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Artificial Intelligence Robotics, Signal and Image Processing (AIRoSIP), International Conference on

作者： Rissa Rahmania Yaya Heryadi Lukas Lukas Wayan Suparta Ilvico Sonata Computer Science Department BINUS Graduate Program Computer Science Bina Nusantara University Jakarta Indonesia Cognitive Engineering Group (CEG) Faculty of Engineering Universitas Katolik Atma Jaya Jakarta Indonesia Department of Electrical Engineering Faculty of Industrial Technology Institut Teknologi Nasional Yogyakarta Yogyakarta Indonesia

ISBN: (数字)9798350327472

ISBN: (纸本)9798350327489

The existence of fine-grained image classification supporting smart retail provides effectiveness in recognizing products with high similarity. However, the generic classification method performs poorly in identifying products from a subordinate category. This paper aims to identify augmentation techniques to leverage the Vision Transformer (ViT) model to classify the fine-grained grocery product, which involves embedding patches and transformer encoders to extract the main features. First, we develop a fine-grained image dataset with ColorJitter, CutOut, and combining both augmentations. Secondly, we perform experiments and analysis of ViT size, embedded patch size and image size in the patch embedding process. Lastly, the ViT model are evaluated according to the image sizes 224, 384, and 512 in accuracy, loss, and confusion matrix. The highest accuracy was obtained at 0.9922. The ColorJitter and CutOut improved the confusion matrix in ViT-B/16 and ViT-L/16 with an image size of 384 and 512. The results show that both augmentations in the ViT model are able to distinguish fine-grained grocery products.

关键词： Surveys computer vision Accuracy Image recognition Transformers Feature extraction Data augmentation Artificial intelligence Image classification

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Trapping processes and band discontinuities in Ga2O3FinFETs investigated by dynamic characterization and optically-assisted measurements 12

Trapping processes and band discontinuities in Ga2O3FinFETs ...

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Oxide-Based materials and Devices XII 2021

作者： De Santi, C. Fabris, E. Caria, A. Buffolo, M. Li, W. Nomoto, K. Hu, Z. Jena, D. Xing, H.G. Meneghesso, G. Zanoni, E. Meneghini, M. Department of Information Engineering University of Padova Padova35131 Italy School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States Department of Materials Science and Engineering School of Electrical and Computer Engineering Kavli Institute at Cornell for Nanoscience Cornell University IthacaNY14853 United States

ISBN: (纸本)9781510642096

In this paper, we analyze the threshold voltage stability of beta-Ga2O3FinFETs for power applications using Al2O3 as gate insulator. In dynamic characterization measurements, when the filling bias condition is moved from off-state to on-state a positive threshold voltage shift is induced, caused by the trapping of electrons in the insulator or at the insulator interface with the semiconductor. The threshold voltage variation was found to be stable in rest condition, but illumination by 280 nm UV light was able to slowly recover the threshold voltage even below its value before the filling condition was applied, suggesting the presence of natively trapped charge into the oxide even in the as-grown device. In order to obtain more information on the role of the external illumination, monochromatic excitation in the range from 1.5 eV to 5 eV was applied to the device before a transfer characteristic measurement. Results show that photon energies lower than 2.2 eV cause a positive threshold voltage shift, caused by charge trapping during the measurement phase and not related to illumination. Photon energies between 2.2 eV and 3.5 eV promote electron detrapping, leading to a partial recovery in the threshold voltage. Finally, energies above 3.5 eV cause an additional charge trapping process. The physical origin of the photon energy difference was investigated by monochromatic light-induced current transients, and a suitable model considering the conduction band discontinuities between the gate metal and the oxide and between the oxide and the semiconductor was developed to explain the experimental data. © 2021 SPIE. All rights reserved.

关键词： Charge trapping

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Phase segregation mechanisms of small molecule-polymer blends unraveled by varying polymer chain architecture

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SmartMat 2021年第3期2卷 367-377页

作者： Jihua Chen Sanjib Das Ming Shao Guoliang Li Huada Lian Jian Qin James F.Browning Jong K.Keum David Uhrig Gong Gu Kai Xiao Center for Nanophase Materials Sciences Oak Ridge National LaboratoryOak RidgeTennesseeUSA Department of Electrical Engineering and Computer Science University of TennesseeKnoxvilleTennesseeUSA Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhanChina Department of Materials Science and Engineering University of TennesseeKnoxvilleTennesseeUSA Department of Chemical Engineering Stanford UniversityStanfordCaliforniaUSA Neutron Scattering Division Oak Ridge National LaboratoryOak RidgeTennesseeUSA

As phase separation between the small-molecule semiconductor and the polymer binder is the key enabler of blend-based organic field-effect transistors(OFETs)fabricated by low-cost solution processing,it is crucial to understand the underlying phase separation mechanisms that determine the phase morphology,which significantly impacts device *** the parameter space investigated in previous work,here we investigate the formation of blends by varying the branch architecture of the polymer binder and by shortening the solvent dry time using ultrasonic spray *** phase morphologies of the resulting blend films have been thoroughly characterized with a variety of techniques in three dimensions over multiple length scales,including AFM,energy-filtered transmission electron microscope,and neutron reflectivity,and have been correlated with electrical transport *** the results,we have inferred that the phase morphology is kinetically determined,limited by the inherent slow movement of polymer *** kinetic picture,supported by molecular dynamics modeling,not only consistently explains our observations but also resolves inconsistencies in previous *** achieved mechanistic understanding will guide further optimization of blend-based organic electronics,such as OFETs and organic photovoltaics.

关键词： neutron reflectivity organic field-effect transistors phase separation polymer binders

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Control of Néel Vector with Spin-Orbit Torques in an Antiferromagnetic Insulator with Tilted Easy Plane

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Physical Review Letters 2022年第1期129卷 017203-017203页

作者： Pengxiang Zhang Chung-Tao Chou Hwanhui Yun Brooke C. McGoldrick Justin T. Hou K. Andre Mkhoyan Luqiao Liu Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Physics Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Chemical Engineering and Materials Science University of Minnesota Minneapolis Minnesota 55455 USA

Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque switching represents a challenging topic. Because of the diminishing magnetic susceptibility, current-induced antiferromagnetic dynamics remain poorly characterized, complicated by spurious effects. Here, by growing a thin film antiferromagnet, α−Fe2O3, along its nonbasal plane orientation, we realize a configuration where the spin-orbit torque from an injected spin current can unambiguously rotate and switch the Néel vector within the tilted easy plane, with an efficiency comparable to that of classical ferrimagnetic insulators. Our study introduces a new platform for quantitatively characterizing switching and oscillation dynamics in antiferromagnets.

关键词： Antiferromagnetism Spin dynamics Spin-orbit torque

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Impact of CLAHE-based image enhancement for diabetic retinopathy classification through deep learning

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Procedia computer science 2023年 216卷 57-66页

作者： Mira Hayati Kahlil Muchtar Roslidar Novi Maulina Irfan Syamsuddin Gregorius Natanael Elwirehardja Bens Pardamean Department of Electrical and Computer Engineering Universitas Syiah Kuala Banda Aceh 23111 Indonesia Telematics Research Center (TRC) Universitas Syiah Kuala Banda Aceh 23111 Indonesia Faculty of Medicine Universitas Syiah Kuala Banda Aceh 23111 Indonesia Department of Computer and Networking Engineering Politeknik Negeri Ujung Pandang Makassar 90245 Indonesia Bioinformatics and Data Science Research Center Bina Nusantara University Jakarta 11480 Indonesia Computer Science Department BINUS Graduate Program – Master of Computer Science Program Bina Nusantara University Jakarta 11480 Indonesia

Diabetic retinopathy (DR) is a type of diabetes mellitus that attacks the retina of the eye. DR will cause patients to experience blindness slowly. Generally, DR can be detected by using a special instrument called an ophthalmoscope to view the inside of the eyeball. However, in conditions where there is a very small difference between the normal image and the DR image, computer-based assistance is needed for maximizing image reading value. In this research, a method of image quality improvement will be carried out which will then be integrated with a classification algorithm based on deep learning. The results of image improvement using Contrast Limited Adaptive Histogram Equalization (CLAHE) shows that the average accuracy of the method on several models is very competitive, 91% for the VGG16 model, 95% for InceptionV3, and 97% for EfficientNet compared to the results original image which only has an accuracy of 87% for VGG16 model, 90% for InceptionV3 model, and 95% for EfficientNet. However, in ResNet34 better accuracy is obtained in the original image with an accuracy of 95% while in the CLAHE image the accuracy value is only 84%. The results of this comprehensive evaluation and recommendation of famous backbone networks can be useful in the computer-aided diagnosis of diabetic retinopathy.

关键词： Diabetic retinopathy Deep Learning CNN Image Enhancement CLAHE

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Imprinting Chirality on Free-Electrons by Interaction with Phonon-Polaritons Vortices

Imprinting Chirality on Free-Electrons by Interaction with P...

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CLEO: Fundamental science, CLEO:FS 2024 - Part of Conference on Lasers and Electro-Optics, CLEO 2024

作者： Yan, Qinghui Ruimy, Ron Niedermayr, Arthur Bucher, Tomer Nahari, Harel Herzig Sheinfux, Hanan Dahan, Raphael Adiv, Yuval Yannai, Michael Janzen, Eli Edgar, James H. Bartal, Guy Tsesses, Shai Koppens, Frank H.L. Maria Vanacore, Giovanni Kaminer, Ido Andrea & Erna Viterbi Department of Electrical and Computer Engineering Technion-Israel Institute of Technology Haifa3200003 Israel ICFO-Institut de Ciències Fotòniques The Barcelona Institute of Science and Technology Av. Carl Friedrich Gauss 3 Castelldefels Barcelona08860 Spain Tim Taylor Department of Chemical Engineering Kansas State University ManhattanKS66506 United States ICREA-Institució Catalana de Recerca i Estudis Avanats Passeig Lluís Companys 23 Barcelona08010 Spain Department of Materials Science University of Milano-Bicocca Milano20126 Italy

We experimentally demonstrate the generation of chiral electron beams in an ultrafast transmission electron microscope without the necessity for chiral light or chiral-shaping structures, but by breaking mirror symmet... 详细信息

ISBN: (纸本)9781957171395

关键词： Chirality

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Supersymmetric Microring Laser Arrays in Two-dimensional Space

Supersymmetric Microring Laser Arrays in Two-dimensional Spa...

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Frontiers in Optics + Laser science 2021, FiO+LS 2021 - Part of Frontiers in Optics, FiO 2021

作者： Qiao, Xingdu Midya, Bikashkali Gao, Zihe Zhang, Zhifeng Zhao, Haoqi Wu, Tianwei Yim, Jieun Agarwal, Ritesh Litchinitser, Natalia M. Feng, Liang Department of Electrical and Systems Engineering University of Pennsylvania PhiladelphiaPA19104 United States Department of Materials Science and Engineering University of Pennsylvania PhiladelphiaPA19104 United States Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States

To achieve phase-locking in coupled arrays, a two-dimensional (2D) supersymmetry (SUSY) formalism is developed and experimentally demonstrated. Our SUSY device features high power, single-mode lasing from a 2D, evanes... 详细信息

ISBN: (纸本)9781557528209

关键词： Supersymmetry

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Room Temperature Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators

Room Temperature Quantum Emitters Deterministically Integrat...

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Frontiers in Optics, FiO 2022

作者： Parto, Kamyar Azzam, Shaimaa Lewis, Nicholas Patel, Sahil Umezawa, Sammy Watanabe, Kenji Taniguchi, Takashi Moody, Galan Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States California Nanosystems Institute University of California Santa BarbaraCA93105 United States Research Center for Functional Materials National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan International Center for Materials Nanoarchitectures National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan

A novel approach to align and embed hBN single-photon emitters within background-free silicon-nitride microresonators is presented. Through the Purcell effect, emitters achieve a cavity-enhanced coupling efficiency of...

ISBN: (纸本)9781557528209

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An Interpretable Boosting-based Predictive Model for Transformation Temperatures of Shape Memory Alloys

arXiv

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arXiv 2023年

作者： Zadeh, Sina Hossein Behbahanian, Amir Broucek, John Fan, Mingzhou Tovar, Guillermo Vazquez Noroozi, Mohammad Trehern, William Qian, Xiaoning Karaman, Ibrahim Arroyave, Raymundo Department of Materials Science & Engineering Texas A&M University United States Department of Electrical & Computer Engineering Texas A&M University United States Department of Industrial & Management University of South Florida United States

In this study, we demonstrate how the incorporation of appropriate feature engineering together with the selection of a Machine Learning (ML) algorithm that best suits the available dataset, leads to the development of a predictive model for transformation temperatures that can be applied to a wide range of shape memory alloys. We develop a gradient boosting ML surrogate model capable of predicting Martensite Start, Martensite Finish, Austenite Start, and Austenite Finish transformation temperatures with an average accuracy of more than 95% by explicitly taking care of potential distribution changes when modeling different alloy systems. We included heat treatment, rolling, extrusion processing parameters, and alloy system categorical features in the model input features to achieve more accurate and realistic results. In addition, using Shapley values, which are calculated based on the average marginal contribution of features to all possible coalitions, this study was able to gain insights into the governing features and their effect on predicted transformation temperatures, providing a unique opportunity to examine the critical parameters and features in martensite transformation temperatures. © 2023, CC BY-NC-ND.

关键词： Machine learning

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Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

arXiv

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arXiv 2023年

作者： Li, Xintong Zhou, Peng Hu, Xuan Rivers, Ethan Watanabe, Kenji Taniguchi, Takashi Akinwande, Deji Friedman, Joseph S. Incorvia, Jean Anne C. Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States Department of Electrical and Computer Engineering The University of Texas at Dallas RichardsonTX75080-3021 United States Research Center for Electronic and Optical Materials National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan Research Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan

Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed off-state current. These circuits achieve the same logical output as CMOS with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 108and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. For the first time, we demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and polarity gate behavior is conducted, which has previously been lacking. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices are qualitatively analyzed. This work lays the foundation for future developments in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed and more flexible logic circuits. © 2023, CC BY.

关键词： Logic gates

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