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2022 Device Research Conference, DRC 2022

作者： Joishi, Chandan Kalarickal, Nidhin Kurian Rahman, Wahidur Lu, Wu Rajan, Siddharth The Ohio State University Department of Electrical and Computer Engineering United States The Ohio State University Department of Materials Science and Engineering United States

ISBN: (数字)9781665498838

ISBN: (纸本)9781665498838

This presentation will give an overview of the current status and future opportunities for high-frequency ultrawide bandgap (UWBG) semiconductor transistors. GaN-based transistors have demonstrated excellent performance for RF applications, but are close to the limits set by their electronic properties in the mm-wave regime. UWBG semiconductors such as high Al-content AlGaN can provide significantly higher breakdown electric field while having electron saturated velocity similar to GaN, and can in principle provide significant improvements in power-gain product at mm-wave frequencies. However, key challenges in real devices such as high contact resistance, premature breakdown of metal-semiconductor and dielectric interfaces, and thermal management must be addressed before such improved performance is realized. © 2022 IEEE.

关键词： Aluminum gallium nitride

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Broadband and Tailorable THz Emission from Spintronic Photonic Crystals

Broadband and Tailorable THz Emission from Spintronic Photon...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Ghaffari, Abbas Thapa, Puja Collazo, Ramón Gundogdu, Kenan Sun, Dali Gu, Qing Department of Electrical and Computer Engineering North Carolina State University Raleigh27695 United States Department of Physics North Carolina State University Raleigh27695 United States Department of Materials Science and Engineering North Carolina State University Raleigh27606 United States

We explore THz generation from structured ferromagnet/ultrawide bandgap semiconductor heterostructures. The emission spectrum can span the entire THz gap, be enhanced, and tuned by changing size and periodicity of the... 详细信息

ISBN: (纸本)9781957171395

关键词： Spintronics

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Deep Style Transfer for Generation of Photo-realistic Synthetic Images of CNT Forests

Deep Style Transfer for Generation of Photo-realistic Synthe...

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2023 IEEE Applied Imagery Pattern Recognition Workshop, AIPR 2023

作者： Kotha, Prashanth Reddy Attari, Minasadat Maschmann, Matthew Bunyak, Filiz University of Missouri Department of Electrical Engineering and Computer Science ColumbiaMO United States University of Missouri Department of Mechanical and Aerospace Engineering ColumbiaMO United States University of Missouri MU Materials Science and Engineering Institute ColumbiaMO United States

ISBN: (纸本)9798350359527

Carbon nanotubes (CNTs) are promising nano-materials with diverse applications in various fields, ranging from electronics and energy storage to biomedical applications. Characterization of CNT forest structures and prediction of material properties through image analytics are critical for new material design and discovery. Artificial intelligence and machine learning (AI/ML) driven approaches offer promising solutions towards these goals. These data-driven approaches rely on large amounts of annotated data for robust training. However, growing, imaging, and annotation of CNT forests are complex, time consuming, expensive processes limiting availability of such data. In this paper, we propose a novel neural style transfer pipeline to generate photo-realistic and structure-Aware synthetic images of CNT forests by imposing scanning electron microscopy (SEM) like appearance to physics-based simulation results. The proposed pipeline relies on a novel wavelet-based style transfer network and a selective decision fusion mechanism that allows better preservation of the thin curvilinear structures of CNTs, particularly their intricate details and connectivity, without introducing unwanted artifacts. Experimental results and quantitative analysis demonstrate refined style transfer that generates photo-realistic images that can be used to train AI/ML-driven CNT forest image analysis systems. © 2023 IEEE.

关键词： Carbon nanotubes

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Creating semi-Quanta multi-layer synthetic CNT images using CycleGAN

Creating semi-Quanta multi-layer synthetic CNT images using ...

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2023 IEEE Applied Imagery Pattern Recognition Workshop, AIPR 2023

作者： Safavigerdini, Kaveh Surya, Ramakrishna Reinhard, Andrew Quinlan, Zach Bunyak, Filiz Maschmann, Matthew R. Palaniappan, Kannappan University of Missouri Department of Electrical Engineering and Computer Science ColumbiaMo United States University of Missouri Department of Mechanical and Aerospace Engineering ColumbiaMo United States University of Missouri MU Materials Science and Engineering Institute ColumbiaMo United States

ISBN: (纸本)9798350359527

We address the challenge of creating semi-Quanta images of vertically-oriented carbon nanotubes (CNT). Our previous method, CNTNeXt, successfully predicted the mechanical properties for semi-Scanning Electron Microscopy (SEM) images of CNT forests. However, for Quanta images, a more sophisticated approach is required. We propose a novel pipeline that modifies multi-layer synthetic (MLS) CNT images, which are synthetic representations of CNT structures, to resemble Quanta images. This is achieved using CycleGAN, a deep learning model designed for image-To-image translation tasks, which can learn mappings between two different domains without paired training data. By training the CycleGAN on both Quanta and MLS images, we are able to transfer the texture of Quanta images to the MLS images. The resulting 'semi-Quanta' images are ready to train CNTNeXt, which effectively predicts the mechanical properties, including buckling load and stiffness of synthetic MLS images. Our method represents an advancement towards our ultimate goal of creating an automated CNT growth process, and opens up possibilities for further improvements and applications. © 2023 IEEE.

关键词： Carbon nanotubes

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engineering dimensionality of collective dipole-dipole interactions using a nanophotonic environment

Engineering dimensionality of collective dipole-dipole inter...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Boddeti, Ashwin K. Wang, Yi Juarez, Xitlali Boltasseva, Alexandra Alaeian, Hadiseh Odom, Teri W. Jacob, Zubin Elmore Family School of Electrical and Computer Engineering Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Graduate Program in Applied Physics Northwestern University EvanstonIL60208 United States Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States

ISBN: (纸本)9781957171258

We experimentally demonstrate reduced dimensionality in a interacting ensemble of emitters. The well-known stretched exponential decay dynamics, (Equation presented) with β = 0.5 in 3D geometries, is strikingly modified in a nanophotonic environment that supports long-range interaction to β ~ 0.3. © Optica Publishing Group 2023.

关键词： Nanophotonics

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Enhanced ferromagnetism in an artificially stretched lattice in quasi-two-dimensional Cr2Ge2Te6

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Physical Review B 2025年第2期111卷 L020402-L020402页

作者： Hiroshi Idzuchi Andres E. Llacsahuanga Allcca Anh Khoa Augustin Lu Mitsuhiro Saito Subhadip Das John F. Ribeiro Michel Houssa Ruishen Meng Kazutoshi Inoue WPI Advanced Institute for Materials Research (AIMR) Tohoku University Sendai 980-8577 Japan Center for Science and Innovation in Spintronics (CSIS) Tohoku University Sendai 980-8577 Japan Department of Physics and Astronomy Purdue University West Lafayette Indiana 47907 USA Department of Physics The University of Tokyo Bunkyo-ku Tokyo 113-0033 Japan Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute Purdue University West Lafayette Indiana 47907 USA Mathematics for Advanced Materials Open Innovation Laboratory National Institute of Advanced Industrial Science and Technology Sendai 980-8577 Japan Research Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba 305-0044 Japan Institute of Engineering Innovation The University of Tokyo Tokyo 113-8656 Japan Institute of Physics and Astronomy and Villum Centers for Dirac Materials and for Hybrid Quantum Materials and Devices Aarhus University 8000 Aarhus-C Denmark School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA Department of Physics and Astronomy Katholieke Universiteit Leuven 3001 Leuven Belgium

Crystal lattice is key in understanding magnetic interactions between atoms in solids. As the effective control of the lattice via tensile stress is limited, there are only a few demonstrations of controlling magnetic properties by expanding the lattice. This study reveals a clear correlation between enhanced magnetism, where Curie temperature (TC) is doubled from ∼60 to ∼120 K, and lattice expansion in prototypical van der Waals magnet Cr2Ge2Te6 with sputtered dielectric overlayers NiO and MgO. We ascribe the mechanism of this TC increase to a change in exchange interactions induced by strain, studied by several experimental probes and computational approaches.

关键词： Van der Waals forces

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Thermal Hall effect in insulating quantum materials

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The Innovation 2022年第5期3卷 3-4页

作者： Shucheng Guo Youming Xu Ran Cheng Jianshi Zhou Xi Chen Department of Electrical and Computer Engineering University of CaliforniaRiversideRiversideCA 92521USA Department of Physics and Astronomy University of CaliforniaRiversideRiversideCA 92521USA Materials Science and Engineering Program Department of Mechanical EngineeringUniversity of Texas at AustinAustinTX 78712USA

The emerging field of quantum materials involves an exciting new class of materials in which charge,spin,orbital,and lattice degrees of freedom are intertwined,exhibiting a plethora of exotic physical *** materials include,but are not limited to,superconductors,topological quantum matter,and systems with frustrated spins,which enable a wide range of potential applications in biomedicine,energy transport and conversion,quantum sensing,and quantum information processing。

关键词： properties. quantum topological

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Subwavelength Fano Resonant Porous Silicon Metasurfaces for Sensing and Dynamic Structural Color

Subwavelength Fano Resonant Porous Silicon Metasurfaces for ...

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CLEO: science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

作者： Gafsi, Saddam Dos Santos, Estevao Marques Kravchenko, Ivan Ryckman, Judson D. Holcombe Department of Electrical and Computer Engineering Clemson University ClemsonSC29634 United States Center for Nanophase Materials Science Oak Ridge National Laboratory Oak RidgeTN37831 United States

We introduce the design, fabrication, and experimental investigation of subwavelength Fano resonant porous silicon metasurfaces functioning on the principle of guided mode resonance. These metasurfaces exhibit promise for dynamic structural coloration and sensing applications. © Optica Publishing Group 2024

关键词： Porous materials

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Subwavelength Fano Resonant Porous Silicon Metasurfaces for Sensing and Dynamic Structural Color

Subwavelength Fano Resonant Porous Silicon Metasurfaces for ...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

ISBN: (纸本)9781957171395

关键词： Mesoporous materials

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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