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2022 Portland International Conference on Management of engineering and Technology, PICMET 2022

作者： Khongamnuaisak, Lertchai Pentrakoon, Duanghathai Sinthupinyo, Sukree Suanpong, Kwanrat Chulalongkorn University Technopreneurship and Innovation Management Program Graduate School Bangkok Thailand Chulalongkorn University Faculty of Science Department of Materials Science Bangkok Thailand Faculty of Engineering Chulalongkorn University Department of Computer Engineering Bangkok Thailand Chulalongkorn Business School Commerce Department Bangkok Thailand

ISBN: (数字)9781890843410

ISBN: (纸本)9781890843410

Patent has been an increasingly important role in the world because it is not only significant to protect the invention of the company's business but also to generate revenue from the commercialization. WIPO (2018) reports that the repository has many patents so, to assess patent, it consumes time and requires various expertise. Generally, several models have been developed to address this matter, which to assess using a questionnaire tool for portfolios by human. Perhaps, there is not precise because it is assessed base on personal bias or previous experience of expertise. So that, occurs bias any limitation exists that our research will address by artificial intelligence. Thus, this research applies a Natural Language programming to assess for commercial of the patent. Then, the obtained data is used to assigned factors and calculate the model for assessing the commercialization of patent. This finding should deliver an alternative effective patent assessment, which is tool addresses, some current deficiency patent assessment for commercialization. © 2022 PICMET.

关键词： Patents and inventions

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Promoting spintronic terahertz radiation via Tamm plasmon coupling

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Photonics Research 2023年第6期11卷 1057-1066页

作者： YUNQING JIANG HONGQING LI XIAOQIANG ZHANG FAN ZHANG YONG XU YONGGUANG XIAO FENGGUANG LIU ANTING WANG QIWEN ZHAN WEISHENG ZHAO School of Integrated Circuit Science and Engineering Hefei Innovation Research InsitituteBeihang UniversityBeijing 100191China Anhui High Reliability Chips Engineering Laboratory Hefei 230013China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China Department of Optics and Optical Engineering University of Science and Technology of ChinaHefei 230026China School of Optical-Electrical and Computer Engineering University of Shanghai for Science and TechnologyShanghai 200093China

Spectral fingerprint and terahertz(THz)field-induced carrier dynamics demands the exploration of broadband and intense THz signal *** THz emitters(STEs),with high stability,a low cost,and an ultrabroad bandwidth,have been a hot topic in the field of THz *** of the main barriers to their practical application is lack of an STE with strong radiation ***,through the combination of optical physics and ultrafast photonics,the Tamm plasmon coupling(TPC)facilitating THz radiation is realized between spin THz thin films and photonic crystal *** results show that the spectral absorptance can be increased from 36.8%to 94.3%for spin THz thin films with *** coupling with narrowband resonance not only improves the optical-to-spin conversion efficiency,but also guarantees THz transmission with a negligible loss(~4%)for the photonic crystal *** to the simulation,we prepared this structure successfully and experimentally realized a 264%THz radiation ***,the spin THz thin films with TPC exhibited invariant absorptivity under different polarization modes of the pump beam and weakening confinement on an obliquely incident pump *** approach is easy to implement and offers possibilities to overcome compatibility issues between the optical structure design and low energy consumption for ultrafast THz optospintronics and other similar devices.

关键词： pump polarization coupling

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Unraveling the transformation pathway of the β to γ phase transition in Ga2O3 from atomistic simulations

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Physical Review materials 2025年第1期9卷 014601-014601页

作者： Channyung Lee Michael A. Scarpulla Joel B. Varley Elif Ertekin Department of Mechanical Science and Engineering University of Illinois at Urbana-Champaign Urbana Illinois 61801 USA Department of Materials Science and Engineering University of Utah Salt Lake City Utah 84112 USA Department of Electrical and Computer Engineering University of Utah Salt Lake City Utah 84112 USA Lawrence Livermore National Laboratory Livermore California 94550 USA Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana Illinois 61801 USA

Defect spinel γ−Ga2O3 is the least stable polymorph of Ga2O3, so its frequent appearance as a structural defect within or on the surface of monoclinic β−Ga2O3 remains a mystery. Through first-principles calculations, we explore potential pathways for the phase transition from β−Ga2O3 to γ−Ga2O3, and examine two key driving forces: tensile strain and Ga deficiency. When configurational entropy contributions to phase energies are included, the γ phase becomes energetically competitive with the β phase, with the free energy difference between these phases diminishing even further under Ga-deficient conditions. Notably, a stability crossover occurs at room temperature at high vacancy concentrations ([VGa3−]>3%). A simple model β→γ transformation pathway is identified, comprising two primary reactions, that enables the formation of the γ phase via simultaneous migration of Ga atoms from tetrahedral lattice sites to octahedral interstitial positions. The transformation barriers are prohibitively large in pristine Ga2O3, but can be substantially reduced by: (1) the presence of Ga vacancies, (2) elongational strains along the crystallographic a-axis, and (3) when volumetric relaxations are possible during transformation. These results elucidate prior experimental observations, where γ−Ga2O3 is seen on damaged surfaces or in highly n-type β−Ga2O3 environments, which support Ga deficiency and mechanical strain. The insights into the driving forces and mechanisms of γ−Ga2O3 formation enhance understanding of how localized strain and nonequilibrium defect concentrations may facilitate its formation from the β phase.

关键词： Free energy

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PBF-AMP-Onto: an ontology for powder bed fusion additive manufacturing processes 1

PBF-AMP-Onto: an ontology for powder bed fusion additive man...

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1st International Workshop on Semantic materials science: Harnessing the Power of Semantic Web Technologies in materials science, SeMatS 2024

作者： Pour, Mina Abd Nikooie Tarafder, Prithwish Wiberg, Anton Li, Huanyu Moverare, Johan Lambrix, Patrick Department of Computer and Information Science Linköping University Linköping Sweden Swedish e-Science Research Centre Linköping University Linköping Sweden Department of Management and Engineering Linköping University Linköping Sweden Wallenberg Initiative Materials Science for Sustainability Linköping University Linköping Sweden Wallenberg AI Autonomous Systems and Software Program Linköping University Linköping Sweden

Additive manufacturing is an innovative production approach aimed at creating products that traditional techniques cannot produce with the desired quality and requirements. Throughout the additive manufacturing process, data is either used (such as materials properties, printer characteristics and settings) or generated (such as monitoring data during printing, slicing strategies setting parameters). However, managing such data with complex relationships remains a significant challenge in both research and industry in the additive manufacturing field. To address this issue, we developed a modular ontology that can be used as the basis for a framework that supports decision-making systems, facilitate semanticsaware data management, and enhance the understanding and optimization of additive manufacturing processes. In this paper we focus on one of the state-of-the-art additive manufacturing approaches, i.e., powder bed fusion. To show the use and the feasibility of our approach, we created a knowledge graph for an actual additive manufacturing experiment based on our ontology, and show how queries relevant to domain experts can be answered using this knowledge graph. © 2024 CEUR-WS. All rights reserved.

关键词： Ontology

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Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps

Understanding Correlation Between Memory Window Closure, Lea...

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Annual International Symposium on Reliability Physics

作者： Priyankka Ravikumar Andrea Padovani Prasanna Venkatesan Chinsung Park Nashrah Afroze Mengkun Tian Suman Datta Shimeng Yu Luca Larcher Gaurav Thareja Asif Khan School of Electrical and Computer Engineering Georgia Institute of Technology GA USA Engineering Department “Enzo Ferrari” UNIMORE Italy Institute of Materials GA USA School of Material Science and Engineering Georgia Institute of Technology GA USA Applied Materials

ISBN: (数字)9798331504779

ISBN: (纸本)9798331504786

Memory window (MW) closure, read delay, and gate leakage are three key reliability challenges in ferroelectric (FE) field-effect transistors (FEFETs), all of which have traditionally been analyzed separately. In this work, we exploit dedicated experiments and device simulations to present a detailed study of these three mechanisms in Si-FEFETs with a 10nm layer of FE HZO. The results reveal critical insights into the interplay between trap generation and polarization switching (PS), and the correlation between MW closure, read delay, and leakage current. First, we show that trap generation is accelerated by PS and initially (up to $5\times 10^{4}$ cycles) occurs mainly in the interfacial layer (IL). These PS induced traps are slow traps and are found to be responsible for both reduction in MW recovery with read delay and MW closure, demonstrating a strong correlation between the two mechanisms. Finally, we show that leakage current increase is controlled by the generation of HZO traps, which is triggered by internal field redistribution once IL is highly degraded (after MW closure). The engineering of FEFETs to minimize the formation of slow (de)trapping defects in the IL is essential to improve overall reliability of the FEFET device.

关键词： Degradation Electron traps Correlation Switches Reliability engineering Iron Delays Gate leakage FeFETs Stress

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Absence of Weyl nodes in EuCd2As2 revealed by the carrier density dependence of the anomalous Hall effect

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Physical Review B 2024年第12期109卷 125202-125202页

作者： Yue Shi Zhaoyu Liu Logan A. Burnett Seokhyeong Lee Chaowei Hu Qianni Jiang Jiaqi Cai Xiaodong Xu Mo Li Cheng-Chien Chen Jiun-Haw Chu Department of Physics University of Washington Seattle Washington 98195 USA Department of Materials Science and Engineering University of Washington Seattle Washington 98195 USA Department of Physics University of Alabama at Birmingham Birmingham Alabama 35294 USA Department of Electrical and Computer Engineering University of Washington Seattle Washington 98195 USA

The antiferromagnetic layered compound EuCd2As2 is widely considered a leading candidate of ideal Weyl semimetals, featuring a single pair of Weyl nodes in its field-induced ferromagnetic state. Nevertheless, this view was recently challenged by an optical spectroscopy study, which suggested that it is a magnetic semiconductor. In this study, we successfully synthesized highly insulating EuCd2As2 crystals with carrier density reaching as low as 2×1015cm−3. The magnetotransport measurements revealed a progressive decrease of the anomalous Hall conductivity (AHC) by several orders of magnitude as the carrier density decreases. This behavior contradicts what is expected from the intrinsic AHC generated by the Weyl points, which is independent of carrier density as the Fermi level approaches the charge neutrality point. In contrast, the scaling relationship between AHC and longitudinal conductivity aligns with the characteristics of variable-range hopping insulators. Our results suggest that EuCd2As2 is a magnetic semiconductor rather than a topological Weyl semimetal.

关键词： Anomalous Hall effect Magnetotransport Topological materials Pnictides Weyl semimetal Magnetization measurements Resistivity measurements Susceptibility measurements

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Mixed Delay/Nondelay Embeddings Based Neuromorphic Computing with Patterned Nanomagnet Arrays 9

Mixed Delay/Nondelay Embeddings Based Neuromorphic Computing...

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9th Annual IEEE International Conference on Rebooting Computing, ICRC 2024

作者： Ti, Changpeng Hassan, Usman Vatsavai, Sairam Sri McCarter, Margaret Vasdev, Aastha An, Jincheng Achinuq, Barat Welp, Ulrich Cheung, Sen-Ching Thakkar, Ishan G. Todd Hastings, J. Department of Electrical and Computer Engineering University of Kentucky LexingtonKY40506 United States Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Materials Science Division Argonne National Laboratory LemontIL60439 United States Department of Physics University of Kentucky LexingtonKY40506 United States

ISBN: (纸本)9798331541279

Patterned nanomagnet arrays (PNAs) have been shown to exhibit a strong geometrically frustrated dipole interaction. Some PNAs have also shown emergent domain wall dynamics. Previous works have demonstrated methods to physically probe these magnetization dynamics of PNAs to realize neuromorphic reservoir systems that exhibit chaotic dynamical behavior and high-dimensional nonlinearity. These PNA reservoir systems from prior works leverage echo state properties and linear/nonlinear short-term memory of component reservoir nodes to map and preserve the dynamical information of the input time-series data into nondelay spatial embeddings. Such mappings enable these PNA reservoir systems to imitate and predict/forecast the input time series data. However, these prior PNA reservoir systems are based solely on the nondelay spatial embeddings obtained at component reservoir nodes. As a result, they require a massive number of component reservoir nodes, or a very large spatial embedding (i.e., high-dimensional spatial embedding) per reservoir node, or both, to achieve acceptable imitation and prediction accuracy. These requirements reduce the practical feasibility of such PNA reservoir systems. To address this shortcoming, we present a mixed delay/nondelay embeddings-based PNA reservoir system. Our system uses a single PNA reservoir node with the ability to obtain a mixture of delay/nondelay embeddings of the dynamical information of the time-series data applied at the input of a single PNA reservoir node. Our analysis shows that when these mixed delay/nondelay embeddings are used to train a perceptron at the output layer, our reservoir system outperforms existing PNA-based reservoir systems for the imitation of NARMA 2, NARMA 5, NARMA 7, and NARMA 10 time series data, and for the short-term and long-term prediction of the Mackey Glass time series data. © 2024 IEEE.

关键词： Time series

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N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs

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Photonics Research 2022年第2期10卷 587-593页

作者： Xianhe Liu Yi Sun Yakshita Malhotra Ayush Pandey Ping Wang Yuanpeng Wu Kai Sun Zetian Mi Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMichigan 48109USA Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China Department of Materials Science and Engineering University of MichiganAnn ArborMichigan 48109USA

The efficiency of conventional quantum well light-emitting diodes(LEDs) decreases drastically with reducing areal size. Here we show that such a critical size scaling issue of LEDs can be addressed by utilizing N-polar In Ga N nanowires. We studied the epitaxy and performance characteristics of N-polar In Ga N nanowire LEDs grown on sapphire substrate by plasma-assisted molecular beam epitaxy. A maximum external quantum efficiency-11% was measured for LEDs with lateral dimensions as small as 750 nm directly on wafer without any packaging. The effect of electron overflow and Auger recombination on the device performance is also studied. This work provides a viable approach for achieving high-efficiency nano and micro LEDs that were not previously possible.

关键词： sapphire nanowires polar

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Advances in solar energy harvesting integrated by van der Waals graphene heterojunctions

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RSC Advances 2023年第44期13卷 31273-31291页

作者： Le, Top Khac Mai, The-Hung Iqbal, Muhammad Aamir Vernardou, Dimitra Dao, Van-Duong Ponnusamy, Vinoth Kumar Rout, Chandra Sekhar Pham, Phuong V. Faculty of Materials Science and Technology University of Science Ho Chi Minh City700000 Viet Nam Vietnam National University Ho Chi Minh City700000 Viet Nam Department of Physics National Sun Yat-sen University Kaohsiung80424 Taiwan School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Department of Electrical and Computer Engineering School of Engineering Hellenic Mediterranean University Heraklion71410 Greece Faculty of Biotechnology Chemistry and Environmental Engineering Phenikaa University Hanoi100000 Viet Nam Department of Medicinal and Applied Chemistry and Research Center for Precision Environmental Medicine Kaohsiung Medical University Kaohsiung807 Taiwan Department of Medical Research Kaohsiung Medical University Hospital Kaohsiung807 Taiwan Department of Chemistry National Sun Yat-sen University Kaohsiung80424 Taiwan Centre for Nano and Material Sciences Jain University Bangalore562112 India

Graphene has garnered increasing attention for solar energy harvesting owing to its unique features. However, limitations hinder its widespread adoption in solar energy harvesting, comprising the band gapless in the molecular orbital of graphene lattice, its vulnerability to oxidation in oxidative environments, and specific toxic properties that require careful consideration during development. Beyond current challenges, researchers have explored doping graphene with ionic liquids to raise the lifespan of solar cells (SCs). Additionally, they have paid attention to optimizing graphene/Si Schottky junction or Schottky barrier SCs by enhancing the conductivity and work function of graphene, improving silicon's reflectivity, and addressing passivation issues at the surface/interface of graphene/Si, resulting in significant advancements in their power conversion efficiency. Increasing the functional area of graphene-based SCs and designing efficient grid electrodes are also crucial for enhancing carrier collection efficiency. Flaws and contaminants present at the interface between graphene and silicon pose significant challenges. Despite the progress of graphene/Si-based photovoltaic cells still needs to catch up to the efficiency achieved by commercially available Si p-n junction SCs. The low Schottky barrier height, design-related challenges associated with transfer techniques, and high lateral resistivity of graphene contribute to this performance gap. To maximize the effectiveness and robustness of graphene/Si-based photovoltaic cells, appropriate interlayers have been utilized to tune the interface and modulate graphene's functionality. This mini-review will address ongoing research and development endeavors using van der Waals graphene heterojunctions, aiming to overcome the existing limitations and unlock graphene's full potential in solar energy harvesting and smart storage systems. © 2023 The Royal Society of Chemistry.

关键词： Graphene

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Cost-Efficient Snubbers for Boost Converters

Cost-Efficient Snubbers for Boost Converters

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Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)

作者： Yeu-Torng Yau Thanh-Phu. Luu Department of Ph.D. Program Prospective Technology of Electrical Engineering and Computer Science National Chin-Yi University of Technology Taichung Taiwan Department of Electrical Engineering National Chin-Yi University of Technology Taichung Taiwan

ISBN: (数字)9784885523472

ISBN: (纸本)9798350349498

Conventional boost converters operating with hard-switching result in low conversion efficiency and increased electromagnetic interference emissions. In this paper, a cost-efficient passive snubber is proposed with a few additional components: two diodes, one capacitor, and one inductor. Moreover, because these snubber components are not located on the main power processing path, they only require low ratings, resulting in improved cost-effectiveness.

关键词： Snubbers Electromagnetic interference Capacitors Switches Electromagnetic compatibility Inductors

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