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CLEO: science and Innovations, S and I 2022

作者： Xiao, Yuzhe Yu, Zhaoning Wambold, Raymond A. Mei, Hongyan Hickman, Garrett Goldsmith, Randall H. Saffman, Mark Kats, Mikhail A. Department of Electrical and Computer Engineering University of Wisconsin-Madison MadisonWI53706 United States Department of Physics University of Wisconsin-Madison MadisonWI53706 United States Department of Chemistry University of Wisconsin-Madison MadisonWI53706 United States Materials Science and Engineering University of Wisconsin-Madison MadisonWI53706 United States

We introduced a figure of merit for optical bottle-beam traps, and identified optical bottle-beam traps based on metasurfaces illuminated by a Gaussian beam that are superior in terms of power efficiency compared to e... 详细信息

ISBN: (纸本)9781557528209

关键词： Gaussian beams

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Layer-dependent optically induced spin polarization in InSe

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Physical Review B 2023年第11期107卷 115304-115304页

作者： Jovan Nelson Teodor K. Stanev Dmitry Lebedev Trevor LaMountain J. Tyler Gish Hongfei Zeng Hyeondeok Shin Olle Heinonen Kenji Watanabe Takashi Taniguchi Mark C. Hersam Nathaniel P. Stern Applied Physics Program Northwestern University Evanston Illinois 60208 USA Department of Physics and Astronomy Northwestern University Evanston Illinois 60208 USA Department of Material Science and Engineering Northwestern University Evanston Illinois 60208 USA Computational Science Division Argonne National Laboratory Lemont Illinois 60439 USA Material Science Division Argonne National Laboratory Lemont Illinois 60439 USA Research Center for Functional Materials National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan Department of Chemistry Northwestern University Evanston Illinois 60208 USA Department of Electrical Engineering and Computer Science Northwestern University Evanston Illinois 60208 USA

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for optoelectronics due to its high electron mobility, tunable direct band gap, and quantum transport. In addition to these confirmed properties, there are predictions of spin-dependent optical selection rules, suggesting the potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the g factor for InSe was extracted. Further investigations are done by calculating precession values using a k·p model, which is supported by ab initio density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. Optical orientation of spin is an important prerequisite for optospintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.

关键词： Magneto-optics Spin dynamics Chalcogenides Layered semiconductors Van der Waals systems Density functional theory Kerr effect Photoluminescence k dot p method

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Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs

Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/Ga...

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Device Research Conference

作者： Ding Wang Ping Wang Minming He Jiangnan Liu Shubham Mondal Mingtao Hu Danhao Wang Yuanpeng Wu Tao Ma Zetian Mi Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA Michigan Center for Materials Characterization (MC) University of Michigan Ann Arbor MI USA

Reconfigurable devices and circuits have long been sought for their flexibility, cost reduction, energy efficiency, scalability, and versatility. One good example of a reconfigurable device is a ferroelectric transistor, where the carrier concentration in the channel can be programmed due to the gradual switching properties of ferroelectrics. There have been ongoing efforts to further introduce ferroelectrics into high electron mobility transistors, which could enable enhanced-mode operation, dynamic V th tuning, and reconfigurable radio-frequency/microwave applications. 1, 2 Recent studies have demonstrated that by alloying IIIB element, e.g., Sc, with conventional III-nitride semiconductors, the polarity switching barrier of III-nitride materials could be greatly reduced, resulting in a new class of ferroelectric materials with giant polarization, including ScAlN and ScGaN. 3–5 The giant polarization provides ample design space for ferroelectric charge coupling in the channel, potentially supporting broader threshold voltage tuning window, which is tantalizing for memory and reconfigurable RF/microwave applications. 6, 7 Herein, we report the first experimental demonstration of ferroelectric switching in ultrathin (5 nm) ScAlN, as well as the realization of fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (FeHEMTs).

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Reliability of Deployed Organic Photovoltaic Modules

Reliability of Deployed Organic Photovoltaic Modules

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IEEE Conference Photovoltaic Specialists (PVSC)

作者： Hafiz K. M. Sheriff Yongxi Li Sammy Saad Stephen R. Forrest Applied Physics Program University of Michigan Ann Arbor Michigan USA Department of Electrical Engineering University of Michigan Ann Arbor Michigan USA Department of Physics University of Michigan Ann Arbor Michigan USA Department of Materials Science and Engineering University of Michigan Ann Arbor Michigan USA

ISBN: (数字)9781665464260

ISBN: (纸本)9781665475822

The commercial future of organic photovoltaics (OPVs) relies on their efficiency and reliability. Recent progress in the field has ensured the achievement of device efficiency comparable to those of commercial silicon-based photovoltaics (Si-PVs) [1]. In pursuit of reliable devices, recent works have demonstrated the intrinsic stability of both small-molecule, vacuum deposited [2] and non-fullerene acceptor (NFA) – polymer-based devices [3] under controlled laboratory conditions. The final step for outdoor deployment is therefore a demonstration of the reliability of large area OPV modules in the field, subjected to fluctuating environmental conditions such as humidity, temperature, rainfall, snow, and solar intensity. In this work, we develop a customized test facility intended for the study of the reliability of large area OPV modules deployed in outdoor environments. The facility is designed for automated in-situ measurements calibrated to 1 sun solar intensity, AM 1.5 G illumination. Initial data show the modules retain more than 95% of their initial performance for 150 h when exposed to varying solar intensities, temperature fluctuations of -2°C to 10°C, and relative humidity as high as 90%. The only significant extrinsic challenge to device stability observed was the ingress of water into the package. This is mitigated by improved packaging which utilizes polyisobutylene (PIB) encapsulation and a customized insulated glass unit (IGU).

关键词： Temperature measurement Temperature distribution Test facilities Rain Snow Humidity Solar panels Polymers Sun Thermal stability

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Demonstration of a polarization-agnostic geometric phase in nonlocal metasurfaces

Demonstration of a polarization-agnostic geometric phase in ...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Overvig, Adam C. Kasahara, Y. Alu, Andrea Photonics Initiative Advanced Science Research Center City University of New York New YorkNY10031 United States Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States Physics Program Graduate Center of the City University of New York New YorkNY10016 United States

We theoretically propose and experimentally demonstrate nonlocal metasurfaces rationally designed using symmetry-breaking principles to manipulate the optical wavefront with a geometric phase selective to custom ellip...

ISBN: (纸本)9781957171258

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Localization of Crop Damages Utilizing a Wake-Up Gas Sensor Network

Localization of Crop Damages Utilizing a Wake-Up Gas Sensor ...

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International Conference on Solid State Sensors and Actuators (TRANSDUCERS)

作者： Seungbeom Noh Sayali Tope Farhan Sadik Sium Shakir-Ul Haque Khan Mohit Karkhanis Leo Wang Adwait Deshpande Rana Dalapati Ravi V. Mural Carlos H. Mastrangelo Mingyu Ji Ling Zang James C. Schnable Hanseup Kim Electrical and Computer Engineering University of Utah Salt Lake City UT Materials Science and Engineering University of Utah Salt Lake City UT Department of Agronomy and Horticulture University of Nebraska Lincoln NE

This paper reports the initial demonstration of on-field crop damage prediction through a network of low power gas sensors that were deployed in an actual sorghum field and detected crop stress molecules, specifically hexanal. Such detection could replace current farm-scouting methods that are mostly manual and help reduce production loss of biofuel crops during a farming period. The initially-deployed gas sensor network consisted of a 2×3 array with a 7-meter interspace. When the leaves of sorghums were cut at a random location within the network, three sensors in the gas sensor network responded at 45, 62, and 72 minutes, respectively, allowing us to estimate an origination zone within an area of 21.7 m 2 out of the total monitoring farm area of 294 m 2 . This demonstration proves the potential of precise localization of plant damages through the use of the gas sensor network.

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On-Chip Unidirectional Waveguiding for Surface Acoustic Waves along a Defect Line in a Triangular Lattice

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Physical Review Applied 2023年第2期19卷 024053-024053页

作者： Yun Zhou Naiqing Zhang Dia’aaldin J. Bisharat Robert J. Davis Zichen Zhang James Friend Prabhakar R. Bandaru Daniel F. Sievenpiper Department of Mechanical Engineering University of California San Diego La Jolla 92093-0411 California USA Department of Electrical Engineering University of California San Diego La Jolla 92093-0411 California USA Program in Materials Science University of California San Diego La Jolla 92093-0411 California USA

The latest advances in topological physics have yielded a toolset for highly robust wave-propagation modalities for overcoming obstacles involving beam steering and lateral diffraction in surface acoustic waves (SAWs). However, extant proposals are limited to the exploitation of spin- or valley-polarized phases and rely on nonzero Berry curvature effects. Here, we propose and experimentally demonstrate a highly robust guiding principle, which instead employs an intrinsic chirality of phase vortices and maintains a zero Berry curvature for SAWs. Based on a line defect within a true triangular phononic lattice, the guided SAW mode spans a wide bandwidth [(Δω/ωcenter) ∼ 10%] and is well confined in the lateral direction with 3-dB attenuation within half of a unit cell. SAW routing around sharp bends with negligible backscatter is demonstrated. The on-chip integrated design permits unidirectional SAW modes that can enable considerable miniaturization of SAW-based devices, with applications ranging from radio-frequency devices to quantum information transduction.

关键词： Line defects Ultrasonics Acoustic metamaterials Phononic crystals Topological insulators Triangular lattice Waveguides Surface acoustic wave

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Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Cha...

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Annual International Symposium on Reliability Physics

作者： Priyankka Gundlapudi Ravikumar Prasanna Venkatesan Ravindran Khandker Akif Aabrar Taeyoung Song Sharadindu Gopal Kirtania Dipjyoti Das Chinsung Park Nashrah Afroze Mengkun Tian Shimeng Yu Ahmad Ehtesham Islam Suman Datta Souvik Mahapatra Asif Khan School of Electrical and Computer Engineering Georgia Institute of Technology GA USA Institute of Materials GA USA Sensors directorate Air Force Research Laboratory (AFRL) OH USA School of Material Science and Engineering Georgia Institute of Technology GA USA Department of Electrical Engineering Indian Institute of Technology Mumbai India

ISBN: (数字)9798350369762

ISBN: (纸本)9798350369779

In this work, we report the first comprehensive time-dependent dielectric breakdown (TDDB) study on ultra-thin HfO 2 -based ferroelectric under bipolar stress conditions. Here, field cycling is done on 7 nm Hf 0.5 Zr 0.5 O 2 (HZO) capacitors at different temperatures and bipolar stress fields. Despite involving polarization switching and associated large internal electric fields, bipolar cycling of ferroelectric HZO is shown to exhibit similar time-dependent dielectric breakdown acceleration trends to that of traditional dielectrics like SiO 2 . Notably, the temperature acceleration of time-dependent dielectric breakdown shows a linear dependence on the stress field similar to SiO 2 . Further, the field acceleration of time-dependent dielectric breakdown in ferroelectric HZO, while exhibiting functionally similar temperature dependence to that of SiO 2 , demonstrates considerably greater sensitivity to temperature.

关键词： Silicon compounds Temperature sensors Temperature dependence Polarization Temperature Capacitors Switches

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Active Beam Steering of Terahertz Waves with Phase Change-based Metasurfaces

Active Beam Steering of Terahertz Waves with Phase Change-ba...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Riad Yahiaoui Zizwe A. Chase Zhixiang Huang Xi Wang Thomas A. Searles Department of Electrical & Computer Engineering University of Illinois at Chicago Chicago IL USA Department of Materials Science and Engineering University of Delaware Newark DE USA

We demonstrate active control of THz beams with a phase change material, VO 2 , patterned into a metasurface microcavity. We experimentally confirm simulations showing up to 35 degree deflection at 300 GHz.

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

关键词： Phase change materials Beam steering Electro-optic deflectors Lasers and electrooptics Metasurfaces Microcavities Laser beams

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STREAM: Software Tool for Routing Efficiently Advanced Macrofluidics

arXiv

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arXiv 2023年

作者： Wang, Lehong Kendre, Savita V. Liu, Haotian Nemitz, Markus P. Robotic Materials Group Department of Robotics Engineering Worcester Polytechnic Institute MA01609 United States Department of Computer Science Worcester Polytechnic Institute MA01609 United States Department of Electrical and Computer Engineering Worcester Polytechnic Institute MA01609 United States

The current fabrication and assembly of fluidic circuits for soft robots relies heavily on manual processes;as the complexity of fluidic circuits increases, manual assembly becomes increasingly arduous, error-prone, and time-consuming. We introduce a software tool that generates printable fluidic networks automatically. We provide a library of fluidic logic elements that are easily 3D printed from thermoplastic polyurethanes using Fused Deposition Modeling only. Our software tool and component library allow the development of arbitrary soft digital circuits. We demonstrate a variable frequency ring oscillator and a full adder. The simplicity of our approach using FDM printers only, democratizes fluidic circuit implementation beyond specialized laboratories. Our software is available on GitHub (https://***/roboticmaterialsgroup/FluidLogic) Copyright © 2023, The Authors. All rights reserved.

关键词： computer software

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