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Defect and Disorder Induced Phonon Softening in Boron Arsenide Using STEM-EELS

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada 2023年第1期29卷 651-652页

作者： Wu, Han-Hsuan Yang, Hongbin Gadre, Chaitanya A. Yan, Xingxu Aoki, Toshihiro Liao, Bolin Ren, Zhifeng Pan, Xiaoqing Department of Physics and Astronomy University of California Irvine CA United States Department of Material Science and Engineering University of California Irvine CA United States Irvine Materials Research Institute University of California Irvine Irvine CA United States Department of Mechanical Engineering University of California Santa Barbara CA United States Department of Physics and Texas Center for Superconductivity University of Houston Houston TX United States

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Investigation of He retention in W through combined He characterization methods and cluster dynamics model

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Nuclear science and Techniques 2025年第3期36卷 201-213页

作者： Jie Qiu Xun-Xiang Hu Cong-Yi Li Wendy Garcia Tan Shi Sha Xue Jamie L.Weaver HHeather Chen-Mayer Brian D.Wirth SJTU Paris Elite Institute of Technology Shanghai Jiao Tong UniversityShanghai 200240China Department of Nuclear Engineering University of TennesseeKnoxvilleTN 37996USA School of Physics Sichuan UniversityChengdu 610065China Oak Ridge National Laboratory Oak RidgeTN 37830USA Global Institute of Future Technology Shanghai Jiao Tong UniversityShanghai 200240China School of Nuclear Science and Technology Xi’an Jiaotong UniversityXi’an 710049China Nuclear Engineering Program The Ohio State UniversityColumbusOH 43210USA Material Measurement Laboratory National Institute of Standards and TechnologyGaithersburgMD 20899USA

Tungsten(W)is the leading plasma-facing candidate material for the International Thermonuclear Experimental Reactor and next-generation fusion *** impact of synergistic helium(He),irradiation-induced microstructural changes,and the corresponding thermal-mechanical property degradation of W are critically important but are not well understood *** the performance of W in fusion environments requires understanding the fundamentals of He-defect interactions and the resultant He bubble nucleation and growth in *** this study,He retention in helium-ion-implanted W was assessed using neutron depth profiling(NDP),laser ablation mass spectrometry(LAMS),and thermal desorption spectroscopy(TDS)following 10 keV room-temperature He implantation at various *** three experimental techniques enabled the determination of the He depth profile and retention in He-implanted W.A cluster dynamics model based on the diffusion-reaction rate theory was applied to interpret the experimental *** model successfully predicted the He spatial depth-dependent profile in He-implanted W,which was in good agreement with the LAMS *** model also successfully captured the major features of the He desorption spectra observed in the THDS *** NDP quantified total He concentration values for the samples;they were similar to those estimated by ***,the depth profiles from NDP and LAMS were not comparable due to several *** combination of modeling and experimentation enabled the identification of possible trapping sites for He in W and the evolution of He-defect clusters during the TDS thermal annealing process.

关键词： Tokamak Nuclear reactor Nondestructive detection

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Short Wave Infrared Upconversion Imager with Electron Blocking Layer to Screen Electron Injection into Photosensitive Layer

Short Wave Infrared Upconversion Imager with Electron Blocki...

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IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)

作者： Chanho Shin Ning Li Tse Nga Ng Material Science and Engineering Program University of California San Diego La Jolla USA Department of Electrical and Computer Engineering University of California San Diego La Jolla USA

In this work, we demonstrated upconversion imagers integrated with shortwave infrared photodetectors paired with an electron blocking layer. The use of electron blocking layer screened charge injection to prevent recombination in photosensitive layer. The characteristics of each electron blocking layer were analyzed in aspects of noise and detectivity. For the optimized device, the parasitic luminance in the dark was efficiently suppressed, and the photon-to-photon efficiency was increased. The electron blocking layer used in this work is generally applicable for upconversion imagers using different absorption and emitting materials.

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Tunable Sparing of Disks in a Cloud Data Center 7

Tunable Sparing of Disks in a Cloud Data Center

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7th International Conference on Computer Applications in Electrical engineering-Recent Advances, CERA 2023

作者： Malawat, Rohit Modi, Shrey Vishwakarma, Rahul Indian Institute of Technology Roorkee Department of Material Science and Metallurgy Roorkee India California State University Long Beach Department of Computer Engineering & Computer Science Long Beach United States California State Uni. Long Beach Department of Computer Engineering & Computer Science Long BeachCA United States

ISBN: (纸本)9798350305005

Disk Drive failure tolerance and optimum utilization of disks for storage are two of the most important challenges in the Cloud based data center. Addressing both these problems simultaneously can be tricky. To make the system failure tolerant, more storage needs to be added;this results in redundancy of storage. Providing a safety net for the disk is important to make sure that the disk can still operate. Therefore, we propose a novel drive sparing mechanism which not only provides failure tolerance by maintaining the optimal number of spare drives in the storage system, but also deals with over-provisioned spare. The method first identifies the critical disks that may fail in the RAID group based on the Venn-ABERS framework which helps us to know about the conditional probability of the disk failure, and then implements a variable sparing mechanism where a few disks act as dual-purpose disks. We demonstrate variable sparing using two cases, first when minimum spare pool is sufficient, and second, when minimum spare pool is not sufficient for failure tolerance. By proactively addressing potential failure points, the drives are able to extend their lifespan and enhance reliability when the variable sparing is utilized. In this paper, we explain the mechanism of variable sparing of disks and share results of an evaluation experiment using an open-source dataset by utilizing our prototype system. © 2023 IEEE.

关键词： Digital storage

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Atomic layer etching of niobium nitride using sequential exposures of O2 and H2/SF6 plasmas

arXiv

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arXiv 2025年

作者： Hossain, Azmain A. Murphy, Sela Catherall, David Ardizzi, Anthony J. Minnich, Austin J. Division of Engineering and Applied Science California Institute of Technology CA91125 United States Department of Material Science and Engineering University of California BerkeleyCA94720 United States

Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature (Tc) and kinetic inductance. Processing-induced damage negatively affects the performance of these devices by mechanisms such as microwave surface loss. Atomic layer etching (ALE), with its ability to etch with Angstrom-scale control and low damage, has the potential to address these issues, but no ALE process is known for NbN. Here, we report such a process consisting of sequential exposures of O2 plasma and H2/SF6 plasma. Exposure to O2 plasma rather than O2 gas yields a greater fraction of Nb in the +5 oxidation state, which is then volatilized by NbF5 formation with exposure to an H2/SF6 plasma. The SF6:H2 flow rate ratio is chosen to produce selective etching of Nb2O5 over NbN, enabling self-limiting etching within a cycle. An etch rate of 1.77 Å/cycle was measured at 125 ◦C using ex situ ellipsometry. The Tc of the ALE-etched film is higher than that of an RIE-etched film of a similar thickness, highlighting the low-damage nature of the process. These findings have relevance for applications of NbN in single-photon detectors and superconducting microresonators. Copyright © 2025, The Authors. All rights reserved.

关键词： Superconducting transition temperature

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Thermal energy dependent transient permittivity of epsilon-near-zero material

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science China(Physics,Mechanics & Astronomy) 2022年第8期65卷 96-101页

作者： Heng Wang Lixun Sun Kang Du Wending Zhang SooJin Chua Guixin Li Ting Mei MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an710129China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen518055China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and TechnologyShenzhen518055China Department of Electrical and Computer Engineering National University of SingaporeSingapore117583Singapore LEES Program Singapore-MIT Alliance for Research&Technology(SMART)Singapore138602Singapore

Transparent conductive oxides exhibit attractive optical nonlinearity with ultrafast response and giant refractive index change near the epsilon-near-zero(ENZ) wavelength, originating from the intraband dynamics of conduction electrons. The optical nonlinearity of ENZ materials has been explained by using the overall-effective-mass and the overall-scattering-time of electrons in the extended Drude model. However, their response to optical excitation is yet the last building block to complete the theory. In this paper, the concept of thermal energy is theoretically proposed to account for the total energy of conduction electrons exceeding their thermal equilibrium value. The time-varying thermal energy is adopted to describe the transient optical response of indium-tin-oxide(ITO), a typical ENZ material. A spectrally-resolved femtosecond pump-probe experiment was conducted to verify our theory. By correlating the thermal energy with the pumping density, both the giant change and the transient response of the permittivity of ITO can be predicted. The results in this work provide a new methodology to describe the transient permittivities of ENZ materials, which will benefit the design of ENZ-based nonlinear photonic devices.

关键词： epsilon-near-zero optical nonlinearity transient response thermal energy hot electron indium tin oxide

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Atomic-scale Origin of the Low Grain-boundary Resistance in Perovskite Solid Electrolyte Li0.375Sr0.4375Ta0.75Zr0.25O3

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Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada 2023年第1期29卷 1267-1269页

作者： Lee, Tom Qi, Ji Gadre, Chaitanya A. Huyan, Huaixun Ko, Shu-Ting Zuo, Yunxing Du, Chaojie Li, Jie Aoki, Toshihiro Wu, Ruqian Luo, Jian Ong, Shyue Ping Pan, Xiaoqing Department of Materials Science and Engineering University of California at Irvine Irvine CA United States Materials Science and Engineering Program University of California San Diego La Jolla CA United States Department of Physics and Astronomy University of California at Irvine Irvine CA United States Department of NanoEngineering University of California San Diego La Jolla CA United States Irvine Materials Research Institute University of California at Irvine Irvine CA United States

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Improvement of corrosion resistance and heat dissipation of Mg-6%Al-4%Ca alloy by the addition of Mn, Mm, and the surface treatment

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Keikinzoku/Journal of Japan Institute of Light Metals 2023年第12期73卷 646-650页

作者： Ito, Mizuki Kondo, Natsuki Kirimoto, Yuichi Tsukeda, Tadayoshi Aida, Tetsuo Tabata, Hironobu Kurihara, Hideki Suzuki, Mayumi Program of Materials Science and Engineering Studies in Science and Engineering Graduate School of Science and Engineering University of Toyama 3190 Gofuku Toyama-shi Toyama930-8555 Japan School of Sustainable Design Materials and Engineering University of Toyama Toyama Toyama-shi Japan Department of Nano and Functional Material Science Graduate School of Science and Engineering for Education University of Toyama Toyama Toyama-shi Japan Faculty of Sustainable Design Academic Assembly University of Toyama Toyama Toyama-shi Japan CHUETSU METAL WORKS CO LTD.. Nakaniikawa-gun Toyama Japan Saitama Industrial Technology Center Kawaguchi-shi Saitama Japan Department of Mechanical Systems Engineering Faculty of Engineering Toyama Prefectural University Toyama Imizu-shi Japan

With the recent digitization, electronic equipment housings are required to be thin-walled and have rigidity, heat dissipation, corrosion resistance, and electromagnetic shielding properties. Magnesium alloys are promising materials that satisfy these requirements. Mg-Al alloys have good castability and high strength, but their thermal conductivity decreases. In general, adding alloying elements to magnesium decreases thermal conductivity the effect of aluminum addition is significant. It was found that adding calcium to Mg-Al alloys to form Mg-Al-Ca (AX) alloys results in higher thermal conductivity than that of Mg-Al alloys. However, AX alloys have poor corrosion resistance and require post-treatment such as surface treatment. In this study, AX64, which has high thermal conductivity among the AX series alloys, was used as the basic composition, and corrosion resistance was improved by adding manganese and misch metal, and an attempt was made to improve corrosion resistance and emissivity through surface treatment. The change in thermal conductivity by heat treatment was also investigated. Experimental results showed that the addition of manganese and misch metal improved corrosion resistance and thermal conductivity. Plasma anodization also improved corrosion resistance and emissivity. Heat treatment of these alloys at 400°C improved the thermal conductivity with longer holding time. © 2023 The Japan Institute of Light Metals.

关键词： Corrosion resistance

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Evidence of magnetoelectronic electromagnon-mediated transport in flexoelectronic heterostructures

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Physical Review B 2023年第16期107卷 165305-165305页

作者： Anand Katailiha Paul C. Lou Ravindra G. Bhardwaj W. P. Beyermann Sandeep Kumar Department of Mechanical Engineering University of California Riverside California 92521 USA Department of Physics and Astronomy University of California Riverside California 92521 USA Materials Science and Engineering Program University of California Riverside California 92521 USA

The superposition of atomic vibrations and flexoelectronic effect gives rise to a cross correlation between free charge carriers and temporal magnetic moment of phonons in conducting heterostructures under an applied strain gradient. The resulting dynamical coupling is expected to give rise to quasiparticle excitations called magnetoelectronic electromagnons that carry electronic charge and temporal magnetic moment. Here, we report experimental evidence of magnetoelectronic electromagnons in the freestanding degenerately doped p-Si based heterostructure thin film samples. These quasiparticle excitations give rise to long-distance (>100 μm) spin transport, demonstrated using spatially modulated transverse magnetothermoelectric and nonlocal resistance measurements. The magnetoelectronic electromagnons are nonreciprocal and give rise to large magnetochiral anisotropy (0.352A−1T−1) that diminishes at lower temperatures. The superposition of nonreciprocal magnetoelectronic electromagnons gives rise to longitudinal and transverse modulations in charge carrier density, spin density, and magnetic moment, demonstrated using the Hall effect and edge dependent magnetoresistance measurements, which can also be called inhomogeneous magnetoelectronic multiferroic effect. These quasiparticle excitations are analogous to photons where time dependent polarization and temporal magnetic moment replace electric and magnetic field, respectively, and most likely topological because they manifest topological Nernst effect. Hence, the magnetoelectronic electromagnon can potentially give rise to quantum interference and entanglement effects in conducting solid state systems at room temperature in addition to efficient spin transport.

关键词： Flexoelectricity Magnetic coupling Magnetotransport Spin current Spin-phonon coupling Doped semiconductors Multiferroics

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Eliminating the Bias from Liquid-Junction Potential for Charge-Transfer Analysis

Eliminating the Bias from Liquid-Junction Potential for Char...

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9th Symposium on Organic Semiconductor materials, Devices, and Processing, held at the 245th ECS Meeting

作者： O’Mari, J.O. Vullev, V.I. Department of Bioengineering University of California RiversideCA92521 United States Department of Chemistry University of California RiversideCA92521 United States Department of Biochemistry University of California RiversideCA92521 United States Materials Science and Engineering Program University of California RiversideCA92521 United States

ISBN: (纸本)9781623326784

Liquid junctions in electrochemical cells introduce potentials that can strongly affect measurements. Such liquid-junction potential errors can exceed 100 mV. In the analysis of charge-transfer thermodynamics, error differences of 100 mV can have substantial impact on the interpretations. Discussion herein outlines an approach for eliminating the effects of liquid-junction potentials from charge-transfer analysis. © The Electrochemical Society.

关键词： Charge transfer

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