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European Conference on Radiation and its Effects on Components and Systems (RADECS)

作者： Shweta Bhandaru En Xia Zhang Daniel M. Fleetwood Robert A. Reed Robert A. Weller Sharon M. Weiss Interdisciplinary Graduate Program in Material Science Vanderbilt University Nashville TN USA Department of Electrical Engineering and Computer Science Vanderbilt University Nashville TN USA

Enhanced rates of oxide growth have been observed on silicon when exposed to high-energy x-ray irradiation. This observed effect could potentially be utilized for remote total ionizing dose-sensing applications.

关键词： Silicon Radiation effects Oxidation Atomic measurements Temperature measurement Optical sensors Atomic layer deposition

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High Performance High Dielectric Constant Films Deposited by Dual Spectral Source Rapid Isothermal Assisted Metalorganic Chemical Vapor Deposition (MOCVD)

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MRS Online Proceedings Library (OPL) 2011年第1期470卷 133-133页

作者： Y. Chen R. Singh S. DeBoer R.P.S. Thakur Department of Electrical and Computer Engineering Clemson University Clemson SC 29634 Department of Electrical and Computer Engineering and Material Science and Engineering Program Clemson University Clemson SC 29634 singh@ces.clemson.edu Micron Technology Inc. Boise ID 83706

Dual spectral source assisted MOCVD is an ideal technique for the deposition of high dielectric constant materials as well as other electronic and optical materials. Tungsten halogen lamps and a deuterium lamp are used as the sources of optical and thermal energy. Ta2O5 films were deposited at 200°C for 30 minutes and annealed at 600°C for 30 minutes have shown leakage current densities as low as 10−10 A/ cm2 for gate voltage under 5V. To the best of our knowledge, these are the best results reported to date by other researchers. The high energy photons used in the in-situ cleaning and deposition process play an important role in obtaining high quality films of Ta2O5.

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DC/AC Performance Analysis of Indium Antimonide Nanowires

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MRS Online Proceedings Library (OPL) 2011年第1期1336卷 mrss11-1336-p03-07-mrss11-1336-p03-07页

作者： Ali Bilge Guvenc Miroslav Penchev Jiebin Zhong Cengiz Ozkan Mihrimah Ozkan Department of Electrical Engineering University of California-Riverside Riverside CA 92521 U.S.A. Department of Mechanical Engineering University of California-Riverside Riverside CA 92521 U.S.A. Material Science and Engineering Program University of California-Riverside Riverside CA 92521 U.S.A.

We investigated the electrical properties and transmission line performance of indium antimonide nanowires. The results indicate that the of nanowires suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the contact resistances, scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. nanowires show extremely inductive behavior during the AC measurements and due to these parasitic parameters, they can sustain transmission for the signals having frequencies up to 10 MHz. The bandwidth of the nanowires is directly proportional to the diameter of the nanowires. Improving the mobility to higher values and introducing de-embedding and impedance matching to the measurements and analysis could easily carry the bandwidth beyond GHz levels.

关键词： electrical properties chemical vapor deposition (CVD) (deposition) nanoscale

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Micromachined anti-scatter grid fabricated using crystalline wet etching of (1 1 0) silicon and metal electroplating for X-ray imaging

Micromachined anti-scatter grid fabricated using crystalline...

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作者： Jeong, Dae-Hun Myung Kim, Jae Noh, Do Young Hyun Kim, Kwang Lee, Jong-Hyun 261 Cheomdan-gwagiro Buk-gu 500-712 Gwangju Korea Republic of School of Material Science and Engineering GIST 261 Cheomdan-gwagiro Buk-gu 500-712 Gwangju Korea Republic of Department of Biomedical Engineering Jungwon University #5 Goesan-eup Goesan-gun 367-805 Chungcheongbuk-do Korea Republic of Graduate-program of Medical System Engineering GIST 261 Cheomdan-gwagiro Buk-gu 500-712 Gwangju Korea Republic of

Two-dimensional micromachined anti-scatter grids were fabricated using MEMS technology, including crystalline wet etching of (1 1 0) silicon and metal electroplating for X-ray imaging. The core sizes of the square grids were 100, 200, and 300 μm with 2.2 mm height and 50 μm septa thickness. To prepare the etch mask for crystalline wet etching, silicon nitride was deposited using low pressure chemical vapor deposition (LPCVD). The grid patterns, which are aligned parallel to the vertical (1 1 1) plane of the (1 1 0) silicon, were transferred from the photomask onto the photoresist using deep ultraviolet (DUV) photolithography, and consecutively onto the silicon nitride using reactive ion etching (RIE). A (1 1 0) silicon substrate was then etched in a tetramethyl ammonium hydroxide (TMAH) solution to form a skeleton for the septa structure. Chrome was sputtered to provide a seed layer for nickel electroplating, where nickel grows on the sidewalls of the skeleton of the septa structure. Finally, two-dimensional septa with various grid ratios were constructed by cross-stacking several layers of the patterned (1 1 0) silicon wafer. Anti-scattering ability was experimentally characterized in terms of X-ray transmission by one-dimensional scanning of incident angle. © 2010 Elsevier B.V.

关键词： Photoresists

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Phonon transport and thermoelectricity in defect-engineered InAs nanowires

Phonon transport and thermoelectricity in defect-engineered ...

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2011 MRS Fall Meeting

作者： Weathers, Annie Moore, Arden L. Pettes, Michael T. Salta, Daniel Kim, Jaehyun Dick, Kimberly Samuelson, Lars Linke, Heiner Caroff, Philippe Shi, Li Department of Mechanical Engineering University of Texas at Austin Austin TX United States Material Science and Engineering Graduate Program University of Texas at Austin Austin TX United States Center for Nano and Molecular Science University of Texas at Austin Austin TX United States Division of Solid State Physics Lund University S-22100 Lund Sweden Polymer and Materials Chemistry Lund University S-22100 Lund Sweden Institut d'Electronique de Microelectronique et de Nanotechnologie UMR CNRS 8520 F-59652 Villeneuve d'Ascq France

ISBN: (纸本)9781627482219

There have been reports of improvements in the thermoelectric figure of merit through the use of nanostructured materials to suppress the lattice thermal conductivity. Here, we report on a fundamental study of the combined effects of defect planes and surface scattering on phonon transport and thermoelectric properties of defect-engineered InAs nanowires. A microfabricated device is employed to measure the thermal conductivity and thermopower of individual suspended indium arsenide nanowires grown by metal organic vapor phase epitaxy. The four-probe measurement device consists of platinum resistance thermometers and electrodes patterned on two adjacent SiNx membranes. A nanowire was suspended between the two membranes, and electrical contact between the nanowire and the platinum electrodes was made with the evaporation of a Ni/Pd film through a shadow mask. The exposed back side of the device substrate allows for characterization of the crystal structure of the suspended nanowire with transmission electron microscopy (TEM) following measurement. The 100-200 nm diameter zincblende (ZB) InAs nanowire samples were grown with randomly spaced twin defects, stacking faults, or phases boundaries perpendicular to the nanowire growth direction, as revealed by transmission electron microscopy (TEM) analysis. Compared to single-crystal ZB InAs nanowires with a similar lateral dimension, the thermal conductivity of the defect-engineered nanowires is reduced by fifty percent at room temperature. © 2012 materials Research Society.

关键词： Nanowires

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Low temperature NMR relaxation and rattling phonons in type-ⅠBasGa16Sn30 clathrates

Low temperature NMR relaxation and rattling phonons in type-...

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The 26th International Conference on Low Temperature Physics (第26届国际低温物理大会)

作者： Xiang Zheng Sergio Y.Rodriguez Joseph H.Ross Department of Physics and Astronomy Texas A(&)M UniversityCollege StationTX 77843-4242USA Material Science and Engineering Program Texas A &M UniversityCollege StationTX 77843-3003USA

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Signatures of Structural Recovery in Colloidal Glasses

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Physical Review Letters 2011年第9期106卷 095701-095701页

作者： Xiaojun Di (邸骁骏) K. Z. Win Gregory B. McKenna Tetsuharu Narita François Lequeux Srinivasa Rao Pullela Zhengdong Cheng Department of Chemical Engineering Texas Tech University Lubbock Texas 79409 USA Laboratory PPMD UPMC-ESPCI-CNRS UMR7615 10 rue Vauquelin 75231 Paris cedex 05 France Artie McFerrin Department of Chemical Engineering Texas A&M University College Station Texas 77843 USA Material Science and Engineering Program Texas A&M University College Station Texas 77843 USA

Colloids near the glass concentration are often taken as models for molecular glasses. Yet, an important aspect of the dynamics of molecular glasses, structural recovery, has not been elucidated in colloids. We take advantage of a thermosensitive colloidal suspension to study the structural recovery after concentration jumps by using diffusing wave spectroscopy. The three classical aging signatures observed in molecular glasses are studied and the results are compared with those typical of molecular glasses. For the intrinsic isotherms, unlike molecular glasses, the colloid shows huge changes in relaxation time at equilibrium while the times required to reach the equilibrium state are nearly constant. For asymmetry of approach, we find a similar nonlinearity to that observed in the molecular glasses. For the memory experiment, while a memory effect is seen, the response is qualitatively different from that in molecular glasses.

关键词： Recovery

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Phonon Transport and Thermoelectricity in Defect-Engineered InAs Nanowires

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MRS Online Proceedings Library 2011年第1期1404卷 36-43页

作者： Weathers, Annie Moore, Arden L. Pettes, Michael T. Salta, Daniel Kim, Jaehyun Dick, Kimberly Samuelson, Lars Linke, Heiner Caroff, Philippe Shi, Li Department of Mechanical Engineering The University of Texas at Austin Austin USA Center for Nano and Molecular Science The University of Texas at Austin Austin USA Material Science and Engineering Graduate Program The University of Texas at Austin Austin USA The Nanometer Structure Consortium (nmC@LU) and Division of Solid State Physics Lund University Lund Sweden Polymer & Materials Chemistry Lund Sweden Institut d’Electronique de Microelectronique et de Nanotechnologie UMR CNRS 8520 France

关键词： thermoelectric nanostructure thermal conductivity

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Chemically Controlled Bending of Compositionally Anisotropic Microcylinders†

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Angewandte Chemie 2011年第3期124卷

作者： Sampa Saha Davor Copic Srijanani Bhaskar Nicholas Clay Alessandro Donini A. John Hart Joerg Lahann Department of Chemical Engineering University of Michigan Ann Arbor MI 48109 (USA) Department of Mechanical Engineering University of Michigan (USA) Macromolecular Science and Engineering Program University of Michigan Ann Arbor MI 48109 (USA)

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Achieving fast discharge and low loss in poly(vinylidene fluoride-cochlorotrifluoroethylene)-graft-polystyrene films by confined ferroelectricity

Achieving fast discharge and low loss in poly(vinylidene flu...

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作者： Guan, Fangxiao Yuan, Zhongzhe Wang, Jing Zhu, Lei Polymer Program Institute of Materials Science and Department of Chemical Materials and Biomolecular Engineering University of Connecticut Storrs CT 06269-3136 United States Department of Macromolecular Science and Engineering Case Western Reserve University Cleveland OH 44106-7202 United States

Although a high electric energy density was recently reported for defect-modified poly(vinylidene fluoride) (PVDF) copolymers at millisecond discharge, they usually deliver less energy at a high pulse rate. In this work, a low loss polystyrene (PS) was grafted as side chains onto the P(VDF-CTFE) main chain. After crystallization of PVDF, dielectric PS side chains were segregated to the crystalline-amorphous interface, forming a finite confinement dielectric layer for ferroelectric PVDF crystals. We speculated that less space charge was induced during electric poling because of the nanoscale confinement effect. Consequently, a fast discharge speed and a relatively high energy density were achieved. © 2010 American Chemical Society.

关键词： Polystyrenes

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