The simultaneous optimization of the bulk and surface characteristics of photoelectrodes is essential to maximize their photoelectrochemical(PEC)*** report a novel one-pot hydrothermal synthesis of textured and surfac...
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The simultaneous optimization of the bulk and surface characteristics of photoelectrodes is essential to maximize their photoelectrochemical(PEC)*** report a novel one-pot hydrothermal synthesis of textured and surface-reconstructed BiVO_(4)photoanodes(ts-BVO),achieving significant improvements in PEC water *** controlling precursor molarity and ethylene glycol(EG)addition,we developed a stepwise dual reaction(SDR)mechanism,which enables simultaneous bulk texture development and surface *** optimized CoBi/ts-BVO photoanode exhibited a photocurrent density of 4.3 mA∙cm^(−2)at 1.23 V *** hydrogen electrode(RHE)with a high Faradaic efficiency of 98%under one sun *** with nontextured BiVO_(4),the charge transport efficiency increased from 8%to 70%,whereas the surface charge transfer efficiency improved from 9%to 85%.These results underscore the critical role of both bulk and surface engineering in enhancing PEC *** findings offer a streamlined approach for improving the intrinsic properties of photoanodes in solar water splitting.
Shale, a complex sedimentary rock, exhibits heterogeneous mechanical behavior influenced by its mineral composition and microstructure. Nanoindentation scratch tests offer a promising method to probe the local mechani...
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In this paper, we present the first, to the best of our knowledge, measurement of spatial Goos–Hänchen (GH) shifts for low-loss dielectrics (φ0 = Εi/|Εr| 1). The observed resonant shifts are up to 100λ. Beca...
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Tungsten(W)is the leading plasma-facing candidate material for the International Thermonuclear Experimental Reactor and next-generation fusion *** impact of synergistic helium(He),irradiation-induced microstructural c...
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Tungsten(W)is the leading plasma-facing candidate material for the International Thermonuclear Experimental Reactor and next-generation fusion *** impact of synergistic helium(He),irradiation-induced microstructural changes,and the corresponding thermal-mechanical property degradation of W are critically important but are not well understood *** the performance of W in fusion environments requires understanding the fundamentals of He-defect interactions and the resultant He bubble nucleation and growth in *** this study,He retention in helium-ion-implanted W was assessed using neutron depth profiling(NDP),laser ablation mass spectrometry(LAMS),and thermal desorption spectroscopy(TDS)following 10 keV room-temperature He implantation at various *** three experimental techniques enabled the determination of the He depth profile and retention in He-implanted W.A cluster dynamics model based on the diffusion-reaction rate theory was applied to interpret the experimental *** model successfully predicted the He spatial depth-dependent profile in He-implanted W,which was in good agreement with the LAMS *** model also successfully captured the major features of the He desorption spectra observed in the THDS *** NDP quantified total He concentration values for the samples;they were similar to those estimated by ***,the depth profiles from NDP and LAMS were not comparable due to several *** combination of modeling and experimentation enabled the identification of possible trapping sites for He in W and the evolution of He-defect clusters during the TDS thermal annealing process.
We present light extraction efficiency (LEE) improvement for InGaN red micro-light emitting diodes (micro-LEDs) of various sizes operating at low current densities. We compared the characteristics of micro-LEDs with i...
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We present light extraction efficiency (LEE) improvement for InGaN red micro-light emitting diodes (micro-LEDs) of various sizes operating at low current densities. We compared the characteristics of micro-LEDs with indium tin oxide (ITO) transparent p-electrodes with conventional opaque metal p-electrodes. 50 µm × 50 µm micro-LEDs with ITO p-electrodes achieved a peak on-wafer external quantum efficiency (EQE) of 2.54% with an emission wavelength of 640 nm at a current density as low as 0.4 A/cm 2 . This represents a 1.18-fold improvement in peak EQE compared to devices with metal p-electrodes. Light ray tracing simulation confirmed that the ITO p-electrodes exhibit 1.18 times higher light escape than metal-based micro-LEDs, validating the role of enhanced light extraction. These findings provide valuable insights for advancing high-definition display and VR applications.
GeSn alloys hold great promise for the development of Si photonics due to its direct bandgap with sufficient high Sn composition, tunable bandgap energies covering broad infrared wavelength range, and compatibility wi...
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GeSn alloys hold great promise for the development of Si photonics due to its direct bandgap with sufficient high Sn composition, tunable bandgap energies covering broad infrared wavelength range, and compatibility with the complementary metal-oxide-semiconductor (CMOS) process. For the past decades, tremendous efforts have been made to develop material growth recipes to obtain device-level material quality using chemical vapor deposition (CVD) reactors. A common issue in material growth is the formation of Sn droplets (i.e., Sn segregation) that seriously degrades the material quality. However, although industrial CVD has delivered high-quality materials for device demonstration, the dynamic process of material growth remains unavailable, and only ex-situ material characterizations could provide feedback. In this work, a specially designed ultra-high-vacuum CVD (UHV-CVD) was used to study the growth dynamic by employing an in-situ optical system, which enables us to monitor the formation of Sn droplets in real-time. The Sn segregation occurring at the cooling stage after growth completion rather than during material growth was discovered, indicating that a post-growth treatment is needed to minimize the Sn droplet formation. By extending the GeSn growth time and controlling the cooling cycle, the number of Sn droplets dramatically reduced, leading to a high-quality strain-relaxed GeSn layer with 10.2% Sn composition and over 730 nm thickness. material quality is comparable with those grown using commercial RPCVD in the early stage, which was further confirmed by the demonstration of an optically pumped laser. A threshold of ∼600 kW/cm 2 at 77 K and a maximum operating temperature of 100 K were obtained, with the lasing peak at ∼2250 nm.
The implementation of titanium dioxide (TiO2) as a photocatalyst material in hydrogen (H2) evolution reaction (HER) has embarked renewed interest in the past decade. Rapid electron-hole pairs recombination and wide ba...
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A paper-based biosensor integrating a functionalized porous silicon (PSi) membrane as the active sensing element for quantifiable protein detection has been developed. For similar short-time exposures to an analyte, i...
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Conventional thermal barrier coatings (TBCs) composed of yttria-stabilized zirconia (YSZ) ceramic top layers and MCrAlY (M = Ni, Co, or their combination) alloy bond coats are prone to brittle fracture and interfacial...
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This article was updated to correct Minghao Zhang’s affiliation from "Pritzker School of Molecular engineering, The University of Chicago, Chicago, USA" to "Pritzker School of Molecular engineering, Th...
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