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Improving the performance of blue phosphorescent organic light-emitting devices using a composite emitter

Organic Electronics 2009年第6期10卷 1158-1162页

作者： Chu, Miao-Tsai Lee, Meng-Ting Chen, Chin H. Tseng, Mei-Rurng Hsinchu 310 Taiwan Master Degree Program of Flat Panel Display Technology National Chiao Tung University Hsinchu 300 Taiwan Display Institute Microelectronics and Information Systems Research Center National Chiao Tung University Hsinchu 300 Taiwan

A composite emitter is constructed by doping a carrier-transporting material into a conventional emitter composing of only host and dopant. The transport of carriers from either hole- or electron-transporting layer into the emitter can be promoted through the carrier-transporting material, in particular, when a wide-band-gap host material is used. A blue phosphorescent OLED based on iridium(III)bis((4,6-difluorophenyl)-pyridinate-N,C2′)-picolinate (FIrpic) as dopant in the composite emitter achieved a power efficiency of 20 lm/W and a low driving voltage of 4.2 V at 1000 cd/m2, whose current efficiency at 20 mA/cm2 was 2.5 times better than that of device using the conventional emitter. © 2009 Elsevier B.V. All rights reserved.

关键词： Efficiency

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Thin Film Transistor with Al-Ni-La Alloy Gate Metallization technology

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ELECTROCHEMICAL AND SOLID STATE LETTERS 2011年第2期14卷 H57-H59页

作者： Liu, Po-Tsun Chou, Yi-Teh Hsu, Ting-Hao Fuh, Chur-Shyang Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan Natl Chiao Tung Univ Display Inst Hsinchu 30010 Taiwan Natl Chiao Tung Univ Inst Electroopt Engn Hsinchu 30010 Taiwan Natl Chiao Tung Univ Master Degree Program Flat Panel Display Technol Hsinchu 30010 Taiwan

In this study, an aluminum-nickel-lanthanum (Al-Ni-La) alloy is introduced, for the first time, to hydrogenated amorphous silicon thin film transistor (a-Si: H TFT) for gate metallization technology. Ni atoms in Al-Ni-La can effectively improve contact characteristic with ITO film, while La can increase the uniformity of contact resistance during film deposition compared to the conventional Al-Nd alloy. Besides, Al-Ni-La alloy has advantages of a simple process and better prevention against hillock issues, which benefits active matrix liquid-crystal display (AMLCD) manufacture. The Al-Ni-La gate thin film transistor (TFT) also exhibited reliable electrical characteristics. The process compatibility with typical TFT manufacture makes Al-Ni-La gate metallization greatly promising for AMLCD technology application. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3516178] All rights reserved.

关键词： Metalation METAL ALLOY Thin film transistors LANTHANUM ALLOYS contact resistance gates

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Retarded photoreaction reversibility of a-izo tft for light sensor applications

Retarded photoreaction reversibility of a-izo tft for light ...

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2009 Vehicles and Photons Symposium

作者： Liu, Po-Tsun Chou, Yi-Teh Teng, Li-Feng Chu, Chun Hung Shieh, Han-Ping D. Department of Photonics & Display Institute National Chiao Tung University Hsinchu300 Taiwan Department of Photonics & Institute of Electro-Optical Engineering National Chiao Tung University Hsinchu300 Taiwan Master Degree Program of Flat Panel Display Technology National Chiao Tung University Hsinchu300 Taiwan Department of Photonics & Display Institute National Chiao Tung University Hsinchu300 Taiwan

The retarded photoreaction reversibility of a-IZO TFT has been discussed in this work. With a small DC voltage bias, the reaction was speeded up and the electrical characteristics were recovered back to the fresh state. The Vth shifting behavior possesses the potential for the light sensor applications in display technologies. � 2009 SID.

关键词： Photoreactivity

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P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AMLCD

P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AM...

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作者： Liu, Po-Tsun Chou, Yi-Teh Hsu, Ting-Hao Huang, An-Di Chen, Bing-Mau Department of Photonics Display Institute National Chiao Tung University Hsinchu 300 Taiwan Department of Photonics Institute of Electro-Optical Engineering National Chiao Tung University Hsinchu 300 Taiwan Master Degree Program Flat Panel Display Technology National Chiao Tung University Hsinchu 300 Taiwan Department of Opto-Electronic System Engineering Minghsin University of Science and Technology Hsinchu 30010 Taiwan

AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si-based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al-Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified. © 2010 SID.

关键词： Aluminum alloys

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P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AMLCD

P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AM...

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48th Annual SID Symposium, Seminar, and Exhibition 2010, display Week 2010

作者： Liu, Po-Tsun Chou, Yi-Teh Hsu, Ting-Hao Huang, An-Di Chen, Bing-Mau Department of Photonics Display Institute National Chiao Tung University Hsinchu 300 Taiwan Department of Photonics Institute of Electro-Optical Engineering National Chiao Tung University Hsinchu 300 Taiwan Master Degree Program of Flat Panel Display Technology National Chiao Tung University Hsinchu 300 Taiwan Department of Opto-Electronic System Engineering Minghsin University of Science and Technology Hsinchu 30010 Taiwan

ISBN: (纸本)9781618390950

关键词： Electrodes

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P-15: Retarded Photoreaction Reversibility of a-IZO TFT for Light Sensor Applications

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SID Symposium Digest of Technical Papers 2012年第1期40卷

作者： Po-Tsun Liu Yi-Teh Chou Li-Feng Teng Chun Hung Chu Han-Ping D. Shieh Department of Photonics & Display Institute National Chiao Tung University Hsinchu Taiwan 300 Department of Photonics & Institute of Electro-Optical Engineering National Chiao Tung University Hsinchu Taiwan 300 Master Degree Program of Flat Panel Display Technology National Chiao Tung University Hsinchu Taiwan 300

The retarded photoreaction reversibility of a-IZO TFT has been discussed in this work. with a small DC voltage bias, the reaction was speeded up and the electrical characteristics were recovered back to the fresh state. The V th shifting behavior possesses the potential for the light sensor applications in display technologies.

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P-27: Novel AlNiLa Serves as Gate Electrodes of a-TFT for AMLCD

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SID Symposium Digest of Technical Papers 2012年第1期41卷

作者： Po-Tsun Liu Yi-Teh Chou Ting-Hao Hsu An-Di Huang Bing-Mau Chen Department of Photonics & Display Institute National Chiao Tung University Hsinchu Taiwan 300 Department of Photonics & Institute of Electro-Optical Engineering National Chiao Tung University Hsinchu Taiwan 300 Master Degree Program of Flat Panel Display Technology National Chiao Tung University Hsinchu Taiwan 300 Department of Opto-Electronic System Engineering Minghsin University of Science and Technology Hsinchu Taiwan 30010 R.O.C.

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Influence of human engineering on manning levels and human performance on ships

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NAVAL ENGINEERS JOURNAL 1997年第5期109卷 67-76页

作者： Anderson, DE Oberman, FR Malone, TB Baker, CC David E. Anderson:has a bachelor of science degree in environmental engineering from Florida Technological University and a master's degree in environmental engineering from the University of Central Florida. He is a graduate of the Naval Sea Systems Command's Engineer-In-Training (EIT) Program. Mr. Anderson was instrumental in introducing the collective protection system (CPS) in the U.S. Navy developing the initial forward-fit package for the USS Gunston Hall and the engineering change proposal (ECP) for the USS Wasp. In 1990 he joined the Human Systems Integration (HSI) Division (SEA 55W5) where he was task leader for auxiliary ships. He is currently the HSI manager for the future technology variant of the SeaLift ship and the future carrier. Association of Scientists and Engineers 33rdAnnual Technical Symposium 26 April 1996. Fred R. Oberman:has B.A. and M.A. degrees from the University of Chicago and Loyola University (experimental psychology) and an M.S. degree in industrial engineering and operations research from Virginia Polytechnic Institute (VPI). He has more than 30 years experience in HSI management planning research analysis design and testing in government and private sector positions. He is currently responsible for NavSea HSI generic research and tool development efforts. He is responsible for Human Engineering Specifications and Standards (Commercial Hypertext) and is the NavSea 03D7 representative on HSI in Performance Specifications and for integration of HSI within Integrated Logistic Support (ILS). He has served as DoD HSI SubTAG chair and member of the Simulation and Modeling Test and Evaluation Display and Control Systems Human Computer Interaction Specifications and Standards and Systems Design Sub Tags as a member of the Society of Naval Architects and Marine Engineers (SNAME) Systems Safety Panel and a member of NATO RSG 14 on man-machine analysis. Thomas B. Malone: CHFEP received a Ph.D. in experimental psychology from Fordham University in 1964. He is president of Carlow

The objectives of Human Engineering (HE) are generally viewed as increasing human performance, reducing human error, enhancing personnel and equipment safety, and reducing training and related personnel costs. There are other benefits that are thoroughly consistent with the direction of the Navy of the future, chief among these is reduction of required numbers of personnel to operate and maintain Navy ships. The Naval Research Advisory Committee (NRAC) report on Man-Machine technology in the Navy estimated that one of the benefits from increased application of man-machine technology to Navy ship design is personnel reduction as well as improving system availability, effectiveness, and safety The objective of this paper is to discuss aspects of the human engineering design of ships and systems that affect manning requirements, and impact human-performance and safety The paper will also discuss how the application of human engineering leads to improved performance, and crew safety, and reduced workload, all of which influence manning levels. Finally, the paper presents a discussion of tools and case studies of good human engineering design practices which reduce manning.

关键词： Human engineering

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