can be carried out. First, the definition of cost and details of the optimization procedure are clarified. In optimization, in addition to convergence to the minimum point of the cost function (the optimum configuration from theoretical viewpoint), the convergence also is possible in structures with great tolerance to fabrication errors (neighborhood cost (NC) and finite temperature annealing (FTA) methods). Next, these three proposed methods are used in the design of a pnpn differential optical switch and the effectiveness of the methods is verified. The method of cost expression, the relation between annealing parameters, and convergence are investigated. It is shown that cost expression with large degree of freedom improves the search for high-performance structures and the initial temperature of annealing or the fixed temperature of FTA method is the important parameter which sets up the probability of acceptance. Further, it is shown that the convergence cost is inversely proportional to the time spent in annealing. These results are useful guidelines in the optimum design of arbitrary optoelectronic devices.

关键词： optoelectronic devices cost function device design optimization convergence

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Application of screen-printed rare earth oxide protective film to alternating-current plasma display panels

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第8期79卷 31-41页

作者： Koiwa, I Kanehara, T mita, J Oki Electric Industry Co. Ltd. Microsystem Technology Laboratory Hachioji Japan 193 Received his B.S. and M.S. degrees in 1982 and 1984 respectively and his Ph.D. degree in Applied Chemistry in 1987 all from Waseda University. From 1986 to 1988 he was a Research Associate in Applied Chemistry at Waseda University. He worked on electrodeless cobalt alloy film for perpendicular magnetic recording media. He joined Oki Electric Industry Corporation Tokyo Japan in 1988 where he has been engaged in research on plasma display panels (PDP) especially for cathode material for dc-PDP and protective layer for ac-PDP. At present he is working on screen-printed MgO protective layer for ac-PDP. Received his B.S. and M.S. degrees from Hiroshima University in 1989 and 1991 respectively. In 1991 he joined Oki Electric Industry Corporation Tokyo Japan where he has been engaged in research on plasma display panels. His research work is on ac-type color plasma display panels especially panel structure. Received his M.S. degree from Tottori University in 1981. He joined Oki Electric Industry Corporation Tokyo Japan in 1981 where he has been engaged in research on display devices. He is currently a group leader at Microsystem Technology Laboratories of Research and Development Group and his present work is in the area of ferroelectric thin films. He is a member of the Society for Information Display and the Japanese Society of Applied Physics.

screen-printed protective film of rare earth oxides (La2O3, Gd2O3, Dy2O3, Y2O3, and Yb2O3) was applied to ac-plasma display panels. screen-printed rare earth protective films have higher luminous efficiencies than a sputtered mgO protective film. However, it is difficult to obtain a low firing voltage (V-f) from.s.reen-printed earth oxide protective films. Only the La2O3 protective film has a lower firing voltage than the sputtered mgO protective film. Gd2O3 has the lowest sustaining voltage (V-s) which is 54 V lower than that of the sputtered mgO protective film. since rare earth oxide powders with high crystallinity exhibit superior discharge characteristics, it is necessary to improve the crystallinity of the powders. In order to obtain a high luminous efficiency, it is necessary to have a low discharge current. Both Y2O3 and La2O3 have a high current-limiting effect. The current-limiting effect is related closely to cell resistance. since Dy2O3 has a low cell resistance, its current-limiting effect is low. Gd2O3 has the highest luminance per unit discharge current. If it is possible to reduce the discharge current of Gd2O3 further, it is possible to obtain a higher luminouss efficiency. Every screen-printed rare earth oxide film has an excellent protective effect. However, from the viewpoint of low discharge voltage and high luminous efficiency, La2O3 and Gd2O3 are superior to all other rare earth oxides due to their low discharge voltage and high luminous efficiency.

关键词： rare earth oxide ac-plasma display panel protective film screen printing

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method of detecting a specific ion by means of crown ethers

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第3期79卷 82-91页

作者： Hirakawa, H Member Faculty of Engineering Kagoshima University Kagoshima Japan 890 Received his B.S. degree from Fukuoka Institute of Technology and became an engineer in the Aviation Department of the Ministry of Transportation. He received his M.S. degree from Kagoshima University in 1972 and his Ph.D. degree later. He became a Research Associate and an Associate Professor in the same university in 1972 and 1990 respectively. He has been involved in the measurement and application of sedimentation potentials in electrolytic solutions. He is a member of the Japanese Society of Electrochemistry Japanese Society of Applied Physics and Japanese Chemical Society.

To replace the conventional ion-sensitive field-effect transistor (IsFET) ion sensor, an ion-sensing method using crown ether was developed. In this method, the alkaline metal ions (Na+ and K+ ions) were detected by the ac potential difference. Crown ether shows selectivity toward alkaline metal ions, forming complexes. To investigate the selective characteristics of crown ethers using the ac potential difference, three types of crown ethers (18C6, 15C5, and 12C4) were used. The solvents used were water, methyl alcohol, acetone, propylene-carbonate (PC), and dimethyl-formamide (DmF). specifically, chlorides (NaCl, KCl, and CsCl) were dissolved in the solvent containing crown ether and the sedimentation potential was measured using a sedimentation-potential measurement system. When 18C6 was used, the highest sedimentation potential of KCI was observed if PC was chosen for the solvent. When 15C5 was used, the highest sedimentation potential of NaCl was observed if methyl alcohol was used for the solvent. It was confirmed that in order to distinguish K+ and Na+ ions from other ions, PC containing 18C6 and methyl alcohol containing 15C5 should be used, respectively.

关键词： crown ether K+ ion Na+ ion sedimentation potential complex

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Reliability simulation of AC hot carrier degradation for deep sub-micron m.s.ETs

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第11期79卷 19-27页

作者： shimizu, s Tanizawa, m Kusunoki, s Inuishi, m miyoshi, H ULSI Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami Hyogo Japan 664 Received the B.S. and M.S. degrees in electronic engineering from Kobe University Hyogo Japan in 1988 and 1990 respectively. In 1990 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation where he has been engaged in research on the structural design of submicron CMOS such as MOSFETs silicidation and reliability including investigations of the hot carrier effect in the ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received the B.S. and M.S. degrees in electronic engineering from Kyoto University Kyoto Japan in 1983 and 1985 respectively. From 1985 to 1988 he was with Sharp Corporation Nara Japan. In 1988 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation Hyogo Japan where he has been engaged in semiconductor device modeling for circuit simulation in ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received the B.S. degree in Physics and the M.S. degree in Information Systems Science from Kyushu University in 1978 and 1982 respectively. He joined the LSI Research and Developmept Laboratory Mitsubishi Electric Corporation Hyogo Japan in 1982. From 1982 to 1988 he was engaged in research on SOI device technology and three-dimensional ICs and from 1988 to 1995 he was engaged in research on the structural design of scaled MOS transistors. He is presently engaged in the research on the structural design of power devices in the ULSI Laboratory. He is a member of the Japan Society of Applied Physics. Received a B.S. in materials science and engineering from Osaka University Japan in 1976 and a Ph.D. from Northwestern University Evanston Illinois in 1981. In 1981 he joined LSI Research and Development Laboratory Mitsubishi Electric Corporation Hyogo Japan. Since then he has been engaged in research on process and device technologies for 64K and 1M DRAMs and on submicron CMOS isolation ret

High performance under low supply voltage is required for ULsIs in combination with the higher packing density that results from.s.aling down to the deep sub-micron region. For this requirement, the conventional method, using the DC hot carrier lifetime of m.s.ETs as measured by DC stress, overestimates the degradation caused by real circuit operation. As a result, the improvement of m.s.ET performance is limited by attempting to satisfy the overestimated hot carrier criteria under DC stress. Therefore, it is strongly desired that the reliability simulation estimate accurately hot carrier degradation in real circuit operation. We have found that the degradation rate depends on the stress conditions and can be expressed in terms of the difference between the gate and drain voltages. Hence, in this paper, we propose a new method of modeling and calculation of hot carrier degradation that incorporates this dependence and will demonstrate improved accuracy in predicting degradation and life time for both AC and DC bias conditions. We also propose a new duty ratio extraction method that can be used to predict the lifetime for hot carrier degradation under actual circuit operation.

关键词： hot carrier degradation AC stress AC lifetime duty factor circuit simulation

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An insulated gate bipolar transistor with high surge endurance

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第1期79卷 64-74页

作者： Tokura, N Okabe, N Hara, K Member R & D Department Nippondenso Company Ltd. Kariya Japan 448 Received his B.S. and M.S. degrees from Shizuoka University in 1976 and 1978 respectively. He joined Nippondenso Co. in 1978. He was involved in the research and development of electronics equipment for automobiles. Since 1986 he has been involved in research and development of MOS power devices. He is a Senior Researcher in the R & D Department. He is a member of the Japan Society of Applied Physics and the Institute of Electrical Engineers of Japan. Nonmember Received his B.S. and M.S. degrees from Nagoya University in 1980 and 1982 respectively and in 1982 joined Nippondenso. He was involved in the research and development of semiconductor lasers. At present he is involved in research and development of Si semiconductor power devices. He is with the IC Technology Department. He is a member of the Institute of Electrical Engineers of Japan. Received his B.S. and Ph.D. degrees from Nagoya University in 1969 and 1974 respectively. He joined Nippondenso Co. in 1969. He is a Senior Chief Research Scientist in the Basic Research Laboratory. He has been involved in research on semiconductor surfaces interface physics and new types of semiconductor devices. He is a member of The Institute of Electrical Engineers of Japan The Japan Society of Applied Physics The Surface Science Society of Japan and The Japan Institute of Metals.

The relationship between the device property under drain-source breakdown and device structure parameters of insulated gate bipolar transistors was simulated. Then the following facts were revealed: 1 the impurity concentration in the n(-) drain layer and the layer thickness determine the breakdown mode. One such mode is the avalanche-suppressed punch-through mode proposed by the authors, where the depletion layer in the n(-) drain layer reaches the p* drain substrate and breakdown is caused by the hole injection from the p(+) drain substrate to the n(-) drain layer. Another mode is the nonpunch-through mode, where avalanche takes place in the neighborhood of the junction between the p body layer and n drain layer, causing breakdown;2 the breakdown energy spreads more and the hot carrier concentration near the device surface is lower in the avalanche-suppressed insulated gate bipolar transistor than in the nonpunch-through insulated gate bipolar transistor. As a result, the breakdown resistance of the former transistor is higher than that of the latter transistor;and 3 it was found that the breakdown voltage is more stable against the changes in the drain current and temperature in the former transistor than in the latter transistor. It was found also that the former transistor has a higher surge energy endurance than the latter transistor.

关键词： insulated gate bipolar transistor surge breakdown punch-through avalanche simulation

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Finite element analysis of plane wave diffraction from anisotropic dielectric gratings

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ELECTRONICs AND COmmUNICATIONs IN JAPAN PART II-ELECTRONICs 1996年第1期79卷 1-10页

作者： Ohkawa, Y Tsuji, Y Koshiba, m Faculty of Engineering Hokkaido University Sapporo Japan 060 Received his B.S. and M.S. degrees in 1991 and 1993 respectively from the Department of Electronic Engineering Hokkaido University where he is currently in the doctoral program. He has been engaged in research on opto- and wave electronics. Currently in the doctoral program at Hokkaido University (Department of Electronic Engineering) where he received his B.S. and M.S. degrees in 1991 and 1993 respectively. He has been engaged in research on quantum wave phenomena in semiconductor nanostructures such as quantum wires and quantum dots. Received his B.S. M.S. and Ph.D. degrees in 1971 1973 and 1976 respectively from the Department of Electronic Engineering Hokkaido University. In 1976 he became a Lecturer at Kitami Institute of Technology where he was promoted to an Associate Professor in 1977. In 1979 he became an Associate Professor of the Department of Electronic Engineering Hokkaido University where he was promoted to Professor in 1987. He has been engaged in research on opto- and wave electronics. In 1987 he received a Best Paper Award. He is the author ofFundamentals of Finite Element Method for Opto- and Wave Electronics(Morikita)Optical Waveguide Analysis(Asakura)Optical Waveguide Analysis (McGraw-Hill) andOptical Waveguide Theory by the Finite-Element Method(KTK Scientific Publishers/Kluwer Academic Publishers). He is the co-author of one book and jointly authored six others. He is a member of the Institute of Television Engineers of Japan the Institute of Electrical Engineers of Japan the Japan Society for Simulation Technology the Japan Society for Computational Methods in Engineering and the Japan Society of Applied Electromagnetics. He is also an IEEE Senior Member.

In this paper, the formulation of the analysis based on the finite element method is presented for the first time for an anisotropic dielectric grating. By this analysis method, the diffraction characteristics of a plane wave by an anisotropic dielectric grating with an arbitrary shape can be computed easily. The finite element method is applied to the region corresponding to one period containing an anisotropic dielectric grating. The analytical relationships are applied to the boundaries on the incident and transmitted sides while the periodic boundary condition is applied to all other boundaries. specifically, an index modulated grating and a groove grating are chosen for the analysis of the diffraction characteristics when the TE and Tm waves are coupled. From the comparison with the analysis results by the coupled-mode theory and the spatial harmonic expansion method, the validity of the present method is confirmed.

关键词： diffraction grating anisotropic medium finite element method isoparametric elements Floquet's theorem

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