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15.13%Sr-doped CsPbI_(3) quantum dots with near-unity quantum yield via surface ligand compensation

Nano Research 2025年第4期18卷 534-543页

作者： Yi Peng Wanzhong Gu Yuhui Dong Yucong Ji Danni Yan Ziyun Lin Li Zhang Yousheng Zou Haibo Zeng MIIT Key Laboratory of Advanced Display Materials and Devices Jiangsu Province Engineering Research Center of Quantum Dot DisplaySchool of Materials Science and EngineeringInstitute of Optoelectronics and NanomaterialsNanjing University of Science and TechnologyNanjing 210094China

Sr-doping of perovskite quantum dots(QDs)is a promising strategy to reduce Pb content and improve optical performance and ***,excessive Sr introduces new defects that degrade photoluminescence quantum yield(PLQY).Therefore,it is a challenge to balance high optical performance with high doping concentration for the preparation of environmentally friendly perovskite *** this study,we report the highest Sr/Pb ratios Sr-doped CsPbI_(3) QDs(15.13%)with a near-unity *** balance between high PLQY and high Sr-doping rate is achieved through the introduction of oleylammonium iodide(OAmI)ligand compensation during the anti-solvent purification process,which can form an iodine-enriched environment and effectively passivates the surface defects of QDs caused by excessive ***,the Sr-doped CsPbI_(3) QDs exhibit superior stability in environments with high temperature and humidity or direct contact with *** strategy provides a novel approach for the preparation of lead-less and lead-free QDs with superior optical performance and stability,offering a potential solution for environmentally friendly applications.

关键词： CsPbI_(3)quantum dots Sr-doping ligand compensation photoluminescence quantum yield environmental stability

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Enhancing performance of fullerene-based organic electrochemical transistors via side-chain engineering

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Nano Research 2025年第2期18卷 905-912页

作者： Wenxin Fang Zijie Li Chengdong Wang Xiaowei Zhao Junyu Li Gang Ye Fengwei Huo Li Qiu Yanxi Zhang Wei Huang Institute of Flexible Electronics(IFE Future Technologies)Xiamen UniversityXiamen 361005China Yunnan Key Laboratory of Electromagnetic Materials and Devices National Center for International Research on Photoelectric and Energy MaterialsSchool of Materials and EnergyYunnan UniversityKunming 650091China Sinopec Shanghai Research Institute of Petrochemical Technology Shanghai 201028China Key Laboratory for the Green Preparation and Application of Functional Materials Hubei Key Laboratory of Polymer MaterialsSchool of Materials Science and EngineeringHubei UniversityWuhan 430062China Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)Nanjing Tech University(NanjingTech)Nanjing 211800China Frontiers Science Center for Flexible Electronics MIIT Key Laboratory of Flexible Electronics(KLoFE)Northwestern Polytechnical UniversityXi'an 710072China

The performance of organic electrochemical transistors(OECTs)relies on the interaction between organic semiconductors and ***,hydrophilic ethylene glycol(EG)side chains are incorporated into organic semiconductors to improve the channel’s capacity to absorb ***,the EG substituted organic semiconductors tend to swell when immersed in aqueous electrolytes and exhibit microstructural changes induced by dopant *** our research,we introduce an alkyl spacer to create distance between the fullerene and EG *** approach is designed to reduce the negative effects of swelling and balance the ion and electron *** conducted an analysis of OECTs using four fullerene derivatives:no alkyl spacer,butyl,hexyl,and octyl *** OECTs based on fullerene derivatives with butyl and hexyl spacers exhibit enhanced transconductance(g_(m)=11.8 and 19.4 mS)compared to the ones without alkyl *** has also been observed that the butyl and hexyl spacers lead to a more than tenfold increase in volumetric *** increasing the alkyl spacer(octyl group)leads to no transistor *** study uncovers the relationship between alkyl spacers and the performance of OECTs based on fullerene *** will serve as a guideline for designing n-type small molecules for ***,we showcased the potential of utilizing OECTs based on these fullerene derivatives in cation sensing,which is promising for developing sweat sensors.

关键词： organic electrochemical transistors fullerene derivatives ethylene glycol side chains ion and electron conduction

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In-situ derive hierarchical Ti_(3)C_(2)@C@ZnO heterointerface for electromagnetic absorption enhancement

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Nano Research 2025年第2期18卷 477-487页

作者： Jianxi Liu Haowen Luo Guohong Wang Sirui Han Kai Li Yunyi Zhang Xingmin Liu Fang Ye Yadong Xu State Key Laboratory of Solidification Processing Center of Advanced Lubrication and Seal MaterialsNorthwestern Polytechnical UniversityXi'an 710072China MIIT Key Laboratory of Radiation Detection Materials and Devices Northwestern Polytechnical UniversityXi'an 710072China Shanxi Semisic Crystal Co. Ltd.Taiyuan 030062China Dipartimento di Ingegneria Meccanica-Settore Materiali University of PadovaPadova 35122Italy

Heterointerfaces formed by the intimate connection of different materials with electromagnetic losses are expected to achieve stronger electromagnetic(EM)***,constructing composites with heterointerfaces still faces great challenges in facile preparation process,optimized impedance matching,high reflection loss(RL),and ultrathin matching *** this work,we develop ZIF-8 functionalized MXene to produce hierarchical Ti_(3)C_(2)@C@ZnO composites with heterointerface to advance EM absorption *** with polydopamine(PDA),few-layer Ti_(3)C_(2)T_(x) MXene sheets enable adsorption of Zn^(2+)metal ions on Ti3C2Tx@PDA by electrostatic interaction for in-situ growth of ***_(3)C_(2)/C/ZnO heterointerface were obtained after heat treatment of Ti_(3)C_(2)T_(x)@PDA@ZIF-8 nanocomposites at various *** Ti_(3)C_(2)/C/ZnO-600℃ with 1.15 mm thickness have a RL of−50.241 dB and an effective absorption bandwidth of 3.50 ***-depth studies on the electromagnetic loss mechanisms reveal that Ti3C2,carbon,and ZnO in nanocomposites generate multiple interfacial polarization losses beyond partial conductivity losses caused by Ti_(3)C_(2) and *** vacancy defects in ZnO form dipole losses with *** work not only provides a simple and effective concept for preparing MXene@MOFs heterogeneous composites as an ultrathin and strong electromagnetic wave absorber,but also offers a vital guideline to fabricate various metal oxides derived from the MXene and metal-organic frameworks(MOFs)precursors.

关键词： MXene metal-organic frameworks(MOFs)-derived carbon electromagnetic absorption heterostructure

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Symmetric high-performance transport in n- and p-type HfSnS3 nanowire gate-all-around transistors toward sub-5-nm electronics

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Physical Review Applied 2025年第4期23卷 044002-044002页

作者： Chuyao Chen Jialin Yang Hengze Qu Wenhan Zhou Tingting Guo Weicong Sun Xiufeng Song MIIT Key Laboratory of Advanced Display Materials & Devices Jiangsu Engineering Research Center for Quantum Dot Display College of Materials Science and Engineering Institute of Optoelectronics & Nanomaterials Nanjing University of Science and Technology Nanjing Jiangsu 210094 China

Gate-all-around (GAA) configurations with superior electrostatics and scaling potential are recognized as an ultimate solution for the post-Moore complementary metal oxide semiconductor (CMOS) circuits. In this case, nanowires (NWs) with a natural dangling-bond-free surface are one of the most promising channel candidates for the ultrascaled GAA field-effect transistors (FETs). Herein, we propose that the HfSnS3 NWs are very attractive channel materials for sub-5-nm GAA FETs, exhibiting excellent n- and p-type symmetric behaviors. In particular, holding ultrahigh phonon-limited carrier mobilities, the sub-5-nm HfSnS3 NW n- and p-FETs far surpass the International Technology Roadmap for Semiconductors high-performance requirements. The on-current can exceed 1000 µA μm−1 even for 3-nm nodes while maintaining an excellent n- and p-type performance ratio close to 1. Furthermore, we reveal that the superior subthreshold swing control capability of the HfSnS3 NW p-FETs is attributed to the px-orbital-induced heavy-hole effective mass. This advantage can be attractive, especially for the further scaling of CMOS technology. Meanwhile, the power and delay of the HfSnS3 NW FETs are assessed to ensure their fast-switching and energy-efficient behaviors. Our results suggest that HfSnS3 NW FETs with superior and symmetric transport performance possess promising prospects for future sub-5-nm GAA complementary transistors.

关键词： III-V semiconductors

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Quantum dots enhanced stability of in-situ fabricated perovskite nanocrystals based light-emitting diodes:Electrical field distribution effects

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Fundamental Research 2025年第1期5卷 347-353页

作者： Xulan Xue Menglin Li Zhenjie Liu Chenhui Wang Jincheng Xu Shuangpeng Wang Hanzhuang Zhang Haizheng Zhong Wenyu Ji Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin UniversityChangchun 130012China MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices School of Materials Science&EngineeringBeijing Institute of TechnologyBeijing 100081China Institute of Applied Physics and Materials Engineering University of MacaoTaipa 999078China

With the development in fabricating efficient perovskite light emitting diodes(PeLEDs),improving the operating stability becomes an urgent *** we report quantum dot(QD)enhanced stability of PeLEDs by introducing CdSe/ZnS core-shell QDs in toluene anti-solvent during in-situ fabrication of FAPbBr3 perovskite nanocrystals(PNCs)*** comparison with PNC films with pristine toluene as the anti-solvent,the as-prepared FAPbBr3 PNC films with a QD monolayer on the surface exhibit improved photoluminescence quantum yield,enhanced photostability and better *** from these advantages,the peak luminance and the maximum external quantum efficiency of the PeLED containing QD monolayer are increased from 6807 cd/m^(2)to 86,670 cd/m^(2)and 2.4%to 7.1%,*** T50 lifetime under the initial luminance of 1021 cd/m^(2)approaches 83 *** on electrical field simulation and transient electroluminescence measurements,the enhanced stability can be mainly attributed to the electrical field redistribution induced by the QD *** work demonstrates that the combination of QDs and perovskites provides an effective strategy to address the operational stability of *** insights into electrical field distribution effect will make great impact on stability improvement of other perovskite based devices.

关键词： Perovskite nanocrystals Quantum dots Electrical field distribution Light-emitting diodes Operational stability

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Evaluation of chromatic uniformity in mini-LED displays based on a gray-level co-occurrence matrix and the discrete Fourier transform

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Optics Express 2025年第8期33卷 16938-16951页

作者： Chen, Fangqi Lin, Kechuang Li, Yakai Li, Panpan Li, Jinchai Huang, Kai Kang, Junyong Zhang, Rong Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices Ministry of Education Fujian Key Laboratory of Semiconductor Materials and Applications Department of Physics Xiamen University Fujian Xiamen361005 China San’an Optoelectronics Co. Ltd. Fujian Xiamen361005 China Future Display Institute of Xiamen Fujian Xiamen361005 China Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Jiangsu Nanjing210093 China

In the production of mini-light-emitting diodes (LEDs), chromatic discrepancies among chips have become a significant factor affecting display quality. The hybrid chip sorting method is commonly employed in mini-LED production to achieve efficient demura, but a comprehensive evaluation system is lacking. This study evaluates the chromatic uniformity of mini-LED arrays using a gray-level co-occurrence matrix (GLCM) and the discrete Fourier transform (DFT). A scientific evaluation system was established to assess the chromatic uniformity of displays. Data from 270 wafers were collected to construct a comprehensive mini-LED arrays database. Experimental results demonstrate that this evaluation system accurately assesses texture information within images, revealing chromatic differences in local details as well as overall uniformity and periodic variations. These analytical methods are expected to effectively support the optimization of binning processes, enhance demura efficiency, and provide a scientific basis for process improvement and quality control. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

关键词： Discrete Fourier transforms

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Low sintering shrinkage porous ceramics: Principles, progress, and perspectives

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Journal of advanced Ceramics 2025年第2期14卷 1-36页

作者： Jie Xu Yueqi Shao Xiaoying Feng Xiaoyan Zhang Hao Li Jinlong Yang Feng Gao State Key Laboratory of Solidification Processing MIIT Key Laboratory of Radiation Detection Materials and DevicesSchool of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’an 710072China Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083China State Key Lab of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China

Porous ceramics are lightweight materials with diverse pore structures and are widely applied in areas such as thermal insulation, sound absorption, filtration, catalysis, and energy storage. However, excessive shrinkage during the sintering process of porous ceramics leads to cracking and deterioration, posing significant challenges for achieving complex shapes. Despite its importance, the field of low sintering shrinkage porous ceramics has not received sufficient attention. This review systematically discusses the principles and progress in the development of low sintering shrinkage porous ceramics. First, we introduce the characteristics of various preparation methods, including partial sintering, particle-stabilized foaming, gel-casting, foam-gelcasting, and additive manufacturing (AM). We then explain three primary principles of low sintering shrinkage from the perspectives of the volume effect and mass transfer processes. This review focuses on the properties and applications of typical low sintering shrinkage ceramics such as mullite and alumina, particularly their mechanical properties and thermal conductivity as thermal insulation and ceramic cores. Finally, we summarize the current state and present future perspectives on low sintering shrinkage porous ceramics.

关键词： porous ceramics low sintering shrinkage volume expansion mass transfer process pore structure properties

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Excited-State Energy Manipulation Enables Single-Layer White Light-Emitting Diodes to Simulate the Solar Spectrum

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ACS Applied materials and Interfaces 2025年第19期17卷 28436-28446页

作者： Chen, Xinrui Xie, Feng-Ming Xiang, Hengyang Zhang, Kai Guo, Chiyu Bi, Chenghao Wang, Run Guo, Yashuang Wang, Yifei Nie, Jiazhuo Tang, Jian-Xin Chen, Zhuoying Lu, Ruifeng Zeng, Haibo MIIT Key Laboratory of Advanced Display Materials and Devices Jiangsu Engineering Research Center for Quantum Dot Display School of Materials Science and Engineering Institute of Optoelectronics & Nanomaterials Nanjing University of Science and Technology Jiangsu Nanjing210094 China Soochow University Jiangsu Suzhou215123 China Faculty of Innovation Engineering Macau University of Science and Technology Taipa999078 China Qingdao Innovation and Development Base Harbin Engineering University Qingdao266000 China ESPCI Paris PSL University Sorbonne Université CNRS UMR 8213 10 Rue Vauquelin ParisF-75005 France Department of Applied Physics School of Physics Nanjing University of Science and Technology Jiangsu Nanjing210094 China

White light-emitting diodes (WLEDs) have been widely researched and applied for their characteristics of energy savings and environmentally friendliness. However, the spectrum of WLEDs is quite different from that of natural sunlight, and long-term use can have an impact on both physiological and psychological health. Three strategies have been designed to address the issue of spectral defects by revealing the exciton energy transfer and distribution behavior between multiple excited states. Here, single emitting layer (SEL)-WLEDs are designed to simulate the solar spectrum, which exhibits excellent spectral stability at different operating voltages, demonstrating that exciton distribution can maintain dynamic balance. In addition, these devices can accurately replicate sunlight during different time periods, with a high color rendering index (CRI ∼ 90) and a nearly 90% coverage in the human comfort region. Meanwhile, the ultraviolet, deep blue, and near-infrared regions were reduced by 100%, 80%, and 90%, respectively. These results indicate that the strategies are expected to be used to promote the physical and mental health of those who work in environments far from natural light for a long time. © 2025 American Chemical Society.

关键词： Fluorescence

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Orange–red emissive organic–inorganic hybrid copper halide for white light-emitting diode application

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Optics Letters 2025年第8期50卷 2731-2734页

作者： Xie, Lingling Lv, Ning Wang, Xuelu Liu, Zhe Pi, Huihui Li, Xitao Yang, Henan Li, Siyi Ding, Cheng Huang, Dengming Mao, Pengcheng Lin, Zhengguo Chen, Bingkun Beijing Engineering Research Center of Mixed Reality and Advanced Display School of Optics and Photonics Beijing Institute of Technology Beijing100081 China BOE Technology Group Co. Ltd. Beijing100176 China Analysis & Testing Center Beijing Institute of Technology Beijing100081 China College of Chemistry and Materials Science Hebei Normal University Shijiazhuang050024 China The State Key Laboratory of Luminescent Materials and Devices Guangzhou510641 China

Organic–inorganic hybrid copper(I)-based metal halides (OIHCMHs) have emerged as promising alternatives to lead perovskites due to their exceptional optical properties. However, the lack of low-energy light-emitting compounds prohibits their further applications. Herein, we report an orange–red emissive (C19H18P)2Cu4Br6 with a zero-dimensional structure. The photoluminescence (PL) peak of (C19H18P)2Cu4Br6 locates at 640 nm with a PL quantum yield of 69.3%, and the large Stokes shift is 245 nm. Experimental analyses demonstrate the bright broadband orange–red light emission derived from the synergistic effect of metal-to-ligand charge transfer or halide-to-ligand charge transfer (MLCT/HLCT) excited state and cluster-centered (CC) excited state. Furthermore, (C19H18P)2Cu4Br6 can be used as phosphor for orange–red light-emitting didoes (LEDs), and by adding other blue- and cyan-emitting phosphors, a white LED with a high color rendering index over 94 is achieved. This work not only demonstrates material design strategies for preparing low-energy emissive OIHCMHs but also inspires the potential of low-dimensional metal halides in high quality white LED applications. © 2025 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

关键词： Copper compounds

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KCl acts as a flux to assist the growth of sub-millimeter-scale metallic 2D non-layered molybdenum dioxide

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Rare Metals 2025年第1期44卷 404-416页

作者： Li-Ying Deng Qing Zhang Wang-Yang Li Xiao-Yuan Ye Yi-Fan Zhao Shen-Zhong Chen Yu-Lan Wang Xing-Hui Wang Hui-Peng Chen Zhi-Yang Yu Qun Yan Shu-Ying Cheng Tai-Liang Guo Wen-Ping Hu Feng Ding Jie Sun National and Local United Engineering Laboratory of Flat Panel Display Technology College of Physics and Information EngineeringFuzhou UniversityFuzhou350100China Fujian Key Laboratory of Agricultural Information Sensing Technology College of Mechanical and Electrical EngineeringFujian Agriculture and Forestry UniversityFuzhou350002China Key Laboratory of Organic Integrated Circuit Department of ChemistrySchool of ScienceMinistry of Education and Tianjin Key Laboratory of Molecular Optoelectronic SciencesTianjin UniversityTianjin300072China Collaborative Innovation Center of Chemical Science and Engineering(Tianjin) Tianjin300072China College of Physics and Information Engineering Institute of Micro-Nano Devices and Solar CellsFuzhou UniversityFuzhou350108China State Key Laboratory of Photocatalysis on Energy and Environment College of ChemistryFuzhou UniversityFuzhou350116China Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518000China

Two-dimensional(2D)metal oxides(2DMOs),such as MoO_(2),have made impressive strides in recent years,and their applicability in a number of fields such as electronic devices,optoelectronic devices and lasers has been ***,2DMOs present challenges in their synthesis using conventional methods due to their non-van der Waals *** report that KCl acts as a flux to prepare large-area 2DMOs with sub-millimeter *** systematically investigate the effects of temperature,homogeneous time and cooling rate on the products in the flux method,demonstrating that in this reaction a saturated homogenous solution is obtained upon the melting of the salt and ***,the cooling rate was adjusted to regulate the thickness of the target crystals,leading to the precipitation of 2D non-layered material from the supersaturated solution;by applying this method,the highly crystalline non-layered 2D MoO_(2)flakes with so far the largest lateral size of up to sub-millimeter scale(~464μm)were *** studies have revealed that the 2D MoO_(2)features metallic properties,with an excellent sheet resistance as low as 99Ω·square^(-1 )at room temperature,and exhibits a property of charge density wave in the measurement of resistivity as a function of temperature.

关键词： 2D non-layered materials Metallic Metal oxide Thickness modulation Flux method

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